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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Interconnect and Packaging Technologies for Terahertz Communication Systems

Using newly developed silicon micromachining technology that enables low-loss and highly integrated packaging solutions, we are developing vertically stacked transmitters and receivers at terahertz frequencies that can be used for communication and other terahertz systems. Although there are multiple ways to address the problem of interconnect and packaging solutions at these frequencies, such as system-on-package (SOP), multi-chip modules (MCM), substrate integrated waveguide (SIW), liquid crystal polymer (LCP) based multilayer technologies, and others, we show that deep reactive ion etching (DRIE) based silicon micromachining with vertical integration allows the most effective solutions at terahertz frequencies.

Micromachining↗
NASA NTRS2002

Packaging Technology for SiC High Temperature Circuits Operable up to 500 Degrees Centigrade

New high temperature low power 8-pin packages have been fabricated using commercial fabrication service. These packages are made of aluminum nitride and 96 percent alumina with Au metallization. The new design of these packages provides the chips inside with EM shielding. Wirebond geometry control has been achieved for precise mechanical tests. Au wirebond samples with 45 degree heel-angle have been tested using wireloop test module. The geometry control improves the consistency of measurement of the wireloop breaking point.Also reported on is a parametric study of the thermomechanical reliability of a Au thick-film based SiC die-attach assembly using nonlinear finite element analysis (FEA) was conducted to optimize the die-attach thermo-mechanical performance for operation at temperatures from room temperature to 500 degrees Centigrade. This parametric study centered on material selection, structure design and process control.

Chen, Lian-Yu↗
NASA NTRS2010

The Assurance Challenges of Advanced Packaging Technologies for Electronics

Advances in microelectronic parts performance are driving towards finer feature sizes, three-dimensional geometries and ever-increasing number of transistor equivalents that are resulting in increased die sizes and interconnection (I/O) counts. The resultant packaging necessary to provide assemble-ability, environmental protection, testability and interconnection to the circuit board for the active die creates major challenges, particularly for space applications, Traditionally, NASA has used hermetically packaged microcircuits whenever available but the new demands make hermetic packaging less and less practical at the same time as more and more expensive, Some part types of great interest to NASA designers are currently only available in non-hermetic packaging. It is a far more complex quality and reliability assurance challenge to gain confidence in the long-term survivability and effectiveness of nonhermetic packages than for hermetic ones. Although they may provide more rugged environmental protection than the familiar Plastic Encapsulated Microcircuits (PEMs), the non-hermetic Ceramic Column Grid Array (CCGA) packages that are the focus of this presentation present a unique combination of challenges to assessing their suitability for spaceflight use. The presentation will discuss the bases for these challenges, some examples of the techniques proposed to mitigate them and a proposed approach to a US MIL specification Class for non-hermetic microcircuits suitable for space application, Class Y, to be incorporated into M. IL-PRF-38535. It has recently emerged that some major packaging suppliers are offering hermetic area array packages that may offer alternatives to the nonhermetic CCGA styles but have also got their own inspectability and testability issues which will be briefly discussed in the presentation,

Sampson, Michael J.↗
NASA NTRS2017

Packaging Technology for SiC High Temperature Electronics

High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

Chen, Liang-Yu↗
NASA NTRS2017

Packaging Technology for Dielectric-Coating-Less Heavy Ion Radiation Testing of High-Voltage (HV) Electronic Parts

Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.

High Voltage↗
NASA NTRS2003

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.

Beheim, Glenn M.↗
NASA NTRS1990

ACTS Multibeam Communications Package - Technology for the 1990S

To maintain its competitive position in the 1990s, satellite communications must evolve to provide new services and to reduce the costs of supplying existing services. NASA's Advanced Communications Technology Satellite (ACTS) program is directed toward developing the technology base that will support this evolution. The ACTS communications payload is optimized for digital communications using a time-division multiple access format. Scanning spot-beam antennas provide high-performance on-demand service to the earth communication stations. On-board processing and switching allow full connectivity in a single-hop network architecture. ACTS employs Ka-band (30/20 GHz) links for communications traffic and includes techniques for mitigating rain fades. Scheduled to be launched by a Space Shuttle in 1992, ACTS will provide in-orbit technology verification and support experimental communications networks for up to four years.

Graebner, John C.↗