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Traditional submillimeter-wave vacuum tube sources, now available only from the former Soviet Union, have been a mainstay for generating modest amounts (mW) of narrow band (phase lockable) tunable CW RF power at frequencies from 50 to 1200 GHz.
The term "terahertz" has been ubiquitous in the arena of technology over the past couple of years. New applications are emerging every day which are exploiting the promises of terahertz - its small wavelength; capability of penetrating dust, clouds, and fog; and possibility of having large instantaneous bandwidth for high-speed communication channels. Until very recently, space-based instruments for astrophysics, planetary science, and Earth science missions have been the primary motivator for the development of terahertz sensors, sources, and systems. However, in recent years the emerging areas such as imaging from space platforms, surveillance of person-borne hidden weapons or contraband from a safe stand-off distance and reconnaissance, medical imaging and DNA sequencing, and in the world high speed communications have been the driving force for this area of research.
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The objective of this project was to develop a purely solid-state based, thus miniaturized, far-infrared (FIR) (also known as terahertz (THz)) wave source using III-V semiconductor nanostructures for biomolecular detection and sensing. Many biomolecules, such as DNA and proteins, have distinct spectroscopic features in the FIR wavelength range as a result of vibration-rotation-tunneling motions and various inter- and intra-molecule collective motions. Spectroscopic characterization of such molecules requires narrow linewidth, sufficiently high power, tunable (in wavelength), and coherent FIR sources. Unfortunately, the FIR frequency is one of the least technologically developed ranges in the electromagnetic spectrum. Currently available FIR sources based on non-solid state technology are bulky, inefficient, and very often incoherent. In this project we investigated antimonide based compound semiconductor (ABCS) nanostructures as the active medium to generate FIR radiation. The final goal of this project was to demonstrate a semiconductor THz source integrated with a pumping diode laser module to achieve a compact system for biomolecular applications.
Broadband electronically tunable sources in the terahertz range are a critical technology for enabling space-borne as well as ground-based applications. By power-combining MMIC amplifier and frequency tripler chips, we have recently demonstrated >1 mW of output power at 900 GHz. This source provides a stepping stone to enable sources in the 2-3 THz range than can sufficiently pump multi-pixel imaging arrays.
Quantum cascade lasers (QCLs) are unipolar semiconductor lasers, where the wavelength of emitted radiation is determined by the engineering of quantum states within the conduction band in coupled multiple-quantum-well heterostructures to have the desired energy separation. The recent development of terahertz QCLs has provided a new generation of solid-state sources for radiation in the terahertz frequency range. Terahertz QCLs have been demonstrated from 0.84 to 5.0 THz both in pulsed mode and continuous wave mode (CW mode). The approach employs a resonant-phonon depopulation concept. The metal-metal (MM) waveguide fabrication is performed using Cu-Cu thermo-compression bonding to bond the GaAs/AlGaAs epitaxial layer to a GaAs receptor wafer.
In this paper, we address the needs of the FIR space-flight community, providing an introductory-level treatment of the common heterodyne receiver configurations and the state of technology for various front-end components.
The present invention generally provides a terahertz (THz) imaging system that includes a source for generating radiation (e.g., a quantum cascade laser) having one or more frequencies in a range of about 0.1 THz to about 10 THz, and a two-dimensional detector array comprising a plurality of radiation detecting elements that are capable of detecting radiation in that frequency range. An optical system directs radiation from the source to an object to be imaged. The detector array detects at least a portion of the radiation transmitted through the object (or reflected by the object) so as to form a THz image of that object.
We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.l-μm gatelength InAI/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an fmax above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz.
We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.
We describe the infrared properties of sources detected over approx 36 sq deg of sky in the GAMA 15-hr equatorial field, using data from both the Herschel Astrophysical Terahertz Large-Area Survey (HATLAS) and Wide-field Infrared Survey (WISE). With 5sigma point-source depths of 34 and 0.048 mJy at 250 micron and 3.4 micron, respectively, we are able to identify 50.6% of the H-ATLAS sources in the WISE survey, corresponding to a surface density of approx 630 deg(exp -2). Approximately two-thirds of these sources have measured spectroscopic or optical/near-IR photometric redshifts of z < 1. For sources with spectroscopic redshifts at z < 0.3, we find a linear correlation between the infrared luminosity at 3.4 micron and that at 250 micron, with +/- 50% scatter over approx 1.5 orders of magnitude in luminosity, approx 10(exp 9) - 10(exp 10.5) Solar Luminosity By contrast, the matched sources without previously measured redshifts (r approx > 20.5) have 250-350 micron flux density ratios that suggest either high-redshift galaxies (z approx > 1.5) or optically faint low-redshift galaxies with unusually low temperatures (T approx < 20). Their small 3.4-250 micron flux ratios favor a high-redshift galaxy population, as only the most actively star-forming galaxies at low redshift (e.g., Arp 220) exhibit comparable flux density ratios. Furthermore, we find a relatively large AGN fraction (approx 30%) in a 12 micron flux-limited subsample of H-ATLAS sources, also consistent with there being a significant population of high-redshift sources in the no-redshift sample
We describe the infrared properties of sources detected over approx. 36 deg2 of sky in the GAMA 15-hr equatorial field, using data from both the Herschel Astrophysical Terahertz Large-Area Survey (H-ATLAS) and Wide-field Infrared Survey (WISE). With 5(sigma) point-source depths of 34 and 0.048 mJy at 250 microns and 3.4 microns, respectively, we are able to identify 50.6% of the H-ATLAS sources in the WISE survey, corresponding to a surface density of approx. 630 deg-2. Approximately two-thirds of these sources have measured spectroscopic or optical/near-IR photometric redshifts of z < 1. For sources with spectroscopic redshifts at z < 0.3, we find a linear correlation between the infrared luminosity at 3.4 microns and that at 250 microns, with +/-50% scatter over approx. 1.5 orders of magnitude in luminosity, approx. 10(exp 9) - 10(exp 10.5) Stellar Luminosity. By contrast, the matched sources without previously measured redshifts (r > or approx. 20.5) have 250-350 microns flux density ratios that suggest either high-redshift galaxies (z > or approx. 1.5) or optically faint low-redshift galaxies with unusually low temperatures (T < or approx. 20). Their small 3.4-250 microns flux ratios favor a high-redshift galaxy population, as only the most actively star-forming galaxies at low redshift (e.g., Arp 220) exhibit comparable flux density ratios. Furthermore, we find a relatively large AGN fraction (approx. 30%) in a 12 microns flux-limited subsample of H-ATLAS sources, also consistent with there being a significant population of high-redshift sources in the no-redshift sample.
Improved quantum-cascade lasers (QCLs) are being developed as electrically tunable sources of radiation in the far infrared spectral region, especially in the frequency range of 2 to 5 THz. The structures of QCLs and the processes used to fabricate them have much in common with those of multiple- quantum-well infrared photodetectors.
A fabrication process is reported for prototype emitters of THz radiation, which operate cryogenically, and should provide a fast, stable blackbody source suitable for characterization of THz devices. The fabrication has been demonstrated and, at the time of this reporting, testing was underway. The emitter is similar to a monolithic silicon bolometer in design, using both a low-noise thermometer and a heater element on a thermally isolated stage. An impedance-matched, high-emissivity coat ing is also integrated to tune the blackbody properties. This emitter is designed to emit a precise amount of power as a blackbody spectrum centered on terahertz frequencies. The emission is a function of the blackbody temperature. An integrated resistive heater and thermometer system can control the temperature of the blackbody with greater precision than previous incarnations of calibration sources that relied on blackbody emission. The emitter is fabricated using a silicon- on-insulator substrate wafer. The buried oxide is chosen to be less than 1 micron thick, and the silicon device thickness is 1-2 microns. Layers of phosphorus compensated with boron are implanted into and diffused throughout the full thickness of the silicon device layer to create the thermometer and heater components. Degenerately doped wiring is implanted to connect the devices to wire-bondable contact pads at the edge of the emitter chip. Then the device is micromachined to remove the thick-handle silicon behind the thermometer and heater components, and to thermally isolate it on a silicon membrane. An impedance- matched emissive coating (ion assisted evaporated Bi) is applied to the back of the membrane to enable high-efficiency emission of the blackbody spectrum.
Obtaining temperature, pressure, and composition profiles along with wind velocities in the Earth's thermosphere/ionosphere system is a key NASA goal for understanding our planet. We report on the status of a technology development effort to build an all-solid-state heterodyne receiver at 2.06 terahertz that will allow the measurement of the 2.06 terahertz [OI] line for altitudes greater than 100 kilometers. The receiver front end features low-parasitic Schottky diode mixer chips that are driven by a local oscillator (LO) source using Schottky diode based multipliers. The multiplier chain consists of a 38 gigahertz oscillator followed by a set of three cascaded triplers at 114 gigahertz, 343 gigahertz and 1.03 terahertz.
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Foam loss on the External Tank (ET) during launch can be caused by a number of factors. Voids are the best understood mechanism of foam loss, although it is known that delaminations, cracks and crushed foam can also lead to liberation of foam. Shortly after the Columbia accident, work began on non-destructive evaluation of foam targeted at finding voids and delaminations. After several months of searching for candidate methods capable of inspecting ET foam, the five most promising techniques were taken through a blind test and narrowed down to two methods to develop and use for inspection of the ET. These methods were backscatter radiography and terahertz imaging. The backscatter radiography system measures a test part by detecting Compton backscattered x-ray energy generated by a collimated beam of x-rays directed at the test subject. This collimated beam is scanned across the subject, recording scatter intensity data one pixel at a time until the area of interest is covered. The resulting data can be used to generate an image similar to a radiograph. Some depth information can be gathered utilizing apertures or collimation on the detectors. The detectors are located around the collimated source, making this a single sided inspection. The void detection limit with the currently utilized system is around 0.5 inches in diameter by 0.2 inches high. The terahertz imaging system inspects a test part by utilizing a transceiver to emit a pulse focused at the aluminum skin of the ET, which reflects it back to the transceiver where it is analyzed. The transceiver is scanned across the area of interest until a measurement has been taken at every location. Amplitude, time delay and frequency content are examined to note any discontinuities which may be the result of a void or other type of defect. The pulse currently utilized is in the millimeter wave regime. The void detection limit with this system is around 0.5 inches in diameter by 0.2 inches high. With increased interest in other causes of foam loss following the flight of Discovery in July 2005, laser shearography was added to the techniques used for inspecting ET foam. The shearography method records a sheared image of a laser speckle pattern projected on a test part before And after some sort of excitation. The resultant fringe pattern allows the slope of the out of plane displacement to be measured. For crushed and delaminated foam applications, a non-contact air coupled acoustic force is used to excite the surface of the foam. Regions without defects tend to respond differently to the sound energy than do regions with defects, generating a map of the foam integrity. Foam crushed to a depth of about 0.1 inches is detectable with shearography even after it has relaxed to its original shape.
NASA's prospective sub-mm-wave astrophysical missions encompass the Small Explorer Submillimeter Wave Astronomy Satellite, scheduled for launch in 1995, the Submillimeter Intermediate Mission, and the Large Deployable Reflector; until these are operational, sub-mm observations will be conducted at mountain sites and aboard aircraft platforms. Attention is presently given to the technical challenges faced by terahertz-range receiver developers, and it is noted that optically pumped sub-mm lasers furnish the only practical local oscillation source for heterodyne receivers in the 600-3000 GHz range. An account is given of ground-based and airborne astrophysical applications of heterodyne receivers.