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Results for “Thermal oxidation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Oxygen-18 tracer study of the passive thermal oxidation of silicon

This work focuses on the thermal oxidation of silicon near 1273 K using the double-tracer oxidation method. The results confirm that oxidation occurs by the transport of electrically neutral nonnetwork oxygen through the interstitial space of the vitreous silica (v-SiO2) scale. Simultaneously, self- (or isotopic-) diffusion occurs in the network, resulting in characteristic isotopic fraction distributions near the gas-scale interface. The self-diffusion coefficients calculated from these profiles agree with those reported for tracer diffusion in v-SiO2, and the diffusion coefficient calculated from the scale growth is consistent with reported O2 permeation data. An important parameter that describes the double-oxidation behavior is a ratio relating the scale thickness grown during the second oxidation, the network self-diffusion coefficient for oxygen, and the time of the second oxidation.

Cawley, J. D.↗
DOE OSTI2023

Synthesis and Thermal Oxidation Resistance of Boron-Rich Boron–Carbide Material

A boron-rich boron–carbide material (B4+δC) was synthesized by spark plasma sintering of a ball-milled mixture of high-purity boron powder and graphitic carbon at a pressure of 7 MPa and a temperature of 1930 °C. This high-pressure, high-temperature synthesized material was recovered and characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, Vickers hardness measurements, and thermal oxidation studies. The X-ray diffraction studies revealed a single-phase rhombohedral structure (space group R-3m) with lattice parameters in hexagonal representation as a = 5.609 ± 0.007 Å and c = 12.082 ± 0.02 Å. The experimental lattice parameters result in a value of δ = 0.55, or the composition of the synthesized compound as B4.55C. The high-resolution scans of boron binding energy reveal the existence of a B-C bond at 188.5 eV. Raman spectroscopy reveals the existence of a 386 cm−1 vibrational mode representative of C-B-B linear chain formation due to excess boron in the lattice. The measured Vickers microhardness at a load of 200 gf shows a high hardness value of 33.8 ± 2.3 GPa. Thermal gravimetric studies on B4.55C were conducted at a temperature of 1300 °C in a compressed dry air environment, and its behavior is compared to other high-temperature ceramic materials such as high-entropy transition metal boride. The high neutron absorption cross section, high melting point, high mechanical strength, and thermal oxidation resistance make this material ideal for applications in extreme environments.

36 MATERIALS SCIENCE↗
NASA NTRS2005

Substituted Cyclohexene Endcaps for Polymers with Thermal-Oxidative Stability

This invention relates to polyimides having improved thermal-oxidative stability, to the process of preparing said polyimides, and the use of polyimide prepolymers in the preparation of prepregs and composites. The polyimides are particularly usefull in the preparation of fiber-reinforced, high-temperature composites for use in various engine parts including inlets, fan ducts, exit flaps and other parts of high speed aircraft. The polyimides are derived from the polymerization of effective amounts of at least one tetracarboxylic dianhydride, at least one polyamine and a novel dicarboxylic endcap having the formula presented.

Source record↗
DOE OSTI2025

Electron Inversion and Tunneling at Silicon Thermal Oxide Interfaces for Solar-Driven Molecular Catalysis to Syngas

Semiconductor photoelectrodes are regularly coupled to solid-state heterogeneous catalysts to perform solar-driven reduction of CO 2 . Less frequently, molecular catalysts are employed to better control the reactivity toward desired products, yet the development of robust semiconductor/molecule interfaces has proven challenging. Here, we demonstrate that a 2–3 nm thermal oxide layer on Si exhibits stability in aqueous solution, high photovoltage, and a photocurrent density of ∼10 mA/cm 2 for the solar-driven photoelectrochemical reduction of a homogeneous molecular catalyst, producing syngas with an ∼2:1 H 2 to CO ratio. Because of a low defect density, the oxide interface forms an electron inversion layer with metal-like electron density at cathodic potentials. This inversion layer facilitates electron transfer to redox-active molecules via tunneling even if the molecule’s reduction potential is beyond the semiconductor’s conduction band edge. Using an electrolyte solution composed of a homogeneous cobalt bis(terpyridine) catalyst in a water/organic solvent mixture, stable photoelectrochemistry was observed under 1-sun illumination, exhibiting an ∼30% Faradaic efficiency for CO that was similar to a glassy carbon electrode under comparable conditions. Furthermore, the results demonstrate that an ultrathin thermal oxide interface is a robust platform for development of aqueous-stable, molecule-driven photoelectrocatalysis.

Catalysts↗
DOE OSTI2023

Growth of titania and tin oxide from Ti 2 SnC via rapid thermal oxidation in air for lithium-ion battery application

Herein, we report the synthesis of TiO 2 –SnO 2 –C/carbide hybrid electrode materials for Li-ion batteries (LIBs) via two different methods of controlled oxidation of layered Ti 2 SnC. The material was partially oxidized in an open-air furnace (OAF) or using a rapid thermal annealing (RTA) approach to obtain the desired TiO 2 –SnO 2 –C/carbide hybrid material; the carbide phase encompassed both residual Ti 2 SnC and TiC as a reaction product. We tested the oxidized materials as an anode in a half cell to investigate their electrochemical performance in LIBs. Analysis of the various oxidation conditions indicated the highest initial lithiation capacity of 838 mAh/g at 100 mA/g for the sample oxidized in the OAF at 700°C for 1 h. Still, the delithiation capacity dropped to 427 mAh/g and faded over cycling. Long-term cycling demonstrated that the RTA sample treated at 800°C for 30 s was the most efficient, as it demonstrated a reversible capacity of around 270 mAh/g after 150 cycles, as well as a specific capacity of about 150 mAh/g under high cycling rate (2000 mA/g). Given the materials’ promising performance, this processing method could likely be applied to many other members of the MAX family, with a wide range of energy storage applications.

25 ENERGY STORAGE↗
NASA NTRS1992

Global Kinetic Constants for Thermal Oxidative Degradation of a Cellulosic Paper

Values of global kinetic constants for pyrolysis, thermal oxidative degradation, and char oxidation of a cellulosic paper were determined by a derivative thermal gravimetric study. The study was conducted at heating rates of 0.5, 1, 1.5, 3, and 5 C/min in ambient atmospheres of nitrogen, 0.28, 1.08, 5.2 percent oxygen concentrations, and air. Sample weight loss rate, concentrations of CO, CO2, and H2O in the degradation products, and oxygen consumption were continuously measured during the experiment. Values of activation energy, preexponential factor, orders of reaction, and yields of CO, CO2, H2O, total hydrocarbons, and char for each degradation reaction were derived from the results. Heat of reaction for each reaction was determined by differential scanning calorimetry. A comparison of the calculated CO, CO2, H2O, total hydrocarbons, sample weight loss rate, and oxygen consumption was made with the measured results using the derived kinetic constants, and the accuracy of the values of kinetic constants was discussed.

Kashiwagi, Takashi↗
NASA NTRS1984

Thermal oxidation of 3C silicon carbide single-crystal layers on silicon

Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.

Fung, C. D.↗
DOE OSTI2022

On the thermal oxidation of nuclear graphite relevant to high-temperature gas cooled reactors

Thermal oxidation of nuclear graphite components is highly undesirable because it can cause structural and property degradation that negatively affect a reactor's intended operation. In this work, the body of knowledge of nuclear graphite oxidation is highlighted, including when O 2 , H 2 O, and/or CO 2 are the oxidant. Oxidation conditions relevant to high-temperature gas-cooled reactors (i.e., when oxidation could occur either as an acute or chronic phenomenon) are emphasized. Here, the objective is to summarize graphite oxidation data in a practical and accessible way to inform future research and regulatory requirements. Although each grade of nuclear graphite is different, the oxidation mechanism has underlying commonalities. Although oxidation behavior is grade dependent, the general temperature dependence is well described by a sequence of elementary steps which become rate limiting. Because the regime transition temperature depends on sample microstructure, size, and oxidant supply rate, extrapolating results beyond the experimental range should be done cautiously. Gravimetric oxidation rate measurements generally replicate well. However, caution must be exercised when rates are estimated by other methods or for samples that deviate significantly in size. Air oxidation data for IG-110, NBG-18, and PCEA graphite is critically reviewed to emphasize this point. Despite the amount of experimental data, gaps remain. Sample size and shape effects are not fully explained. Data on the oxidant penetration depth are insufficient. Analytical assessments demonstrate that lower temperature oxidation does not necessarily imply that oxidation is uniform throughout the bulk. Oxidation occurs faster at higher temperature but is more localized to the exposed surface. Paradoxically, at equal mass loss percentage, low temperature oxidation leads to greater property degradation than at high temperature. The isolated effect of oxidation is important; however, a gap remains in the systematic understanding of any potential effect of neutron irradiation on graphite structure and reactivity.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Polyimides and Process for Preparing Polyimides Having Thermal-Oxidative Stability

Polyimides and the process for preparing polyimides having improved thermal-oxidative stability derived from the polymerization of effective amounts of one or more of the polyamines such as the aromatic diamines, one or more of the tetracarboxylic dianhydrides and a novel dicarboxylic endcap having formula with an R1 group of either hydrogen or an alkyl radical of one to four carbons, an R2 group of either OH, NH2, F, or Cl radical, an R3 group of either H, OH, NH2, F, Cl or an alkylene radical, an R4 group of either an alkyl, aryl, aryloxy, nitro, F, or Cl radical, and/or an R5 group of either H, alkyl, aryl, alkoxy, aryloxy, nitro, F, or Cl radical. The polyimides are useful particularly in the preparation of prepegs and PMR composites.

Meador, Mary Ann B.↗
NASA NTRS2001

Polyimides And Process For Preparing Polyimides Having Improved Thermal-Oxidative Stability

Polyimides and the process for preparing polyimides having improved thermal-oxidative stability derived from the polymerization of effective amounts of one or more of the polyamines such as the aromatic diamines, one or more of the tetracarboxylic dianhydrides and a novel dicarboxylic endcap having formula with an R 1 group of either hydrogen or an alkyl radical of one to four carbons, an R 2 group of either OH, NH 2 , F, or Cl radical, an R 3 group of either H, OH, NH 2 , F, Cl or an alkylene radical, an R 4 group of either an alkyl, aryl, aryloxy, nitro, F, or Cl radical, and/or an R 5 group of either H, alkyl, aryl, alkoxy, aryloxy, nitro, F, or Cl radical. The polyimides are useful particularly in the preparation of prepegs and PMR composites.

Mary Ann B Meador↗
NASA NTRS2003

A Nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation

We have developed a new nanochannel fabrication technique using chemical-mechanical polishing (CMP) and thermal oxidation. With this technique, it is possible to control the width, length, and depth of the nanochannels without the need for nanolithography. The use of sacrificial SiO2 layers allows the fabrication of centimeter-long nanochannels. In addition, the fabrication process is CMOS compatible. We have successfully fabricated an array of extremely long and narrow nanochannels (i.e. 10 mm long, 25 nm wide and 100 nm deep) with smooth inner surfaces.

bionanotechnology↗
NASA NTRS1975

Nuclear magnetic resonance study of thermal oxidation of polyisoprene

An investigation was conducted concerning the microstructural changes occurring in cis- and trans-1,4-polyisoprenes during uncatalized thermal oxidation in the solid phase. The investigation made use of approaches based on proton and carbon-13 NMR spectroscopy. The oxidation of squalene and dihydromyrcene in the liquid phase was also studied. The studies provide the first NMR spectroscopic evidence for the presence of epoxy and peroxide, hydroperoxide, and alcohol groups within the oxidized polyisoprene chain.

Golub, M. A.↗
NASA NTRS1992

Thermal oxidation of single-crystal silicon carbide - Kinetic, electrical, and chemical studies

This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H SiC in wet and dry oxidizing ambients. Values for the linear and parabolic rate constants were obtained, as well as preliminary results for the activation energies of the rate constants. Examples are presented describing how thermal oxidation can be used to map polytypes and characterize defects in epitaxial layers grown on low tilt angle 6H SiC substrates. Interface widths were measured using Auger electron spectroscopy (AES) with Ar ion beam depth profiling and variable angle spectroscopic ellipsometry (VASE) with effective medium approximation (EMA) models. Preliminary electrical measurements of MOS capacitors are also presented.

Petit, J. B.↗