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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Synthesis and Physical Properties of Manganese Chromium Nitride Thin Films Grown via Molecular Beam Epitaxy

Here, we demonstrate the ability to grow epitaxial thin films of manganese–chromium nitride (Mn x Cr 1–x N) across the entire composition range on magnesium oxide (MgO) (1 0 0) surfaces by molecular beam epitaxy. By independently controlling the ratio of the atomic fluxes of manganese and chromium, the compositional dependence of structural and electrical transport properties is determined. Soft X-ray absorption shows that the valence states of Cr( 3+ ) and Mn( 3+ ) remain identical among these MnCrN epitaxial films. The metallic transport behavior of binary manganese nitride (MnN) and chromium nitride (CrN) is suppressed in the ternary alloys. Changes in room temperature electrical resistivity of up to 100 times and 5 orders of magnitude at cryogenic temperatures are observed. This work expands the variety of nitride compounds available for epitaxial integration and could provide additional flexibility for the development of metal–semiconductor–insulator junctions for spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Single-beam ion source enhanced growth of transparent conductive thin films

A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. Furthermore, the ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Superconducting phase of Ti x O y thin films grown by molecular beam epitaxy

Here we investigate the complex relationship between the growth conditions and the structural and transport properties of Ti x O y thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure P Ox for films grown on (0001)-Al 2 O 3 substrates at 850° C. A cubic c-TiO 1±δ buffer layer is formed for low O/Ti ratios, while a corundum cr-Ti 2 O 3 layer is formed under higher-oxidizing conditions. Metallicity is observed for c-TiO 1-δ buffer layers. The superconducting γ -Ti 3 O 5 Magnéli phase is found to nucleate on a c-TiO 1-δ buffer for intermediate POx conditions, and an insulator-superconducting transition is observed at 4.5 K (T$^{onset}_{C}$ = 6K) for 85 nm thick films. Strain relaxation of γ -Ti 3 O 5 occurs with increasing film thickness and correlates with a thickness-dependent increase in T C observed for Ti x O y thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Evidence for In-Plane Electrical Polarization in 3R-β’-In 2 Se 3 Thin Films Grown by Molecular Beam Epitaxy

β-In 2 Se 3 has been identified as a potential ferroelectric. This work describes the growth of β-In 2 Se 3 via molecular beam epitaxy along with a description of its properties, including the search for switchable polarization in 3R-β’-In2Se3. The thin-film morphology, crystal structure, and phase maps of β-In 2 Se 3 on Si(111) and Al 2 O 3 (0001) were evaluated by atomic force microscopy, X-ray diffraction, and Raman spectroscopy as a function of the atomic Se/In flux ratio and growth temperature. Smooth β-In 2 Se 3 thin films were successfully realized on Si(111) at a substrate temperature of 150 °C using a Se/In flux ratio of 5.7, as well as on Al 2 O 3 (0001) at 450 °C using a Se/In flux ratio of 5.5. Scanning transmission electron microscopy (STEM) confirms the 3R polytype of β-In 2 Se 3 in films on both substrates, with a minor disorder associated with the 2H polytype at the interface. Indications of in-plane Se atom displacements characteristic of the 3R-β’-In 2 Se 3 polytype were found by STEM and second harmonic generation analysis in films on Al 2 O 3 (0001), but not in films on Si(111). Furthermore, attempts at electrical polarization switching did not produce compelling evidence for ferroelectricity. Instead, electrical transport measurements demonstrated locally varying anisotropic responses with the applied electric fields along different in-plane directions, with some hysteresis associated with the trapping of charges.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Gaussian beam quantum radar protocol

We present an entangled quantum radar protocol. It consists in scanning the sky with a thin Gaussian beam and measuring the travel time of the radiation reflected from the target, as in conventional radars. Here the Gaussian beam is composed of $N$ photons entangled in the frequency degrees of freedom. We show that this provides a $\sqrt{N}$ quantum enhancement over the unentangled case, as is usual in quantum metrology.

Maccone, Lorenzo↗
DOE OSTI2024

Metal DiSulfide thin films synthesized by pulsed ion beam ablation: Self-assembled structures with improved mechanical properties in humid conditions

Thin films composed of transition metal dichalcogenides such as molybdenum disulfide (MoS 2 ) or tungsten disulfide (WS 2 ) are well known for their solid lubricating behavior in dry environments such as space, but deteriorate rapidly in environments where oxygen is present. There have been many attempts over recent decades to improve MoS 2 lubricating performance in humid environments by addition of metals such as titanium to the film. The additions have come in the form of co-sputtering with the MoS 2 , or formation of nano multilayer coatings. We have previously reported on the synthesis of MoS 2 films by high-power ion beam ablation [Prasad et al, Matls. Lett. 65 (2010) 4–6]. The resulting films are observed to contain spheres of pure Mo of 10–100 nm size evenly dispersed throughout the ~1 μm-thick film, a form of self-assembly not before seen in films produced by sputtering or by pulsed laser deposition (PLD). The remaining Mosingle bondS matrix was observed to crystalize in situ under frictional contact into MoS 2 with the basal planes orienting themselves in the direction of sliding underneath the wear surface. The present study concerns metal additions in the form of alternating layers with MoS 2 deposited in between from an ablation target. The addition of Ti resulted in the extension of good tribological performance to humid air conditions, but the path to good performance appears to be relatively narrow. The same distributed Mo spheres were present in the new film, and similar self-assembled morphologies when V was substituted for the Ti, and when multilayers were formed of WS 2 with Zr additions. Furthermore, it appears that addition of Ti resulted in improvements in mechanical film strength that contributed to the wear ability in humid conditions.

Intense ion beams↗
DOE OSTI2021

Estimating Beam-Target Heating

At Los Alamos National Laboratory, two high-current linear induction accelerators (LIAs) are used to produce bremsstrahlung source spots for flash radiography of high-explosive driven hydrodynamic experiments at the Dual Axis Radiographic Hydrodynamic Test (DARHT) facility. Measurements of the electron-beam current density profile are valuable for understanding the beam dynamics in order to improve the quality of the radiography source spot. A technique commonly used at DARHT is to image the profile in Cerenkov or Optical Transition Radiation (OTR) light created by the beam striking a thin target inserted into the beam line. Target materials include aluminized dielectrics and titanium foils for OTR, and fused silica wafers for Cerenkov radiation. A practical complication with this technique is heating of the target by the electron beam. If the beam density is too great, the target can be destroyed. Moreover, even if the beam density is kept low enough to be nondestructive, the beam can heat the target to a high enough temperature to desorb gas from the surface. In that case, direct impact ionization of the gas by beam electrons can partially neutralize the beam, causing it to over-focus, thereby spoiling the data, if not destroying the target. The purpose of this note is to review some of the fundamental physics of electron beam heating in order to provide some elementary guidance for design of these imaging experiments to avoid overheating the target. Some specific examples for materials that we often use for imaging targets and beam-target experiments are provided.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Site-specific plan-view (S)TEM sample preparation from thin films using a dual-beam FIB-SEM

To fully evaluate the atomic structure, and associated properties of materials using transmission electron microscopy, examination of samples from three non-collinear orientations is needed. This is particularly challenging for thin films and nanoscale devices built on substrates due to limitations with plan-view sample preparation. In this work, a new method for preparation of high-quality, site-specific, plan-view TEM samples from thin-films grown on substrates, is presented and discussed. Here, it is based on using a dual-beam focused ion beam scanning electron microscope (FIB-SEM) system. To demonstrate the method, the samples were prepared from thin films of perovskite oxide BaSnO 3 grown on a SrTiO 3 substrate and metal oxide IrO 2 on a TiO 2 substrate, ranging from 20–80 nm in thicknesses using molecular beam epitaxy. While the method is optimized for the thin films, it can be extended to other site-specific plan-view samples and devices build on wafers. Aberration-corrected STEM was used to evaluate the quality of the samples and their applicability for atomic-resolution imaging and analysis.

BaSnO3↗
DOE OSTI2022

Novel X-ray scanning technique for in-situ alignment of photo-detectors in the MEGII calorimeter

Here, we describe and show results of a novel technique to measure with high precision the positions of photodetectors installed in the upgraded liquid xenon calorimeter of the MEG II experiment. The measurement was done by detecting the signal in individual photo-detectors as the front surface of the calorimeter was scanned in axial (Z) and azimuthal (Φ) directions with a precisely controlled, thin, collimated beam of X-rays obtained from a 57 CoX-ray source. The measurements were made when the calorimeter was cold and operational, under which conditions they could not otherwise be made. This technique is used to check for changes in the photodetector positions due to the effects of cooling and thermal cycling of the support structure and to provide a reference between the positions of the operational photodetectors and alignment markers on the cryostat exterior. The use of an essentially monochromatic X-ray source allowed ancillary measurements of photodetector properties, including pulse shape, relative gain, and variation in response over the photodetector surface. Measurement uncertainties below 0.6mm in Z and 0.7 mrad in Φ have been achieved, well within the requirements for the MEG II performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Anisotropic resistance with a 90° twist in a ferromagnetic Weyl semimetal, Co 2 MnGa

Weyl semimetals exhibit exotic magnetotransport phenomena such as the chiral anomaly and surface-to-bulk quantum oscillations (Weyl orbits) due to chiral bulk states and topologically protected surface states. Here we report a unique transport property in crystals of the ferromagnetic nodal-line Weyl semimetal Co 2 MnGa that have been polished to micron thicknesses using a focused ion beam. These thin crystals exhibit a large planar resistance anisotropy (10 × ) with axes that rotate by 90 degrees between opposite faces of the crystal. We use symmetry arguments and electrostatic simulations to show that the observed anisotropy resembles that of an isotropic conductor with surface states that are impeded from hybridization with bulk states. The origin of these states awaits further experiments that can correlate the surface bands with the observed 90° twist.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Novel Focused Ion Beam Liftouts for Spatial Characterization of Spherical Biominerals With Transmission Electron Microscopy

Abstract Focused ion beam (FIB) is frequently used to prepare electron- and X-ray-beam-transparent thin sections of samples, called lamellae. Typically, lamellae are prepared from only a subregion of a sample. In this paper, we present a novel approach for FIB lamella preparation of microscopic samples, wherein the entire cross-section of the whole sample can be investigated. The approach was demonstrated using spherical, porous, and often hollow microprecipitates of biologically precipitated calcium carbonate. The microprecipitate morphology made these biogenic samples more fragile and challenging than materials commonly investigated using FIB lamellae. Our method enables the appropriate orientation of the lamellae required for further electron/X-ray analyses after attachment to the transmission electron microscopy (TEM) grid post and facilitates more secure adhesion onto the grid post. We present evidence of autofluorescence in bacterially precipitated vaterite using this lamella preparation method coupled with TEM selected area diffraction. This innovative approach allows studying biomineralization at the micro to nano scales, which can provide novel insights into bacterial responses to microenvironmental conditions.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Satellite Enveloped with STITCHED Engineering Sensors for Detection of Approaching Objects

Today as well as tomorrows spaceborne assets impact almost all areas of national and nuclear security. Spaceborne assets can not only collect and disseminate valuable data, well beyond just the visual, but also track terrestrial-based mobile assets in real-time, and active spaceborne platforms potentially pose serious risk to vulnerable earth-based systems and infrastructures. The capability to defend national spaceborne assets from attack/interference is critical for security interests. This effort supports this mission through the cost-effective preeminent detection of approaching threats to our nation’s vital resources, in order to help secure and trust these high-value assets against the threats of tomorrow. This project develops novel fabrication techniques for conformal, low-profile and lightweight leakywave antenna (LWA) detection/imaging systems, which fuses technical embroidery (TE) and laser ablation (LA) processes with LWA design. Technical embroidery is an emerging field in additive textile manufacturing where flexible materials and functionalized fabrics are created for a wide variety of uses and purposes, while laser ablation is the process of removing material from a solid surface by irradiating it with a laser beam. Here, thin, conformal antenna designs are designed, modeled and fabricated using both TE and LA, to create lightweight, flexible and conformal object detection and imaging radars. This novel development ensures our nation’s ability to field advanced lightweight and conformal technologies to protect spaceborne assets.

42 ENGINEERING↗
DOE OSTI2025

Synthesis and characterization of electron beam irradiation-induced damage in polycrystalline metal thin films

High-energy physics research, industrial sterilizing, and material processing depend extensively on electron beam accelerators. Exit windows are crucial components of such electron accelerator systems, maintaining vacuum integrity inside the machine while providing mechanical strength, thermal stability, and radiation resistance at the beam-target interface. In this study, thin metallic films of Ni, Ti, Cr, and V were explored for use in electron beam exit windows, and their properties were compared with the properties of their bulk counterparts. Simulation results of metal foils predicted Ti to exhibit less beam power dissipation compared to Ni. However, Ni possesses superior mechanical and structural properties compared to Ti. The performance of these films under electron beam irradiation was examined by depositing thin layers of these films on silicon and metallic substrates using magnetron sputtering and exposing them to e-beam irradiation in a controlled setup. The deposited films were subjected to a dose of approximately 66 kGy at a beam energy of 10 MeV and characterized prior to and postexposure to the beam using field emission scanning electron microscopy, atomic force microscopy, x-ray diffraction (XRD), and nanoindentation. Particular emphasis was given to characteristics like the grain structure, surface morphology, dislocation density, and hardness. XRD patterns revealed irradiation-induced changes in peak intensities, while the crystallinity remained largely unchanged. Nanoindentation results showed that the pristine and irradiated Ti and Ni films were twice as hard when compared to bulk Ti and Ni samples, regardless of the substrate type used (Si or bulk Ti, or Ni). These results emphasize the superior mechanical properties of thin metal films compared to their bulk counterparts. In conclusion, this study advances the optimization of thin film materials for robust and efficient e-beam applications, ensuring improved durability and operational reliability.

AFM↗
DOE OSTI2023

Ion-beam assisted sputtering of titanium nitride thin films

Abstract Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures $$T_{c}$$ T c as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting $$T_c$$ T c in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting $$T_c$$ T c due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Progress in Epitaxial Thin-Film Na 3 Bi as a Topological Electronic Material

Trisodium bismuthide (Na 3 Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na 3 Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na 3 Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. Furthermore, the emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress.

36 MATERIALS SCIENCE↗