Evaporation rates of PbTe and Pb sub .5 Sn sub .5 Te pressed and sintered thermoelements.
Evaporation rates of lead telluride and lead tin telluride in pressed and sintered thermoelement form
TIN COMPOUND↗
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Growth of Compound Semiconductors in a Low Gravity Environment: Microgravity Growth of PbSnTe
The growth of the alloy compound semiconductor lead tin telluride (PbSnTe) was chosen for a microgravity flight experiment in the Advanced Automated Directional Solidification Furnace (AADSF), on the United States Microgravity Payload-3 (USMP-3) and on USMP-4 Space Shuttle flights in February, 1996, and November, 1997. The objective of these experiments was to determine the effect of the reduction in convection, during the growth process, brought about by the microgravity environment. The properties of devices made from PbSnTe are dependent on the ratio of the elemental components in the starting crystal. Compositional uniformity in the crystal is only obtained if there is no significant mixing in the liquid during growth. Lead tin telluride is an alloy of PbTe and SnTe. The technological importance of PbSnTe lies in its band gap versus composition diagram which has a zero energy crossing at approximately 40% SnTe. This facilitates the construction of long wavelength (>6 micron) infrared detectors and lasers. Observations and experimental methods of crystal growth of PbSnTe on both Space Shuttle Flights are presented.
Fripp, Archibald L.↗
Investigation of the effect of pressure on metallurgical phenomena Final report, 20 Jun. 1960 - 30 Sep. 1965
Pressure effect on lead-thallium, tin telluride, and lead telluride
LEAD ALLOY↗
New PbSnTe heterojunction laser diode structures with improved performance
Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.
Fonstad, C. G.↗
Synthesis of Narrow SnTe Nanowires Using Alloy Nanoparticles
Topological crystalline insulator tin telluride (SnTe) provides a rich playground to examine interactions of correlated electronic states, such as ferroelectricity, topological surface states, and superconductivity. The study of SnTe nanowires may lead to even richer physics owing to the one-dimensional (1D) confinement effect and an increased contribution from the topological surface states. Thus, for transport measurements, SnTe nanowires must be synthesized with reduced diameters and high crystalline quality to ensure 1D confinement and phase coherence of the topological surface electrons. Here, we report a facile growth method to produce narrow SnTe nanowires with a high yield using alloy nanoparticles as growth catalysts. The average diameter of the SnTe nanowires grown using alloy nanoparticles is 85 nm, nearly a factor of three reduction compared to the average diameter of 240 nm when using gold nanoparticles as growth catalysts. Transport measurements reveal the effect of the nanowire diameter on the residual resistance ratio and magnetoresistance. Particularly, the ferroelectric transition temperature for SnTe evolves systematically with the nanowire diameter. In situ cryogenic cooling of narrow SnTe nanowires in a transmission electron microscope directly reveals the cubic to rhombohedral structural transition, which is associated with the ferroelectric transition. Thus, these narrow SnTe nanowires represent a model system to study electronic states arising from 1D confinement, such as 1D topological superconductivity and potential multiband superconductivity.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Long wavelength PbSnTe lasers with CW operation above 77 K
Lead tin telluride diode lasers with emission wavelengths of 6 to 9 micrometers easily operate continuously at temperatures above 77K. These lasers have the Pb(1-y) Sn(y) TE/Pb(1-y) Te/Pb(1-y) Sn(y) Te/PbTe (substrate), (x y) double heterostructure. To prepare this structure by LPE, the growth temperature must be below 600 C to suppress diffusion of the tin during the epitaxial growth. When the heterojunctions are formed by the usual LPE method, the junction boundaries become irregular in the case for the lasers with wavelengths of over 10 micrometers at 77K. The mechanism by which the heterojunction boundaries become irregular is cleared and a new LPE method which prevents the irregularity is explained. The lasers prepared from the wafers grown by the new method have demonstrated CW operation at wavelengths longer than 10 micrometers above liquid nitrogen temperature.
Shinohara, K.↗
One Dimensional Topological Nanomaterials and Superconductivity (Final Technical Report)
The project synthesized and made transport properties of topological crystalline insulator tin telluride (SnTe) nanowires and other topological materials, such as MoTe 2 and WTe 2 . The transport properties of the nanowires were correlated with the diameter of the nanowire, in terms of the ferroelectric phase transition temperature, magnetoresistance response, and Josephson junction behaviors as a function of the nanowire diameter. The most important observation was the proximity-induced superconductivity in SnTe nanowires, which suggests time reversal symmetry breaking.
36 MATERIALS SCIENCE↗
Photodiodes for ten micrometer laser communication systems
The performance is discussed of 10-micron mercury-cadmiumtelluride and lead-tin-telluride photodiodes in laser heterodyne communication systems. The dependence of detector quantum efficiency, resistance, frequency response, and signal-to-noise ratio on temperature, bias, and local oscillator power are examined. Included in the discussion is an analysis of the feasibility of high temperature operation, and ability of the detector to dissipate power to a heat sink is explored. Some aspects of direct detection response are considered and figures showing flux levels from a blackbody presented.
Cohen, S. C.↗
Experimental investigation of the effects of gravity on thermosolutal convection and compositional homogeneity in Bridgman grown, compound semiconductors
Lead-tin-telluride has been grown in a thermally stable mode (solutally unstable) and in a solutally stable (thermally unstable) mode in a Bridgman configuration. Significant differences in the crystal morphology and the compositional homogeneity have been found between the two configurations. In addition, for the solutally stable configuration, evidence has been found that the flow characteristics in the melt change drastically during the course of the run.
Crouch, R. K.↗
Crystal Growth Research in Space
The objectives of this work are to develop growth techniques and theory leading to improved bulk growth of semiconductor single crystals. Ground based experiments will be complemented by experiments carried out in the low-g environment provided by the space shuttle. Analytical studies and laboratory investigations are being conducted to better define the causes of crystalline defects and inhomogeneities. The compound semiconductor lead-tin-telluride is being used as the modeling material. Theoretical techniques are being developed to predict the thermal and solutal fields which are present during bulk growth from a melt. Techniques for measuring the thermophysical properties of semiconductors at high temperatures have been developed. During the past year electrochemical etching techniques have been developed for delineation of inhomogeneous regions in crystals. Thermal diffusivity measurements have been completed for the solid and liquid phases of PbTe and PbSnTe. Preliminary results have been obtained on the effects on crystal morphology of gravity, interface shape and interaction between the melt and the container.
Crouch, R. K.↗
Imaging Of Directional-Solidification Interfaces
X-ray and gamma-ray technique developed at NASA Langley Research Center enables melt/solid interface to be observed visually during crystal growth by directional solidification in Bridgman furnace. Technique used to observe movement and shape of interface in germanium and in lead tin telluride. Valuable tool in efforts to grow seeded semiconductor materials in Bridgman furnaces.
Fripp, Archibald L., Jr.↗
Electrochemical Growth Of Crystals In Gels
Nucleation and growth rates readily controlled. Technique developed to grow crystals by controlling rate of transfer of one component into crystallization volume. Method involves electrochemically controlled generation of one of precipitation species, coupled with diffusion barrier. New procedure, developed in connection with formation of lead tin telluride by reaction in gels of metal ions with telluride ions.
Barber, Patrick G.↗
Results from a compound semiconductor crystal growth experiment in a low gravity environment
A directional solidification experiment in the compound semiconductor lead tin telluride has been carried out in a low-gravity environment on board the Space Shuttle during a flight in October, 1985. Optical etching techniques and concentration profiles from wavelength dispersive electron microscopy indicate that there was a significant amount of convection during the solidifcation of the sample. A preliminary hypothesis of this result, that even at gravity levels on the order of 0.0001 g, the convective forces can be significant compared to mass transport due to diffusion, is being tested.
Crouch, Roger K.↗
Modelling melt-solid interfaces in Bridgman growth
Doped epoxy models with abrupt interfaces were prepared to test radiographic and computer enhancement procedures used to study the images of melt-solid interfaces during crystal growth in Bridgman furnaces. A column averaging procedure resulted in improved images that faithfully reproduced the positions and shapes of interfaces even at very low density differences. These techniques were applied to lead tin telluride growing in Bridgman furnaces.
Barber, Patrick G.↗
Crystal regularity with high-resolution synchrotron X-radiation diffraction imaging
New, high-resolution sources of X-radiation such as monochromatic synchrotron radiation beams with subarcsec divergence allow observation of regularities in a range of crystals with sufficient clarity for comprehensive analyses, whose results can deepen understanding of the nature of various crystal irregularities, their sources, and their effects on device performance. An account is presented of the results thus achievable with irregularities encountered in lattice orientation and strain, grain and subgrain boundaries, dislocations, domain boundaries, additional phases, and surface scratches. Significant achievements to date encompass the observation of critical anomalies in lead tin telluride, the reconciliation of disparate observations of GaAs, the determination of the performance effects of irregularities in mercuric iodide, and the characterization of the origins of crystal growth in bismuth silicon oxide.
Steiner, Bruce↗
High resolution synchrotron X-radiation diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals
Irregularities in three crystals grown in space and in four terrestrial crystals grown under otherwise comparable conditions have been observed in high resolution diffraction imaging. The images provide important new clues to the nature and origins of irregularities in each crystal. For two of the materials, mercuric iodide and lead tin telluride, more than one phase (an array of non-diffracting inclusions) was observed in terrestrial samples; but the formation of these multiple phases appears to have been suppressed in directly comparable crystals grown in microgravity. The terrestrial seed crystal of triglycine sulfate displayed an unexpected layered structure, which propagated during directly comparable space growth. Terrestrial Bridgman regrowth of gallium arsenide revealed a mesoscopic structure substantially different from that of the original Czochralski material. A directly comparable crystal is to be grown shortly in space.
Steiner, Bruce↗
High resolution diffraction imaging of crystals grown in microgravity and closely related terrestrial crystals
Irregularities found in three crystals grown in space, in four crystals grown entirely on the ground were examined and compared. Irregularities were observed in mercuric iodide, lead tin telluride, triglycine sulfate, and gallium arsenide by high resolution synchrotron x radiation diffraction imaging. Radiation detectors made from mercuric iodide crystals grown in microgravity were reported to perform far better than conventional detectors grown from the same material under full gravity. Effort is now underway to reproduce these 'space' crystals, optimize their properties, and extend comparable superiority to other types of materials.
Steiner, B.↗
Data acquisition from a crystal growth furnace
Digital acquisition from a furnace for growing the lead tin telluride crystal based on Asyst software is described. It is shown that the use of Asyst for the acquisition of experimental data makes it possible to handle large amounts of data and to drastically reduce the time required for displaying the data from several hours to less than 5 minutes.
Woodell, Glenn A.↗