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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Large-format electrographic and array detectors for a space Schmidt imaging telescope

Possible optical designs of imaging detectors for the spaceborne Schmidt telescope proposed by Carruthers et al. (1990) are discussed, surveying the currently or potentially available technology. Consideration is given to FUV electrographic detectors of large format (e.g., 120 mm with 10-micron resolution) using CsI photocathodes, the possible extension of the same technology to the mid-UV using Cs2Te instead of CsI, large CCD arrays for the visible and NIR, electron-bombarded CCDs for the FUV and mid-UV, and the data handling and processing requirements of these detectors.

Carruthers, George R.↗
NASA NTRS1987

Flash technology for charge-coupled-device imaging in the ultraviolet

The introduction of the flash gate has made possible the fabrication of backside-illuminated CCDs with high sensitivity and stability throughout a wide range of ultraviolet and visible wavelengths (100 to 5000 A). It had been determined previously that the characteristics of the oxide layer beneath the gate are critical to the ultimate achievable CCD performance. However, by creating an improved oxide layer in conjunction with the flash gate, it is now possible to consistently produce CCDs with near-ideal UV performance. In this paper recent results and related background theory that optimize the flash gate specifically for application in the UV are presented.

Janesick, James R.↗
NASA NTRS1989

Visible and Ultraviolet Detectors for High Earth Orbit and Lunar Observatories

The current status of detectors for the visible and UV for future large observatories in earth orbit and the moon is briefly reviewed. For the visible, CCDs have the highest quantum efficiency, but are subject to contamination of the data by cosmic ray hits. For the moon, the level of hits can be brought down to that at the earth's surface by shielding below about 20 meters of rock. For high earth orbits above the geomagnetic shield, CCDs might be able to be used by combining many short exposures and vetoing the cosmic ray hits, otherwise photoemissive detectors will be necessary. For the UV, photoemissive detectors will be necessary to reject the visible; to use CCDs would require the development of UV-efficient filters which reject the visible by many orders of magnitude. Development of higher count rate capability would be desirable for photoemissive detectors.

Woodgate, Bruce E.↗
NASA NTRS1989

Evaluation of large format electron bombarded virtual phase CCDs as ultraviolet imaging detectors

In conjunction with an external UV-sensitive cathode, an electron-bombarded CCD may be used as a high quantum efficiency/wide dynamic range photon-counting UV detector. Results are presented for the case of a 1024 x 1024, 18-micron square pixel virtual phase CCD used with an electromagnetically focused f/2 Schmidt camera, which yields excellent simgle-photoevent discrimination and counting efficiency. Attention is given to the vacuum-chamber arrangement used to conduct system tests and the CCD electronics and data-acquisition systems employed.

Opal, Chet B.↗
NASA NTRS1986

Thinning and mounting a Texas Instruments 3-phase CCD

Thin CCDs with precise control of thickness and surface quality allow astronomers to optimize chips for specific applications. A means of mechanically thinning a TI 800 x 800 CCD with an abrasive slurry of aluminum oxide is presented. Using the same techniques, the abrasives can be replaced with a chemical solution to eliminate subsurface damage. A technique of mounting the CCD which retains the high quality surface generated during thinning is also demonstrated. This requires the backside of the chip to be bonded to a glass window which closely matches silicon's thermal expansion properties. Thinned CCDs require backside treatment to enhance blue and UV quantum efficiency. Two methods are discussed which may be effective with this mounting system.

Lesser, M. P.↗
NASA NTRS2005

Single Particle Damage Events in Candidate Star Camera Sensors

Si charge coupled devices (CCDs) are currently the preeminent detector in star cameras as well as in the near ultraviolet (uv) to visible wavelength region for astronomical observations in space and in earth-observing space missions. Unfortunately, the performance of CCDs is permanently degraded by total ionizing dose (TID) and displacement damage effects. TID produces threshold voltage shifts on the CCD gates and displacement damage reduces the charge transfer efficiency (CTE), increases the dark current, produces dark current nonuniformities and creates random telegraph noise in individual pixels. In addition to these long term effects, cosmic ray and trapped proton transients also interfere with device operation on orbit. In the present paper, we investigate the dark current behavior of CCDs - in particular the formation and annealing of hot pixels. Such pixels degrade the ability of a CCD to perform science and also can present problems to the performance of star camera functions (especially if their numbers are not correctly anticipated). To date, most dark current radiation studies have been performed by irradiating the CCDs at room temperature but this can result in a significantly optimistic picture of the hot pixel count. We know from the Hubble Space Telescope (HST) that high dark current pixels (so-called hot pixels or hot spikes) accumulate as a function of time on orbit. For example, the HST Advanced Camera for Surveys/Wide Field Camera instrument performs monthly anneals despite the loss of observational time, in order to partially anneal the hot pixels. Note that the fact that significant reduction in hot pixel populations occurs for room temperature anneals is not presently understood since none of the commonly expected defects in Si (e.g. divacancy, E center, and A-center) anneal at such a low temperature. A HST Wide Field Camera 3 (WFC3) CCD manufactured by E2V was irradiated while operating at -83C and the dark current studied as a function of temperature while the CCD was warmed to a sequence of temperatures up to a maximum of +30C. The device was then cooled back down to -83 and re-measured. Hot pixel populations were tracked during the warm-up and cool-down. Hot pixel annealing began below 40C and the anneal process was largely completed before the detector reached +3OC. There was no apparent sharp temperature dependence in the annealing. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless remained warmer than the remaining population. The details of the mechanism for the formation and annealing of hot pixels is not presently understood, but it appears likely that hot pixels are associated with displacement damage occurring in high electric field regions.

Marshall, Paul↗
NASA NTRS1982

The development and applications of charge-coupled devices for space astronomy

The developments in charge-coupled device technology over the past decade are reviewed, with emphasis on the relevance of these developments to astronomical applications. The characteristics and limitations of current commercial devices are described, and the future requirements on CCDs for space astronomy are summarized for the X-ray and near UV, optical, and infrared wavelength ranges. Emphasis is placed on the commonality of technological development which is called for, including the issues of quantum detection efficiency (photon entrance and depletion depth), charge transfer efficiency, modulation transfer function, output noise level, and array size. The system requirements on focal plane instrumentation for space astronomy are summarized, and shown to have much in common for the different wavelength bands. These requirements are discussed in terms of CCD mosaicing, cryogenic cooling, and electronics. The overlap in CCD developments in the defense, astronomical and commercial arenas is summarized.

Griffiths, R. E.↗
DOE OSTI2024

Batch VUV4 characterization for the SBC-LAr10 scintillating bubble chamber

The Scintillating Bubble Chamber (SBC) collaboration purchased 32 Hamamatsu VUV4 silicon photomultipliers (SiPMs) for use in SBC-LAr10, a bubble chamber containing 10 kg of liquid argon. A dark-count characterization technique, which avoids the use of a single-photon source, was used at two temperatures to measure the VUV4 SiPMs breakdown voltage (V BD ), the SiPM gain (g SiPM ), the rate of change of g SiPM with respect to voltage (m), the dark count rate (DCR), and the probability of a correlated avalanche (P CA ) as well as the temperature coefficients of these parameters. A Peltier-based chilled vacuum chamber was developed at Queen's University to cool down the Quads to 233.15 ± 0.2 K and 255.15 ± 0.2 K with average stability of ±20 mK. An analysis framework was developed to estimate V BD to tens of mV precision and DCR close to Poissonian error. The temperature dependence of V BD was found to be 56 ± 2 mV K -1 , and m on average across all Quads was found to be (459 ± 3(stat.)±23(sys.))× 10 3 e- PE -1 V -1 . The average DCR temperature coefficient was estimated to be 0.099 ± 0.008 K -1 corresponding to a reduction factor of 7 for every 20 K drop in temperature. The average temperature dependence of P CA was estimated to be 4000 ± 1000 ppm K -1 . P CA estimated from the average across all SiPMs is a better estimator than the P CA calculated from individual SiPMs, for all of the other parameters, the opposite is true. All the estimated parameters were measured to the precision required for SBC-LAr10, and the Quads will be used in conditions to optimize the signal-to-noise ratio.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2009

OP09O-OP404-9 Wide Field Camera 3 CCD Quantum Efficiency Hysteresis

The HST/Wide Field Camera (WFC) 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. At the nominal operating temperature of -83C, the QEH feature contrast was typically 0.1-0.2% or less. The behavior was replicated using flight spare detectors. A visible light flat-field (540nm) with a several times full-well signal level can pin the detectors at both optical (600nm) and near-UV (230nm) wavelengths, suppressing the QEH behavior. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. The HST/Wide Field Camera 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. The first observed manifestation of QEH was the presence in a small percentage of flat-field images of a bowtie-shaped contrast that spanned the width of each chip. At the nominal operating temperature of -83C, the contrast observed for this feature was typically 0.1-0.2% or less, though at warmer temperatures contrasts up to 5% (at -50C) have been observed. The bowtie morphology was replicated using flight spare detectors in tests at the GSFC Detector Characterization Laboratory by power cycling the detector while cold. Continued investigation revealed that a clearly-related global QE suppression at the approximately 5% level can be produced by cooling the detector in the dark; subsequent flat-field exposures at a constant illumination show asymptotically increasing response. This QE "pinning" can be achieved with a single high signal flat-field or a series of lower signal flats; a visible light (500-580nm) flat-field with a signal level of several hundred thousand electrons per pixel is sufficient for QE pinning at both optical (600nm) and near-UV (230nm) wavelengths. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. A preliminary estimate of the decay timescale for one detector is that a drop of 0.1-0.2% occurs over a ten day period, indicating that relatively infrequent cal lamp exposures can mitigate the behavior to extremely low levels.

Collins, Nick↗
NASA NTRS1986

The CCD flash gate

Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of a less than 4-micron thick layer of metal with high work function to the backside of the CCD can yield 100-percent internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (the 'CCD flash gate'), and a considerable amount of experimental data, are discussed. Specific recommendations for use of the flash gate in present and future CCDs are also reviewed.

Janesick, James↗
NASA NTRS2018

The Star-Planet Activity Research CubeSat (SPARCS): A Mission to Understand the Impact of Stars in Exoplanets

The Star-Planet Activity Research CubeSat (SPARCS) is a NASA-funded astrophysics mission, devoted to study the ultraviolet (UV) time-domain behavior in low-mass stars. Given their abundance and size, low-mass stars are important targets in the search for habitable-zone, extrasolar planets. However, not enough is known about the stars flare and quiescent emission, which powers photochemical reactions on the atmospheres of possible planets. Over its 1-year mission, SPARCS will stare at ~10 stars in order to measure short- (minutes) and long- (months) term variability simultaneously in the near-UV (NUV – 280 nm) and far-UV (FUV – 162 nm). SPARCS payload consists of a 9-cm reflector telescope paired with two high-sensitivity 2D-doped CCDs. The detectors are kept passively cooled at 238K, in order to reduce dark-current contribution. The filters have been selected to provide strong rejection of longer wavelengths, where most of the starlight is emitted. The payload will be integrated within a 6U CubeSat to be placed on a Sun-synchronous terminator orbit, which allows for long observing stares for all targets. Launch is expected to occur not earlier than October 2021.

Zellem, Robert↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

charged coupled devices (CCDs)↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗
DOE OSTI2024

Doping liquid argon with xenon in ProtoDUNE Single-Phase: effects on scintillation light

Doping of liquid argon TPCs (LArTPCs) with a small concentration of xenon is a technique for light-shifting and facilitates the detection of the liquid argon scintillation light. In this paper, we present the results of the first doping test ever performed in a kiloton-scale LArTPC. From February to May 2020, we carried out this special run in the single-phase DUNE Far Detector prototype (ProtoDUNE-SP) at CERN, featuring 720 t of total liquid argon mass with 410 t of fiducial mass. A 5.4 ppm nitrogen contamination was present during the xenon doping campaign. The goal of the run was to measure the light and charge response of the detector to the addition of xenon, up to a concentration of 18.8 ppm. The main purpose was to test the possibility for reduction of non-uniformities in light collection, caused by deployment of photon detectors only within the anode planes. Light collection was analysed as a function of the xenon concentration, by using the pre-existing photon detection system (PDS) of ProtoDUNE-SP and an additional smaller set-up installed specifically for this run. In this paper we first summarize our current understanding of the argon-xenon energy transfer process and the impact of the presence of nitrogen in argon with and without xenon dopant. We then describe the key elements of ProtoDUNE-SP and the injection method deployed. Two dedicated photon detectors were able to collect the light produced by xenon and the total light. The ratio of these components was measured to be about 0.65 as 18.8 ppm of xenon were injected. We performed studies of the collection efficiency as a function of the distance between tracks and light detectors, demonstrating enhanced uniformity of response for the anode-mounted PDS. We also show that xenon doping can substantially recover light losses due to contamination of the liquid argon by nitrogen.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Neutron detection efficiency measurements of organic glass scintillator arrays

We characterize the neutron detection efficiency of pixelated organic glass scintillator (OGS) arrays manufactured in two ways: an additive method in which the OGS is cast in place in a pixelated mold, and a subtractive method in which the scintillator is first cast as a large block before being cut in bars and bonded together to form the array. The cast-in-place array utilizes a mixture of “bis(9,9-dimethyl-9H-fluoren-2-yl)diphenylsilane” (P2), “tri([1,1'-biphenyl]-4-yl)(phenyl)silane” (PB3), and “4-bis(2-methylstyryl)benzene” (MSB), and 50% by weight of polystyrene is added to the mixture for subtractive manufactured array. We compare the performance of the OGS arrays to that of an EJ-299-33M plastic scintillator array that was manufactured using a subtractive process similar to that of the second OGS array.

Neutron detectors (cold, thermal, fast neutrons)↗
DOE OSTI2024

Investigating resource-efficient neutron/gamma classification ML models targeting eFPGAs

There has been considerable interest and resulting progress in implementing machine learning (ML) models in hardware over the last several years from the particle and nuclear physics communities. A big driver has been the release of the Python package, hls4ml, which has enabled porting models specified and trained using Python ML libraries to register transfer level (RTL) code. So far, the primary end targets have been commercial field-programmable gate arrays (FPGAs) or synthesized custom blocks on application specific integrated circuits (ASICs). However, recent developments in open-source embedded FPGA (eFPGA) frameworks now provide an alternate, more flexible pathway for implementing ML models in hardware. These customized eFPGA fabrics can be integrated as part of an overall chip design. In general, the decision between a fully custom, eFPGA, or commercial FPGA ML implementation will depend on the details of the end-use application. In this work, we explored the parameter space for eFPGA implementations of fully-connected neural network (fcNN) and boosted decision tree (BDT) models using the task of neutron/gamma classification with a specific focus on resource efficiency. We used data collected using an AmBe sealed source incident on Stilbene, which was optically coupled to an OnSemi J-series silicon photomultiplier (SiPM) to generate training and test data for this study. We investigated relevant input features and the effects of bit-resolution and sampling rate as well as trade-offs in hyperparameters for both ML architectures while tracking total resource usage. The performance metric used to track model performance was the calculated neutron efficiency at a gamma leakage of 10 -3 . The results of the study will be used to aid the specification of an eFPGA fabric, which will be integrated as part of a test chip.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature

The detection of individual photons at cryogenic temperatures is of interest to many experiments searching for physics beyond the Standard Model. Silicon photomultipliers (SiPMs) are often deployed in liquid argon or liquid xenon to detect scintillation light either directly or after it has been wavelength-shifted. Maximizing the photon detection efficiency (PDE) of the SiPMs used in these experiments optimizes the sensitivity to new physics; however, the PDEs of commercial SiPMs, although well known at room temperature, are not well characterized at the cryogenic temperatures at which many experiments operate them. Here we present results from an experimental setup that measures the photon detection efficiencies of silicon photomultipliers at liquid nitrogen temperature, 77 K. Results from a KETEK PM3325-WB-D0 and a Hamamatsu S13360-3050CS silicon photomultiplier — of R&D interest to the LEGEND experiment — exhibit a decrease in photon detection efficiency greater than 20% at liquid nitrogen temperature relative to room temperature for 562 nm light.

Cryogenic detectors↗