Search NASA⌕ Search

SEARCH · Search NASA

Results for “Ultraviolet patterning”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Steps toward determination of the size and structure of the broad-line region in active galactic nuclei. II - An intensive study of NGC 5548 at optical wavelengths

A large, international program of ground-based optical spectroscopy and photometry of the variable Seyfert 1 galaxy NGC 5548 undertaken in support of an IUE monitoring campaign is described. This contribution presents the data base and describes the methods used to correct for systematic differences between spectra from different sources. Optical continuum and H-beta emission-line light curves are derived from the spectra. The behavior of the optical continuum is qualitatively the same as the behavior of the ultraviolet continuum. Cross-correlation of the ultraviolet and optical continuum measurements does not reveal any significant lag between them. The h-beta emission-line variations show the same basic pattern as seen in the continuum and ultraviolet emission lines, with H-beta lagging behind the continuum by about 20 days. This is significantly larger than the about 10 day lag deduced for Ly-alpha.

Peterson, B. M.↗
DOE OSTI2025

Bismuth-oxo Clusters for Next Generation Extreme Ultraviolet Light Photolithography

Photolithography is the primary technique used for the patterning of semiconducting materials for chip manufacturing; however, as requisite pattern dimensions and feature sizes continue to decrease, state-of-the-art lithographic methods now require the use of 13.5 nm extreme ultraviolet (EUV) light. The shift toward these higher energy wavelengths of light has resulted in a need for new single component materials, with high EUV absorption cross sections and high etch resistance. Herein, we report the exploration of Bi 9 O 7 (hfac) 13 as the first bismuth oxo cluster based EUV photoresist. It was determined this material has an exceptional EUV linear absorption coefficient (24 μm –1 ), nearly an order of magnitude larger than commercially available chemically amplified resists (CARs) (∼5 μm –1 ). Additionally, the resist was determined to be highly sensitive to EUV exposure and displayed a dose-to-gel of 10 mJ/cm 2 , undergoing ligand decomposition during exposure and cross-linking during the postexposure bake, which was supported by FTIR and residual gas analysis. In conclusion, this class of bismuth-oxo cluster resists can lead to the development of more efficient, effective and safe EUV resist materials required for next-generation photolithography.

MacKenzie, Harvey K. [Univ. of Victoria, BC (Canad↗
DOE OSTI2023

FINITE-ELEMENT DISTORED WAVE BORN APPROXIMATION FOR SURFACE SCATTERING

FE-DWBA is a software package that computes the x-ray scattering patterns of objects that locate on a surface or buried next to a surface, such as the nano-circuits and nano-patterns of the mask used in the extreme ultraviolet lithography. It can incorporate the dynamical scattering effect (photons scattered multiple times), which is predominant in surface scattering and yield high-fidelity scattering patterns. The application includes surface imaging using x-rays, and critical dimension determination for semiconductor manufacturing.

HU, MAIOQI↗
DOE OSTI2021

Chemical and structural characterization of EUV photoresists as a function of depth by standing-wave x-ray photoelectron spectroscopy

The success in the miniaturization of the electronic device constituents depends mostly on the photolithographic techniques. Recently, to achieve patterning at the sub-10-nm node, extreme ultraviolet (EUV) lithography has been introduced into high volume production. Continued scaling of EUV via increased numerical aperture to achieve nodes at 3-nm and below requires the development of fundamentally new patterning materials and new characterization methods. Current EUV-resist film thicknesses are in the 20- to 40-nm range, and further thickness reduction is required for the next generation. Therefore, interfaces become exceedingly important, and the properties of the resist film would be dominated by top and bottom interfacial effects. X-ray photoelectron spectroscopy (XPS) combined with standing-wave excitation (SW-XPS), a fairly new method in the EUV lithography field, previously had been largely applied in multilayers and superlattices for characterizing the composition and electronic structure of buried layers and interfaces as a function of depth. We applied the SW-XPS method to organic/inorganic photoresists to provide depth-selective information on their structural and chemical conditions of as a function of temperature, EUV exposure, different underlayers, and other fundamental parameters. As a first attempt, we perform an SW-XPS feasibility study on self-assembled monolayer (SAM) films after exposure to an electron beam. By SW-XPS, we determined that the interface between the Al 2 O 3 underlayer and the SAMs is smooth, with a mean roughness of about 0.2 nm. Moreover, we determined that the SAM chains are, on average, tilted by 1/430 deg off the sample normal. The SW-XPS results also suggest that the SAM is not a perfectly aligned and uniform monolayer, with some areas having thickness higher than a single monolayer. We demonstrated that SW-XPS can provide useful information on ultrathin materials with high potential for being used as a characterization method of organic/inorganic photoresists.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Transmitting and reflecting diffuser

A near-Lambertian diffuser is described which transmits and reflects ultraviolet light. An ultraviolet grade fused silica substrate is coated with vaporized fuse silica. The coating thickness is controlled, one thickness causing ultraviolet light to diffuse and another thickness causing ultraviolet light to reflect a near Lambertian pattern.

Keafer, L. S., Jr.↗
NASA NTRS1977

Transmitting and reflecting diffuser

An ultraviolet grade fused silica substrate is coated with vaporized fused silica. The coating thickness is controlled, one thickness causing ultraviolet light to diffuse and another thickness causing ultraviolet light to reflect a near Lambertian pattern.

Keafer, L. S., Jr.↗
NASA NTRS1992

Correlated hard x ray and UV variability in NGC 5548

Observations of the nucleus of NGC5548 made at 11 different epochs during May - July 1990, in low resolution mode (1000 km/s) and through large apertures (10 by 20 inches) of the International Ultraviolet Explorer (IUE) spectrographs, are discussed. The patterns of variability are considered. Figures showing the following are given: light curves of the continuum in the X-ray and UV bands, together with the light curves of the strongest emission lines; the 2 to 10 KeV X-ray flux as a function of the 1350 A continuum for the 11 epochs of simultaneous X-ray and UV observations; the cross correlation and discrete correlation of F (sub 2 to 10) with F(sub 1350). Implications of the findings are discussed.

Clavel, J.↗
NASA NTRS2003

Electrohydrodynamically patterned colloidal crystals

A method for assembling patterned crystalline arrays of colloidal particles using ultraviolet illumination of an optically-sensitive semiconducting anode while using the anode to apply an electronic field to the colloidal particles. The ultraviolet illumination increases current density, and consequently, the flow of the colloidal particles. As a result, colloidal particles can be caused to migrate from non-illuminated areas of the anode to illuminated areas of the anode. Selective illumination of the anode can also be used to permanently affix colloidal crystals to illuminated areas of the anode while not affixing them to non-illuminated areas of the anode.

Hayward, Ryan C.↗
DOE OSTI2021

Optically enhanced patternable photosensitivity via oxygen excitation

The present disclosure relates to a method for performing a three dimensional (3D) printing process. A primary light beam having a wavelength sufficient to initiate polymerization of a photoresin is generated and patterned into a patterned primary beam. The patterned primary beam is directed toward an ultraviolet (UV) or visible light sensitive photoresin to initiate polymerization of select areas of the photoresin. The photoresin is also illuminated with a secondary light beam having a wavelength of at least one of about 765 nm, 1064 nm, or 1273 nm. The secondary light beam stimulates triplet oxygen into singlet oxygen, which controls oxygen inhibition in additional areas bordering the select areas, to enable controlled polymerization inhibition in the additional areas bordering the select areas.

Hensleigh, Ryan↗
DOE OSTI2025

Molecular Layer Deposited Aluminum‐Based Hybrid Resist for High‐Resolution Nanolithography and Direct Ultra‐High Aspect Ratio Pattern Transfer

Inorganic-containing hybrid photoresists are critical for next-generation extreme ultraviolet (EUV) lithography and angstrom-era semiconductor miniaturization. However, associated conventional solution processing struggles to achieve ultrathin, uniform films with high conformality and compositional control, limiting overall patterning performance. Here, this study reports the systematic lithographic patterning characterization of an Al-based hybrid resist synthesized via vapor-phase molecular layer deposition (MLD), using the trimethylaluminum (TMA) metal precursor and the hydroquinone (HQ) aromatic organic linker. The resist supports both sub-20 nm high-resolution nanolithography and virtually infinite silicon plasma etch selectivity. Lithographic performance studied using electron beam lithography (EBL) as a proxy for EUV shows that, under an optimized process adopting post-exposure bake, the resist achieves the best resolution of 15.4 nm linewidth under stringent 1:1 line-space high-density patterning—limited only by the minimum beam size of the EBL system. The resist also shows wide dose latitude and balanced performance in resolution, roughness, and sensitivity. The infinite silicon etch selectivity, stemming from spontaneous aluminum oxyfluoride passivation layer formation, enables fabrication of micrometer-tall, 40 nm-wide silicon nanofin structures using only a ≈30 nm-thick resist layer, without no hard mask. These results highlight the potential of MLD-based hybrid resists for developing next-generation resist materials for micro/nanoelectronics manufacturing.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Photochromic Polyaphrons For Visualization Of Flow

Drops of ultraviolet-activated dyes encapsulated in liquid films reveal flow patterns. Method based on visualization material composed of polyaphrons containing photochromic dye. Polyaphrons are droplets of organic liquid encapsulated in thin layer of another liquid, which holds droplets stably by surface tension. Photochromic dye within a polyaphron acquires color temporarily after exposure to strong ultraviolet light.

Subbaraman, M. R.↗
DOE OSTI2023

Recent developments in photoresists for extreme-ultraviolet lithography

Here, this report describes recent developments and current needs in the field of high-resolution photopolymers and photomolecules briefly describing prior generation lithographic patterning materials. It subsequently concentrates on recent advances in both inorganic and polymeric materials for extreme ultraviolet (EUV) lithography. It is also part of a series of papers written in celebration of the centenary of the Polymeric Materials: Science and Engineering (PMSE) division of the American Chemical Society (ACS). PMSE has long been home to polymer chemists who have made important contributions to advances in semiconductor manufacturing as a result of PMSE's focus on polymer coatings research. While EUV lithography has been an area of research for several decades, only within the last 5 years has the combination of new light sources, EUV optics, tool advances and resist discoveries come together to transition this area from the patterning method of the future to a leading-edge manufacturing technology.

36 MATERIALS SCIENCE↗
NASA NTRS2002

Proton Aurora Dynamics in Response to the IMF and Solar Wind Variations

On May 23, 2000, proton auroras observed by IMAGE (Imager for Magnetopause to Aurora Global Exploration) FUV (Far Ultraviolet) on the dayside were very dynamic. Auroral pattern in the cusp is well correlated with Interplanetary Magnetic Field (IMF) and solar wind parameters. When IMF were northward, cusp proton aurora appeared at high latitude poleward from the auroral oval. A high-latitude proton aurora brightened after solar wind ion temperature increased and it disappeared after IMF turned southward. Under the southward IMF condition, auroral activity occurred only in the dayside auroral oval. As IMF $B_z$ reverted to northward, cusp proton aurora reappeared at high latitude. The magnetic local time of the cusp proton aurora changes with the IMF $B_y$ polarity, consistent with previous reports. These results suggest an upstream source of the high-latitude cusp proton aurora for this event. One possible explanation is that bow shock energetic ions are transported into the cusp via the high-latitude magnetic merging process to induce optical emissions in the ionosphere.

Chang, S.↗
DOE OSTI2020

Optically enhanced patternable photosensitivity via oxygen excitation

A method is disclosed for performing a three dimensional (3D) printing process. The method involves generating a primary light beam having a wavelength sufficient to initiate polymerization of a photoresin, and patterning the primary light beam into a patterned primary beam. The patterned primary beam may be directed toward an ultraviolet (UV) or visible light sensitive photoresin to initiate polymerization of select areas of the photoresin. The photoresin may be illuminated with a secondary light beam having a wavelength of about 765 nm to stimulate triplet oxygen into singlet oxygen, to thus control oxygen inhibition in additional areas bordering the select areas, to control polymerization inhibition in the additional areas bordering the select areas.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Self Assembled Monolayers for Passivated Contacts

Passivated contacts mitigate defects typically encountered due metallization of solar cells. We deposit amorphous silicon (a-Si:H) on an oxidized silicon wafer via PECVD and anneal at high temperature to crystallize into polysilicon passivated contact. One drawback is the absorption of the polysilicon between grid fingers, so removal of this material is desirable to maximize Jsc. Alternatively, interdigitated back contact cells rely on a gap between n- and p- fingers, which is commonly etched to ensure electronic isolation. We utilize a self assembled monolayer (SAM) using hexamethyldisilazane (HMDS) as a precursor to pattern and etch amorphous silicon (a-Si:H) and polysilicon without the need for photoresist. Ultraviolet light exposure oxidizes the HMDS by photocleaving the organic groups [1] of the SAM leaving a patterned SiO2. Directly soaking this in TMAH will eventually etch the SAM and the silicon, where the SiO2 serves as an etch mask. Inversely, a dilute HF dip selectively etches this SiO2 and the SAM remains. A subsequent soak in TMAH selectively etches the underlying silicon, where the SAM serves as an etch mask. Importantly, we find that the SAM can remain intact for metallization, where we measure 10 mO-cm2 specific contact resistivity on n-type polysilicon.

passivation↗
DOE OSTI2023

HD 222925: A New Opportunity to Explore the Astrophysical and Nuclear Conditions of r-process Sites

Abstract With the most trans-iron elements detected of any star outside the solar system, HD 222925 represents the most complete chemical inventory among metal-poor stars enhanced with elements made by the rapid neutron capture (“ r ”) process. As such, HD 222925 may be a new “template” for the observational r -process, where before the (much higher-metallicity) solar r -process residuals were used. In this work, we test under which conditions a single site accounts for the entire elemental r -process abundance pattern of HD 222925. We found that several of our tests—with the single exception of the black hole–neutron star merger case—challenge the single-site assumption by producing an ejecta distribution that is highly constrained, in disagreement with simulation predictions. However, we found that ejecta distributions that are more in line with simulations can be obtained under the condition that the nuclear data near the second r -process peak are changed. Therefore, for HD 222925 to be a canonical r -process template likely as a product of a single astrophysical source, the nuclear data need to be reevaluated. The new elemental abundance pattern of HD 222925—including the abundances obtained from space-based, ultraviolet (UV) data—call for a deeper understanding of both astrophysical r -process sites and nuclear data. Similar UV observations of additional r -process–enhanced stars will be required to determine whether the elemental abundance pattern of HD 222925 is indeed a canonical template (or an outlier) for the r -process at low metallicity.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Imaging plasma formation in isolated nanoparticles with ultrafast resonant scattering

We have recorded the diffraction patterns from individual xenon clusters irradiated with intense extreme ultraviolet pulses to investigate the influence of light-induced electronic changes on the scattering response. The clusters were irradiated with short wavelength pulses in the wavelength regime of different 4d inner-shell resonances of neutral and ionic xenon, resulting in distinctly different optical properties from areas in the clusters with lower or higher charge states. The data show the emergence of a transient structure with a spatial extension of tens of nanometers within the otherwise homogeneous sample. Simulations indicate that ionization and nanoplasma formation result in a light-induced outer shell in the cluster with a strongly altered refractive index. The presented resonant scattering approach enables imaging of ultrafast electron dynamics on their natural timescale.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗