A Tripler to 220 GHz Using a Back-To-Back Barrier-N-N(sup +) Varactor Diode
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Semiconductor devices, tunnel diodes, transistors, varactor diodes, vacuum tube amplifiers, triodes, klystrons, and traveling wave tubes for communication satellite output devices
Stripline varactor harmonic multiplier uses a device for positioning the varactor diode with respect to the stripline circuit to obtain series resonance. The device also reduces detuning effects, due to thermal expansion, over a wide temperature range.
This report is in three parts: 1. In the first part a user-oriented computer program for the analysis of single-ended Schottky diode mixers is described. The program is used to compute the performance of a 140-220 GHz mixer and excellent agreement with measurements at 150 and 180 GHz is obtained. A sensitivity analysis indicates the importance of various diode and mount characteristics on the mixer performance. 2. The second part of this report describes a computer program for the analysis of varactor diode multipliers. The diode may operate in either the reverse biased varactor mode or with substantial forward current flow where the conversion mechanism is predominantly resistive. In addition, a design for a varactor diode doubler, tunable over an output frequency range of 150-220 GHz, is given. The doubler has 10-20% conversion efficiency with an instantaneous bandwidth of 3%. 3. The third section of this report contains a description and analysis of i new H-plane rectangular waveguide transformer. The transformer can be made luckily and easily in split-block waveguide using a standard slitting saw. It is particularly suited for use in the millimeter-wave band, replacing conventional electroformed stepped transformers. A theoretical analysis of the transformer is given, and good agreement is obtained with measurements made at X-band. Design curves are included for transitions which have a VSWR <1.2 over a full waveguide band when the impedance ratio is as high as 4 to 1.
Frequency doubler using two-diode varactor array to obtain double output power
Phase modulator for transmission in X band provides large phase deviation that remains nearly linear with voltage over relatively wide range. Operates with low loss over wide frequency band and with stable characteristics over wide temperature range. Phase modulator contains two varactor-diode phase shifters coupled via circulators. Separate drive circuit applies modulating voltages to varactor diodes. Modulation voltages vary in accordance with input to drive circuit.
In this presentation a 2.4 GHz low profile (lambda45) tunable dipole antenna is evaluated in the presence of a human core model (HCM) body phantom. The antenna uses a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells and its performance is compared to a similar low profile antenna that uses an FSS with semiconductor varactor diodes. The measured data of the antenna demonstrate tunability from 2.2 GHz to 2.55 GHz in free space and impedance match improvement in the presence of a HCM at different distances. This antenna has smaller size, lower cost and less weight compared to the semiconductor varactor diode counterpart.
In this paper a 2.4 GHz low profile (lambda/47) tunable dipole antenna is evaluated in the presence of a human core model (HCM) body phantom. The antenna uses a frequency selective surface (FSS) with interdigital barium strontium titanate (BST) varactor-tuned unit cells and its performance is compared to a similar low profile antenna that uses an FSS with semiconductor varactor diodes. The measured data of the antenna demonstrate tunability from 2.2 GHz to 2.55 GHz in free space and impedance match improvement in the presence of a HCM at different distances. This antenna has smaller size, lower cost and less weight compared to the semiconductor varactor diode counterpart.
A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.
Modified series model for abrupt-junction varactor diode used as harmonic frequency doubler
The design and performance of a 640 GHz solid-state receiver using a fundamental planar-Schottky-diode mixer, InP Gunn diode oscillator, whisker-contacted Schottky-varactor-diode sextupler and folded-Fabry-Perot diplexer are reported.
The design and analysis of varactor diode doubler, quadrupler and cascaded doubler circuits for 320 and 640 GHz have been completed. A new approach has been employed to produce a tunerless waveguide mount with a very flexible, frequency scaleable, MMIC style multiplier circuit. The concept, design, predicted performance and measurements on some of the constituent mount elements are presented.
In semiconductor devices the speed of electrons cannot exceed certain limits. This phenomenon will affect varactor multipliers as well as other high frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, 'saturation' of the varactor output power is expected at some point. This phenomenon is discussed in some detail and shown to severely deteriorate the multiplier performance at higher frequencies. Single barrier varactors should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array, allowing for lower current densities and higher power handling.
Several tasks were active during this report period: (1) noise modulation in avalanche-diode devices; (2) schottky-barrier microwave devices; (3) intermodulation products in IMPATT diode amplifiers; (4) harmonic generation using Read-diode varactors; and (5) fabrication of GaAs Schottky-barrier IMPATT diodes.
Problems, proposed solutions, and recent results related to the development of solid-state oscillators, detectors, mixers, diode multipliers, and antennas at THz frequencies are addressed. Individual topics considered include: submillimeter heterodyne remote sensing of upper atmospheric gases, planar dipole array antenna with an elliptical lens, twin slot antenna structures integrated with microbolometer detectors for 94-GHz imaging. Also discussed are: quantum-well and quantum-barrier diodes for generating submillimeter wave power, planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths, GaAs Schottky barrier varactor diodes for submillimeter wavelength power generation, planar doped barrier devices for subharmonic mixers.
Epitaxial gallium arsenide diode junction formed in a crossed waveguide structure operates as a variable reactance harmonic generator. This varactor diode can generate power efficiently in the low-millimeter wavelength.
Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers with 1600 Schottky-barrier varactor diodes. Shorted diodes are detected with a liquid-crystal technique, and the bad diodes are removed with an ultrasonic probe. A small-aperture reflectometer that uses wavefront division interference was developed to measure the reflection coefficient of the grids. A phase shift of 70 deg with a 7-dB loss was obtained at 93 GHz when the bias on the diode grid was changed from -3 V to 1 V. A simple transmission-line grid model, together with the measured low-frequency parameters for the diodes, was shown to predict the measured performance over the entire capacitive bias range of the diodes, as well as over the complete reactive tuning range provided by a reflector behind the grid, and over a wide range of frequencies from 33 GHz to 141 GHz. This shows that the transmission-line model and the measured low-frequency diode parameters can be used to design an electronic beam-steering array and to predict its performance. An electronic beam-steering array made of a pair of grids using state-of-the-art diodes with 5-ohm series resistances would have a loss of 1.4 dB at 90 GHz.