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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Nonvolatile random access memory

A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.

Wu, Jiin-Chuan↗
NASA NTRS2008

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

Phillips, Thomas A.↗
DOE OSTI2025

Detector Performance on Surface Passivation and its Long-Term Stability

Surface passivation is an ideal technique to prepare the surfaces of fabrication Cadmium Zinc Telluride (CZT) and related semiconductor devices such as Cadmium Zinc Tellurium Selenide (CZTS). Surface passivation techniques reduce the effects of aging in the detector [1]. Surface performance effects on material performance can result in fluctuations in energy resolution over time (such as periods of a year or more). The long-term stability of surface passivation with Potassium Hydroxide (KOH) was observed with measurement of 1) current (nano Amp) vs voltage (V) and 2) spectral response and energy resolution throughout the years. Three CZTS detector samples of M2, M3, and M4 were examined using a photomultiplier tube and voltage amplifier. The Bridgman technique is used to grow the CZTS used in this study.

Johnson, Kirsten [Morgan State Univ., Baltimore, M↗
NASA NTRS1970

Active resistance capacitance filter design

Filters, formed by combinations of distributed RC elements with positive-feedback voltage amplifiers, provide transfer functions similar to those the heavier LC filters ordinarily employ. They also provide signal amplification.

Kerwin, W. J.↗
NASA NTRS1971

Multiloop distributed RC active networks

Distributed RC active two-port network and voltage amplifier provides advantage over lumped elements in that second-order bandpass function is obtained with single distributed passive element. Incorporating positive and negative feedback loops provides improvement in Q, sensitivity, and gain-Q sensitivity product compared to single-loop networks.

Kerwin, W. J.↗
NASA NTRS1980

An ultrasonic plethysmograph for space flight applications

The development of an ultrasonic plethysmograph based on the transit time measurement principle is reported, which meets the space-imposed requirements for evaluating cardiovascular deconditioning. It consists of a pulse generator, pulse receiver amplifier, voltage comparator, synchronous pulse generator, elapsed time counter, and transmit and receive piezoelectric crystals resonant at 2 MHz and of 3 mm diameter. The transit time for an ultrasonic pulse to propagate across a limb cross section is computed in a digital fashion using a 32 MHz clock, and resolution is 0.049 mm with the range being approximately 200 mm. Experimental results regarding dynamic system response were found comparable in both accuracy and sensitivity to those of a Whitney strain gage using a 50 torr venous occlusion.

Bhagat, P. K.↗
NASA NTRS1985

Design of Cryocoolers for Microwatt Superconducting Devices

The primary applications of the cryocoolers are for cooling various Josephson devices such as SQUID magnetometers and amplifiers, voltage standards, and microwave mixers and detectors. The common feature of these devices is their extremely low inherent bias power requirement, of the order of 10/1 W per junction. This provides the possibility of designing compact, low-power cryocoolers for these applications. Several concepts were explored and a number of laboratory model cryocoolers were built. These include low-power nonmagnetic regenerative machines of the Stirling or Gifford-McMahon type, three or four-stage Joule-Thomson machines, liquid-helium dewars with integral small cryocoolers to reduce the evaporation rate, and liquid-helium dewars with integral continuously or intermittently operated small helium liquefiers to permit operation of cryogenic devices for indefinite time periods.

Zimmerman, J. E.↗
NASA NTRS1991

Switched-Capacitor Voltage Multiplier

Dc-to-dc power converter multiplies input supply potential by factor of nearly 40. Design does not make use of transformers or inductors but effects voltage boost-up by capacitive energy transfer. Circuit primarily made up of banks of capacitors, connected by network of integrated-circuit relays. Converter functionally linear voltage amplifier with fixed gain figure. Bipolar in operation. Output fully floating, and excellent dc isolation between input and output terminals.

Sridharan, Govind↗
NASA NTRS1992

Differential Current Source

Circuit acts as voltage-controlled current source having high-impedance floating differential output. Maintains commanded current in load, regardless of changes in load impedance and regardless of any common-mode voltages on load. Provides constant excitation current to germanium resistance thermometer or other transducer, output voltage of which sensed by differential voltage amplifier.

Sutton, John F.↗
NASA NTRS1994

An active antenna for ELF magnetic fields

The work of Nikola Tesla, especially that directed toward world-wide electrical energy distribution via excitation of the earth-ionosphere cavity resonances, has stimulated interest in the study of these resonances. Not only are they important for their potential use in the transmission of intelligence and electrical power, they are important because they are an integral part of our natural environment. This paper describes the design of a sensitive, untuned, low noise active antenna which is uniquely suited to modern earth-ionosphere cavity resonance measurements employing fast-Fourier transform techniques for near-real-time data analysis. It capitalizes on a little known field-antenna interaction mechanism. Recently, the authors made preliminary measurements of the magnetic fields in the earth-ionosphere cavity. During the course of this study, the problem of designing an optimized ELF magnetic field sensor presented itself. The sensor would have to be small, light weight (for portable use), and capable of detecting the 5-50 Hz picoTesla-level signals generated by the natural excitations of the earth-ionosphere cavity resonances. A review of the literature revealed that past researchers had employed very large search coils, both tuned and untuned. Hill and Bostick, for example, used coils of 30,000 turns wound on high permeability cores of 1.83 m length, weighing 40 kg. Tuned coils are unsuitable for modern fast-Fourier transform data analysis techniques which require a broad spectrum input. 'Untuned' coils connected to high input impedance voltage amplifiers exhibit resonant responses at the resonant frequency determined by the coil inductance and the coil distributed winding capacitance. Also, considered as antennas, they have effective areas equal only to their geometrical areas.

Sutton, John F.↗
NASA NTRS2003

Power Electronics Being Developed for Deep Space Cryogenic Applications

Electronic circuits and systems designed for deep space missions need to operate reliably and efficiently in harsh environments that include very low temperatures. Spacecraft that operate in such cold environments carry a large number of heaters so that the ambient temperature for the onboard electronics remains near 20 C. Electronics that can operate at cryogenic temperatures will simplify system design and reduce system size and weight by eliminating the heaters and their associated structures. As a result, system development and launch cost will be reduced. At the NASA Glenn Research Center, an ongoing program is focusing on the development of power electronics geared for deep space low-temperature environments. The research and development efforts include electrical components design, circuit design and construction, and system integration and demonstration at cryogenic temperatures. Investigations are being carried out on circuits and systems that are targeted for use in NASA missions where low temperatures will be encountered: devices such as ceramic and tantalum capacitors, metal film resistors, semiconductor switches, magnetics, and integrated circuits including dc/dc converters, operational amplifiers, voltage references, and motor controllers. Test activities cover a wide range of device and circuit performance under simple as well as complex test conditions, such as multistress and thermal cycling. The effect of low-temperature conditions on the switching characteristics of an advanced silicon-on-insulator field effect transistor is shown. For gate voltages (VGS) below 2.6 V, drain currents at -190 C are lower than drain currents at room temperature (20 C).

Patterson, Richard L.↗
NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗
NASA NTRS2006

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C

While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

Neudeck, Philip G.↗
NASA NTRS1967

Series transistors isolate amplifier from flyback voltage

Circuit enables high sawtooth currents to be passed through a deflection coil and isolate the coil driving amplifier from the flyback voltage. It incorporates a switch consisting of transistors in series with the driving amplifier and deflection coil. The switch disconnects the deflection coil from the amplifier during the retrace time.

Banks, W.↗
NASA NTRS2004

Real Time Calibration Method for Signal Conditioning Amplifiers

A signal conditioning amplifier receives an input signal from an input such as a transducer. The signal is amplified and processed through an analog to digital converter and sent to a processor. The processor estimates the input signal provided by the transducer to the amplifier via a multiplexer. The estimated input signal is provided as a calibration voltage to the amplifier immediately following the receipt of the amplified input signal. The calibration voltage is amplified by the amplifier and provided to the processor as an amplified calibration voltage. The amplified calibration voltage is compared to the amplified input signal, and if a significant error exists, the gain and/or offset of the amplifier may be adjusted as necessary.

Pedro J Medelius↗
NASA NTRS1971

High current compensation network for dc logarithmic amplifiers

Circuit voltage output is reduced by voltage equivalent to ampere resistance drop of nonlogarithmic resistances of practical diodes; therefore, output is same as circuit using ideal diode. Circuit applies to meter and electronic recorder movements, and improves performance of radiation detectors and several microbiological monitoring devices

Wilson, J. H.↗