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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Time-resolved ion energy distribution functions during a HiPIMS discharge with cathode voltage reversal

Abstract The effect on the ion energy distribution function (IEDF) of plasma produced during a high-power impulse magnetron sputtering (HiPIMS) discharge as the pulse conditions are varied is reported. Pressure was varied from 0.67–2.00 Pa (5–15 mTorr), positive kick pulses up to 200 V tested with a constant 4 μ s delay between negative and positive cycles. The results demonstrate that the resulting plasma during the positive cathode voltage reversal is the result of expansion through the largely neutral gas species between the end of the magnetic trap of the target and the workpiece. The plasma potential rises on similar time scale with the evolution of a narrow peak in the IEDF close to the applied bias. The peak of the distribution function remains narrow close to the applied bias irrespective of pulse length, and with only slight pressure dependence. One exception discovered is that the IEDF contains a broad high energy tail early in the kick pulse due to acceleration of ions present beyond the trap from the main pulse separate from the ionization front that follows.

Physics↗

Matrix converter operating in current control mode using feed forward signals

A matrix converter system having a current control mode operation is provided. The system includes a matrix converter having a switching matrix. The matrix converter is coupled at its low-voltage side to a generator and at its output load side to a load. A controller having a pulse width modulation (PWM) control circuit is configured to control the matrix converter via its switching matrix to increase energy within the internal inductances of the generator when the switching matrix causes a short circuit. A feed forward calculator is configured to calculate a feed forward output phase angle. The feed forward output phase angle is an estimation of an angle between an output current vector and an output voltage vector that represent feedback signals of current and voltage output by the matrix converter. The angular position of the voltage output vector is adjusted as a function of the feed forward output phase angle to align angular position or phase angle of the voltage output vector that represents the voltage output with a selected angular position or phase angle.

42 ENGINEERING↗

Observation of time-dependent internal charge amplification in a planar germanium detector at cryogenic temperature

For the first time, time-dependent internal charge amplification through impact ionization has been observed in a planar germanium (Ge) detector operated at cryogenic temperature. In a time period of 30 and 45 min after applying a bias voltage, the charge energy corresponding to a baseline of the 59.54 keVγ rays from a 241 Am source is amplified for a short period of time and then decreases back to the baseline. The amplification of charge energy depends strongly on the applied positive bias voltage with drifting holes across the detector. No such phenomenon is visible with drifting electrons across the detector. We find that the observed charge amplification is dictated by the impact ionization of charged states, which has a strong correlation with impurity level and applied electric field. We analyze the dominant physics mechanisms that are responsible for the creation and the impact ionization of charged states. Our analysis suggests that the appropriate level of impurity in a Ge detector can enhance charge yield through the impact ionization of charged states to achieve extremely low-energy detection threshold (< 10 meV) for MeV-scale dark matter searches if the charge amplification can be stabilized.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Manipulating the insulator–metal transition through tip-induced hydrogenation

Manipulating the insulator–metal transition in strongly correlated materials has attracted a broad range of research activity due to its promising applications in, for example, memories, electrochromic windows and optical modulators. Electric-field-controlled hydrogenation using ionic liquids and solid electrolytes is a useful strategy to obtain the insulator–metal transition with corresponding electron filling, but faces technical challenges for miniaturization due to the complicated device architecture. Here, in this work, we demonstrate reversible electric-field control of nanoscale hydrogenation into VO 2 with a tunable insulator–metal transition using a scanning probe. The Pt-coated probe serves as an efficient catalyst to split hydrogen molecules, while the positive-biased voltage accelerates hydrogen ions between the tip and sample surface to facilitate their incorporation, leading to non-volatile transformation from insulating VO 2 into conducting H x VO 2 . Remarkably, a negative-biased voltage triggers dehydrogenation to restore the insulating VO 2 . This work demonstrates a local and reversible electric-field-controlled insulator–metal transition through hydrogen evolution and presents a versatile pathway to exploit multiple functional devices at the nanoscale.

36 MATERIALS SCIENCE↗

Controlled removal of hydrogen atoms from H-terminated silicon surfaces

The controlled formation of dangling bond structures on a H-terminated silicon surface is the first step in an atomically precise method of fabrication of silicon quantum electronic devices. An ultrahigh vacuum scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from a Si(100)-2x1:H surface by injecting electrons with the sample held at a positive bias voltage. The authors propose a lithography method that allows the STM to operate under negative bias imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative bias voltage to deliver the required energy for hydrogen removal. The resulting current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM’s feedback control loop. The authors show that the chance of tip-sample crash during the lithography process is reduced by employing this method. They also demonstrate that this approach offers a significant potential for controlled and precise removal of H atoms from a H-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

42 ENGINEERING↗

Big Data Synchrophasor Monitoring and Analytics for Resiliency Tracking (BDSMART)

This report contains key findings from a project titled Big Data Synchrophasor Monitoring and Analytics for Resiliency Tracking (BDSMART), which was carried out through a collaborative effort of a team of researchers from Texas A&M Engineering Experiment Station, Temple University, and Quanta Technology, LLC. The in-kind support came from OSIsoft (acquired by AVEVA), which provided their PI Historian software to demonstrate the use case of streaming PMU data. The first section of the report describes the project goals and objectives related to the development of Machine Learning (ML) models capable of detecting and classifying events by processing phasor measurements captured in the field by Phasor Measurement Units (PMUs). The data for this study was contributed by the utilities/ISOs from the Western and Eastern interconnects and ERCOT, further referred to as Interconnect B (IC B), Interconnect A (IC A), and Interconnect C (IC C), respectively. The approach that the BDSMART Research Team proposed and the key research tasks defined by the team are outlined in this section. The next section describes the technical approach. We first discuss the data constraints related to the PMU measurements and data interpretation constraints imposed by the data contributors. They provided neither the topological information of the grid nor PMU placement locations and captured recorded data at very few locations in the system with the reporting rate of either 30 or 60 fps. The recordings are mostly positive sequence voltage, frequency, and ROCOF, and in some limited cases, three-phase voltages and currents. We then reflect on the bad data issues that stem from poor recording practices and vague definitions of the PMU status bits to supposedly be used for bad data identification. Finally, the data discovery points to imprecise time stamps with incomplete event start/end time, as well as inconsistent and incomplete event labeling, which combined make the implementation of the data models using supervising learning quite challenging. Following the data discovery study, we hypothesize that because the IC B data has the most complete labels, we should focus our model development on that data and then test it on data from other interconnects. We also define the common metrics used to evaluate the results from the ML algorithm tests. We concluded this section by summarizing the common ML models we used and explaining how we implemented and tested them. The issues from this section are expanded in the Training Dataset Report from this project. The final section of this report deals with the accomplishments and conclusions. As the accomplishments, we formulate the problem we are solving and what is achieved by solving the problem. We then reflect on each of the analytics tools we developed and point out the performance of each tool when applied to solving the mentioned problems. We reference this work for further details to the papers we published on each tool. In the conclusions, we give recommendations on how to improve future PMU recording practices to facilitate the ML algorithm implementation and guidance for the future standardization work aimed at clarifying the ambiguities associated with the PMU status bits. We finally list future tasks that can bring about further improvements in the proposed algorithms. The issues from this section are expanded in the Training, and Test Dataset Report filed at the project completion date.

97 MATHEMATICS AND COMPUTING↗

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

42 ENGINEERING↗

Module-Level Solutions For Degradation by Ionization Damage

After years of improving module efficiency while targeting mean degradation rates of 0.5 to 0.6 %/y for crystalline silicon technology, there is much evidence that the degradation rates are now increasing significantly. Contributing factors include:Radiation damage (UV-Light Induced Degradation): Trina solar: -4.5%/y degradation rate in Singapore, DOE National Laboratory Regional Test Centers showed degradation of -1% < r < -2%/y in crystalline silicon modules, Jinko Solar: -4% < r < -7% efficiency loss from 540 MJ/m-2 of UV-A light, ISFH: 15% relative power loss during of 1.8 GJ/m-2 UV exposure, attributed to H+. Electrical bias from positive system voltage (e.g., +1000 V, +1500 V) can drive ions and metallization through the encapsulation, NREL: Ion transport can affect the cell passivation, resulting in power loss of 5% to 40% in p-PERC+ (bifacial), NREL: Damage at cell rear with up to 17% power at cell fronts in n-PERT modules. Delamination can also occur due to cell surface reactions driven by light and bias.

module efficiency↗

System and method for voltage-based real-time micro-object position control with the aid of a digital computer

The system and method described allow for real-time control over positioning of a micro-object. A movement of at least one micro-object suspended in a medium can be induced by a generation of one or more forces by electrodes proximate to the micro-object. Prior to inducing the movement, a simulation is used to develop a model describing a parameter of an interaction between each of the electrodes and the micro-object. A function describing the forces generated by an electrode and an extent of the movement induced due to the forces is generated using the model. The function is used to design closed loop policy control scheme for moving the micro-object towards a desired position. The position of the micro-object is tracked and taken into account when generating voltage patterns in the scheme.

Matei, Ion↗

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe 3- x GeTe 2 and the ferroelectric In 2 Se 3 . It is observed that gate voltages applied to the Fe 3- x GeTe 2 /In 2 Se 3 heterostructure device modulate the magnetic properties of Fe 3- x GeTe 2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In 2 Se 3 and Fe 3- x GeTe 2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe 3- x GeTe 2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Predictive Coordinated and Cooperative Voltage Control for Systems With High Penetration of PV

In this paper, we propose a predictive coordinated and cooperative voltage control method in a power distribution system with high penetration of photovoltaic (PV) units. First, an integrated coordinated voltage control of voltage regulators (VRs) tap positions and cooperative distributed control of the reactive power output from PV inverters are used to maintain system voltages within an appropriate bandwidth. Next, solar power forecasting is applied to predict voltage changes, which are used to set the VR tap positions and capacitor switch status to prevent large voltage fluctuations. The fine tuning of voltage adjustment is then achieved by cooperative control of PV inverters to maintain a uniform voltage profile across the system. The proposed method is tested on a modified IEEE 123-node test feeder with high penetration of PVs using real measurement data and compared with the base case. Simulation results demonstrate the effectiveness of the integrated voltage control, as well as the enhancement from the predictive control through solar power forecasting-enabled voltage change estimates. Comparison to previous work in the literature shows significant improvement in terms of voltage deviation and reduction in excessive tap changes.

14 SOLAR ENERGY↗

ION PRODUCTION AND MITIGATION IN DC HIGH-VOLTAGE PHOTO-GUNS

One of the biggest obstacles to operating a GaAs polarized electron source with a long charge lifetime is the mitigation of ion back-bombardment. Several techniques exist to either clear ions from the accelerator or to mitigate ion damage of the photocathode. Predicting the effectiveness of these techniques requires sophisticated simulation models of electron impact ionization within the photo-gun. In this work, the effectiveness of applying a positive anode bias voltage to mitigate ion damage and increase the charge lifetime of the GaAs photocath?ode was studied over three run periods at the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab (JLab). The charge lifetime with the biased anode configuration was 1.80±0.51 times longer than the lifetime of the usual grounded anode configuration. Sim?ulations of ionization within the CEBAF photo-gun and adjacent beamline were made using General Particle Tracer (GPT) and a new C++ custom element to predict and explain the substantial improvement in charge lifetime. The experimental results and the development of the ionization custom element, with its use in simulations of ion back-bombardment with the biased anode, are described in detail.

Yoskowitz, Joshua↗

Boost of the Bio-memristor Performance for Artificial Electronic Synapses by Surface Reconstruction

Biomaterial-based memristors (bio-memristors) are often adopted to emulate biological synapse functions and applied to construct neural computing networks in brain-inspired chip systems. However, the randomness of conductive filament formation in bio-memristors inhibits their switching performance by causing the dispersion of the device-switching parameters. In this case, a facile porous silk fibroin (p-SF) memristor was obtained through a protein surface reconstruction strategy, in which the size of the hole can be adjusted by the density of hybrid nanoseeds. Here, the porous SF memristors exhibit greatly enhanced electrical characteristics, including uniform I-V cycles, centralized distribution of the switching voltages, and both high and low resistances, compared to devices without pores. The results of three-dimensional (3D) simulations based on classical density functional theory (cDFT) suggest that the reconstructed pores in the SF layers guide the formation and fracture of Ag filaments under an electric field and enhance the overall conductivity by separating Ag + ion and electron diffusion pathways. Ag + ions are predicted to preferentially diffuse through pores, whereas electrons diffuse through the SF network. Interestingly, the device conductance can be bidirectionally modulated gradually by positive and negative voltages, can faithfully simulate short-term and long-term plasticity, and can even realize the triplet-spike-timing-dependent plasticity (triplet-STDP) rule, which can be used for pattern recognition in biological systems. The simulation results reveal that a memristor network of this type has an accuracy of ~95.78% in memory learning and the capability of pattern learning. This work provides a facile technology route to improve the performance of bionic-material memristors.

36 MATERIALS SCIENCE↗

Multiagent-Based Dynamic Voltage Support of Power Converters During Fault Ride-Through

Reference point of applicability (RPA) is a predefined point in a distribution network that performance requirements shall apply. As RPA is not directly controlled by a dedicated distributed energy resource (DER), it requires an aggregate response of multiple DERs over a complex meshed network. Here, this article presents a multiagent-based distributed dynamic voltage support (DDVS) method for coordinated aggregate response of multiple DER units to support RPA voltage profile during and after fault ride-through. DDVS implements a multiagent-based leader target tracking scheme with velocity matching and flock centering features to avoid uncoordinated current injections of cooperative DERs. The DDVS is an event-based approach based on RPA requirements. Two-dimensional voltage support objective is handled: 1) coordinated positive sequence current injection for voltage magnitude boosting and 2) coordinated negative sequence current injection for unbalance voltage mitigation. The results demonstrate that the proposed DDVS algorithm addresses emerging coordinated DVS requirement of DERs.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Development of copper thiolate organometallic compound as thermal sensitive coating for energy storage system safety

Safety and reliability are primary concerns for the deployment of lithium-ion batteries, especially in electric vehicles (EV) and larger-scale energy storage systems (ESS). Current technology in battery management systems (BMS) includes cell voltage monitoring and positioning temperature sensors in selected locations. For a system with hundreds to thousands of individual batteries, single-point temperature monitoring is inadequate to detect hot spots and cell overheating, which could lead to thermal runaway. Here, we have developed a temperature-sensitive copper-thiol compound that can be directly coated onto battery pouch foils to enable early detection of thermal runaway. Upon reaching specific temperatures, this compound releases a sulfur-containing detectable gas, which can be identified using chemically specific gas sensors to trigger an early warning signal. Such a signal propagate through air offers broad signal coverage and enables a more comprehensive approach to large-area temperature monitoring. The Cu-ethanethiol coating is designed to release volatile gases when the substrate surface temperature exceeds 70 °C, with continuous outgassing as the temperature increases. The compound is composed of Cu, S, Cl, hydrocarbons and trace amounts of oxygen. Upon heating, the oxidation state of Cu(I) transitions to Cu (II), accompanied by gas release. Thermogravimetric analysis coupled with mass spectrometry correlated well with the onset of gas release temperature and emission of sulfur-containing volatile gases. Additionally, an acrylic overcoat is applied to enhance the adhesion of the thermally sensitive compound film to the battery pouch foil. This coating is expected to offer an additional safety layer for ESS, alerting possible thermal runaway events before a failure occurs, thereby allowing sufficient time to implement a mitigation plan.

Early warning systems↗

Predictive and Cooperative Voltage Control with Probabilistic Load and Solar Generation Forecasting

This paper proposes predictive cooperative voltage control method in a power system with high penetration of photovoltaic (PV) units. Cooperative distributed control of the reactive power output of PV inverters is coordinated with operation of voltage regulators (VRs) to maintain system voltages within an appropriate bandwidth. Probabilistic forecasting of the solar power generation and the loads is applied to estimate voltage changes which, in turn, are used to set the VR tap positions for preventing large voltage fluctuations with the lowest risk considering the voltage distribution estimation. The fine tuning of voltage adjustment is achieved by cooperative control of PV inverters to maintain a uniform voltage profile across the system. The proposed method is tested on the modified IEEE 123-node test feeder with high PV penetration using real insolation data and with constant loads replaced by several different load profiles. Simulation results demonstrate the effectiveness of the coordinated approach for voltage control with cooperative PV and predictive VR controls taking into account probabilistic load and solar power forecasts.

Cooperative Control↗

Understanding Chemo-Mechanical Stability of Protonic Ceramic Cells Through Electronic Conduction in the BaCe 0.7 Zr 0.1 Y 0.1 Yb 0.1 O 3-δ Electrolyte

BaCe 0.7 Zr 0.1 Y 0.1 Yb 0.1 O 3-δ (BCZYYb) is a promising ceramic electrolyte for reversible protonic ceramic cells. It is reported that BCZYYb-based cells show excellent long-term durability, particularly in the electrolysis mode, in contrast to the cells based on the conventional electrolyte yttria-stabilized zirconia. In this study, we investigate the chemo-mechanical stability behavior (a low tendency of delamination) of the BCZYYb-based protonic ceramic cells in terms of local electronic conduction in the electrolyte. The local electronic conductivity of the BCZYYb electrolyte is determined using Pt-probe-embedded cells near each electrode interface. The BCZYYb electrolyte exhibits sufficient p-type conductivity (∼10 −3 S cm −1 ) near the oxygen electrode (corresponding p O 2 : 5.27–21 × 10 −2 atm) and n-type conductivity (∼10 −4 S cm −1 ) near the hydrogen electrode (corresponding p O 2 : 0.99–1.30 × 10 −24 atm) at 600 °C. A standard cell is prepared and tested over long-term in the fuel cell (at positive and negative voltages) and electrolysis modes. The cell exhibits stable performance without delamination or cracks in both operating modes, owing to local electronic conduction.

Electrochemistry↗

Modeling for the phased injector upgrade for 12 GeV CEBAF

As a follow on to the 12 GeV upgrade to the Continuous Electron Beam Accelerator Facility, the front end of the DC photo-gun-based injector has gone through a phased upgrade. The first phase focused on the beamline between the gun and the RF chopper system, and the second phase addresses the beamline after the RF chopper system including replacing the capture section and quarter cryomodule with a new booster module containing a 2-cell and 7-cell cavity string. Throughout the design process, we maintained and developed three models, one for the existing injector and one for each of the upgrade phases. With these models, we evaluated proposed hardware upgrades, evaluated and determined optimized beamline element positions, developed buncher voltage requirements, and settings for optimal injector running. In this paper, we will describe the models and results from these various studies and provide a brief summary of Phase 1 commissioning.

Kazimi, R.↗