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Results for “Work function”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Thermionic work function of /Cs/ZnO

The collector electrode of a thermionic converter requires a material having a low thermionic work function and chemical stability in a Cs atmosphere in the 800-K range. This letter reports that ZnO with an adsorbed Cs film meets these requirements. The work function is approximately 1.3 eV. Various methods of preparing the ZnO film are described as well as an experiment in which Cs was replaced by K.

Sommer, A. H.↗
NASA NTRS1972

Theoretical determination of cesiated work functions

A computer program based on the theoretical work of Gyftopoulos, Steiner, and Levine on bimetallic systems and using a modified version of Wilkins' SIMCON subroutine SURFAS was written for the Univac 1108. This program, WFGSL, accepts the operating conditions and the physical parameters pertinent to the substrate and adsorbate, and outputs the field-free work function, electron current (Richardson equation), ion current (Saha equation), and fractional substrate coverage by the adsorbate. A brief description of the theory is presented together with a program description and listing. An application of the program to a bimetallic system of cesium (adsorbate) and rhenium (substrate) is also described.

Szejn, R. M.↗
DOE OSTI2026

Strain-stabilized interfacial polarization tunes work function over 1 eV in RuO 2 /TiO 2 heterostructures

Interfacial polarization – charge accumulation at the heterointerface – is a well-established tool in semiconductors, but its influence in metals remains unexplored. Here, we demonstrate that interfacial polarization can robustly modulate surface work function in metallic rutile RuO 2 layers in epitaxial RuO 2 /TiO 2 heterostructures grown by hybrid molecular beam epitaxy. Using multislice electron ptychography, we directly visualize polar displacements of transition metal ions relative to oxygen octahedra near the interface, despite the conductive nature of RuO 2 . This interfacial polarization enables over 1 eV modulation of the RuO 2 work function, controlled by small thickness variations (2-3 nm), as measured by Kelvin probe force microscopy, with a critical thickness of ~4 nm – corresponding to the transition from fully-strained to relaxed film. These results establish interfacial polarization as a powerful route to control electronic properties in metals and have implications for designing tunable electronic, catalytic, and quantum devices through interfacial control in polar metallic systems.

Electronic properties and materials↗