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Results for “Zero Voltage Switching (ZVS)”

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34 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A 75 kVA Intelligent Power Stages (IPS) Unit Design for Future Grid-interface Application

The demand for grid-interface converter with flexible dc bus is driven by the fast development of energy storage system (ESS), electric vehicle (EV) charging system, and versatile residential load. This paper first proposes a two-stage intelligent power stage (IPS) unit for future grid-interface applications. To achieve zero common-mode (CM) voltage emissions, step-up and step-down voltage gain, a 3-level four-switch buck-boost (3-L FSBB) dc-dc converter is adopted with fully zero voltage switching (ZVS). In one IPS unit, an advanced fiberoptic communication with sub-nanosecond synchronization is developed for different enhanced gate drivers. Moreover, an enhanced gate driver integrated current and voltage sensors is designed for monitoring and diagnostics. To achieve a whole low-profile design, three 12 oz heavy copper planar ac inductors are designed and implemented. Finally, a 75 kVA IPS unit was built to verify both the thermal and electrical design.

Cao, Yuliang↗
DOE OSTI2026

A Dual-Active-Bridge Converter Employing a Variable Inductor Without an Auxiliary Circuit

This paper proposes a dual active bridge (DAB) converter employing a variable inductor (VI) without an auxiliary circuit. Unlike conventional VI-based designs that require an external DC bias circuit, the proposed DAB utilizes the input DC current itself as the bias source, enabling automatic inductance variation with load conditions. The inductance naturally increases at low power and decreases at high power, effectively extending the zero voltage switching (ZVS) range and reducing circulating current, respectively. The VI was experimentally implemented and characterized to obtain its inductance-current profile, which was then integrated into a PLECS model of the DAB converter for circuit and thermal simulations. Simulation results confirm that the proposed auxiliary-free VI-DAB converter achieves a wider ZVS range and lower circulating current compared with a conventional fixed-inductor DAB converter. By realizing a variable inductor without any auxiliary bias circuitry, the proposed approach maintains soft switching and reduces reactive current losses across a wide load range, leading to improved efficiency and simplified implementation.

Jo, Cheolhui [ORNL] (ORCID:0000000322692434)↗
DOE OSTI2024

Analysis and Control of a Three-Port Converter with High-Frequency AC Link for Hybrid Unmanned/Autonomous Aerial Vehicles

In this study, a three-port resonant converter with a high-frequency isolation link for hybrid unmanned/autonomous aerial vehicle (UAV/AAV) applications is analyzed. The rectified engine-generator set output supplies the first input ports while the other is connected to a battery energy storage system. Input ports consist of half-bridge high-frequency inverters, whereas output port utilizes a semi-bridgeless active rectifier. This rectifier is formed by replacing rectifier low-side diodes with active switching devices. A phase-shift duty-cycle control is implemented for switching signals to regulate the power share and flow between ports. The proposed control system implemented achieves zero voltage switching (ZVS), reduces switching losses, and minimum current flow optimization ensures regulation in a wide range of output power. Compared to the existing bidirectional pulse width modulation (PWM) converters, the proposed system decreases the number of power conversion stages and provides centralized control without needing communications between the ports. The proposed control technique operating in closed-loop control achieves the power flow between ports under various load conditions. Finally, theoretical analysis demonstrates the proposed converter’s viability and laboratory experimental validations at 500 W full power.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗
DOE OSTI2021

New Modulation and Impact of Transformer Leakage Inductance on Current-Source Solid-State Transformer

This article presents a novel modulation scheme for device voltage stress mitigation and comprehensive analysis of the impact of transformer leakage inductance in a current-source solid-state transformer (SST). Different from dual active bridge (DAB) SST, the operation of the current-source SST is similar to that of a flyback converter. The device bridge on only one side of the transformer is active to store energy into or release energy from the magnetizing inductance which acts as a current-source dc link. Such flyback operation with reverse-blocking switches can lead to additional device voltage stress and incomplete zero-voltage switching (ZVS) on the current-source soft-switching solid-state transformer (S4T) under conventional modulation. A new modulation scheme is proposed to address this issue. Moreover, different from the DAB, the leakage inductance of the medium-frequency transformer (MFT) in the S4T is a parasitic element similar to that in a matrix SST and can cause additional device voltage stress. Though the resonant capacitors, originally added to achieve ZVS, can absorb and recycle the leakage energy in the S4T, these capacitors need to be increased with larger leakage inductances to limit the voltage stress. However, large resonant capacitors can result in more lost duty cycles and reduced efficiency. The impact of such leakage inductance on device voltage stress is analyzed comprehensively, which is critical to guide future research and design of the S4T. Experimental results from S4T prototypes for DC-DC, multiport AC-DC, and AC-AC conversion with 1:1 and 4:1 MFT comprehensively verify the proposed concepts. Lastly, a case study of a three-phase AC-AC S4T over a power range from 1 kVA to 100 kVA each module reveals that the MFT leakage inductance should be less than 1% of the magnetizing inductance for safe operation.

14 SOLAR ENERGY↗
NASA NTRS2004

Class E/F switching power amplifiers

The present invention discloses a new family of switching amplifier classes called class E/F amplifiers. These amplifiers are generally characterized by their use of the zero-voltage-switching (ZVS) phase correction technique to eliminate of the loss normally associated with the inherent capacitance of the switching device as utilized in class-E amplifiers, together with a load network for improved voltage and current wave-shaping by presenting class-F.sup.-1 impedances at selected overtones and class-E impedances at the remaining overtones. The present invention discloses a several topologies and specific circuit implementations for achieving such performance.

Hajimiri, Seyed-Ali↗
DOE OSTI2022

Device Voltage Stress from Ground Leakage Current in Medium-Voltage Solid-State Transformer

Grounding related issues are critical for safe and reliable operation of solid-state transformer (SST) in medium-voltage (MV) applications, e.g., solar photovoltaic and energy storage integration, date center, electric vehicle fast charging, etc. This article presents for the first time the issue of additional device voltage stress due to grounding-loop current in current-source SST, using the soft-switching solid-state transformer (S4T) as an example. The S4T features single-stage isolated AC-AC, AC-DC, or DC-DC conversion with full-range ZVS, derived from flyback converter or current-source converter (CSC). However, the flyback operation for CSC-based SST means that magnetizing current flows through the reverse-blocking devices on only one side of the medium-frequency transformer (MFT) at a time. Then, the voltages across the devices, especially those on the other side of the MFT, can be influenced by parasitic current. A parasitic model of a modular S4T (M-S4T) prototype is developed from direct measurements and datasheets. Using the developed parasitic model and equivalent circuits, the causes of the voltage stress are analyzed. A voltage-stress mitigation scheme of connecting additional grounding capacitors is proposed. Damping resistors are also installed to damp out the grounding-loop resonance. A robust parameter design of the proposed scheme is given. The existence of the voltage stress issue and the effectiveness of the proposed scheme are verified experimentally on an MV SiC M-S4T prototype with inherent parameter variations among the five modules in the prototype. Here, both single-module and stacked-module operation are demonstrated during steady state and dynamic conditions up to 4 kV peak.

42 ENGINEERING↗
DOE OSTI2021

SiC-Based 5-kV Universal Modular Soft-Switching Solid-State Transformer (M-S4T) for Medium-Voltage DC Microgrids and Distribution Grids

Medium-voltage DC (MVDC) grids are attractive for electric aircraft and ship power systems, battery energy storage system (BESS), fast charging electric vehicle (EV), etc. Such EV or BESS applications need isolated bidirectional MVDC to LVDC or LVAC converters. However, the existing Si-based solutions cannot fulfill the requirements of a high-efficiency and robust converter for MVDC grids. This paper presents a 5 kV SiC-based universal modular solid-state transformer (SST). This universal current-source SST can interface either a LVAC or LVDC grid with a MVDC grid in single-stage power conversion, while the conventional dual active bridge (DAB) converter needs an additional inverter. The proposed SST module using 3.3 kV SiC MOSFETs and diodes is bidirectional and can serve as a building block in series or parallel for higher-voltage higher-power systems. The topology of each module is based on the soft-switching solid-state transformer (S4T) with reduced conduction loss, which features reduced EMI through controlled dv/dt, and high efficiency with full-range ZVS for main devices and ZCS for auxiliary devices. Operation principle of the modular S4T (M-S4T), capacitor voltage balancing control between the cascaded modules, design of components including a medium-voltage (MV) medium-frequency transformer (MFT) to realize a 50 kVA 5 kV DC to 600 V DC or 480 V AC M-S4T are presented. Importantly, the MV MFT prototype achieves very low leakage inductance (0.13%) and 15 kV insulation with coaxial cables and nanocrystalline cores. Here, the proposed universal modular SST is compared against the DAB solution and verified with DC-DC and DC-AC simulation and 4 kV experimental results. Significantly, the MV experimental results of a modular DC transformer with each module at MVDC are rarely covered in the literature and reported for the first time.

14 SOLAR ENERGY↗
DOE OSTI2020

Improved Frequency-Domain Steady-State Modeling of the Dual-Active-Bridge Converter Considering Finite ZVS Transition Time Effects

This article presents an improved analytical modeling (IAM) approach for the dual-active-bridge (DAB) converter in the frequency-domain. Specifically, finite transition times are incorporated into the improved modeling that are significant in DAB converters operated at high frequency. The IAM approach is first motivated by comparing traditional frequency-domain modeling against realistic simulation results in LTspice. Next, the IAM approach is mathematically developed in an iterative fashion, where the conventional frequency-domain approach is used as the initialization of the operational behavior of the converter. Subsequent iterations of the IAM algorithm incorporate finite rise- and falltimes of device output capacitances based on detailed switching behavior analyses, which may considerably perturb the desired modulation parameters (i.e., phase shift and zero states). While the initially proposed IAM approach demonstrates advantages over ideal modeling, it is still shown to exhibit errors when applied to device transitions with significant nonlinearity in parasitic output capacitance. To account for this, a three-slope approximation to the switching transition is then motivated and developed, which enables significantly improved steady-state prediction accuracy. Simulation and experimental results confirm unacceptable inaccuracies associated with the conventional frequency-domain modeling across a wide range of operating conditions, alongside enhanced accuracy provided by the proposed modeling approach.

14 SOLAR ENERGY↗
DOE OSTI2023

Isolated Single-stage Three-phase AC/DC Converter using Bidirectional Switches

The advent of the SiC Bidirectional FET (BiDFET), a monolithic 1.2 kV bidirectional switch, has rendered the single-stage three-phase AC/DC converter topology a promising approach for implementing AC/DC converters. This topology, which integrates a full-bridge converter with a single-phase to three-phase matrix converter via a high-frequency transformer, is particularly suitable for applications requiring galvanic isolation, buck-boost functionality, and bidirectional power flow. The single-stage design eliminates the need for bulky and unreliable electrolytic capacitors, and utilizes a single magnetic component for power transfer. In the matrix converter, bidirectional switches, which were traditionally implemented using combinations of multiple semiconductor devices such as MOSFETs, IGBTs, and diodes, can now be realized using the single-chip solution, BiDFET. This advancement leads to a lower switch count, compact converter implementation, with lower inductance commutation cells, thereby enhancing the overall efficiency and compactness of the system. The paper presents a unified model of the converter, considering all control parameters, including the duty cycles and phase shift of transformer voltages. Detailed expressions for power transfer, transformer currents, and currents at AC and DC ports are provided. Additionally, the paper outlines the conditions necessary for soft-switching of all switches and the commutation schemes required for the practical implementation of the matrix converter modulation scheme. A hardware prototype of a 10 kW, 480 VRMS, LL/ 800 V AC/DC system has been developed, and experimental results are presented to demonstrate its performance.

BiDFET↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

1 kV 150 A Bidirectional Isolated DC/DC Converter With Full Range ZVS For Charger Application

This paper focusses on the development of a bidirectional DC/DC converter based on dual active bridge (DAB) converter for 1 kV class fast charger applications. A novel modulation technique is proposed to achieve zero voltage switching across the entire operating range of a vehicle battery system. The topology includes a tap changer to support multiple class of vehicles. The full range ZVS operation will allow high efficiency operation even at light load, reduced dv/dt to improve transformer insulation lifetime and mitigate EMI impact. A 1 kV class, 150 A prototype was developed to validate the proposed concepts.

Kandula, Prasad↗
NASA NTRS2001

Radiation Effects on DC-DC Converters

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Zhang, De-Xin↗
NASA NTRS1993

Design of a ZVS PWM inverter for a brushless DC motor in an EMA application

The Component Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently investigating the use of electromechanical actuators for use in space transportation applications such as Thrust Vector Control (TVC). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 Vdc. This paper will discuss the design and implementation of a zero-voltage-switched PWM (Pulse Width Modulation) inverter which operates from a 270 Vdc source at currents up to 100 A.

Bell, J. Brett↗
DOE OSTI2023

Zero Voltage Switching AC-DC Converter Based on Zero State Modulation (ZSM)

In this paper, a half-bridge building block that can achieve soft switching across the complete operating range while operating under fixed frequency is proposed. In addition, dead-beat model predictive controls to control the same are also proposed. The proposed converter, referred to as zero-state modulated (ZSM) converter, uses a zero state, enabled by a small auxiliary switch, to achieve soft-switching. The approach allows lower switching loss, controlled dv/dt, small filter inductor, fixed frequency operation allowing interleaving to reduce filter capacitor. A single half-bridge building block can used to realize a ZVS DC-DC converter or multiple of these building blocks can be used to achieve soft switching 1-phase or 3-phase AC-DC converters.

Kandula, Prasad↗
DOE OSTI2022

7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection

This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.

14 SOLAR ENERGY↗