Chemical Profiling of Light-Emitting Porous Si and SiGe Using Transmission Electron Microscopy
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New class of Si-based superlattices - Alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) alloys
Superlattices consisting of alternating layers of crystalline Si and porous amorphous Si(1-x)Ge(x) have been fabricated. This is accomplished by first growing a Si/Si(0.7)Ge(0.3) superlattice by molecular beam epitaxy, followed by Ar-ion milling to form mesa structures, and finally by immersion in HF:HNO3:H2O. This solution creates a porous structure similar to that created by anodic etching, and a high selectivity is observed for the conversion of the alloy layers relative to the Si layers. The degree of selectivity is found to depend on alloy-layer thickness and strain. Superlattices have been fabricated from 1-micron wide mesas with Si(0.7)Ge(0.3) layers fully converted to 5-nm thick porous amorphous material.
Fathauer, R. W.↗
Durable Advanced Flexible Reusable Surface Insulation
An improved flexible blanket includes a nickel-based alloy foil layer brazed to a nickel-based alloy fabric layer. The fabric layer is stitched to an underlying ceramic insulation layer.
Rasky, Daniel↗
Nonlinear Convection in Mushy Layers
When alloys solidify in a gravitational field there are complex interactions between solidification and natural, buoyancy-driven convection that can alter the composition and impair the structure of the solid product. The particular focus of this project has been the compositional convection within mushy layers that occurs in situations where the lighter component of the alloy is rejected into the melt during solidification by cooling from below. The linear stability of such a situation was previously described and has been further elucidated in a number of published articles. Here we describe some recent developments in the study of nonlinear evolution of convection in mushy layers.
Worster, M. Grae↗
Predicting Fatigue Lives Of Metal-Coated Nickel-Alloy Parts
LAYER computer program performs thermomechanical-fatigue-life prediction for coated, nickel-based anisotropic materials. Intended to provide gas-turbine-airfoil designers with means to accurately project service lifetimes. Written in FORTRAN 77.
Mcgaw, Michael A.↗
Characterization of multilayer GaAs/AlGaAs transistor structures by variable angle spectroscopic ellipsometry
Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 'barrier' and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.
Merkel, Kenneth G.↗
Reaction layer formation at the graphite/copper-chromium alloy interface
Sessile drop tests were used to obtain information about copper chromium alloys that suitably wet graphite. Characterization of graphite/copper-chromium alloy interfaces subjected to elevated temperatures were conducted using scanning electron micrography, energy dispersive spectroscopy, auger electron spectroscopy, and x ray diffraction analyses. These analyses indicate that during sessile drop tests conducted at 1130 C for one hour, copper alloys containing greater than 0.98 percent chromium form continuous reaction layers of approximately 10 micron thickness. The reaction layers adhere to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 degrees or less. X ray diffraction results indicate that the reaction layer is chromium carbide. The kinetics of reaction layer formation were modelled in terms of bulk diffusion mechanisms. Reaction layer thickness is controlled initially by the diffusion of Cr out of Cu alloy and later by the diffusion of C through chromium carbide.
Devincent, Sandra M.↗
Reaction layer formation at the graphite/copper-chromium alloy interface
Sessile drop tests were used to obtain information about copper chromium alloys that suitably wet graphite. Characterization of graphite/copper-chromium alloy interfaces subjected to elevated temperatures were conducted using scanning electron micrography, energy dispersive spectroscopy, Auger electron spectroscopy, and X-ray diffraction analyses. These analyses indicate that during sessile drop tests conducted at 1130 C for one hour, copper alloys containing greater than 0.98 percent chromium form continuous reaction layers of approximately 10 micron thickness. The reaction layers adhere to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 degrees or less. X-ray diffraction results indicate that the reaction layer is chromium carbide. The kinetics of reaction layer formation were modelled in terms of bulk diffusion mechanisms. Reaction layer thickness is controlled initially by the diffusion of Cr out of Cu alloy and later by the diffusion of C through chromium carbide.
Devincent, Sandra M.↗
The influence of gas-saturated layers on the strength and plastic properties of titanium alloys
Effect of gas saturated layers on strength and plastic properties of titanium alloys
NOTCH STRENGTH↗
Systems and Methods for Fabricating Objects Including Amorphous Metal Using Techniques Akin to Additive Manufacturing
Systems and methods in accordance with embodiments of the invention fabricate objects including amorphous metals using techniques akin to additive manufacturing. In one embodiment, a method of fabricating an object that includes an amorphous metal includes: applying a first layer of molten metallic alloy to a surface; cooling the first layer of molten metallic alloy such that it solidifies and thereby forms a first layer including amorphous metal; subsequently applying at least one layer of molten metallic alloy onto a layer including amorphous metal; cooling each subsequently applied layer of molten metallic alloy such that it solidifies and thereby forms a layer including amorphous metal prior to the application of any adjacent layer of molten metallic alloy; where the aggregate of the solidified layers including amorphous metal forms a desired shape in the object to be fabricated; and removing at least the first layer including amorphous metal from the surface.
Hofmann, Douglas↗
Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures
An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.
Alterovitz, Samuel A.↗
nBn Infrared Detector Containing Graded Absorption Layer
It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.
Gunapala, Sarath D.↗
Coating with overlay metallic-cermet alloy systems
A base layer of an oxide dispersed, metallic alloy (cermet) is arc plasma sprayed onto a substrate, such as a turbine blade, vane, or the like, which is subjected to high temperature use. A top layer of an oxidation, hot corrosion, erosion resistant alloy of nickel, cobalt, or iron is then arc plasma sprayed onto the base layer. A heat treatment is used to improve the bonding. The base layer serves as an inhibitor to interdiffusion between the protective top layer and the substrate. Otherwise, the 10 protective top layer would rapidly interact detrimentally with the substrate and degrade by spalling of the protective oxides formed on the outer surface at elevated temperatures.
Gedwill, M. A.↗
Proximity effect between superconductivity and normal metals
The SNS junctions were limited to having gold (n) layers of less than 3000 A in order to avoid having the tin (S) films become normal under the influence of the signal current in the gold. The gold layer was alloyed with 10 wt% copper to shorten its electronic mean free path, increasing the tin layer critical current while decreasing the Josephson critical current. It was also found that a previously reported anomalous voltage shift in the presence of I2 is caused by the tin being driven normal. After deposition, the samples were transferred to a conventional cryostat to provide better thermal contact to the films. This reduction of heating in the films produced more linear I-V characteristics and a change in the constant voltage current gain. In order to achieve power gain the SNS device must be operated at lower temperatures were the effects of fluctuations are less and be constructed such that the input resistance is much reduced and the dynamic output resistance increased. A geometry is proposed using a more sophisticated evaporator.
Meissner, H.↗
Formation and breakdown of a protective layer of chromium sesquioxide on L-605 alloy at 1100 C
The formation and breakdown of a protective layer of Cr2O3 on the cobalt-base alloy L-605 during oxidation at 1100 C was evaluated. Deformed surface layers, pressure, and moisture were variables. Increasing surface deformation, decreasing pressure, and decreasing moisture increased time to breakdown. A model was deduced. The breakdown of the Cr2O3 layer was caused by a combination of growth stresses and volatilization. Breakdown exposed a chromium-depleted alloy to air, resulting in very rapid oxidation, which continued until consumption of the depletion zone was complete.
Lowell, C. E.↗
The interaction of small metal particles with refractory oxide supports
Islands and continuous layers of Pd were grown in UHV on Mo and MoO subtrates. As-deposited Pd islands and layers exhibited bulk Pd adsorption properties for CO when the Pd had been deposited at RT and at thicknesses exceeding 3 ML. However, CO adsorption was drastically reduced upon annealing. This deactivation was interpreted in terms of substrate/support interaction involving the diffusion of substrate species toward the Pd surface, using AES, TPD, and work function measurement techniques. A study of the growth and annealing behavior of Pd on Mo(110) was made for thicknesses up to 12 monolayers and substrate temperatures up to 1300K, using AES, XPS, LEED, and work function measurements. At low tempertures Pd formed a monolayer without alloying. In thick layers (12 ML) annealed about 700 K, Mo diffusion into the Pd layer and alloying were noted. Such layers remained continuous up to 1100 K. Thinner Pd layers were less stable and started coalescing upon annealing to as little as 550 K. Significant changes in Pd Auger peak shape, as well as shifts of Pd core levels, were observed during layer growth and annealing.
Park, C.↗
Long-term thermal degradation and alloying constituent effects on five boron/aluminum composites
Thermal exposure effects on the properties of five boron/aluminum composite systems were experimentally investigated. The composite systems were 49 volume percent boron fibers (203 micron diameter) in aluminum-alloy matrices 1100 Al, 2024 Al, 3003 Al, 5052 Al, and 6061 Al. Specimens were thermally exposed up to 10,000 hours at 500 K and 590 K, up to 500 hours at 730 K, and up to 10,000 hours at 500 K and 590 K, up to 500 hours at 730 K, and up to 2000 thermal cycles between 200 K and 590 K. Composite longitudinal and transverse tensile strengths, longitudinal compression strength, and in-plane shear strength were determined. None of the systems was severely degraded by exposure at 590 K. The best performing system was B-2024 Al. Effects of matrix alloys on degradation mechanisms were experimentally investigated. Composite specimens and individual fibers were metallurgically analyzed with a scanning electron microscope and an electron microprobe to determine failure characteristics, chemical element distribution, and reaction layer morphology. Alloying constituents were found to be affect the composite degradation mechanisms as follows: alloys containing iron, but without manganese as a stabilizer, caused increased low-temperature degradation; alloys containing magnesium, iron, or manganese caused increased degradation; and alloys containing copper caused increased fiber strength.
Olsen, G. C.↗
Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 C
The surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.
Chen, Liang-Yu↗