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NASA NTRS2013

A Hybrid Fiber/Solid-State Regenerative Amplifier with Tunable Pulse Widths for Satellite Laser Ranging

A fiber/solid-state hybrid seeded regenerative amplifier, capable of achieving high output energy with tunable pulse widths, has been developed for satellite laser ranging applications. The regenerative amplifier cavity uses a pair of Nd:YAG zigzag slabs oriented orthogonally to one another in order to make thermal lensing effects symmetrical and simplify optical correction schemes. The seed laser used is a fiber-coupled 1,064-nm narrowband (<0.02 nm) diode laser that is discretely driven in a new short-pulsed mode, enabling continuously tunable seed pulse widths in the 0.2-to-0.4-ns range. The amplifier gain unit consists of a pair of Brewster-cut 6-bounce zigzag Nd:YAG laser slabs, oriented 90deg relative to each other in the amplifier head. This arrangement creates a net-symmetrical thermal lens effect (an opposing singleaxis effect in each slab), and makes thermo-optical corrections simple by optimizing the curvature of the nearest cavity mirror. Each slab is pumped by a single 120-W, pulsed 808-nm laser diode array. In this configuration, the average pump beam distribution in the slabs had a 1-D Gaussian shape, which matches the estimated cavity mode size. A half-wave plate between the slabs reduces losses from Fresnel reflections due to the orthogonal slabs Brewster-cut end faces. Successful "temporal" seeding of the regenerative amplifier cavity results in a cavity Q-switch pulse envelope segmenting into shorter pulses, each having the width of the input seed, and having a uniform temporal separation corresponding to the cavity round-trip time of approx. =10 ns. The pulse energy is allowed to build on successive passes in the regenerative amplifier cavity until a maximum is reached, (when cavity gains and losses are equal), after which the pulse is electro- optically switched out on the next round trip The overall gain of the amplifier is approx. =82 dB (or a factor of 1.26 million). After directing the amplified output through a LBO frequency doubling crystal, approx. = 2.1 W of 532-nm output (>1 mJ) was measured. This corresponds to a nonlinear conversion efficiency of >60%. Furthermore, by pulse pumping this system, a single pulse per laser shot can be created for the SLR (satellite laser ranging) measurement, and this can be ejected into the instrument. This is operated at the precise frequency needed by the measurement, as opposed to commercial short-pulsed, mode-locked systems that need to operate in a continuous fashion, or CW (continuous wave), and create pulses at many MHz. Therefore, this design does not need to throw away or dump 99% of the laser energy to produce what is required; this system can be far smaller, more efficient, cheaper, and readily deployed in the field when packaged efficiently. Finally, by producing custom diode seed pulses electronically, two major advantages over commercial systems are realized: First, this pulse shape is customizable and not affected by the cavity length or gain of the amplifier cavity, and second, it can produce adjustable (selectable) pulse widths by simply adding multiple seed diodes and coupling each into commercial, low-cost fiber-optic combiners.

Coyle, Barry↗

NASA NTRS1989

Direct solar-pumped iodine laser amplifier

This semiannual progress report covers the period from September 1, 1988 to February 28, 1989 under NASA grant NAG-1-441 entitled, Direct Solar-Pumped Iodine Laser Amplifier. During this period, the research effort was concentrated on the solar pumped master oscillator power amplifier (MOPA) system using n-C3F7I. In the experimental work, the amplification measurement was conducted to identify the optimum conditions for amplification of the center's Vortek solar simulator pumped iodine laser amplifier. A modeling effort was also pursued to explain the experimental results in the theoretical work. The amplification measurement of the solar simulator pumped iodine laser amplifier is the first amplification experiment on the continuously pumped amplifier. The small signal amplification of 5 was achieved for the triple pass geometry of the 15 cm long solar simulator pumped amplifier at the n-C3F7I pressure of 20 torr, at the flow velocity of 6 m/sec and at the pumping intensity of 1500 solar constants. The XeCl laser pumped iodine laser oscillator, which was developed in the previous research, was employed as the master oscillator for the amplification measurement. In the theoretical work, the rate equations of the amplifier was established and the small signal amplification was calculated for the solar simulator pumped iodine laser amplifier. The amplification calculated from the kinetic equations with the previously measured rate coefficients reveals very large disagreement with experimental measurement. Moreover, the optimum condition predicted by the kinetic equation is quite discrepant with that measured by experiment. This fact indicates the necessity of study in the measurement of rate coefficients of the continuously pumped iodine laser system.

Han, Kwang S.↗

NASA NTRS1994

High power diode laser Master Oscillator-Power Amplifier (MOPA)

High power multiple quantum well AlGaAs diode laser master oscillator - power amplifier (MOPA) systems were examined both experimentally and theoretically. For two pass operation, it was found that powers in excess of 0.3 W per 100 micrometers of facet length were achievable while maintaining diffraction-limited beam quality. Internal electrical-to-optical conversion efficiencies as high as 25 percent were observed at an internal amplifier gain of 9 dB. Theoretical modeling of multiple quantum well amplifiers was done using appropriate rate equations and a heuristic model of the carrier density dependent gain. The model gave a qualitative agreement with the experimental results. In addition, the model allowed exploration of a wider design space for the amplifiers. The model predicted that internal electrical-to-optical conversion efficiencies in excess of 50 percent should be achievable with careful system design. The model predicted that no global optimum design exists, but gain, efficiency, and optical confinement (coupling efficiency) can be mutually adjusted to meet a specific system requirement. A three quantum well, low optical confinement amplifier was fabricated using molecular beam epitaxial growth. Coherent beam combining of two high power amplifiers injected from a common master oscillator was also examined. Coherent beam combining with an efficiency of 93 percent resulted in a single beam having diffraction-limited characteristics. This beam combining efficiency is a world record result for such a system. Interferometric observations of the output of the amplifier indicated that spatial mode matching was a significant factor in the less than perfect beam combining. Finally, the system issues of arrays of amplifiers in a coherent beam combining system were investigated. Based upon experimentally observed parameters coherent beam combining could result in a megawatt-scale coherent beam with a 10 percent electrical-to-optical conversion efficiency.

Andrews, John R.↗

NASA NTRS1988

Ku-band high efficiency GaAs MMIC power amplifiers

The development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.

Tserng, H. Q.↗

NASA NTRS1996

Optical amplifiers for coherent lidar

We examine application of optical amplification to coherent lidar for the case of a weak return signal (a number of quanta of the return optical field close to unity). We consider the option that has been explored to date, namely, incorporation of an optical amplifier operated in a linear manner located after reception of the signal and immediately prior to heterodyning and photodetection. We also consider alternative strategies where the coherent interaction, the nonlinear processes, and the amplification are not necessarily constrained to occur in the manner investigated to date. We include the complications that occur because of mechanisms that occur at the level of a few, or one, quantum excitation. Two factors combine in the work to date that limit the value of the approach. These are: (1) the weak signal tends to require operation of the amplifier in the linear regime where the important advantages of nonlinear optical processing are not accessed, (2) the linear optical amplifier has a -3dB noise figure (SN(out)/SN(in)) that necessarily degrades the signal. Some improvement is gained because the gain provided by the optical amplifier can be used to overcome losses in the heterodyned process and photodetection. The result, however, is that introduction of an optical amplifier in a well optimized coherent lidar system results in, at best, a modest improvement in signal to noise. Some improvement may also be realized on incorporating more optical components in a coherent lidar system for purely practical reasons. For example, more compact, lighter weight, components, more robust alignment, or more rapid processing may be gained. We further find that there remain a number of potentially valuable, but unexplored options offered both by the rapidly expanding base of optical technology and the recent investigation of novel nonlinear coherent interference phenomena occurring at the single quantum excitation level. Key findings are: (1) insertion of linear optical amplifiers in well optimized conventional lidar systems offers modest improvements, at best, (2) the practical advantages of optical amplifiers, especially fiber amplifiers, such as ease of alignment, compactness, efficiency, lightweight, etc., warrant further investigation for coherent lidar, (3) the possibility of more fully optical lidar systems should be explored, (4) advantages gained by use of coherent interference of optical fields at the level of one, or a few, signal quanta should be explored, (5) amplification without inversion, population trapping, and use of electromagnetic induced transparency warrant investigation in connection with coherent lidar, (6) these new findings are probably more applicable to earth related NASA work, although applications to deep space should not be excluded, and (7) our own work in the Ultrafast Laboratory at UAH along some of the above lines of investigation, may be useful.

Fork, Richard↗

NASA NTRS1998

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Pinsukanjana, Paul R.↗

NASA NTRS2008

Ferroelectric Field-Effect Transistor Differential Amplifier Circuit Analysis

There has been considerable research investigating the Ferroelectric Field-Effect Transistor (FeFET) in memory circuits. However, very little research has been performed in applying the FeFET to analog circuits. This paper investigates the use of FeFETs in a common analog circuit, the differential amplifier. The two input Metal-Oxide-Semiconductor (MOS) transistors in a general MOS differential amplifier circuit are replaced with FeFETs. Resistors are used in place of the other three MOS transistors. The FeFET model used in the analysis has been previously reported and was based on experimental device data. Because of the FeFET hysteresis, the FeFET differential amplifier has four different operating modes depending on whether the FeFETs are positively or negatively polarized. The FeFET differential amplifier operation in the different modes was analyzed by calculating the amplifier voltage transfer and gain characteristics shown in figures 2 through 5. Comparisons were made between the FeFET differential amplifier and the standard MOS differential amplifier. Possible applications and benefits of the FeFET differential amplifier are discussed.

Phillips, Thomas A.↗

NASA NTRS2004

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

large-area electronics↗

NASA NTRS1984

Low noise tuned amplifier

A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge configuration. The bandpass amplifier may be operated with a signal injected into the gate terminal of the field effect transistor and the signal output taken from the output terminal of the operational amplifier. The operational amplifier stage appears as an inductive reactance, capacitive reactance and negative resistance at the non-inverting input of the operational amplifier, all of which appear in parallel with the resistive load of the field effect transistor.

Kleinberg, L. L.↗

NASA NTRS1984

K-band FET amplifier for satellite downlink

State-of-the-art performance is demonstrated with solid-state amplifiers in K-band. The amplifier provides 8.2 watts of power with 39 dB gain over a frequency band of 1.4 GHz. Nonlinearity analyses of solid-state amplifiers suggest that system performance can be improved significantly by using an FET amplifier. Preliminary investigations reveal that the solid-state amplifiers can be space-qualified and can be expected to replace the TWTA in many communication links in the near future. It is pointed out that with improvements in device technology, the power, bandwidth and efficiency of solid-state amplifiers using FETs can be further improved. With FETs operating at a junction temperature of less than 125 C, solid-state amplifiers are inherently reliable, indicating a ten-year mean time to failure.

Goel, J.↗

NASA NTRS1985

Direct solar-pumped iodine laser amplifier

This semiannual progress report covers the period from April 1, 1985 to Sept. 30, 1985 under NASA grant NAS1-441 entitled direct solar pumped iodine laser amplifier. During this period the parametric studies of the iodine laser oscillator pumped by a Vortek simulator was carried out before the amplifier studies. The amplifier studies are postponed to the extended period following completion of the parametric studies. In addition, the kinetic modeling of a solar pumped iodine laser amplifier, and the experimental work for a solar pumped dye laser amplifier are in progress. This report contains three parts: (1) the radiation characteristics of solar simulator and the parametric characteristics of photodissociation iodine laser continuously pumped by a Vortek solar simulator; (2) kinetic modeling of a solar pumped iodine laser amplifier; and (3) the study of the dye laser amplifier pumped by a Tamarack solar simulator.

Han, K. S.↗

NASA NTRS1992

A 1-W, 30-ghz, CPW Amplifier for ACTS Small Terminal Uplink

The progress is described of the development of a 1 W, 30 GHz, coplanar waveguide (CPW) amplifier for the Advanced Communication Technology Satellite (ACTS)Small Terminal Uplink. The amplifier is based on Texas Instruments' monolithic microwave integrated circuit (MMIC) amplifiers; a three stage, low power amplifier, and a single stage, high power amplifier. The amplifiers have a power output of 190 mW and 0.710 W, gain of 23 and 4.2 dB, and efficiencies of 30.2 and 24 percent for the three stage and one stage amplifiers, respectively. The chips are to be combined via a CPW power divider/combiner circuit to yield the desired 1 W of output power.

Taub, Susan R.↗

NASA NTRS1992

A 1-W, 30-GHz, CPW amplifier for ACTS small terminal uplink

The progress to date of the development of a 1-W, 30-GHz, coplanar waveguide (CPW) amplifier for the Advanced Communication Technology Satellite (ACTS) Small Terminal Uplink is described. The amplifier is based on Texas Instruments' monolithic microwave integrated circuit (MMIC) amplifiers; a three-stage, low-power amplifier and a single stage, high-power amplifier. The amplifiers have a power output of 190 mW and 0.710 W, gain of 23 and 4.2 dB, and efficiencies of 30.2 and 24 percent for the three-stage and one-stage amplifiers, respectively. The chips are to be combined via a CPW power divider/combiner circuit to yield the desired 1 W of output power.

Taub, Susan R.↗

NASA NTRS1994

Universal signal conditioning amplifier

A state-of-the-art instrumentation amplifier capable of being used with most types of transducers has been developed at the Kennedy Space Center. This Universal Signal Conditioning Amplifier (USCA) can eliminate costly measurement setup item and troubleshooting, improve system reliability and provide more accurate data than conventional amplifiers. The USCA can configure itself for maximum resolution and accuracy based on information read from a RAM chip attached to each transducer. Excitation voltages or current are also automatically configured. The amplifier uses both analog and digital state-of-the-art technology with analog-to-digital conversion performed in the early stages in order to minimize errors introduced by offset and gain drifts in the analog components. A dynamic temperature compensation scheme has been designed to achieve and maintain 12-bit accuracy of the amplifier from 0 to 70 C. The digital signal processing section allows the implementation of digital filters up to 511th order. The amplifier can also perform real-time linearizations up to fourth order while processing data at a rate of 23.438 kS/s. Both digital and analog outputs are available from the amplifier.

Medelius, Pedro J.↗

NASA NTRS2005

High-Efficiency Microwave Power Amplifier

A high-efficiency power amplifier that operates in the S band (frequencies of the order of a few gigahertz) utilizes transistors operating under class-D bias and excitation conditions. Class-D operation has been utilized at lower frequencies, but, until now, has not been exploited in the S band. Nominally, in class D operation, a transistor is switched rapidly between "on" and "off" states so that at any given instant, it sustains either high current or high voltage, but not both at the same time. In the ideal case of zero "on" resistance, infinite "off" resistance, zero inductance and capacitance, and perfect switching, the output signal would be a perfect square wave. Relative to the traditional classes A, B, and C of amplifier operation, class D offers the potential to achieve greater power efficiency. In addition, relative to class-A amplifiers, class-D amplifiers are less likely to go into oscillation. In order to design this amplifier, it was necessary to derive mathematical models of microwave power transistors for incorporation into a larger mathematical model for computational simulation of the operation of a class-D microwave amplifier. The design incorporates state-of-the-art switching techniques applicable only in the microwave frequency range. Another major novel feature is a transmission-line power splitter/combiner designed with the help of phasing techniques to enable an approximation of a square-wave signal (which is inherently a wideband signal) to propagate through what would, if designed in a more traditional manner, behave as a more severely band-limited device (see figure). The amplifier includes an input, a driver, and a final stage. Each stage contains a pair of GaAs-based field-effect transistors biased in class D. The input signal can range from -10 to +10 dBm into a 50-ohm load. The table summarizes the performances of the three stages

Sims, Williams H.↗

DOE OSTI2024

Multi-amplifier Sensing Charge-coupled Devices for Next Generation Spectroscopy

We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal, photon-limited imaging. The MAS CCD is designed to reach sub-electron readout noise by repeatedly measuring charge through a line of amplifiers during the serial transfer shifts. Using synchronized readout electronics based on the Dark Energy Spectroscopic Instrument CCD controller, we report a read noise of 1.03 e$^{−}$ rms pix$^{−1}$ at a speed of 26 μs pix$^{−1}$ with a single-sample readout scheme where charge in a pixel is measured only once for each output stage. At these operating parameters, we find the amplifier-to-amplifier charge transfer efficiency (ACTE) to be >0.9995 at low counts for all amplifiers but one for which the ACTE is 0.997. This charge transfer efficiency falls above 50,000 electrons for the read-noise optimized voltage configuration we chose for the serial clocks and gates. The amplifier linearity across a broad dynamic range from ∼300 to 35,000 e$^{−}$ was also measured to be ±2.5%. We describe key operating parameters to optimize on these characteristics and describe the specific applications for which the MAS CCD may be a suitable detector candidate.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS1971

Electronic amplifiers: A compilation

Several types of amplifiers and amplifier systems are considered. These include preamplifiers, high power amplifiers, buffer and isolation amplifiers, amplifier circuits, and general purpose amplifiers.

Source record↗

NASA NTRS1972

Intermodulation characteristics of X-band IMPATT amplifiers.

Measurement of the intermodulation products produced when two equal amplitude signals are applied to the input of an X-band IMPATT diode amplifier. A Si p(+)nn(+) IMPATT diode was operated in a double-slug-tuned reflection amplifier circuit that was tuned to provide 20 dB of small-signal gain at 9.340 GHz. The intermodulation tests consist of measurements of the magnitudes and frequencies of the amplifier output signals as a function of the input signal drive levels and frequency separations. The gain and single-frequency characteristics of the amplifier were also measured and are used along with the theoretical device and circuit admittance characteristics as a basis for explanation of the intermodulation results. A low-frequency dominance mechanism is found to exist in which the low-frequency signals are amplified more than the high-frequency signals. This mechanism becomes more significant as the amplifier drive level is increased.

Trew, R. J.↗