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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Indium antimonide crystal growth experiment M562

It was established that ideal diffusion controlled steady state conditions, never accomplished on earth, were achieved during the growth of Te-doped InSb crystals in Skylab. Surface tension effects led to nonwetting conditions under which free surface solidification took place in confined geometry. It was further found that, under forced contact conditions, surface tension effects led to the formation of surface ridges (not previously observed on earth) which isolated the growth system from its container. In addition, it was possible, for the first time, to identify unambiguously: the origin of segregation discontinuities associated with facet growth, the mode of nucleation and propagation of rotational twin boundaries, and the specific effect of mechanical-shock perturbations on segregation. The results obtained prove the advantageous conditions provided by outer space. Thus, fundamental data on solidification thought to be unattainable because of gravity-induced interference on earth are now within reach.

Gatos, H. C.↗

Low-gravity homogenization and solidification of aluminum antimonide

The III-V semiconducting compound AlSb shows promise as a highly efficient solar cell material, but it has not been commercially exploited because of difficulties in compound synthesis. Liquid state homogenization and solidification of AlSb were carried out in the Apollo-Soyuz Test Project Experiment MA-044 in the hope that compositional homogeneity would be improved by negating the large density difference between the two constituents. Post-flight analysis and comparative characterization of the space-processed and ground-processed samples indicate that there are major homogeneity improvements in the low-gravity solidified material.

Ang, C.-Y.↗

Optimizing indium antimonide (InSb) detectors for low background operation

The various noise sources that affect InSb detectors (and similar voltaic devices) are discussed and calculated. Methods are given for measuring detector resistance, photon loading, detector and amplifier capacitance, amplifier frequency response, amplifier noise, and quantum efficiency. A photovoltaic InSb detector with increased sensitivity in the 1 to 5.6 mu region is dicussed.

Treffers, R. R.↗

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗

Gravitational influences on the liquid-state homogenization and solidification of aluminum antimonide

Typical commercial or laboratory-prepared samples of polycrystalline AlSb contain microstructural inhomogeneities of Al- or Sb-rich phases in addition to the primary AlSb grains. The paper reports on gravitational influences, such as density-driven convection or sedimentation, that cause microscopic phase separation and nonequilibrium conditions to exist in earth-based melts of AlSb. A triple-cavity electric furnace is used to homogenize the multiphase AlSb samples in space and on earth. A comparative characterization of identically processed low- and one-gravity samples of commercial AlSb reveals major improvements in the homogeneity of the low-gravity homogenized material.

Ang, C.-Y.↗

Advanced indium antimonide monolithic charge coupled infrared imaging arrays

The continued process development of SiO2 insulators for use in advanced InSb monolithic charge coupled infrared imaging arrays is described. Specific investigations into the use of plasma enhanced chemical vapor deposited (PECVD) SiO2 as a gate insulator for InSb charge coupled devices is discussed, as are investigations of other chemical vapor deposited SiO2 materials.

Koch, T. L.↗

Astronomical camera using a high-performance indium antimonide linear array

The development and current status of InSb line arrays for astronomy are reviewed. Instrument concepts are currently being developed for an infrared instrument for NASA's Space Telescope which would use such detectors for both spectroscopy and imaging. Preliminary performance measurements are given for a simple pushbroom camera, using a 128-element line array, designed for operation on the 24-inch Cassegrain telescope at the JPL Table Mountain Observatory. The design and construction of the camera are described.

Herring, M.↗

Characterization and Modeling of Indium Gallium Antimonide Avalanche Photodiode and of Indium Gallium Arsenide Two-band Detector

A model of the optical properties of Al(x)Ga(1-x)As(y)Sb(1-y) and In(x)Ga(1-x)As(y)Sb(1-y) is presented, including the refractive, extinction, absorption and reflection coefficients in terms of the optical dielectric function of the materials. Energy levels and model parameters for each binary compound are interpolated to obtain the needed ternaries and quaternaries for various compositions. Bowing parameters are considered in the interpolation scheme to take into account the deviation of the calculated ternary and quaternary values from experimental data due to lattice disorders. The inclusion of temperature effects is currently being considered.

Source record↗

Optical Studies on Antimonide Superlattice Infrared Detector Material

In this study the material quality and optical properties of type II InAs/GaSb superlattices are investigated using transmission and photoluminescence (PL) spectroscopy. The influence of the material quality on the intensity of the luminescence and on the electrical properties of the detectors is studied and a good correlation between the photodetector current-voltage (IV) characteristics and the PL intensity is observed. Studies of the temperature dependence of the PL reveal that Shockley-Read-Hall processes are limiting the minority carrier lifetime in both the mid-IR wavelength and the long-IR wavelength detector material studied. These results demonstrate that PL spectroscopy is a valuable tool for optimization of infrared detectors.

heterostructure↗

Minority Carrier Lifetime Studies of Narrow Bandgap Antimonide Superlattices

In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.

minority carrier lifetime↗

High efficiency radioisotope thermophotovoltaic prototype generator

A radioisotope thermophotovoltaic generator space power system (RTPV) is lightweight, low-cost alternative to the present radioisotope thermoelectric generator system (RTG). The fabrication of such an RTPV generator has recently become feasible as the result of the invention of the GaSb infrared sensitive photovoltaic cell. Herein, we present the results of a parametric study of emitters and optical filters in conjuction with existing data on gallium antimonide cells. We compare a polished tungsten emitter with an Erbia selective emitter for use in combination with a simple dielectric filter and a gallium antimonide cell array. We find that the polished tungsten emitter is by itself a very selective emitter with low emissivity beyond 4 microns. Given a gallium antimonide cell and a tungsten emitter, a simple dielectric filter can be designed to transmit radiant energy below 1.7 microns and to reflect radiant energy between 1.7 and 4 microns back to the emitter. Because of the low long wavelength emissivity associated with the polished tungsten emitter, this simple dielectric filter then yields very respectable system performance. Also as a result of the longer wavelength fall-off in the tungsten emissivity curve, the radiation energy peak for a polished tungsten emitter operating at 1300 K shifts to shorter wavelengths relative to the blackbody spectrum so that the radiated energy peak falls right at the gallium antimonide cell bandedge. The result is that the response of the gallium antimonide cell is well matched to a polished tungsten emitter. We propose, therefore, to fabricate an operating prototype of a near term radioisotope thermophotovoltaic generator design consisting of a polished tungsten emitter, standard gallium antimonide cells, and a near-term dielectric filter. The Jet Propulsion Laboratory will design and build the thermal cavity, and JX Crystals will fabricate the gallium antimonide cells, dielectric filters, and resultant receiver panels. With 250 Watts of heat input, we expect this prototype to produce over 300 Watts of electrical energy output for a system energy conversion efficiency of over 12%. This low risk, near term design provides advances relative to present radioisotope thermophotovoltaic generators and has the additional advantage of allowing component and system development and testing to begin immediately. Improved cells and filters can easily be incorporated in this baseline system if they should become available in the future.

Avery, James E.↗

Coating Thermoelectric Devices To Suppress Sublimation

A technique for suppressing sublimation of key elements from skutterudite compounds in advanced thermoelectric devices has been demonstrated. The essence of the technique is to cover what would otherwise be the exposed skutterudite surface of such a device with a thin, continuous film of a chemically and physically compatible metal. Although similar to other sublimation-suppression techniques, this technique has been specifically tailored for application to skutterudite antimonides. The primary cause of deterioration of most thermoelectric materials is thermal decomposition or sublimation - one or more elements sublime from the hot side of a thermoelectric couple, changing the stoichiometry of the device. Examples of elements that sublime from their respective thermoelectric materials are Ge from SiGe, Te from Pb/Te, and now Sb from skutterudite antimonides. The skutterudite antimonides of primary interest are CoSb3 [electron-donor (n) type] and CeFe(3-x)Co(x)Sb12 [electron-acceptor (p) type]. When these compounds are subjected to typical operating conditions [temperature of 700 C and pressure <10(exp -5) torr (0.0013 Pa)], Sb sublimes from their surfaces, with the result that Sb depletion layers form and advance toward their interiors. As the depletion layer advances in a given device, the change in stoichiometry diminishes the thermal-to-electric conversion efficiency of the device. The problem, then, is to prevent sublimation, or at least reduce it to an acceptably low level. In preparation for an experiment on suppression of sublimation, a specimen of CoSb3 was tightly wrapped in a foil of niobium, which was selected for its chemical stability. In the experiment, the wrapped specimen was heated to a temperature of 700 C in a vacuum of residual pressure <10(exp -5) torr (0.0013 Pa), then cooled and sectioned. Examination of the sectioned specimen revealed that no depletion layer had formed, indicating the niobium foil prevented sublimation of antimony at 700 C. This was a considerable improvement, considering that uncoated CoSb3 had been found to decompose to form the lowest antimonide at the surface at only 600 C. Evidently, because the mean free path of Sb at the given temperature and pressure was of the order of tens of centimeters, any barrier closer than tens of centimeters (as was the niobium foil) would have suppressed transport of Sb vapor, thereby suppressing sublimation of Sb

Sakamoto, Jeffrey↗