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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

The electric fields and “lightning jets” of the Sun and solar wind

A model of electric energization of the solar wind and corona is developed, including electro-magnetic particle effects precluded by traditional magneto-hydro (MHD) assumptions. Using standard 1D radial solar models for particle density and temperature, the core gravito-electric field is calculated; and the range of possible photospheric photo-electric fields is estimated. The extant DC field apparently arises from about 460 C of charge displacement, mainly caused by the immense solar energy flux pushing electrons outward. Energetically, this electric field can accelerate surface protons out of the 2 keV gravity well and up to the 4 keV energies observed in the fast solar wind. The electrical energy is released in pervasive, persistent “proton lightning jets,” which are proton beams, charge-neutralized by co-propagating electrons. The jets are formed by pinched “avalanche breakdown” of the weakly ionized photosphere, probably initiated on the down-welling edges of solar surface granulations. These energetic jets will glow as discrete filamentary surface spicules and will be observed in reflected solar light as the diffuse K-corona. Significantly, the total charge displacement and observed fast wind speed are quantitatively predicted by a novel “virial limit”: the (positive) electrical potential energy at r = 0 is limited in magnitude to the 10 keV gravitational well at r = 0.

Physics↗
DOE OSTI2025

Remote detection of radioactive material using a short-pulse CO 2 laser

Detection of radioactive material at distances greater than the radiated particle range is an important goal with applications in areas such as national defense and disaster response. Here, we demonstrate avalanche-breakdown-based remote detection of a 3.6 mCi α-particle source at a standoff distance of 10 m, using 70 ps, long-wave infrared (λ = 9.2 µm) CO 2 laser pulses. This is ∼10 times longer than our previous results using a mid-IR laser. The primary detection method is direct backscatter from microplasmas generated in the laser focal volume. The backscatter signal is amplified as it propagates back through the CO 2 laser chain, enhancing sensitivity by >100 times. Here we also characterize breakdown plasmas with fluorescence imaging, and present a simple model to estimate backscattered signals as a function of the seed density profile in the laser focal volume. All of this is achieved with a relatively long-drive laser focal geometry (f/200) that is readily scalable to >100 m.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Self-Guiding of Long-Wave Infrared Laser Pulses Mediated by Avalanche Ionization

Nonlinear self-guided propagation of intense long-wave infrared (LWIR) laser pulses is of significant recent interest, as it promises high power transmission without beam breakup and multifilamentation. Central to self-guiding is the mechanism for the arrest of self-focusing collapse. Here, we show that discrete avalanche sites centered on submicron aerosols can arrest self-focusing, providing a new mechanism for self-guided propagation of moderate intensity LWIR pulses in outdoor environments. In this work, our conclusions are supported by simulations of LWIR pulse propagation using an effective index approach that incorporates the time-resolved plasma dynamics of discrete avalanche breakdown sites.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Spark Channel Dynamics of Electrostatic Discharges

When two differently-charged objects are brought in close proximity to each other, the resulting high electric fields can cause electron avalanche breakdown of the air gap separating the objects, a process known as electrostatic discharge (ESD). If enough initial charge is stored on the objects, the electrical breakdown can proceed to ionize the air to such a degree that a highly conductive filament of plasma forms in the gap, known as a spark channel. The spark electrically bridges the air gap, resulting in a rapid pulse of current that neutralizes the charge difference. The current pulse produces significant heating of the gas in the spark, resulting in dissociation, ionization, thermal radiation, and hydrodynamic expansion. ESD presents a hazard to electrically-sensitive devices, with consequences such as economic losses (e.g. damaged electronics) or unsafe response (e.g. unintended ignition of flammable gas mixtures, initiation of detonators, etc.). For this thesis, the ESD spark is taken to occur between two conducting electrodes, with the spark channel being axisymmetric in a cylindrical coordinate system centered on the channel. An RLC-type circuit is used for the discharge model of the ESD event. The spark is treated as a time-dependent resistance that is in series with a capacitance, an inductance, and (optionally) a load resistance representing a “victim” component under threat from the ESD event. The primary motivation of this work is to use a numerical hydrodynamic model to understand the energy dissipation and transport processes in the spark. The model consists of the compressible Euler equations of mass, momentum, and energy conservation together with an Eddington/P1 approximation for thermal radiation transport. To close the hydrodynamic system, an equation of state (EOS) was fitted from tabular data for air that accounts for the dissociation and ionization of air species. The hydrodynamic equations are solved using a conservative Lagrangian finite volume method. These partial differential equations are coupled to the circuit equations by calculation of the spark resistance via numerical integration of the electrical conductivity of the channel. Computational results are compared against experimental measurements of discharge current and radial density of the spark channel.

42 ENGINEERING↗
NASA NTRS1967

Improved frequency divider employs transistor avalanche effect

New frequency divider circuit can be synchronized over a wider input control frequency range, has greater phase stability, and is less sensitive to temperature changes than conventional synchronized oscillators. The new circuit uses the avalanche breakdown mode of operation of transistors.

Johns, C. E.↗
NASA NTRS1974

Nonlinear analysis of a family of LC tuned inverters

A family of four dc-to-square-wave LC tuned inverters are analyzed using singular point. Limit cycles and waveshape characteristics are given for three modes of oscillation: quasi-harmonic, relaxation, and discontinuous. An inverter in which the avalanche breakdown of the transistor emitter-to-base junction occurs is discussed and the starting characteristics of this family of inverters are presented. The LC tuned inverters are shown to belong to a family of inverters with a common equivalent circuit consisting of only three 'series' elements: a five-segment piecewise-linear current-controlled resistor, linear inductor, and linear capacitor.

Lee, F. C. Y.↗
NASA NTRS1989

Approaches toward a blue semiconductor laser

Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.

Ladany, I.↗
NASA NTRS1995

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Menkara, H. M.↗
NASA NTRS2010

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Aslam, Shahid↗
NASA NTRS2006

Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

bandwidth↗
NASA NTRS1974

Laser-induced electric breakdown in solids

A review is given of recent experimental results on laser-induced electric breakdown in transparent optical solid materials. A fundamental breakdown threshold exists characteristic for each material. The threshold is determined by the same physical process as dc breakdown, namely, avalanche ionization. The dependence of the threshold on laser pulse duration and frequency is consistent with this process. The implication of this breakdown mechanism for laser bulk and surface damage to optical components is discussed. It also determines physical properties of self-focused filaments.

Bloembergen, N.↗
DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
NASA NTRS1977

Picosecond laser-induced breakdown at 5321 and 5347 A - Observation of frequency-dependent behavior

A study is presented of picosecond laser-induced breakdown at 3547 and 5321 A of several materials. The thresholds obtained for breakdown at 5321 A are compared to previous results obtained at 1.064 microns using the same laser system. This comparison illustrates the transition of bulk laser-induced breakdown as it becomes increasingly frequency dependent. UV picosecond pulses are obtained by mixing 5321 A and 1.064 micron pulses in a KH2PO4 crystal. Upper and lower bounds on the 3547 A breakdown threshold are defined, although some effects of walk-off distortion and self-focusing are observed. The results are discussed with reference to models for the intrinsic processes involved in the breakdown, i.e., avalanche and multiphoton ionization.

Smith, W. L.↗
NASA NTRS2012

Some Aspects of the Failure Mechanisms in BaTiO3-Based Multilayer Ceramic Capacitors

The objective of this presentation is to gain insight into possible failure mechanisms in BaTiO3-based ceramic capacitors that may be associated with the reliability degradation that accompanies a reduction in dielectric thickness, as reported by Intel Corporation in 2010. The volumetric efficiency (microF/cm3) of a multilayer ceramic capacitor (MLCC) has been shown to not increase limitlessly due to the grain size effect on the dielectric constant of ferroelectric ceramic BaTiO3 material. The reliability of an MLCC has been discussed with respect to its structure. The MLCCs with higher numbers of dielectric layers will pose more challenges for the reliability of dielectric material, which is the case for most base-metal-electrode (BME) capacitors. A number of MLCCs manufactured using both precious-metal-electrode (PME) and BME technology, with 25 V rating and various chip sizes and capacitances, were tested at accelerated stress levels. Most of these MLCCs had a failure behavior with two mixed failure modes: the well-known rapid dielectric wearout, and so-called 'early failures." The two failure modes can be distinguished when the testing data were presented and normalized at use-level using a 2-parameter Weibull plot. The early failures had a slope parameter of Beta >1, indicating that the early failures are not infant mortalities. Early failures are triggered due to external electrical overstress and become dominant as dielectric layer thickness decreases, accompanied by a dramatic reduction in reliability. This indicates that early failures are the main cause of the reliability degradation in MLCCs as dielectric layer thickness decreases. All of the early failures are characterized by an avalanche-like breakdown leakage current. The failures have been attributed to the extrinsic minor construction defects introduced during fabrication of the capacitors. A reliability model including dielectric thickness and extrinsic defect feature size is proposed in this presentation. The model can be used to explain the Intel-reported reliability degradation in MLCCs with respect to the reduction of dielectric thickness. It can also be used to estimate the reliability of a MLCC based on its construction and microstructure parameters such as dielectric thickness, average grain size, and number of dielectric layers. Measures for preventing early failures are also discussed in this document.

Liu, David Donhang↗
DOE OSTI2022

Understanding the electromagnetic topology during the ohmic breakdown in tokamaks considering self-generated electric fields

We report that the physical mechanisms of the ohmic breakdown in a tokamak have been understood based on the classical Townsend avalanche theory. However, a new systematic theory (Yoo et al 2018 Nat. Commun.9 3523) recently demonstrated that electron avalanches during the ohmic breakdown are completely different from the Townsend avalanche due to strong self-generated electric fields. In this study, we elucidate the multi-dimensional effects of the self-generated electric field on plasma dynamics during the ohmic breakdown. We also propose a novel electromagnetic topology analysis method that can easily predict the overall plasma behavior and where the main plasma is generated. The topology analysis method is validated by a state-of-art particle simulation for various magnetic configurations. New physical insights into the complex electromagnetic topology would facilitate designing more reliable and optimized ohmic breakdown scenarios in future tokamaks, such as ITER and beyond.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Traditional mesa terminations require precise angle design to reduce the electric field at the edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a premature breakdown. This work proposes the use of easy-to-implement hydrogen plasma treatment to solve the premature breakdown caused by mesa and demonstrates the avalanche capability in GaN-on-GaN p-i-n diodes. The breakdown electric field when the avalanche occurred was ∼2.3 MV/cm at room temperature for a GaN drift layer with a doping concentration of ∼7 × 1015 cm−3, which is consistent with the theoretical value. The temperature coefficient of the avalanche breakdown voltage of the devices was 4.64–4.85 × 10−4 K−1. This work shows a simple and effective approach to achieve avalanche capability in vertical GaN power devices, which can serve as an important reference for the future development of efficient and robust GaN power electronics.

Fu, Kai (ORCID:0000000294057512)↗