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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Hunt, W. D.↗
NASA NTRS2001

Avalanche Photodiode Arrays for Optical Communications Receivers

An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.

Srinivasan, M.↗
NASA NTRS2005

Performance Dependences of Multiplication Layer Thickness for InP/InGaAs Avalanche Photodiodes Based on Time Domain Modeling

InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

Xiao, Yegao↗
NASA NTRS2004

Dark Current Degradation of Near Infrared Avalanche Photodiodes from Proton Irradiation

InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.

indium compounds↗
NASA NTRS2008

Nano-Multiplication-Region Avalanche Photodiodes and Arrays

Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.

Zheng, Xinyu↗
NASA NTRS1991

Design and testing of an active quenching circuit for an avalanche photodiode photon detector

The photon-detection capabilities of avalanche photodiodes (APDs) operating above their theoretical breakdown voltages are described, with particular attention given to the needs and methods of quenching an avalanche once breakdown has occurred. A brief background on the motives of and previous work with this mode of operation is presented. Finally, a description of the design and testing of an active quenching circuit is given. Although the active quenching circuit did not perform as expected, knowledge was gained as to the signal amplitudes necessary for quenching and the need for a better model for the above-breakdown circuit characteristics of the Geiger-mode APD.

Arbel, D.↗
DOE OSTI2023

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

Physics↗
NASA NTRS1991

Avalanche photodiode photon counting receivers for space-borne lidars

Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components.

Sun, Xiaoli↗
NASA NTRS2016

Interplanetary Space Weather Effects on Lunar Reconnaissance Orbiter Avalanche Photodiode Performance

Space weather is a major concern for radiation-sensitive space systems, particularly for interplanetary missions, which operate outside of the protection of Earth's magnetic field. We examine and quantify the effects of space weather on silicon avalanche photodiodes (SiAPDs), which are used for interplanetary laser altimeters and communications systems and can be sensitive to even low levels of radiation (less than 50 cGy). While ground-based radiation testing has been performed on avalanche photodiode (APDs) for space missions, in-space measurements of SiAPD response to interplanetary space weather have not been previously reported. We compare noise data from the Lunar Reconnaissance Orbiter (LRO) Lunar Orbiter Laser Altimeter (LOLA) SiAPDs with radiation measurements from the onboard Cosmic Ray Telescope for the Effects of Radiation (CRaTER) instrument. We did not find any evidence to support radiation as the cause of changes in detector threshold voltage during radiation storms, both for transient detector noise and long-term average detector noise, suggesting that the approximately 1.3 cm thick shielding (a combination of titanium and beryllium) of the LOLA detectors is sufficient for SiAPDs on interplanetary missions with radiation environments similar to what the LRO experienced (559 cGy of radiation over 4 years).

LOLA↗
DOE OSTI2021

Bias-dependent displacement damage effects in a silicon avalanche photodiode

Radiation effects studies on a commercial beveled-edge avalanche photodiode (APD) showed that applying reverse bias to the device during irradiation enhanced the severity of apparent damage. Proton microbeam irradiations were made using a proton beam energy of 2 MeV and fluence ranging from 2.0 × 10 10 to 5.1 × 10 12 cm -2 . Charge collection measurements using the ion beam induced charge (IBIC) technique showed that relative losses increased by up to an order of magnitude when the reverse bias applied during irradiation increased from 50 to 1500 V. The presence of reverse bias also led to equivalent losses in charge collection that would only be seen in irradiations with an order of magnitude higher fluence in unbiased APDs. The results demonstrate that bias-enhanced irradiation damage is insufficiently understood and must be accounted for in characterizations of radiation effects.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1990

Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

Ackley, D. E.↗
NASA NTRS2017

Radiation and Temperature Hard Multi-Pixel Avalanche Photodiodes

The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

Bensaoula, Abdelhak↗
NASA NTRS1998

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Vasile, Stefan↗
NASA NTRS2020

Advanced Silicon Avalanche Photodiodes on NASA's Global Ecosystem Dynamics Investigation (GEDI) Mission

Silicon Avalanche Photodiodes (APDs) are used in NASA’s Global Ecosystem Dynamics Investigation (GEDI) which was launched in December 2018 and is currently measuring the Earth’s vegetation vertical structure from the International Space Station. The APDs were specially made for space lidar with a much lower hole-to-electron ionization coefficient ratio (k-factor ~0.008) than that of commercially available silicon APDs in order to reduce the APD excess noise from the randomness of the avalanche gain. A silicon heater resistor was used under the APD chip to heat the device up to 70°C and improve its quantum efficiency at 1064 nm laser wavelength while maintaining a low dark current such that the overall signal to noise ratio is improved. Special APD protection circuits were used to raise the overload damage threshold to prevent device damage from strong laser return by specular surfaces, such as still water bodies, and space radiation events. The APD and a hybrid transimpedance amplifier circuit were hermetically sealed in a package with a sufficiently low leak rate to ensure multi-year operation lifetime in space. The detector assemblies underwent a series of pre-launch tests per NASA Goddard Environmental Verification Standard for space qualification. They have performed exactly as expected with GEDI in orbit. A detailed description of the GEDI detector design, signal and noise model, and test results are presented in this paper.

Sun, Xiaoli↗
NASA NTRS2014

Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n− gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

HgCdTe↗
NASA NTRS1992

Receiver characteristics of laser altimeters with avalanche photodiodes

The receiver characteristics of a laser altimeter system containing an avalanche photodiode photodetector are analyzed using the Gaussian approximation, the saddle-point approximation, and a nearly exact analysis. The last two methods are shown to yield very similar results except when the background noise is extremely low and the probability of false alarm is high. However, the Gaussian approximation method is shown to cause significant errors even under relatively high levels of background noise and received signal energy.

Sun, Xiaoli↗