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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Hybrid density functional study of band gap engineering of SrTi O 3 photocatalyst via doping for water splitting

Perovskite SrTiO 3 (STO) is an attractive photocatalyst for solar water splitting but suffers from a limited photoresponse in the visible spectral range due to its wide band gap. By means of hybrid density functional theory calculations, we systematically study engineering its band gap via doping 4$\textit{d}$ and 5$\textit{d}$ transition-metals $\textit{M}$ (M = Zr, Nb, Mo, Tc, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir, and Pt) and chalcogen elements $\textit{Y}$ ($\textit{Y}$ = S and Se).We find that transition-metal dopant M either has no effect on the STO band gap or introduces detrimental midgap states except for Pd and Pt that are able to reduce the STO band gap. In contrast, doping S and Se significantly reduces STO’s direct band gap, thus, leading to appreciable optical absorption transitions in the visible spectral range. In this work, our findings provide that Pd-, S-, and Se-doped STO are potential promising photocatalysts for water splitting under visible light irradiation thereby providing insightful theoretical guides for experiments to improve the photocatalytic activity of STO.

36 MATERIALS SCIENCE↗
NASA NTRS1995

An X-Band Mixer Engineered for 77 K Operation

An X-band Si-diode singly balanced mixer developed specifically for cryogenic operation is presented. In order to reduce thermal demands on a mechanical cooler, the mixer was designed to operate with a minimum of local oscillator (LO) power. That is, since the LO had to be cooled to reduce phase noise, it was desirable to minimize the LO drive. Novel embedding circuit strategy was responsible for nearly theoretical performance. The signal-matching circuit simultaneously provided a reactive termination to the image, sum, and first, second, and third LO harmonic frequencies. A conversion loss of 3.2 dB at 77 K with an LO drive of +1 dBm was measured. This loss included IF filter, dc block, and hybrid coupler losses. Mixer conversion loss is shown to be consistent with the theoretical performance limit expected from the intrinsic diode. The relationship among junction capacitance, flat-band potential, and conversion loss is examined.

Romanofsky, Robert R.↗
NASA NTRS2011

L-Band System Engineering - Concepts of Use, Systems Performance Requirements, and Architecture

This document is being provided as part of ITT s NASA Glenn Research Center Aerospace Communication Systems Technical Support (ACSTS) contract NNC05CA85C, Task 7: New ATM Requirements-Future Communications, C-band and L-band Communications Standard Development. Task 7 was motivated by the five year technology assessment performed for the Federal Aviation Administration (FAA) under the joint FAA-EUROCONTROL cooperative research Action Plan (AP-17), also known as the Future Communications Study (FCS). It was based on direction provided by the FAA project-level agreement (PLA FY09_G1M.02-02v1) for "New ATM Requirements-Future Communications." Task 7 was separated into two distinct subtasks, each aligned with specific work elements and deliverable items. Subtask 7-1 addressed C-band airport surface data communications standards development, systems engineering, test bed development, and tests/demonstrations to establish operational capability for what is now referred to as the Aeronautical Mobile Airport Communications System (AeroMACS). Subtask 7-2, which is the subject of this report, focused on preliminary systems engineering and support of joint FAA/EUROCONTROL development and evaluation of a future L-band (960 to 1164 MHz) air/ground (A/G) communication system known as the L-band digital aeronautical communications system (L-DACS), which was defined during the FCS. The proposed L-DACS will be capable of providing ATM services in continental airspace in the 2020+ timeframe. Subtask 7-2 was performed in two phases. Phase I featured development of Concepts of Use, high level functional analyses, performance of initial L-band system safety and security risk assessments, and development of high level requirements and architectures. It also included the aforementioned support of joint L-DACS development and evaluation, including inputs to L-DACS design specifications. Phase II provided a refinement of the systems engineering activities performed during Phase I, along with continued joint FAA/EUROCONTROL L-DACS development and evaluation support.

Henriksen, Stephen↗
DOE OSTI2020

Phase‐Dependent Band Gap Engineering in Alloys of Metal‐Semiconductor Transition Metal Dichalcogenides

Abstract Bandgap engineering plays a critical role in optimizing the electrical, optical and (photo)‐electrochemical applications of semiconductors. Alloying has been a historically successful way of tuning bandgaps by making solid solutions of two isovalent semiconductors. In this work, a novel form of bandgap engineering involving alloying non‐isovalent cations in a 2D transition metal dichalcogenide (TMDC) is presented. By alloying semiconducting MoSe 2 with metallic NbSe 2 , two structural phases of Mo 0.5 Nb 0.5 Se 2 , the 1T and 2H phases, are produced each with emergent electronic structure. At room temperature, it is observed that the 1T and 2H phases are semiconducting and metallic, respectively. For the 1T structure, scanning tunneling microscopy/spectroscopy (STM/STS) is used to measure band gaps in the range of 0.42–0.58 at 77 K. Electron diffraction patterns of the 1T structure obtained at room temperature show the presence of a nearly commensurate charge density wave (NCCDW) phase with periodic lattice distortions that result in an uncommon 4 × 4 supercell, rotated approximately 4° from the lattice. Density‐functional‐theory calculations confirm that local distortions, such as those in a NCCDW, can open up a band gap in 1T ‐Mo 0.5 Nb 0.5 Se 2 , but not in the 2H phase. This work expands the boundaries of alloy‐based bandgap engineering by introducing a novel technique that facilitates CDW phases through alloying.

Wang, Shuxi↗
DOE OSTI2023

Band inversion-driven warping and high valley degeneracy

Band inversion is a physical phenomenon that can warp the band structure in topological insulators, generating multiple electronic valleys for conducting carriers. However, the conditions under which band inversion induces warping are not well understood. Here, we derive two general rules that must be satisfied for band warping to occur in centrosymmetric and non-magnetic topological insulators: (1) bands must be sufficiently inverted, and (2) secondary bands must have opposite parity and be close in energy to the band edges. We chart the valley degeneracies that can emerge from band inversion in each of the 11 centrosymmetric point groups, revealing that an increase in the valley degeneracy between 2- and 48-fold is possible from band inversion. The generalized rules offer a unique band engineering approach by capitalizing on the non-trivial electronic structures of topological insulators.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Band-gap Engineering in Sputter Deposited Amorphous/Microcrystalline Sc(x)Ga(1-x)N

Reactive sputtering was used to grow thin films of Sc(x)Ga(1-x)N with scandium concentrations of 20%-70% on quartz substrates at temperatures of 300-675 K. X-ray diffraction (XRD) of the films showed either weak or no structure, suggesting the films are amorphous or microcrystalline. Optical absorption spectra were taken of each sample and the optical band gap was determined. The band gap varied linearly with increasing Ga concentration between 2.0 and 3.5 eV. Ellipsometry was used to confirm the band gap measurements and provide optical constants in the range 250-1200 nm. ScN and GaN have different crystal structures (rocksalt and wurzite, respectively), and thus may form a heterogeneous mixture as opposed to an alloy. Since the XRD data were inconclusive, bilayers of ScN/GaN were grown and optical absorption spectra taken. A fundamental difference in the spectra between the bilayer films and alloy films was seen, suggesting the films are alloys, not heterogeneous mixtures.

Little, Mark E.↗
DOE OSTI2025

Band Gap Engineering and Metastable Phase Discovery in Cu 2 BaSnS 4– x Se x Nanocrystals via Topotactic Anion Exchange

Earth-abundant multinary inorganic chalcogenides, such as Cu 2 BaSnS 4–x Se x (CBTSSe), have emerged as promising absorbers for next-generation solar cells. However, accessing colloidal CBTSSe nanocrystals, including metastable polymorphs with more favorable optoelectronic properties, remains a critical synthetic challenge. Herein, we report the first use of topotactic anion exchange to access metastable crystal structures in soft chemistry syntheses. By varying the stoichiometry of selenium precursors, we directly synthesize Cu 2 BaSnS 4–x Se x (0 ≤ x ≤ 4) nanocrystals with a broad band gap tunability of 1.51–2.04 eV. At x = 4, a new metastable trigonal phase of Cu 2 BaSnSe 4 is isolated. This phase arises via an in-situ topotactic anion exchange from sulfur-rich Cu 2 BaSnS 4–x Se x intermediates, while retaining both the cation sublattice and overall nanocrystal morphology. The trigonal Cu 2 BaSnSe 4 exhibits a nearly direct band gap that is 280 meV lower than its thermodynamically stable orthorhombic counterpart, aligning more closely with the optimal band gap for single-junction solar cells. In contrast, a post-synthetic anion exchange route leads to the thermodynamically preferred orthorhombic polymorph, pointing to the critical nature of the in-situ transformation. Our findings open a versatile pathway for both polymorphic and morphological control in colloidal nanocrystals, expanding the synthetic design space for new optoelectronic materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Out-of-Plane Magnetic Anisotropy Engineered via Band Distortion in Two-Dimensional Materials

We unveil the connection between magnetic anisotropy and band structures in Γ-specialized In 2 Se 3 /Fe 3 GeTe 2 heterostructure, through first-principles calculations. A significant band distortion occurs near the Γ point with a formed valley. As the band-distortion-caused valley moves relative to the quasivalence band maximum, the magnetic anisotropy switches between in-plane and out-of-plane magnetic anisotropy. Such a rule applies to either the strained or polarization-switched In 2 Se 3 /Fe 3 GeTe 2 heterostructure. Furthermore, these findings demonstrate the feasibility of predicting the magnetic anisotropy by band structure modification in two-dimensional magnetic systems.

2-dimensional systems↗
DOE OSTI2023

Quantum Dots on Silicon-on-Insulator (QD/SOI): Nanoscale Strain and Band Structure Engineering (Final Report)

As the project titles indicate, the work focused on Group IV nanomembranes (NMs), thin functional layers, and interfaces, all with one or more dimensions at the nanoscale. The primary focus was discovery driven fundamental science. This approach led to surprising new, unexpected results that ended up being patentable and creating commercial value, but that were also high-impact science. Our effort divided into several overlapping thrusts: 1) strain engineering of NMs, via both lattice strain and externally applied strain, 2) interfaces between crystalline semiconductor NMs and other 2D sheets that are stacked or grown on each other, and 3) charge transport (electronics and optoelectronics) in thin layers, sheets, and surfaces. We accomplish these goals via 1) fabrication of new or higher-quality materials using NM approaches, 2) growth of new combinations, or 3) transfer and stacking to create new composites. The range of materials included combinations of Si, Ge, graphene, and several III-V compounds. The work has foundations in both nano- and mesoscale science.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Space shuttle engineering and operations support. Isolation between the S-band quad antenna and the S-band payload antenna. Engineering systems analysis

The isolation between the upper S-band quad antenna and the S-band payload antenna on the shuttle orbiter is calculated using a combination of plane surface and curved surface theories along with worst case values. A minimum value of 60 db isolation is predicted based on recent antenna pattern data, antenna locations on the orbiter, curvature effects, dielectric covering effects and edge effects of the payload bay. The calculated value of 60 db is significantly greater than the baseline value of 40 db. Use of the new value will result in the design of smaller, lighter weight and less expensive filters for S-band transponder and the S-band payload interrogator.

Lindsey, J. F.↗
DOE OSTI2022

Electronic structure of Humble defects in Ge and Ge 0.8⁢ Si 0.2

The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111}, and {113} planar defects in Si and Ge. Among the {001} planar defects, the Humble defect, known for some time to occur in Ge, has recently also been observed in Si-Ge alloys, but the details of its electronic structure remain poorly understood. Here, in this work, we perform first-principles density-functional calculations to study Humble defects in both Ge and Ge 0.8⁢ Si 0.2 . We also measure the Si L 2,3 -edge electron energy-loss spectra both at the defect and in a bulk-like region far from the defect and compare with theoretical calculations on corresponding Si sites in our first-principles calculations. We find that inclusion of core-hole effects in the theory is essential for reproducing the observed L 2,3 edge spectra, and that once they are included, the results provide a set of fingerprints for different types of local atomic bonding environments in Ge 0.8⁢ Si 0.2 . Our first-principles calculations reveal that the Humble defects have a tendency to enlarge the electronic band gap, which may have potential uses in band engineering. The use of hybrid functionals for an improved description of the band gap in these systems is also discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Superconductivity and strong correlations in moiré flat bands

Strongly correlated systems can give rise to spectacular phenomenology, from high-temperature superconductivity to the emergence of states of matter characterized by long-range quantum entanglement. Low-density flat-band systems play a vital role because the energy range of the band is so narrow that the Coulomb interactions dominate over kinetic energy, putting these materials in the strongly-correlated regime. Experimentally, when a band is narrow in both energy and momentum, its filling may be tuned in situ across the whole range, from empty to full. Recently, one particular flat-band system—that of van der Waals heterostructures, such as twisted bilayer graphene—has exhibited strongly correlated states and superconductivity, but it is still not clear to what extent the two are linked. As a result, we review the status and prospects for flat-band engineering in van der Waals heterostructures and explore how both phenomena emerge from the moiré flat bands.

Balents, Leon↗
DOE OSTI2021

Finding the order in complexity: The electronic structure of 14-1-11 zintl compounds

Yb 14 MnSb 11 and Yb 14 MgSb 11 have rapidly risen to prominence as high-performing p-type thermoelectric materials. However, the fairly complex crystal structure of A 14 MX 11 Zintl compounds renders the interpretation of the electronic band structure obscure, making it difficult to chemically guide band engineering and optimization efforts. In this work, we delineate the valence-balanced Zintl chemistry of A 14 MX 11 compounds using the molecular orbital theory. By analyzing the electronic band structures of Yb 14 MgSb 11 and Yb 14 AlSb 11 , we show that the conduction band minimum is composed of either an antibonding molecular orbital originating from the (Sb 3 ) 7– trimer or a mix of atomic orbitals of A, M, and X. The singly degenerate valence band is comprised of non-bonding Sb pz orbitals primarily from the Sb atoms in the (MSb 4 ) m– tetrahedra and of isolated Sb atoms distributed throughout the unit cell. Such a chemical understanding of the electronic structure enables strategies to engineer electronic properties (e.g., the bandgap) of A 14 MX 11 compounds.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Experimental determination of the valence band offsets of ZnGeN 2 and (ZnGe) 0.94 Ga 0.12 N 2 with GaN

A predicted type-II staggered band alignment with an approximately 1.4 eV valence band offset at the ZnGeN 2 /GaN heterointerface has inspired novel band-engineered III-N/ZnGeN 2 heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown (ZnGe) 1- x Ga 2 x N 2 , for x = 0 and 0.06, and GaN using x-ray photoemission spectroscopy. The valence band of ZnGeN 2 was found to lie 1.45–1.65 eV above that of GaN. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For (ZnGe) 0.94 Ga 0.12 N 2 the value was determined to be 1.29 eV, ~10%–20% lower than that of ZnGeN 2 . The experimental determination of the large band offset between ZnGeN 2 and GaN provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.

Physics↗