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At least 37 records · Page 2

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funneling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Zoutendyk, J. A.↗

Method of measuring field funneling and range straggling in semiconductor charge-collecting junctions

Electric-field funneling length is measured while irradiating a semiconductor charge-collecting junction with electron-hole-pair generating charged particles at a first junction bias voltage. The bias voltage is then reduced to a second level in order to reduce the depth of the depletion region such that the total charge can no longer be collected by drift and measured in the energy band previously displayed in the multichannel analyzer. This is representative of the maximum electric field funnelling length which may be calculated by measuring the difference at the second bias voltage level of the depletion width and the ion penetration range. The bias voltage is further lowered to a third level at which the particles are collected over a spread of energy levels while at least some of the particles are still collected at the selected energy level. From this the different depths of penetration of the particles are determined while additional effects due to diffusion are minimized.

Zoutendyk, John A.↗

Instrumentation and Methodology Development for Mars Mission

The Mars environment comprises a dry, cold and low air pressure atmosphere with low gravity (0.38g) and high resistivity soil. The global dust storms that cover a large portion of Mars were observed often from Earth. This environment provides an idea condition for triboelectric charging. The extremely dry conditions on the Martian surface have raised concerns that electrostatic charge buildup will not be dissipated easily. If triboelectrically generated charge cannot be dissipated or avoided, then dust will accumulate on charged surfaces and electrostatic discharge may cause hazards for future exploration missions. The low surface temperature on Mars helps to prolong the charge decay on the dust particles and soil. To better understand the physics of Martian charged dust particles is essential to future Mars missions. We research and design two sensors, velocity/charge sensor and PZT momentum sensors, to detect the velocity distribution, charge distribution and mass distribution of Martian charged dust particles. These sensors are fabricated at NASA Kenney Space Center, Electromagnetic Physics Testbed. The sensors will be tested and calibrated for simulated Mars atmosphere condition with JSC MARS-1 Martian Regolith simulant in this NASA laboratory.

Chen, Yuan-Liang Albert↗

Development of Charge to Mass Ratio Microdetector for Future Mars Mission

The Mars environment comprises a dry, cold and low air pressure atmosphere with low gravity (0.38g) and high resistivity soil. The global dust storms that cover a large portion of Mars are observed often from Earth. This environment provides an ideal condition for turboelectric charging. The extremely dry conditions on the Martian surface have raised concerns that electrostatic charge buildup will not be dissipated easily. If turboelectrically generated charge cannot be dissipated or avoided, then dust will accumulate on charged surfaces and electrostatic discharge may cause hazards for future exploration missions. The low surface on Mars helps to prolong the charge decay on the dust particles and soil. To better understanding the physics of Martian charged dust particles is essential to future Mars missions. We research and design two sensors, velocity/charge sensor and PZT momentum sensors, to measure the velocity distribution, charge distribution and mass distribution of Martian wed dust particles. These sensors are fabricated at NASA Kenney Space Center, Electrostatic and Surface Physics Laboratory. The sensors are calibrated. The momentum sensor is capable to measure 45 pan size particles. The designed detector is very simple, robust, without moving parts, and does not require a high voltage power supply. Two sensors are combined to form the Dust Microdetector - CHAL.

Chen, Yuan-Lian Albert↗

Thermal Control Utilizing an Thermal Control Utilizing an Two-Phase Loop with High Heat Flux Source

The electric field applied in dielectric fluids causes an imbalance in the dissociation-recombination reaction generated free space charges. The generated charges are redistributed by the applied electric field resulting in the heterocharge layers in the Vicinity of the electrodes. Proper design of the electrodes generates net axial flow motion pumping the fluid. The electrohydrodynamic (EHD) conduction pump is a new device that pumps dielectric fluids utilizing heterocharge layers formed by imposition of electrostatic fields. This paper evaluates the experimental performance of a two-phase breadboard thermal control loop consisting of an EHD conduction pump, condenser, pre-heater, high heat flux evaporator (HE), transport lines, and reservoir (accumulator). The generated pressure head and the maximum applicable heat flux are experimentally determined at various applied voltages and sink temperatures. Recovery from dryout condition by increasing the applied voltage to the pump is also demonstrated.

Jeong, Seong-Il↗

Mathematical physics approaches to lightning discharge problems

Mathematical physics arguments useful for lightning discharge and generation problems are pursued. A soliton Ansatz for the lightning stroke is treated including a charge generation term which is the ultimate source for the phenomena. Equations are established for a partially ionized plasma inding the effects of pressure, magnetic field, electric field, gravitation, viscosity, and temperature. From these equations is then derived the non-stationary generalized Ohm's Law essential for describing field/current density relationships in the horizon channel of the lightning stroke. The discharge initiation problem is discussed. It is argued that the ionization rate drives both the convective current and electric displacement current to increase exponentially. The statistical distributions of charge in the thundercloud preceding a lightning dischage are considered. The stability of the pre-lightning charge distributions and the use of Boltzmann relaxational equations to determine them are discussed along with a covered impedance path provided by the aircraft.

Kyrala, A.↗

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Fossum, Eric R.↗

Plasma Source for Charge Control

Plasma source neutralizes electrical charge on spacecraft. When triggered by command from spacecraft potential monitor or from control system, plasma apparatus responds within about 1 s, generating charged plasma of required polarity. Discharging system to be tested on Air Force Geophysics Laboratory BERT-1 (Beam Emission Rocket Test) sounding rocket.

Aston, G.↗

Impulsive penetration and viscous interaction

How the magnetosheath plasma enters the entry layer and low latitude boundary layers, with the particle energy spectra almost unchanged is investigated. It was proposed by Lemaire that this is accomplished by impulsive penetration of plasma clouds of plasmoids. Once inside the magnetosphere, a plasmoid with its own momentum will polarize, to create its own electric field for continued motion. This voltage generator charges up the sides of the boundary layers, in the process creating the internal magnetospheric electric field. The entry layer particles will gradient and curvature drift, constituting still another generator, a current generator, to power magnetospheric plasma processes. This may be the explanation for the viscous interaction first proposed by Axford and Hines.

Heikkila, W. J.↗

Vehicle charging and potential on the STS-3 mission

An electron gun with fast pulse capability was used in the vehicle charging and potential experiment carried on the OSS-1 pallet to study dielectric charging, return current mechanisms, and the techniques required to manage the electrical charging of the orbiter. Return currents and charging of the dielectrics were measured during electron beam emission and plasma characteristics in the payload bay were determined in the absence of electron beam emission. The fast pulse electron generator, charge current probes, spherical retarding potential analyzer, and the digital control interface unit which comprise the experiment are described. Results show that the thrusters produce disturbances which are variable in character and magnitude. Strong ram/wake effects were seen in the ion densities in the bay. Vehicle potentials are variable with respect to the plasma and depend upon location on the vehicle relative to the main engine nozzles, the vehicle attitude, and the direction of the geomagnetic field.

Williamson, R.↗

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗

Experience with 800 x 800 virtual phase and 500 x 500 three-phase CCD imagers

A description of the Galileo/Institute for Astronomy charge-coupled device (CCD) imaging system and its initial operation has been presented previously. Originally designed to operate a 500 x 500 backside illuminated three-phase CCD, the system has been modified to allow use of either the 500 x 500 sensor or the TI 800 x 800 virtual phase CCD. The modifications for the operation of the virtual phase CCD and current system performance with each type of sensor are discussed. A description is given of the implementation of various techniques discovered at the Jet Propulsion Laboratory that improve imager performance. These techniques include tri-level clocking of the virtual phase CCD to eliminate spurious charge generation in the serial register, the use of ultraviolet light flood with the backside thinned 500 x 500 three-phase device to dramatically improve the quantum efficiency in the blue, and the practical elimination of deferred charge in the three-phase device. Results of astronomical observations with each sensor are presented.

Hlivak, R. J.↗

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗

Electrostatic Power Generation from Negatively Charged, Simulated Lunar Regolith

Research was conducted to develop an electrostatic power generator for future lunar missions that facilitate the utilization of lunar resources. The lunar surface is known to be negatively charged from the constant bombardment of electrons and protons from the solar wind. The resulting negative electrostatic charge on the dust particles, in the lunar vacuum, causes them to repel each other minimizing the potential. The result is a layer of suspended dust about one meter above the lunar surface. This phenomenon was observed by both Clementine and Surveyor spacecrafts. During the Apollo 17 lunar landing, the charged dust was a major hindrance, as it was attracted to the astronauts' spacesuits, equipment, and the lunar buggies. The dust accumulated on the spacesuits caused reduced visibility for the astronauts, and was unavoidably transported inside the spacecraft where it caused breathing irritation [1]. In the lunar vacuum, the maximum charge on the particles can be extremely high. An article in the journal "Nature", titled "Moon too static for astronauts?" (Feb 2, 2007) estimates that the lunar surface is charged with up to several thousand volts [2]. The electrostatic power generator was devised to alleviate the hazardous effects of negatively charged lunar soil by neutralizing the charged particles through capacitive coupling and thereby simultaneously harnessing power through electric charging [3]. The amount of power generated or collected is dependent on the areal coverage of the device and hovering speed over the lunar soil surface. A thin-film array of capacitors can be continuously charged and sequentially discharged using a time-differentiated trigger discharge process to produce a pulse train of discharge for DC mode output. By controlling the pulse interval, the DC mode power can be modulated for powering devices and equipment. In conjunction with a power storage system, the electrostatic power generator can be a power source for a lunar rover or other systems. The negatively charged lunar soil would also be neutralized mitigating some of the adverse effects resulting from lunar dust.

Choi, Sang H.↗