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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Electric fields and secondary emission near a dielectric-metal interface

Dielectric surface-charge distributions near a metal-dielectric interface in vacuum depend upon secondary emission processes in the presence of normal and tangential components of electric field. From measured charge distributions created by exposing a specimen of fluorinated ethylene-propylene to monoenergetic electron fluxes, it has been possible to calculate potentials and fields on and near the dielectric surface. The effect of the normal electric field upon secondary emission is measured directly, and the effect of the tangential field is inferred from the charge-distribution data. The critical point (unity crossover) for secondary emission is shifted by the application of fields, so that it occurs at much higher primary energies than normally. Primary beams having energies up to 20 keV are used, and surface fields are as high as 20 kV/mm.

Robinson, J. W.↗
NASA NTRS1979

Ge photocapacitive MIS infrared detectors

An undoped Ge photocapacitive detector is reported which has peak normalized detectivities at wavelengh 1.4 microns and chopping frequencies 13-1000 Hz of 9 x 10 to the 12th, 4 x 10 to the 9th cm Hz to the 1/2th/W operating respectively at temperatures 77, 195, and 295 K. The observed temperature, spectral, and frequency response of the signal and noise are explained in terms of the measured space charge and interface state properties of the device.

Binari, S. C.↗
NASA NTRS1986

Behavior of inversion layers in 3C silicon carbide

A study on the field-induced surface-charge region in 3C silicon carbide (SiC) using 1 MHz capacitance-voltage (C-V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal-oxide-semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C-V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority-carrier generation occurs at the SiO2/SiC interface.

Avila, R. E.↗
NASA NTRS1994

The World Wide Web and Technology Transfer at NASA Langley Research Center

NASA Langley Research Center (LaRC) began using the World Wide Web (WWW) in the summer of 1993, becoming the first NASA installation to provide a Center-wide home page. This coincided with a reorganization of LaRC to provide a more concentrated focus on technology transfer to both aerospace and non-aerospace industry. Use of the WWW and NCSA Mosaic not only provides automated information dissemination, but also allows for the implementation, evolution and integration of many technology transfer applications. This paper describes several of these innovative applications, including the on-line presentation of the entire Technology Opportunities Showcase (TOPS), an industrial partnering showcase that exists on the Web long after the actual 3-day event ended. During its first year on the Web, LaRC also developed several WWW-based information repositories. The Langley Technical Report Server (LTRS), a technical paper delivery system with integrated searching and retrieval, has proved to be quite popular. The NASA Technical Report Server (NTRS), an outgrowth of LTRS, provides uniform access to many logically similar, yet physically distributed NASA report servers. WWW is also the foundation of the Langley Software Server (LSS), an experimental software distribution system which will distribute LaRC-developed software with the possible phase-out of NASA's COSMIC program. In addition to the more formal technology distribution projects, WWW has been successful in connecting people with technologies and people with other people. With the completion of the LaRC reorganization, the Technology Applications Group, charged with interfacing with non-aerospace companies, opened for business with a popular home page.

Nelson, Michael L.↗
NASA NTRS1977

Surface charge kinetics near metal-dielectric interfaces exposed to kilovolt electron flux

Interfaces between dielectric films and grounded metallic boundaries were exposed, in vacuum, to monoenergic electron fluxes having energies up to 22 keV. Two principal concerns were the measuring of the charge distributions on dielectrics and the determining of causes of flashovers, events where dielectric surface charges abruptly transfer to the metallic structures. Surface charges are perturbed within 10 mm of interfaces. Perturbations are relatively small except within about 3 mm of the interface. The probability of flashover was found to be related to microscopic imperfections in the interfaces. As flashovers occur in an exposed metal substrate, points become burned into the dielectric along the slit. As these points develop, the probability of flashover increases greatly. An interface which is highly immune to flashover was formed by covering a dielectric film with a 1.5-mm-thick aperture plate which exposes the film through a machined opening.

Robinson, J. W.↗
NASA NTRS1980

Processing dependence of metal/tunnel-oxide/silicon junctions

The effects of process variations on the fixed-charge density, interface-state density, and tunneling properties of tunnel oxides on (100) silicon are discussed. Annealing the oxide in nitrogen reduces the fixed-charge and interface-state densities substantially, but also causes a marked increase in oxide capacitance. Anneals in forming gas before metallization alter the interface-state distribution and decrease the insulating qualities of the tunneling oxides. Postmetallization anneals in forming gas reduce the interface-state density to 1 x 10 to the 11th e/sq cm V or below, and appear not to affect the current through the oxide. No evidence for metal-induced interface states is observed.

Dressendorfer, P. V.↗
NASA NTRS1990

MIS capacitor studies on silicon carbide single crystals

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Kopanski, J. J.↗
NASA NTRS1993

Ballistic-Charge-Carrier Spectroscopy Of CoSi(2)/Si Interfaces

Report discusses experiments in which ballistic-electron-emission microscopy (BEEM) and related ballistic-hole and charge-carrier-scattering spectroscopies used to investigate transport of electric-charge carriers (electrons and holes) in epitaxial CoSi2/Si system.

Hecht, Michael H.↗
NASA NTRS1982

Heat transfer analysis of the Bridgman-Stockbarger configuration for crystal growth. Part 1: Analytical treatment of the axial temperature distribution

All first order effects on the axial temperature distribution in a solidifying charge in a Bridgman-Stockbarger configuration for crystal growth are analyzed on the basis of a one dimensional model whose validity can be verified through comparison with published finite difference ana;uses of two dimensional models. The model presented includes an insulated region between axially aligned heat pipes and considers the effects of charge diameter, charge motion, thickness, and thermal conductivity of a confining crucible, thermal conductivity change at the crystal-melt interface, generation of latent heat at the interface, and finite charge length. Results are primarily given in analytical form and can be used without recourse to computer work for both improve furnace design and optimization of growth conditions in a given thermal configuration.

Jasinski, T. J.↗
NASA NTRS1982

Thermal analysis of the vertical bridgman semiconductor crystal growth technique

The quality of semiconductor crystals grown by the vertical Bridgman technique is strongly influenced by the axial and radial variations of temperature within the charge. The relationship between the thermal parameters of the vertical Bridgman system and the thermal behavior of the charge are examined. Thermal models are developed which are capable of producing results expressable in analytical form and which can be used without recourse to extensive computer work for the preliminary thermal design of vertical Bridgman crystal growth systems. These models include the effects of thermal coupling between the furnace and the charge, charge translation rate, charge diameter, thickness and thermal conductivity of the confining crucible, thermal conductivity change and liberation of latent heat at the growth interface, and infinite charge length. The hot and cold zone regions, considered to be at spatially uniform temperatures, are separated by a gradient control region which provides added thermal design flexibility for controlling the temperature variations near the growth interface.

Jasinski, T. J.↗
NASA NTRS1992

Role of dielectric constant in electrohydrodynamics of conducting fluids

Electrohydrodynamic (EHD) flows are driven by the interaction of an electric field with variations in electric conductivity or dielectric constant. In reported EHD experiments on the deformation of drops of immiscible dielectric fluids, the role of conductivity has tended to overshadow the role of dielectric constant. Often, large conductivity contrasts were convenient because the conductivities of the dielectric fluid were relatively uncertain. As a result, the observed effects were always qualitatively the same as if there had been no contrast in dielectric constant. Our early experiments studying the EHC deformations of cylindrical streams readily showed the conductivity effect but the dielectric constant effect was not discernible. We have modified our flow chamber and improved our method of observation and can now see an unequivocal dielectric constant effect which is in agreement with the prior theory. In this paper we first give a brief description of the physics of charge buildup at the interface of an immersed spherical drop or flowing cylindrical sample stream and then show how these charge distributions lead to interface distortions and accompanying viscous flows which constitute EHD. We next review theory and experiment describing the deformation of spherical drops. We show that in the reported drop deformation experiments, the contrast in dielectric constant was never sufficient to reverse the deformation due to the conductivity contrast. We review our work describing the deformation of a cylindrical stream of one fluid flowing in a parallel flow of another, and we compare the deformation equations with those for spherical drops. Finally, we show a definite experimental dielectric constant effect for cylindrical stream of aqueous polystyrene latex suspension. The dielectric constant varies with the frequency of the imposed electric field, and the associated EHD flow change is very apparent.

Rhodes, Percy H.↗
NASA NTRS1982

Radiation-induced defects in SiO2 as determined with XPS

An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density and electron mean free path as a function of depth, for the cases of device-quality gate oxides grown on Si substrates and irradiated with zero to 20 eV electrons during in situ X-ray photoelectron spectroscopy. These structures had been thinned stepwise to 25-60 A by means of a wet chemical depth-profiling procedure. Si(3+) species are formed in the Si/SiO2 interface region, and their observation during their relaxation and annihilation is correlated with strained Si-O-Si bonds. The observation of bond of cleavage and bond strain gradients in these samples is used to extend silica devitrification models for the explanation of fixed oxide charge generation and interface states.

Grunthaner, F. J.↗
NASA NTRS1987

Silicon radiation detectors with oxide charge state compensation

This paper discusses the use of boron implantation on high resistivity P type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P type silicon produces an inversion layer which causes high leakage currents on N(+)P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N(+)P junctions with very low leakage currents and with low surface conductance.

Walton, J. T.↗
NASA NTRS1973

Heat treatment effects in Cu2S-CdS heterojunction photovoltaic cells

The optical and electronic properties of single crystal Cu2S-CdS photovoltaic cells were investigated. In these cells trapped charge near the interface which is manifested by a persistent increase in junction capacitance (the photocapacitance) plays a significant role in determining the carrier transport properties. It was found that the severe degradation in short-circuit current observed in heat-treated cells can be separated into two components: (1) a relatively small thermal component occurring on heat-treatment in the dark, and (2) a much larger degradation caused by exposure to light at room temperature. By a short additional heat-treatment above approximately 100 C the cell can be completely restored to its condition before the optically caused degradation with no effect on the depletion layer width.

Fahrenbruch, A. L.↗
NASA NTRS1973

Electrical properties of dry rocks

The mechanism by which atmospheric moisture affects the conductivity and dielectric constant of rock specimens was studied in time and frequency domains. It is suggested that adsorbed water molecules alter the surface conductivity in a manner similar to that observed in semiconductors and insulators. Powdered basalts show a low-frequency dispersion produced by the atmospheric moisture remaining in the pore system of the sample in a high vacuum; this effect is attributed to isolated adsorption centers. Simulated lunar permafrost at 100 K and a vacuum of 10 to the -8th power torr together with data on lunar samples contaminated with atmospheric moisture and the dielectric properties of ice at various temperatures indicate that, if permafrost exists in the moon it should present a relaxation peak at approximately 300 Hz; for temperatures up to 263 K it may go up to 20 KHz. It is concluded that in order to have electrical steady state conditions in rock samples it is necessary to have volume charge accumulations at interfaces within the sample and at the electrode sample interface. A method for measuring heterogeneous dielectrics with non-negligible ohmic and dielectric conductivities is proposed and experimentally verified.

Morrison, H.↗
NASA NTRS1994

Planar varactor frequency multiplier devices with blocking barrier

The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.

Lieneweg, Udo↗