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DOE OSTI2020

On the redistribution of charge in La 0.7 Sr 0.3 CrO 3 /La 0.7 Sr 0.3 MnO 3 multilayer thin films

The atomic and electronic structures of La 0.7 Sr 0.3 MnO 3 (LSMO)/La 0.7 Sr 0.3 CrO 3 (LSCO) multilayer thin films are investigated using aberration corrected scanning transmission electron microscopy (STEM) imaging and spectroscopy. Atomic resolution high angle annular dark-field reveals that LSMO layers have an expanded out-of-plane lattice parameter compared to compressed LSCO layers, contrasting with x-ray diffraction measurements. The expansion is found to result from preferential oxygen vacancy formation in LSMO during STEM sample preparation as determined by electron energy-loss spectroscopy. The La/Sr atom column intensity is also found to oscillate by about 4% between the LSMO and LSCO layers, indicative of La/Sr concentration variation. Using energy-dispersive x-ray spectroscopy in combination with image simulations, we confirm the La/Sr inhomogeneity and elucidate the origin of charge redistribution within the multilayer. These results illuminate the sensitivity of the technique to subtle structural, chemical, and electronic features that can arise to compensate charge imbalances in complex oxide heterostructures.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Broad-range tuning of ferroelectric switching of La x Bi 1−x FeO 3 epitaxial films via digital doping using off-axis co-sputtering

To investigate the scope of ferroelectric behavior in La-substituted BiFeO 3 films, La x Bi 1−x FeO 3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO 3 (001) and DyScO 3 (110) substrates with a SrRuO 3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi 1−x FeO 3 films across a wide range of x = 0.05–0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi 1−x FeO 3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2019

X-ray nanodiffraction studies of ionically controlled nanoscale phase separation in cobaltites

Complex oxide heterostructures provide access to emergent functional and structural phases that are not present in the bulk constituent materials. In this Rapid Communication, we focus on $La_{0.67}Sr_{0.33}CoO_3$ (LSCO)/Gd heterostructures due to the high oxygen ion conductivity, as well as the coupled magnetic and electronic properties of LSCO, which are strongly dependent on the oxygen stoichiometry. This combination of properties enables the ionic control of the functional properties of LSCO thin films through the presence of oxygen getter layers such as Gd.We utilize x-ray nanodiffraction to directly image the nanoscale morphology of LSCO thin films as they are progressively transformed from the equilibrium perovskite phase to the metastable brownmillerite (BM) phase with increasing Gd thickness. Our studies show the coexistence of perovskite and BM phases with a critical oxygen vacancy concentration threshold which leads to the formation of extended BM filaments. In addition to lateral phase separation, we observed phase separation within the film thickness possibly due to pinning of the perovskite and BM phases by the substrate/LSCO and LSCO/Gd interface, respectively. Our studies provide a nanoscale survey of the phase separation in the cobaltites and shed light on the formation of the metastable BM phase.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Giant anisotropic magnetoresistance in oxygen-vacancy-ordered epitaxial La 0.5 Sr 0.5 CoO 3–δ films

Recent advances in complex oxide heterostructures have realized extraordinary control over oxygen vacancies ($V_\text{O}$), including strain-tuned $V_\text{O}$ order, and electric-field-controlled transformations between perovskite and $V_\text{O}$-ordered structures. Perovskite cobaltites such as La 1– x Sr x CoO 3–δ provide a prime example, recent work demonstrating that strain engineering of $V_\text{O}$ ordering induces large (~10 7 erg/cm 3 ) perpendicular magnetic anisotropy. Here we show that $V_\text{O}$-ordered epitaxial La 0.5 Sr 0.5 CoO 3–δ films exhibit not only strong magnetic anisotropy, but also a giant form of anisotropic magnetoresistance (AMR). This has magnetic field, temperature, and angular dependencies in quantitative accord with conventional AMR, but with AMR ratios up to an extraordinary 40.3%, 20 times enhanced over bulk cobaltites, and ~10–100 times larger than typical transition metals. This giant AMR has no strong dependence on heteroepitaxial strain (between –2.1% and +1.8%) or thickness, and is instead ascribed to symmetry lowering associated with $V_\text{O}$ ordering. The AMR ratios thus obtained in this work are among the largest reported in the over 160-year history of this phenomenon, despite the absence of heavy elements.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next‐generation electronics. While the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the substrate, limiting access to this functionality. Here, we demonstrate how the LAO/STO heterostructure, in membrane form, can be flipped and precisely positioned on silicon and other platforms using polymer‐free micromanipulation. The transferred membranes preserve atomically smooth surfaces, high crystallinity, and key electronic properties. Through the 44‐nm insulating STO layer, ultra‐low‐voltage electron‐beam lithography (ULV‐EBL) writes conductive nanostructures at the now‐accessible STO/LAO interface, offering the potential to function as programmable local gates that modulate charge carriers in the underlying silicon. The platform establishes a general strategy for integrating complex oxide heterostructures with semiconductors, quantum materials, and flexible substrates, enabling new architectures for reprogrammable nanoelectronic devices.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Magnetism of Complex Oxide Interfaces

This chapter reviews theoretical studies focused on interfaces or heterostructures of complex oxides such as perovskite transition-metal oxides (TMO). It describes examples of such theoretical studies of TMO interfaces employing a variety of methods. The chapter explains theoretical work at the interfaces of a ferroelectric and a magnetic manganite and provides rules to judge the type of coupling between the spins at opposite sides of the interfaces. It shows how the electric field of the ferroelectric component affects the electronic density of the other component, typically a metallic manganite, thus altering its transport properties and sometimes even inducing a phase transition. The chapter explores the puzzling exchange bias effect is addressed for the interfaces involving a ferromagnet on one side and a G-type antiferromagnetic state on the other. If the interfacial carrier density is modulated away from the region, the ferromagnetism and transport will become worse.

Okamoto, Satoshi↗

DOE OSTI2020

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Eom, Chang-Beom↗

DOE OSTI2023

Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Eom, Chang-Beom↗

DOE OSTI2024

X-ray photoelectron spectroscopy of epitaxial films and heterostructures

X-ray photoelectron spectroscopy is a powerful experimental technique that yields invaluable information on a range of phenomena that occur in solids, liquids, and gasses. The binding energy and shape of a photoemission peak is sensitive not only to the atomic number, valence and orbital from which the electron is ejected, but also to complex many-body effects that accompany photoemission. Provided the influences of these different drivers of spectral line shapes can be disentangled, a great deal can be learned about the electronic structures of specific atoms in the material of interest. In addition to these largely local effects, the long-range electrostatic environment and resulting electric potential at the emitting atom have a direct effect on the measured binding energies. Furthermore, this fact opens the door to extracting information about the dependence of the valence and conduction band minima on depth below the surface, which in turn allows both vertical and lateral electrical transport data to be better understood. One purpose of this Report is to describe how the different physical forces described above impact spectral properties of complex oxide epitaxial films. This class of materials typically incorporates transition metal cations in different valences and of all the elements, these exhibit the most complex core-level spectra. A second purpose is to show how a comprehensive understanding of local physical effects in x-ray photoemission allows one to extract detailed information on internal electric fields and band edge discontinuities in heterostructures involving complex oxides from core-level line shapes.

47 OTHER INSTRUMENTATION↗

DOE OSTI2019

Interface-engineered hole doping in Sr 2 IrO 4 /LaNiO 3 heterostructure

The relativistic Mott insulator Sr 2 IrO 4 driven by large spin-orbit interaction is known for the J eff = 1/2 antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr 2 IrO 4 by means of interfacial charge transfer in Sr 2 IrO 4 /LaNiO 3 heterostructures. X-ray photoelectron spectroscopy on Ir 4f edge along with the x-ray absorption spectroscopy at Ni L 2 edge confirmed that 5d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface. Although the Sr 2 IrO 4 /LaNiO 3 heterostructure remains non-metallic, we reveal that the transport behavior is no longer described by the Mott variable range hopping mode, but by the Efros-Shklovskii model. These findings highlight a powerful utility of interfaces to realize emerging electronic states of the Ruddlesden-Popper phases of Ir-based oxides.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Ultrafast Terahertz Field Control of the Emergent Magnetic and Electronic Interactions at Oxide Interfaces

Ultrafast electric-field control of emergent electronic and magnetic states at oxide interfaces offers exciting prospects for the development of the next generation of energy-efficient devices. Here, it is demonstrated that the electronic structure and emergent ferromagnetic interfacial state in epitaxial LaNiO3/CaMnO3 superlattices can be effectively controlled using intense, single-cycle THz electric-field pulses. A suite of advanced X-ray spectroscopic techniques is employed to measure a detailed magneto-optical profile and the thickness of the ferromagnetic interfacial layer. Then, a combination of time-resolved and temperature-dependent optical measurements is used to disentangle several correlated electronic and magnetic processes driven by ultrafast, high-field THz pulses. Sub-picosecond non-equilibrium Joule heating of the electronic system is observed, ultrafast demagnetization of the ferromagnetic interfacial layer, and slower dynamics indicative of a change in the magnetic state of the superlattice due to the transfer of spin-angular momentum to the lattice. These findings suggest a promising avenue for the efficient control of 2D ferromagnetic states at oxide interfaces using ultrafast electric-field pulses.

X-ray spectroscopy and scattering↗

DOE OSTI2020

Effects of Anisotropic Strain on Spin–Orbit Torque Produced by the Dirac Nodal Line Semimetal IrO 2

We report spin-torque ferromagnetic resonance studies of the efficiency of the damping-like (ξ DL ) spin–orbit torque exerted on an adjacent ferromagnet film by current flowing in epitaxial (001) and (110) IrO 2 thin films. IrO 2 possesses Dirac nodal lines (DNLs) in the band structure that are gapped by spin–orbit coupling, which could enable a very high spin Hall conductivity, σ SH . We find that the (001) films do exhibit exceptionally high ξ DL ranging from 0.45 at 293 K to 0.65 at 30 K, which sets the lower bounds of σ SH to be 1.9 × 10 5 and 3.75 × 10 5 Ω –1 m –1 , respectively, 10 times higher and of opposite sign than the theoretical prediction. Furthermore, ξ DL and σ SH are substantially reduced in anisotropically strained (110) films. Here, we suggest that this high sensitivity to anisotropic strain is because of changes in contributions to σ SH near the DNLs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Breaking electron pairs in the pseudogap regime of SmTiO 3 − SrTiO 3 − SmTiO 3 quantum wells

The strongly correlated two-dimensional electron liquid within SmTiO 3 /SrTiO 3 /SmTiO 3 quantum well structures exhibits a pseudogap phase when the quantum well width is sufficiently narrow. Using low-temperature transport and optical experiments that drive the quantum-well system out of equilibrium, we find evidence of mobile, long-lived, negatively charged quasiparticles, consistent with the idea that the pseudogap phase arises from strongly bound electron pairs. As a result, these experimental results establish a connection between quantum confinement and enhanced electron pairing, which may provide a pathway to higher-temperature superconductors.

Correlated electronics↗

DOE OSTI2021

Develop On-Demand nanoplasmonic Device Concepts in a Semiconductor Compatible Hybrid System. Final Report

This report summarizes the research activities supported by the U.S. Department of Energy grant DE-SC-0010399. The goal of this project is to is to develop an on-demand nanoplasmonic platform that combines emerging oxide nanoelectronics with a low-loss semiconductor-friendly plasmonic materials. Toward this goal, several unique heterostructures formed between complex oxides and 2D layered materials have been developed. Based on these material systems, a set of atomic force microscope (AFM) based techniques have been developed that can allow long-living and reversible material phase transitions to be manipulated in nanoscale at room temperature. Using such technique and through interface coupling, we can effectively tune the plasmon propagations in unconventional plasmonic materials such as graphene and VO 2 . In addition, we also discovered a plethora of novel interface enabled electro-optic effects, including the spatial modulation of light using 2DEG, a giant programmable photothermoelectric effects at room temperature, a light induced superconducting transition, and a tunable giant third order optical nonlinearities. These major results are outlined in this report, along with lists of project participants and products.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

Charge Disproportionation at Twisted SrTiO 3 Bilayer Interface Driven by Local Atomic Registry

The interplay of lattice, orbital, and charge degrees of freedom in complex oxide materials has hosted a plethora of exotic quantum phases and physical properties. Recent advances in the synthesis of freestanding complex oxide membranes and twisted heterostructures assembled from membranes provide diverse opportunities for discovery using moiré design with local lattice control. To this end, we designed moiré crystals at the coincidence site lattice condition, providing commensurate structure within the moiré supercell arising from the multiatom complex oxide unit cell. We fabricated such twisted bilayers from freestanding SrTiO 3 membranes and used depth-sectioning-based electron microscopic methods to investigate ordered charge states at the moiré interface. By selectively imaging SrTiO 3 atomic planes at different depths through the bilayer, we clearly resolved the moiré periodic structure at the twisted interface and found that it exhibits lattice-dependent charge disproportionation in the local atomic registry within the moiré supercell. Density functional modeling of the twisted oxide interface predicts that these moiré phenomena are accompanied by a two-dimensional flat band that can drive exceptional electronic phases. Our work provides a robust strategy for controlling moiré periodicity in twisted oxides and paves pathways to exploit the extraordinary functionalities via moiré lattice-driven charge-orbital correlation.

charge disproportionation↗

DOE OSTI2021

Freestanding Ferroelectric Bubble Domains

Bubble-like domains, typically a precursor to the electrical skyrmions, arise in ultrathin complex oxide ferroelectric-dielectric-ferroelectric heterostructures epitaxially clamped with flat substrates. Here, it is reported that these specially ordered electric dipoles can also be retained in a freestanding state despite the presence of inhomogeneously distributed structural ripples. By probing local piezo and capacitive responses and using atomistic simulations, this study analyzes these ripples, sheds light on how the bubbles are stabilized in the modified electromechanical energy landscape, and discusses the difference in morphology between bubbles in freestanding and as-grown states. Furthermore, these results are anticipated to be the starting point of a new paradigm for the exploration of electric skyrmions with arbitrary boundaries and physically flexible topological orders in ferroelectric curvilinear space.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Investigation of the Current–Voltage Characteristics of New MnO{sub 2}/GaAs(100) and V{sub 2}O{sub 5}/GaAs(100) Heterostructures Subjected to Heat Treatment

Complex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V{sub 2}O{sub 5} and MnO{sub 2} nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage (I–V) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V{sub 2}O{sub 5} facilitates the more intense (in comparison with MnO{sub 2}) chemical bonding of arsenic at the internal interface with the formation of As{sub 2}O{sub 5}. As a result, thermally oxidized V{sub 2}O{sub 5}/GaAs heterostructures exhibit higher breakdown voltages.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗