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Disclosed is a thermally-stable SnO2-surfaced polyimide film wherein the electrical conductivity of the SnO2 surface is within the range of about 3.0 x 10(exp -3) to about 1 x 10(exp -2) ohms(exp -1). Also disclosed is a method of preparing this film from a solution containing a polyamic acid and SnCl4 (DMSO)2.
A method for fabricating a piezoelectric macro-fiber composite actuator comprises providing a piezoelectric material that has two sides and attaching one side upon an adhesive backing sheet. The method further comprises slicing the piezoelectric material to provide a plurality of piezoelectric fibers in juxtaposition. A conductive film is then adhesively bonded to the other side of the piezoelectric material, and the adhesive backing sheet is removed. The conductive film has first and second conductive patterns formed thereon which are electrically isolated from one another and in electrical contact with the piezoelectric material. The first and second conductive patterns of the conductive film each have a plurality of electrodes to form a pattern of interdigitated electrodes. A second film is then bonded to the other side of the piezoelectric material. The second film may have a pair of conductive patterns similar to the conductive patterns of the first film.
Split-ring antennas made from optically transparent, electrically conductive films have been invented for applications in which there are requirements for compact antennas capable of operation over much or all of the frequency band from 1 to 10 GHz. Primary examples of such applications include wireless local-area networks and industrial, scientific, and medical (ISM) applications. These antennas can be conveniently located on such surfaces as those of automobile windows and display screens of diverse hand-held electronic units. They are fabricated by conventional printed-circuit techniques and can easily be integrated with solid-state amplifier circuits to enhance gain. The structure of an antenna of this type includes an antenna/feed layer supported on the top or outer face of a dielectric (e.g., glass) and, optionally, a ground layer on the bottom or inner face of the substrate. The ring can be in the form of either a conductive strip or a slot in the antenna/feed layer. The ring can be of rectangular, square, circular, elliptical, or other suitable shape and can be excited by means of a microstrip, slot line, or coplanar waveguide. For example, the antenna shown in the figure features a square conductive-strip split ring with a microstrip feed. In general, an antenna fed at its external boundary in the manner of this invention presents very high impedance, thereby creating an impedance-matching problem. Splitting the ring . that is, cutting a notch through the ring . offers a solution to the problem in that the notch fixes the location of maximum electric field, which location is directly related to the impedance. Thus, an excellent impedance match can be achieved through proper choice of the location of the notch. In geometric layout, such a ring antenna structure is typically between 1.4 and 1.3 the size of a patch antenna capable of operating in the same frequency range. This miniaturization of the antenna is desirable, not only because it contributes to overall miniaturization of equipment, but also because minimization of the extent of the optically transparent, electrically conductive film helps to minimize the electrical loss associated with the surface resistance ( 5 ohms per square) of the transparent, electrically conductive film material. Incidentally, even at 5 ohms per square, this surface resistance is significantly less than that of indium tin oxide film (typically > 25 ohms per square), which, heretofore has been the transparent, electrically conductive film material of choice. At the time of writing this article, information on the composition of the lower-resistance film used in the antennas of this invention was not available.
An electrically conductive, thermooxidatively stable poltimide, especially a film thereof, is prepared from an intimate admixture of a particular polyimide and gold (III) ions, in an amount sufficient to provide between 17 and 21 percent by weight of gold (III) ions, based on the weight of electrically conductive, thermooxidatively stable polyimide. The particular polyimide is prepared from a polyamic acid which has been synthesized from a dianhydride/diamine combination selected from the group consisting of 3,3',4,4'-benzophenonetetracarboxylic dianhydride and 2,2-bis[4-(4 -aminophenoxy)phenyl]hexafluoropropane; 3,3',4,4'-benzophenonetetracarboxylic dianhydride and 4,4'-oxydianiline; 2,2'-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride and 4,4'-oxydianiline; and 3,3'4,4'-benzophenonetetracarboxylic dianhydride and 2,2-bis(3-aminophenyl)hexafluoropropane.
A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.
A method for fabricating a piezoelectric macro-fiber composite actuator comprises making a piezoelectric fiber sheet by providing a plurality of wafers of piezoelectric material, bonding the wafers together with an adhesive material to from a stack of alternating layers of piezoelectric material and adhesive material, and cutting through the stack in a direction substantially parallel to the thickness of the stack and across the alternating layers of piezoelectric material and adhesive material to provide at least one piezoelectric fiber sheet having two sides comprising a plurality of piezoelectric fibers in juxtaposition to the adhesive material. The method further comprises bonding two electrically conductive films to the two sides of the piezoelectric fiber sheet. At least one conductive film has first and second conductive patterns formed thereon which are electrically isolated from one another and in electrical contact with the piezoelectric fiber sheet.
This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.
We present a simple experimental scheme for estimating the cryogenic thermal transport properties of thin films using superconducting nanowires. In a parallel array of nanowires, the heat from one nanowire in the normal state changes the local temperature around adjacent nanowires, reducing their switching current. Calibration of this change in switching current as a function of bath temperature provides an estimate of the temperature as a function of displacement from the heater. This provides a method of determining the contribution of substrate heat transport to the cooling time of superconducting nanowire single photon detectors. Understanding this process is necessary for successful electrothermal modeling of superconducting nanowire systems.
The development is described of a laboratory model oxygen partial pressure sensor using a sputtered zinc oxide thin film. The film is operated at about 400 C through the use of a miniature silicon bar. Because of the unique resistance versus temperature relation of the silicon bar, control of the operational temperature is achieved by controlling the resistance. A circuit for accomplishing this is described. The response of sputtered zinc oxide films of various thicknesses to oxygen, nitrogen, argon, carbon dioxide, and water vapor caused a change in the film resistance. Over a large range, film conductance varied approximately as the square root of the oxygen partial pressure. The presence of water vapor in the gas stream caused a shift in the film conductance at a given oxygen partial pressure. A theoretical model is presented to explain the characteristic features of the zinc oxide response to oxygen.
Sunlight is dispersed over a diffraction grating formed on the surface of a conducting film on a substrate. The angular dispersion controls the effective grating period so that a matching spectrum of surface plasmons is excited for parallel processing on the conducting film. The resulting surface plasmons carry energy to an array of inelastic tunnel diodes. This solar energy converter does not require different materials for each frequency band, and sunlight is directly converted to electricity in an efficient manner by extracting more energy from the more energetic photons.
Electrochemical studies indicate that poly(Isothianaphthene) or PITN, can be p-doped only. Electrochemical properties of PITN and Nafion-PITN in acetonitrile solutions containing tetra-phenyl Phosphonium chloride as supporting electrolyte are compared. In both cases, the electrochemical behavior of thin films are different from that of thick films. In addition, Nafion does not seem to alter the electrochemical properties of PITN. Cyclic voltammetric and chronocoulometric measurements were made to compute the diffusion coefficient of the counter ions. Electrochemical behavior of both PITN and Nafion-PITN in acetonitrile solution containing different counter ions are described. PITN, when electrochemically deposited, apparently neither passivates surface states present nor forms ohmic contacts with p-Si or p(+)Si single-crystal electrodes.
We conducted this film test to evaluate several manufacturers' photographic films for their ability to acquire imagery on the International Space Station. We selected 25 motion picture, photographic slide, and negative films from three different film manufacturers. We based this selection on the fact that their films ranked highest in other similar film tests, and on their general acceptance by the international community. This test differed from previous tests because the entire evaluation process leading up to the final selection was based on information derived after the original flight film was scanned to a digital file. Previously conducted tests were evaluated entirely based on 8 x 10s that were produced from the film either directly or through the internegative process. This new evaluation procedure provided accurate quantitative data on granularity and contrast from the digital data. This test did not try to define which film was best visually. This is too often based on personal preference. However, the test results did group the films by good, marginal, and unacceptable. We developed, and included in this report, a template containing quantitative, graphical, and visual information for each film. These templates should be sufficient for comparing the different films tested and subsequently selecting a film or films to be used for experiments and general documentation on the International Space Station.
Thin transparent films of In2O3 or In2O3 + SnO2 prepared by evaporation or sputtering have been tested for use as surface layers for spacecraft temperature control coatings. The films are intended to prevent nonuniform electric charge buildup on the spacecraft exterior. Film thicknesses of 300 to 500 A were found to be optimal in terms of durability and minimum impact on the solar absorptance and the thermal emissivity of the underlayers. As a verification of their suitability for long-duration space missions, the films were subjected to simulated solar UV plus proton irradiation in a vacuum.
Semiconducting surfaces of SnO2 formed by curing polyamic acids containing tin complexes. Polyimide films made semiconductive via incorporation of semiconductive surface layers of SnO2. If SnO2-surfaced polyimide film used as free-standing film, then semiconductive layer protected by top coat of polyimide, deposited as film from solution directly onto SnO2. Resultant films flexible and resistant to both weather and high temperature. Used on aircraft to provide resistance to lightning strikes, and in microelectronics and flexible circuitry.
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Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.
Mechanically strong, flexible, thermally stable, electrically conductive films and coatings suitable for use in electronics industry made by incorporating silver trifluoroacetylacetonate into linear aromatic condensation polyimides. In experimental films, most successful combinations of flexibility and conductivity obtained by use of 1:1, 1:1.74, and 1:2 mole ratios of silver trifluoroacetylacetonate per polyimide repeat unit. Other concentrations of silver trifluoroacetylacetonate used with different heat-treatment schedules to obtain conductive silver-impregnated films.
The use of reactive dc magnetron cosputtering of Zn and the dopant In in an H2Se/Ar gaseous mixture is described. It is observed that initial deposition using pure Zn targets produced yellowish transparent ZnSe films on glass with a film resistivity of 10 to the 8th ohms cm and deposition using a Zn target doped with a fixed 1 percent of In produced ZnSe films with resistivities of about 10,000 ohms cm. The improvement of film conductivity by optimizing the In content in the ZnSe films is discussed; the ZnSe resistivity dependence on In flux is studied. Optical absorption/transmission measurements reveal a photon energy band gap of 2.65 eV at room temperature and X-ray diffraction show highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film. Compositional analysis was performed and the Zn/Se ratio is measure as 48.8/49.0 with an In concentration of 1.16 percent. ZnSe films deposited on glass and conducting SnO2-coated glass substrates with a resistance of 20 ohms cm and a substrate temperature of 120 C have been fabricated.