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At least 37 records · Page 2

Crystal chemical effects on the partitioning of trace elements between mineral and melt - An experimental study of melilite with applications to refractory inclusions from carbonaceous chondrites

Results are presented on the partitioning experiments for trace elements Be, Sc, Ba, La, Ce, and Tm between melilite and melt for a bulk composition relevant to Type B inclusions, using a technique, described by Brody and Flemings (1966), by which distributon coeffecients can be obtained over the entire range of crystallization from trace element analysis of a single zoned crystal. Zoned crystals of melilite were grown during controlled cooling rate experiments, and trace element concentrations were determined by SIMS. At each step in the crystal growth, trace element concentrations in the coexisting melt were determined by mass balance, using stepwise integration of a Rayleigh fractionation equation.

Beckett, John R.↗

Thermocapillary convection in zone-melting crystal growth - An open-boat physical simulation

Thermocapillary convection in a molten zone of NaNO3 contained in a boat with a free horizontal surface, that is heated from above by a centered wire heater, was studied to simulate flow in zone-melting crystal growth. Using a laser-light-cut technique and fine SiO powder as a tracer, convection in the melt zone was visualized in two different cases. In the first case, the entire melt surface was free, while in the second the melt surface was free only in the immediate vicinity of one vertical wall and was covered elsewhere, this wall being to simulate the melt/crystal interface during crystal growth. It was observed that thermocapillary convection near this wall prevailed in the first case, but was reduced significantly in the second. Since thermocapillary rather than natural convection dominated in the melt, the effect of the partial covering of the melt surface on thermocapillary convection in the melt observed in this study is expected to be similar under microgravity.

Kim, Y. J.↗

Stability and instability of thermocapillary convection in models of the float-zone crystal-growth process

This project was concerned with the determination of conditions of guaranteed stability and instability for thermocapillary convection in a model of the float-zone crystal-growth process. This model, referred to as the half-zone, was studied extensively, both experimentally and theoretically. Our own earlier research determined, using energy-stability theory, sufficient conditions for stability to axisymmetric disturbances. Nearly all results computed were for the case of a liquid with Prandtl Number Pr = 1. Attempts to compute cases for higher Prandtl numbers to allow comparison with the experimental results of other researchers were unsuccessful, but indicated that the condition guaranteeing stability against axisymmetric disturbances would be a value of the Marangoni number (Ma), significantly higher than that at which oscillatory convection was observed experimentally. Thus, additional results were needed to round out the stability picture for this model problem. The research performed under this grant consisted of the following: (1) computation of energy-stability limits for non-axisymmetric disturbances; (2) computation of linear-stability limits for axisymmetric and non-axisymmetric disturbances; (3) numerical simulation of the basic state for half- and full-zones with a deformable free surface; and (4) incorporation of radiation heat transfer into a model energy-stability problem. Each of these is summarized briefly below.

Neitzel, G. P.↗

Contactless heater floating zone refining and crystal growth

Floating zone refining or crystal growth is carried out by providing rapid relative rotation of a feed rod and finish rod while providing heat to the junction between the two rods so that significant forced convection occurs in the melt zone between the two rods. The forced convection distributes heat in the melt zone to allow the rods to be melted through with a much shorter melt zone length than possible utilizing conventional floating zone processes. One of the rods can be rotated with respect to the other, or both rods can be counter-rotated, with typical relative rotational speeds of the rods ranging from 200 revolutions per minute (RPM) to 400 RPM or greater. Zone refining or crystal growth is carried out by traversing the melt zone through the feed rod.

Kou, Sindo↗

A numerical treatment of melt/solid segregation - Size of the eucrite parent body and stability of the terrestrial low-velocity zone

Crystal sinking to form cumulates and melt percolation toward segregation in magma pools can be treated with modifications of Stokes' and Darcy's laws, respectively. The velocity of crystals and melt depends, among other things, on the force of gravity (g) driving the separations and the cooling time of the environment. The increase of g promotes more efficient differentiation, whereas the increase of cooling rate limits the extent to which crystals and liquid can separate. The rate at which separation occurs is strongly dependent on the proportion of liquid that is present. The observation of cumulates and segregated melts among the eucrite meteorites is used as a basis for calculating the g (and planet size) required to perform these differentiations. The eucrite parent body was probably at least 10-100 km in radius. The earth's low velocity zone (LVZ) is shown to be unstable with respect to draining itself of excess melt if the melt forms an interconnecting network. A geologically persistent LVZ with a homogeneous distribution of melt can be maintained with melt fractions only on the order of 0.1% or less.

Walker, D.↗

Energy stability of thermocapillary convection in a model of the float-zone crystal-growth process. II - Nonaxisymmetric disturbances

Energy-stability theory has been applied to investigate the stability properties of thermocapillary convection in a half-zone model of the float-zone crystal-growth process. An earlier axisymmetric model has been extended to permit nonaxisymmetric disturbances, thus determining sufficient conditions for stability to disturbances of arbitrary amplitude. The results for nonaxisymmetric disturbances are compared with earlier axisymmetric results, with linear-stability results for a geometry with an infinitely long aspect ratio and with stability boundaries from recent laboratory experiments.

Neitzel, G. P.↗

Energy stability of thermocapillary convection in a model of the float-zone crystal-growth process

Energy stability theory has been applied to a basic state of thermocapillary convection occurring in a cylindrical half-zone of finite length to determine conditions under which the flow will be stable. Because of the finite length of the zone, the basic state must be determined numerically. Instead of obtaining stability criteria by solving the related Euler-Lagrange equations, the variational problem is attacked directly by discretization of the integrals in the energy identity using finite differences. Results of the analysis are values of the Marangoni number below which axisymmetric disturbances to the basic state will decay, for various values of the other parameters governing the problem.

Shen, Y.↗

The Science of Detached Bridgman Growth and Solutocapillary Convection in Solid Solution Crystals

Bridgman and Float-zone crystal growth experiments are planned for NASA's First Materials Science Research Rack using the European Space Agency's Materials Science Laboratory with the Low Gradient Furnace (LGF) and Float Zone Furnace with Rotating Magnetic Field (FMF) inserts, respectively. Samples will include germanium and germanium-silicon alloys with up to 10 atomic percent silicon. The Bridgman part of the investigation includes detached growth samples and so there will be a solid-liquid-gas tri-junction in those experiments just as there will be in all float-zone experiments. There are other similarities as well as significant differences between the types of growth that will be discussed. The presentation will call attention to the reasons that experiments in microgravity will provide information unattainable from Earth-based experiments.

Szofran, F. R.↗

Measurement of Microscopic Growth Rates in Float-Zone Silicon Crystals

Time dependent convective flows during crystal growth of doped semiconductors lead to fluctuations of the composition, so called dopant striations. In general, it is difficult to decide which is the main mechanism for the generation of these striations, it might be either the fluctuation of the concentration field in the melt and the extent of the solute boundary layer ahead of the solid-liquid interface or a variation of the growth velocity. Direct access to the concentration field is rather complicated to achieve, especially considering the high process temperature and the chemical activity of liquid silicon. The contribution of growth rate fluctuations to the formation of compositional fluctuations can be determined by measuring microscopic growth rates. The classical method of current pulses requires electrical feed-throughs and good electrical contacts, both are critical issues for the growth of high purity silicon crystals. Using a radiation based heating system, the heating power can be modulated very fast and effectively. We added to the normal heater power a sinusoidal off-set in the frequency range of 1 to 10 Hz, generating a narrow spaced weak rippling in the grown crystals which are superposed to the dopant striations caused by natural and by thermocapillary convection. The pulling speed was varied between 1 and 4mm/min. The microscope images of etched crystals slices have been analyzed by peak-search algorithms (measuring the spacing between each artificially induced marker) and by FFT. Performing growth experiments under a time-dependent flow regime, fluctuations of the microscopic growth velocity of Delta(v)/v(sub average) up to 50% have been measured. Damping the time-dependent convection by the use of an axial, static magnetic field of 500mT, the microscopic growth rate became constant within the resolution limit of this method. The results will be discussed using analytical methods for the calculation of microscopic growth velocity and by comparing them with measurements of temperature fluctuations in the melt during growth experiments itself.

Dold, P.↗

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗

Thermal-capillary analysis of small-scale floating zones Steady-state calculations

Galerkin finite element analysis of a thermal-capillary model of the floating zone crystal growth process is used to predict the dependence of molten zone shape on operating conditions for the growth of small silicon boules. The model accounts for conduction-dominated heat transport in the melt, feed rod and growing crystal and for radiation between these phases, the ambient and a heater. Surface tension acting on the shape of the melt/gas meniscus counteracts gravity to set the shape of the molten zone. The maximum diameter of the growing crystal is set by the dewetting of the melt from the feed rod when the crystal radius is large. Calculations with small Bond number show the increased zone lengths possible for growth in a microgravity environment. The sensitivity of the method to the shape and intensity of the applied heating distribution is demonstrated. The calculations are compared with experimental observations.

Duranceau, J. L.↗

Microgravity Silicon Zoning Investigation

This research program is directed toward the understanding of the float zone crystal growth process, the melt interactions which lead to crystal inhomogeneities, and the influence of microgravity on reducing these inhomogeneities. Silicon was selected as the model crystal because its inhomogeneities lead to known variations in device performance, and because the mechanisms involved in its growth are understood better than for other high temperature crystals. The objective of the program is to understand the growth mechanisms in float zone growth and thereby determine the feasibility and advantages of float zone growth of silicon under microgravity conditions. This will be done by characterizing the growth at g = 1, projecting the changes in melt flows due to microgravity, observing these in space growth and determining the effects on defective inhomogeneities. A Thin Rod Zoner was constructed as a laboratory prototype for flight growth of 5 mm diameter silicon crystals, which can be done within the power and cooling capabilities of shuttle flights. A new method of zoning silicon, using resistance heating, has resulted in melting 5 mm diameter ingots.

E L Kern↗

Thermocapillary convection instability in microgravity crystal growth

Energy and linear stability theories are applied to study the stability properties of thermocapillary convection in a half zone model of the float zone crystal growth process. The analyses yield results which provide sufficient conditions for both stability and instability, respectively, and therefore, lower and upper bounds for the Marangoni numbers at which oscillatory thermocapillary convection will appear. The results of the analyses are compared with available experimental and numerical data.

Neitzel, G. P.↗

Modelling of the MEA float zone using accelerometer data

During a floating zone experiment involving the growth of indium on a recent orbiter mission, (STS 32) oscillation of the zone shapes were observed to occur in response to the background acceleration. An understanding of the nature of the response of the zone shape to forced (g-jitter) oscillations and predictions of its impact on future experiments is of great interest not only to the PI's but to other commercial and academic investigators who plan to fly similar experiments in the orbiter and on space station. Motivated by this, a 15 month study was undertaken to analyze the nature of the g-sensitivity of the STS 32 floating zone crystal growth experiment. Numerical models were used to describe the time-dependent free surface motion of the zone as it responds to the spacecraft residual acceleration. Relevant experimental data concerning the acceleration environment was obtained from the Honeywell in Space Accelerometer (HISA) investigators through MSFC's ACAP program and processed and analyzed. For the indium floating zone experiment, a series of calculations were made using time-dependent axial accelerations g(t). The form of g(t) included simple sinusoidal disturbances as well as actual data (subject to appropriate filtering) measured on the STS 32 mission. Focus was on the calculation of the response of the free surface of the zone as well as the internal flows and internal heat transfer. The influence of solidification on the response of the zone shape was also examined but found to be negligible.

Alexander, J. Iwan D.↗

The control of float zone interfaces by the use of selected boundary conditions

The main goal of the float zone crystal growth project of NASA's Materials Processing in Space Program is to thoroughly understand the molten zone/freezing crystal system and all the mechanisms that govern this system. The surface boundary conditions required to give flat float zone solid melt interfaces were studied and computed. The results provide float zone furnace designers with better methods for controlling solid melt interface shapes and for computing thermal profiles and gradients. Documentation and a user's guide were provided for the computer software.

Foster, L. M.↗

Power requirements for space crystal growth

The need for power to grow silicon of a size suitable to make into devices is addressed. The expected results are tied to available power. The projection of the size of float zone crystals as a function of time is discussed. An accompanying graph shows that 4 in. will be the normally used diameter by 1985 and 5 in. by 1990. Material to be tested in device lines in this time frame should be 4 in. or more. The various power losses, 25 kW with a 50% power efficiency, which is much improved over present RF heating efficiencies.

Kern, E. L.↗

Solar energy concentrator system for crystal growth and zone refining in space

The technological feasibility of using solar concentrators for crystal growth and zone refining in space has been performed. Previous studies of space-deployed solar concentrators were reviewed for their applicability to materials processing and a new state-of-the-art concentrator-receiver radiation analysis was developed. The radiation analysis is in the form of a general purpose computer program. It was concluded from this effort that the technology for fabricating, orbiting and deploying large solar concentrators has been developed. It was also concluded that the technological feasibility of space processing materials in the focal region of a solar concentrator depends primarily on two factors: (1) the ability of a solar concentrator to provide sufficient thermal energy for the process and (2) the ability of a solar concentrator to provide a thermal environment that is conductive to the processes of interest. The analysis indicate that solar concentrators can satisfactorily provide both of these factors.

Mcdermit, J. H.↗