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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Nondestructive property and defect characterization using X-rays and neutrons

As advanced manufacturing (AM) continues to mature as a fabrication technique, interest in its use for the fabrication of nuclear components continues to grow. AM nuclear parts offer the ability to create parts with complex and non-standard geometries that cannot be produced using traditional manufacturing techniques, circumvention of supply chain issues, and reduction of time from design to implementation. However, components fabricated with AM techniques must undergo nondestructive examination (NDE) to ensure they are fabricated to the required specifications to ensure safe and proper operation. The Advanced Materials and Manufacturing Technologies (AMMT) program has undertaken initial exploratory studies on several NDE techniques to evaluate their feasibility for research and development (R&D), as well as Quality Assurance and Quality Control (QA/QC), and in-service inspections of AM parts. This work describes research results on several techniques, including X-ray and neutron tomography and scattering, as well as photothermal radiometry. The experimental results are described and an overview for each techniques’ potential use on AM parts in the various phases of part development and lifetime is given. Finally, future directions for technique development and application to AM nuclear components are described.

36 MATERIALS SCIENCE↗
NASA NTRS2000

Defect Characterization in a Thin Walled Composite RP-1 Tank: A Case Study

A full scale thin walled composite tank, designed and fabricated for the storage of pressurized RP- I rocket fuel, was fully inspected with digital infrared thermography (IR) during assembly and prior to proof testing. The tank featured a "pill capsule" design with the equatorial bondline being overwrapped on both the inner and outer surfaces. A composite skirt was bonded to the aft dome of the tank to serve as a structural support when the tank was stood on end in service. Numerous anomalies were detected and mapped prior to proof testing, some along bondlines and some scattered throughout the acreage. After the tank was intentionally burst, coupons were cut from the regions including thermographic anomalies. These coupons were again inspected thermographically to document the growth of any indications due to proof testing. Ultrasonic inspections (UT) were also performed on the coupons for comparison to thermography. Several coupons were dissected and micrographed. Relationships between IR and UT indications and the physical nature of the dissected material are presented.

Langsing, Matthew D.↗
DOE OSTI2021

Optical Characterization of Defects in High-Efficiency (Ag,Cu)(In,Ga)Se2

We applied time-resolved photoluminescence (TRPL) spectroscopy to study optimized chalcopyrite (Ag,Cu)(In,Ga)Se2 thin films. The device shows power conversion efficiency of 18.7%. The metastable defect VSe-VCu within ACIGS at EV+0.98 eV is detected in sub-bandgap TRPL excitation spectra. TRPL lifetime of 50 ns is limited by the density of mid-gap defects such as CuGa or CuIn. The similarity of TRPL dynamics before and after light soaking indicates the optimized ACIGS thin film is less metastable because the density of VCu-VSe defect is reduced to below 10^15 cm^-3. This study indicates that ACIGS has improved cell efficiency and reliability characteristics.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2024

Simple self-consistent method for excited states in density functional theory to characterize defect-derived behavior in wide-band-gap-based microelectronic materials

This final report summarizes the results of the Laboratory Direct Research and Development (LDRD) Project Number 229740. Wide band gap semiconductors such as gallium nitride (GaN) have features highly desirable for multiple mission electronic applications. Realization of their potential requires atomic-scale understanding of electronic behavior. The principal experimental tools for electronically probing defects in GaN are chemically undifferentiating and lack a practical theoretical counterpart needed to identify and characterize specific defects. This project investigated whether a simple idea for modeling defect excited states and their associated photoluminescence (PL) energies is viable, as a path to accelerate the understanding of defect behavior and gain valuable insights into engineering new electronic materials and devices. The research implemented a non-self-consistent total-energy evaluation of a Koopmans-type estimation of an excited electronic state energy in density functional theory (DFT) calculations, and proceeded to design, implement, and assess a self-consistent method for computing excited states based upon an OCcupation-Constrained-DFT (occ-DFT). The occ-DFT was verified in test calculations of defect excited states and validated against well-characterized PL data for 3d transition metal defects in GaN. The method proved stable and robust in computing excited states and gave accurate predictions compared to experimental PL data. The combined ground state/excited-state capability proved capable of chemically differentiating defect species in GaN. In application to 3d dopants in GaN, we reinterpreted extensive experimental literature, proposed new defects as prospective candidates for use in quantum information applications, and outlined design strategies to create and exploit these potentially useful functional defects in GaN.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Characterizing crystalline defects in single nanoparticles from angular correlations of single-shot diffracted X-rays

Characterizing and controlling the uniformity of nanoparticles is crucial for their application in science and technology because crystalline defects in the nanoparticles strongly affect their unique properties. Recently, ultra-short and ultra-bright X-ray pulses provided by X-ray free-electron lasers (XFELs) opened up the possibility of structure determination of nanometre-scale matter with Å spatial resolution. However, it is often difficult to reconstruct the 3D structural information from single-shot X-ray diffraction patterns owing to the random orientation of the particles. This report proposes an analysis approach for characterizing defects in nanoparticles using wide-angle X-ray scattering (WAXS) data from free-flying single nanoparticles. The analysis method is based on the concept of correlated X-ray scattering, in which correlations of scattered X-ray are used to recover detailed structural information. WAXS experiments of xenon nanoparticles, or clusters, were conducted at an XFEL facility in Japan by using the SPring-8 Ångstrom compact free-electron laser (SACLA). Bragg spots in the recorded single-shot X-ray diffraction patterns showed clear angular correlations, which offered significant structural information on the nanoparticles. The experimental angular correlations were reproduced by numerical simulation in which kinematical theory of diffraction was combined with geometric calculations. We also explain the diffuse scattering intensity as being due to the stacking faults in the xenon clusters.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Characterizing Density and Spatial Distribution of Trap States in Ta 3 N 5 Thin Films for Rational Defect Passivation

Tantalum nitride (Ta 3 N 5 ) has gained significant attention as a potential photoanode material, yet it has been challenged by material quality issues. Defect-induced trap states are detrimental to the performance of any semiconductor material. Beyond influencing the performance of Ta 3 N 5 films, defects can also accelerate the degradation in water during desired electrochemical applications. Defect passivation has provided an enormous boost to the development of many semiconductor materials but is currently in its infancy for Ta 3 N 5 . This is in part due to a lack of experimental understanding regarding the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. Here, we employ drive-level capacitance profiling (DLCP) to experimentally resolve the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. The density of deeper energetic traps is found to reach ∼2.5 to 6 × 10 22 cm –3 at the interfaces of neat Ta 3 N 5 thin films, over an order of magnitude greater than the bulk. In addition to the spatial profile of deep trap states, we report neat Ta 3 N 5 thin films to be highly n-type in nature, owning a free carrier density of ∼9.74 × 10 17 cm –3 . This information, coupled with the present understanding of native oxide layers on Ta 3 N 5 , has facilitated the rational design of a targeted passivation strategy that simultaneously provides a means for catalyst immobilization. Loading catalyst via silatrane moieties suppresses the density of defects at the surface of Ta 3 N 5 thin films by two orders of magnitude, while also reducing the free carrier density of films by over one order of magnitude, effectively dedoping the films to ∼2.40 × 10 16 cm –3 . The surface passivation of Ta 3 N 5 films translates to suppressed defect-induced trapping and recombination of photoexcited carriers, as determined through absorption, photoluminescence, and transient photovoltage. Here, this illustrates how developing a deeper understanding of the distribution and influence of defects in Ta 3 N 5 thin films has the potential to guide future works and ultimately accelerate the integration and development of high-performance Ta 3 N 5 thin film devices.

defect passivation↗
DOE OSTI2024

Identification and Suppression of Point Defects in Bromide Perovskite Single Crystals Enabling Gamma‐Ray Spectroscopy

Abstract Methylammonium lead tribromide (MAPbBr 3 ) stands out as the most easily grown wide‐band‐gap metal halide perovskite. It is a promising semiconductor for room‐temperature gamma‐ray ( γ ‐ray) spectroscopic detectors, but no operational devices are realized. This can be largely attributed to a lack of understanding of point defects and their influence on detector performance. Here, through a combination of crystal growth design and defect characterization, including positron annihilation and impedance spectroscopy, the presence of specific point defects are identified and correlated to detector performance. Methylammonium (MA) vacancies, MA interstitials, and Pb vacancies are identified as the dominant charge‐trapping defects in MAPbBr 3 crystals, while Br vacancies caused doping. The addition of excess MABr reduces the MA and Br defects and so enables the detection of energy‐resolved γ ‐ray spectra using a MAPbBr 3 single‐crystal device. Interestingly, the addition of formamidinium (FA) cations, which converted to methylformamidinium (MFA) cations by reaction with MA + during crystal growth further reduced MA defects. This enabled an energy resolution of 3.9% for the 662 keV 137 Cs line using a low bias of 100 V. The work provides direction toward enabling further improvements in wide‐bandgap perovskite‐based device performance by reducing detrimental defects.

Ni, Zhenyi↗
DOE OSTI2020

Characterizing Dislocation Defects in Dark Field X-ray Microscopy Images of Bulk Aluminum

Material defects play a large role in material response under shock loading, yet the process of how these defects initiate, propagate, and annihilate is not well understood. Using a newly developed diagnostic, dark field X-ray microscopy (DFXM), we can now visualize the behavior of dislocation defects in materials at the mesoscale under varying conditions. Using data from the European Synchrotron Radiation Facility, we apply a variety of image processing techniques to capture relevant features to locate and characterize size and orientation of dislocation defects in bulk aluminum DFXM images. Beyond simple visualization, this analysis drives statistical characterization of the defects and their dynamic response to further improve the relevant physics models.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Two disulfide-reducing pathways are required for the maturation of plastid c -type cytochromes in Chlamydomonas reinhardtii

Abstract In plastids, conversion of light energy into ATP relies on cytochrome f, a key electron carrier with a heme covalently attached to a CXXCH motif. Covalent heme attachment requires reduction of the disulfide-bonded CXXCH by CCS5 and CCS4. CCS5 receives electrons from the oxidoreductase CCDA, while CCS4 is a protein of unknown function. In Chlamydomonas reinhardtii, loss of CCS4 or CCS5 yields a partial cytochrome f assembly defect. Here, we report that the ccs4ccs5 double mutant displays a synthetic photosynthetic defect characterized by a complete loss of holocytochrome f assembly. This defect is chemically corrected by reducing agents, confirming the placement of CCS4 and CCS5 in a reducing pathway. CCS4-like proteins occur in the green lineage, and we show that HCF153, a distant ortholog from Arabidopsis thaliana, can substitute for Chlamydomonas CCS4. Dominant suppressor mutations mapping to the CCS4 gene were identified in photosynthetic revertants of the ccs4ccs5 mutants. The suppressor mutations yield changes in the stroma-facing domain of CCS4 that restore holocytochrome f assembly above the residual levels detected in ccs5. Because the CCDA protein accumulation is decreased specifically in the ccs4 mutant, we hypothesize the suppressor mutations enhance the supply of reducing power through CCDA in the absence of CCS5. We discuss the operation of a CCS5-dependent and a CCS5-independent pathway controlling the redox status of the heme-binding cysteines of apocytochrome f.

Genetics & Heredity↗
NASA NTRSDate not supplied

ASTM International Conference on Additive Manufacturing – 2022

The In-Situ Project: Correlating In-situ monitoring data and Non-Destructive Evaluation (NDE) methods to characterize defect populations in Laser Powder Bed Fusion (L-PBF) material NDE is critical to enable the safe use of additive manufactured (AM) parts in aerospace applications. However, traditional NDE methods are not fully adaptable to complex AM geometries to appropriately screen for critical defects, and L-PBF processes inherently generate defects. In-situ monitoring techniques can give information about the quality of the build process and indicate process variations that could potentially create defects. Proven, causal correlations between in-situ monitoring indications and resulting defects are needed to inform about the final quality of the part. Thus, the development of a new approach is necessary. NASA started a two-phase study that would investigate techniques for characterizing defect populations in L-PBF material, first in material with induced defects, then in a nominal L-PBF process, by correlating in-situ, NDE, and serial sectioning data. Objectives also include the evaluation of seeded defect methodologies for realistic defect creation, creating a baseline of defect populations in a Qualified Material Process (QMP), characterizing the effect of heat treatment, and correlating defect populations with tensile and fatigue properties. By comparing computed tomography images, in-situ monitoring images, and metallography images, the team has been able to draw preliminary conclusions. They include a better understanding of the limitation of the NDE tools, learning about the “healing” of the samples observed during layer building and a comparison study on different laser power variation samples. Those preliminary conclusions will help dictate the follow-up work that will be presented at the conference.

additive manufacturing↗
DOE OSTI2025

Comprehensive defect evaluation of advanced nuclear fuels using high-resolution acoustic signals and optimized sensor separation

Graphite pebble composite structures based on TRistructural-ISOtropic (TRISO) particles are being developed as core nuclear fuels in advanced power reactors, promising safe operation at increased temperatures. Ensuring the structural integrity of these nuclear fuels requires comprehensive and accurate non-destructive evaluation (NDE) techniques to characterize defects and damage in the pebbles. However, traditional acoustic evaluation methods face limitations in defect characterization due to the highly attenuative, and geometrically and compositionally complex nature of these structures. This study proposes an improved acoustic NDE technique for accurate detection and classification of anticipated relevant defects and damage in graphite pebbles using high-resolution acoustic signals and optimized transmit-receive sensor networks. The proposed approach utilizes a triangular three-sensor network as the base unit, comprising three transmit-receive sensors. The sensor separation distance, as well as acoustic excitation center frequency, pulse-width, and bandwidth are optimized to enhance spatial resolution and improve signal-to-noise ratio, enabling effective characterization of the smallest size and widest range of defects in pebbles. Furthermore, the use of the triangular sensor configuration instead of a more conventional transmit-receive sensor pair expands the inspection region from a one-dimensional linear path to a two-dimensional area, increasing spatial coverage. To mitigate challenges associated with processing of complex acoustic signals arising from high-frequency, high-bandwidth excitation in these structures, a machine-learning-based signal processing algorithm is integrated with the sensor network. In the machine-learning-based algorithm, multi-domain features are extracted from the acoustic signals to capture intricate signal characteristics, significantly improving defect identification and classification compared to traditional approaches. The proposed acoustic NDE technique offers considerable promise for practical and reliable defect/damage diagnostics of advanced nuclear pebble fuels.

42 ENGINEERING↗
DOE OSTI2024

Understanding Formation of Irradiation-Induced Defects through 4D-STEM, Electron Tomography, and WBDF-STEM

A major challenge in advancing nuclear materials for next-generation fission and proposed fusion reactors is to comprehensively understand the formation of irradiation-induced defects. Here it is essential to correlate the evolution of irradiation-induced defects and the degradation of mechanical properties, as they collectively dictate the material's lifespan and ensure nuclear safety. Scanning transmission electron microscopy (STEM) based techniques have emerged as indispensable tools for irradiation-induced defect characterization, offering high spatial resolution imaging and chemical analysis, such as electron energy loss spectroscopy (EELS) and energy dispersive X-ray spectroscopy (EDXS). These techniques have been effectively used to obtain an atomic-scale view of the defect structure. Recent advances in electron microscopy, particularly in 4D-STEM, offer detailed insight into microstructural evolution by capturing full 2D diffraction patterns at every pixel position. Using high-speed direct electron detectors, this technology generates a four-dimensional dataset, overcoming the limitations of traditional STEM imaging.

36 MATERIALS SCIENCE↗