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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗

NASA NTRS1991

Simulation-based instruction of technical skills

A rapid intelligent tutoring development system (RAPIDS) was developed to facilitate the production of interactive, real-time graphical device models for use in instructing the operation and maintenance of complex systems. The tools allowed subject matter experts to produce device models by creating instances of previously defined objects and positioning them in the emerging device model. These simulation authoring functions, as well as those associated with demonstrating procedures and functional effects on the completed model, required no previous programming experience or use of frame-based instructional languages. Three large simulations were developed in RAPIDS, each involving more than a dozen screen-sized sections. Seven small, single-view applications were developed to explore the range of applicability. Three workshops were conducted to train others in the use of the authoring tools. Participants learned to employ the authoring tools in three to four days and were able to produce small working device models on the fifth day.

Towne, Douglas M.↗

NASA NTRS2004

Open-Source Software for Modeling of Nanoelectronic Devices

The Nanoelectronic Modeling 3-D (NEMO 3-D) computer program has been upgraded to open-source status through elimination of license-restricted components. The present version functions equivalently to the version reported in "Software for Numerical Modeling of Nanoelectronic Devices" (NPO-30520), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 37. To recapitulate: NEMO 3-D performs numerical modeling of the electronic transport and structural properties of a semiconductor device that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. NEMO 3-D solves the applicable quantum matrix equation on a Beowulf-class cluster computer by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. A prior upgrade of NEMO 3-D incorporated a capability for a strain treatment, parameterized for bulk material properties of GaAs and InAs, for two tight-binding submodels. NEMO 3-D has been demonstrated in atomistic analyses of effects of disorder in alloys and, in particular, in bulk In(x)Ga(1-x)As and in In(0.6)Ga(0.4)As quantum dots.

Oyafuso, Fabiano↗

NASA NTRS2014

Analytic Couple Modeling Introducing Device Design Factor, Fin Factor, Thermal Diffusivity Factor, and Inductance Factor

A set of convenient thermoelectric device solutions have been derived in order to capture a number of factors which are previously only resolved with numerical techniques. The concise conversion efficiency equations derived from governing equations provide intuitive and straight-forward design guidelines. These guidelines allow for better device design without requiring detailed numerical modeling. The analytical modeling accounts for factors such as i) variable temperature boundary conditions, ii) lateral heat transfer, iii) temperature variable material properties, and iv) transient operation. New dimensionless parameters, similar to the figure of merit, are introduced including the device design factor, fin factor, thermal diffusivity factor, and inductance factor. These new device factors allow for the straight-forward description of phenomenon generally only captured with numerical work otherwise. As an example a device design factor of 0.38, which accounts for thermal resistance of the hot and cold shoes, can be used to calculate a conversion efficiency of 2.28 while the ideal conversion efficiency based on figure of merit alone would be 6.15. Likewise an ideal couple with efficiency of 6.15 will be reduced to 5.33 when lateral heat is accounted for with a fin factor of 1.0.

Seebeck effect↗

NASA NTRS1975

Development of a laboratory demonstration model active cleaning device

A laboratory demonstration model of a device for removing contaminant films from optical surfaces in space was developed. The development of a plasma tube, which would produce the desired cleaning effects under high vacuum conditions, represented the major problem in the program. This plasma tube development is discussed, and the resulting laboratory demonstration-model device is described.

Shannon, R. L.↗

NASA NTRS1986

Investigation of advanced fault insertion and simulator methods

The cooperative agreement partly supported research leading to the open-literature publication cited. Additional efforts under the agreement included research into fault modeling of semiconductor devices. Results of this research are presented in this report which is summarized in the following paragraphs. As a result of the cited research, it appears that semiconductor failure mechanism data is abundant but of little use in developing pin-level device models. Failure mode data on the other hand does exist but is too sparse to be of any statistical use in developing fault models. What is significant in the failure mode data is that, unlike classical logic, MSI and LSI devices do exhibit more than 'stuck-at' and open/short failure modes. Specifically they are dominated by parametric failures and functional anomalies that can include intermittent faults and multiple-pin failures. The report discusses methods of developing composite pin-level models based on extrapolation of semiconductor device failure mechanisms, failure modes, results of temperature stress testing and functional modeling. Limitations of this model particularly with regard to determination of fault detection coverage and latency time measurement are discussed. Indicated research directions are presented.

Dunn, W. R.↗

NASA NTRS1977

Application and effectiveness of prophylactic devices in model experiments

Material is presented for evaluating the effectiveness of prophylactic devices intended for maintaining: a relatively high functional level of the cardiovascular system; the nerve and muscle apparatus; and the water and salt status. The effects of the following are analyzed: physical training, lower body negative pressure, regulation of water and salt consumption, pharmacological preparations, and a combination of these. The author points out the need for further research.

Kakurin, L. I.↗

NASA NTRS1966

Applications of models to circuits

Active device models for linear circuit application and their application to design of operational amplifier and emitter-peaked voltage amplifier stage

SOLID STATE DEVICE↗

NASA NTRS1997

Simulation of Ultra-Small Electronic Devices: The Classical-Quantum Transition Region

Concern is increasing about how quantum effects will impact electronic device operation as down-scaling continues along the SIA Roadmap through 2010. This document describes part of a new semiconductor device modeling (SDM) program at NAS to investigate these concerns by utilizing advanced NAS and third-party numerical computation software to rapidly implement and investigate electronic device models including quantum effects. This SDM project will investigate quantum effects in devices in the classical-quantum transition region, especially sub-0.1 mm MOSFETs. Specific tasks planned for this project include the use of quantum corrections to the classical drift-diffusion and hydrodynamic models of electron transport, arid the use of nominally quantum models including significant scattering.

Biegel, Bryan A.↗

NASA NTRS1987

Pilot interaction with automated airborne decision making systems

The current research is focused on detection of human error and protection from its consequences. A program for monitoring pilot error by comparing pilot actions to a script was described. It dealt primarily with routine errors (slips) that occurred during checklist activity. The model to which operator actions were compared was a script. Current research is an extension along these two dimensions. The ORS fault detection aid uses a sophisticated device model rather than a script. The newer initiative, the model-based and constraint-based warning system, uses an even more sophisticated device model and is to prevent all types of error, not just slips or bad decision.

Hammer, John M.↗

NASA NTRS1991

Kate's Model Verification Tools

Kennedy Space Center's Knowledge-based Autonomous Test Engineer (KATE) is capable of monitoring electromechanical systems, diagnosing their errors, and even repairing them when they crash. A survey of KATE's developer/modelers revealed that they were already using a sophisticated set of productivity enhancing tools. They did request five more, however, and those make up the body of the information presented here: (1) a transfer function code fitter; (2) a FORTRAN-Lisp translator; (3) three existing structural consistency checkers to aid in syntax checking their modeled device frames; (4) an automated procedure for calibrating knowledge base admittances to protect KATE's hardware mockups from inadvertent hand valve twiddling; and (5) three alternatives for the 'pseudo object', a programming patch that currently apprises KATE's modeling devices of their operational environments.

Morgan, Steve↗

NASA NTRS2000

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.

Miranda, Felix A.↗

NASA NTRS2010

Disruptive Technologies in Workmanship: pH-neutral Flux, CDM ESD Events, HDI PCBs

This slide presentation describes what it calls "disruptive technologies", i.e., "Low-end disruption" occurs when the rate at which products improve exceeds the rate at which customers can adopt the new performance. Therefore, at some point the performance of the product overshoots the needs of certain customer segments. At this point, a disruptive technology may enter the market and provide a product which has lower performance than the incumbent but which exceeds the requirements of certain segments, thereby gaining a foothold in the market. This concept is viewed in impacting incumbent technologies Rosin Flux, with a pH-neutral water soluble Flux; electrostatic discharge models being disrupted by the charge device model (CDM) concept; and High Density Interconnect Printed Circuit Boards (HDI PCB).

Plante, Jeannette F.↗

NASA NTRS2011

Neural Networks Based Approach to Enhance Space Hardware Reliability

This paper demonstrates the use of Neural Networks as a device modeling tool to increase the reliability analysis accuracy of circuits targeted for space applications. The paper tackles a number of case studies of relevance to the design of Flight hardware. The results show that the proposed technique generates more accurate models than the ones regularly used to model circuits.

Neural Networks↗

NASA NTRS1979

Analytical model of an Annular Momentum Control Device (AMCD) laboratory test model magnetic bearing actuator

An analytical model of an Annular Momentum Control Device (AMCD) laboratory test model magnetic bearing actuator with permanent magnet fluxbiasing is presented. An AMCD consists of a spinning annular rim which is suspended by a noncontacting linear electromagnetic spin motor. The actuator is treated as a lumped-parameter electromechanical system in the development of the model.

Groom, N. J.↗

NASA NTRS1991

An EMTP system level model of the PMAD DC test bed

A power management and distribution direct current (PMAD DC) test bed was set up at the NASA Lewis Research Center to investigate Space Station Freedom Electric Power Systems issues. Efficiency of test bed operation significantly improves with a computer simulation model of the test bed as an adjunct tool of investigation. Such a model is developed using the Electromagnetic Transients Program (EMTP) and is available to the test bed developers and experimenters. The computer model is assembled on a modular basis. Device models of different types can be incorporated into the system model with only a few lines of code. A library of the various model types is created for this purpose. Simulation results and corresponding test bed results are presented to demonstrate model validity.

Dravid, Narayan V.↗

NASA NTRS1991

An EMTP system level model of the PMAD DC test bed

A power management and distribution direct current (PMAD DC) test bed was set up at the NASA Lewis Research Center to investigate Space Station Freedom Eelectric Power Systems issues. Efficiency of test bed operation significantly improves with a computer simulation model of the test bed as an adjunct tool of investigation. Such a model is developed using the Electromagnetic Transients Program (EMTP) and is available to the test bed developers and experimenters. The computer model is assembled on a modular basis. Device models of different types can be incorporated into the system model with only a few lines of code. A library of the various model types is created for this purpose. Simulation results and corresponding test bed results are presented to demonstrate model validity.

Dravid, Narayan V.↗

NASA NTRS1999

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Biegel, Bryan A.↗