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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Multiple dielectric layer effects on the space shuttle orbiter S-band quad antennas

A mathematical tool is developed for evaluation of antenna radiation pattern effects on the shuttle orbiter S band quad antennas. A ray optics approach is used which includes multiple internal reflections with special consideration to reflection from the metallic orbiter skin. Significant depolarization may occur as the angle from the normal increases. The effect of changing tile thickness on the beamwidth of the upper quads versus the lower quads results in a small increase in the lower quad beamwidth compared with the beamwidth in the upper quads. The optimization and evaluation of the S band quads and the computer tool developed may be used to evaluate other shuttle orbiter antennas.

Lindsey, J. F.↗
NASA NTRS2014

A Reliability Model for Ni-BaTiO3-Based (BME) Ceramic Capacitors

The evaluation of multilayer ceramic capacitors (MLCCs) with base-metal electrodes (BMEs) for potential NASA space project applications requires an in-depth understanding of their reliability. The reliability of an MLCC is defined as the ability of the dielectric material to retain its insulating properties under stated environmental and operational conditions for a specified period of time t. In this presentation, a general mathematic expression of a reliability model for a BME MLCC is developed and discussed. The reliability model consists of three parts: (1) a statistical distribution that describes the individual variation of properties in a test group of samples (Weibull, log normal, normal, etc.), (2) an acceleration function that describes how a capacitors reliability responds to external stresses such as applied voltage and temperature (All units in the test group should follow the same acceleration function if they share the same failure mode, independent of individual units), and (3) the effect and contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size r, and capacitor chip size S. In general, a two-parameter Weibull statistical distribution model is used in the description of a BME capacitors reliability as a function of time. The acceleration function that relates a capacitors reliability to external stresses is dependent on the failure mode. Two failure modes have been identified in BME MLCCs: catastrophic and slow degradation. A catastrophic failure is characterized by a time-accelerating increase in leakage current that is mainly due to existing processing defects (voids, cracks, delamination, etc.), or the extrinsic defects. A slow degradation failure is characterized by a near-linear increase in leakage current against the stress time; this is caused by the electromigration of oxygen vacancies (intrinsic defects). The two identified failure modes follow different acceleration functions. Catastrophic failures follow the traditional power-law relationship to the applied voltage. Slow degradation failures fit well to an exponential law relationship to the applied electrical field. Finally, the impact of capacitor structure on the reliability of BME capacitors is discussed with respect to the number of dielectric layers in an MLCC unit, the number of BaTiO3 grains per dielectric layer, and the chip size of the capacitor device.

reliability↗
NASA NTRS2011

Reliability Evaluation of Base-Metal-Electrode (BME) Multilayer Ceramic Capacitors for Space Applications

This paper reports reliability evaluation of BME ceramic capacitors for possible high reliability space-level applications. The study is focused on the construction and microstructure of BME capacitors and their impacts on the capacitor life reliability. First, the examinations of the construction and microstructure of commercial-off-the-shelf (COTS) BME capacitors show great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and approximately 0.5 micrometers, which is much less than that of most PME capacitors. The primary reasons that a BME capacitor can be fabricated with more internal electrode layers and less dielectric layer thickness is that it has a fine-grained microstructure and does not shrink much during ceramic sintering. This results in the BME capacitors a very high volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT) and regular life testing as per MIL-PRF-123. Most BME capacitors were found to fail· with an early dielectric wearout, followed by a rapid wearout failure mode during the HALT test. When most of the early wearout failures were removed, BME capacitors exhibited a minimum mean time-to-failure of more than 10(exp 5) years. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically between 10 and 20. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life expectancy of the BME capacitor. Since BME capacitors have a much smaller grain size than PME capacitors, it is reasonable to predict that BME capacitors with thinner dielectric layers may have an equivalent life expectancy to that of PME capacitors with thicker dielectric layers.

Liu, David (Donghang)↗
NASA NTRS2011

Reliability Evaluation of Base-Metal-Electrode Multilayer Ceramic Capacitors for Potential Space Applications

Base-metal-electrode (BME) ceramic capacitors are being investigated for possible use in high-reliability spacelevel applications. This paper focuses on how BME capacitors construction and microstructure affects their lifetime and reliability. Examination of the construction and microstructure of commercial off-the-shelf (COTS) BME capacitors reveals great variance in dielectric layer thickness, even among BME capacitors with the same rated voltage. Compared to PME (precious-metal-electrode) capacitors, BME capacitors exhibit a denser and more uniform microstructure, with an average grain size between 0.3 and 0.5 m, which is much less than that of most PME capacitors. BME capacitors can be fabricated with more internal electrode layers and thinner dielectric layers than PME capacitors because they have a fine-grained microstructure and do not shrink much during ceramic sintering. This makes it possible for BME capacitors to achieve a very high capacitance volumetric efficiency. The reliability of BME and PME capacitors was investigated using highly accelerated life testing (HALT). Most BME capacitors were found to fail with an early avalanche breakdown, followed by a regular dielectric wearout failure during the HALT test. When most of the early failures, characterized with avalanche breakdown, were removed, BME capacitors exhibited a minimum mean time-to-failure (MTTF) of more than 105 years at room temperature and rated voltage. Dielectric thickness was found to be a critical parameter for the reliability of BME capacitors. The number of stacked grains in a dielectric layer appears to play a significant role in determining BME capacitor reliability. Although dielectric layer thickness varies for a given rated voltage in BME capacitors, the number of stacked grains is relatively consistent, typically around 12 for a number of BME capacitors with a rated voltage of 25V. This may suggest that the number of grains per dielectric layer is more critical than the thickness itself for determining the rated voltage and the life expectancy of the BME capacitor. The leakage current characterization and the failure analysis results suggest that most of these early avalanche failures are due to the extrinsic minor construction defects introduced during fabrication of BME capacitors. The concentration of the extrinsic defects must be reduced if the BME capacitors are considered for high reliability applications. There are two approaches that can reduce or prevent the occurrence of early failure in BME capacitors: (1) to reduce the defect concentration with improved processing control; (2) to prevent the use of BME capacitors under harsh external stress levels so that the extrinsic defects will never be triggered for a failure. In order to do so appropriate dielectric layer thickness must be determined for a given rated voltage.

Liu, David (Donhang)↗
NASA NTRS1989

Microwave field effect transistor

Electrodes of a high power, microwave field effect transistor are substantially matched to external input and output networks. The field effect transistor includes a metal ground plane layer, a dielectric layer on the ground plane layer, a gallium arsenide active region on the dielectric layer, and substantially coplanar spaced source, gate, and drain electrodes having active segments covering the active region. The active segment of the gate electrode is located between edges of the active segments of the source and drain electrodes. The gate and drain electrodes include inactive pads remote from the active segments. The pads are connected directly to the input and output networks. The source electrode is connected to the ground plane layer. The space between the electrodes and the geometry of the electrodes extablish parasitic shunt capacitances and series inductances that provide substantial matches between the input network and the gate electrode and between the output network and the drain electrode. Many of the devices are connected in parallel and share a common active region, so that each pair of adjacent devices shares the same source electrodes and each pair of adjacent devices shares the same drain electrodes. The gate electrodes for the parallel devices are formed by a continuous stripe that extends between adjacent devices and is connected at different points to the common gate pad.

Huang, Ho-Chung↗
NASA NTRS1984

Wave attenuation and mode dispersion in a waveguide coated with lossy dielectric material

The modal attenuation constants in a cylindrical waveguide coated with a lossy dielectric material are studied as functions of frequency, dielectric constant, and thickness of the dielectric layer. A dielectric material best suited for a large attenuation is suggested. Using Kirchhoff's approximation, the field attenuation in a coated waveguide which is illuminated by a normally incident plane wave is also studied. For a circular guide which has a diameter of two wavelengths and is coated with a thin lossy dielectric layer (omega sub r = 9.1 - j2.3, thickness = 3% of the radius), a 3 dB attenuation is achieved within 16 diameters.

Lee, C. S.↗
NASA NTRS2011

Phase-Controlled Magnetic Mirror for Wavefront Correction

Typically, light interacts with matter via the electric field and interaction with weakly bound electrons. In a magnetic mirror, a patterned nanowire is fabricated over a metallic layer with a dielectric layer in between. Oscillation of the electrons in the nanowires in response to the magnetic field of incident photons causes a re-emission of photons and operation as a "magnetic mirror." By controlling the index of refraction in the dielectric layer using a local applied voltage, the phase of the emitted radiation can be controlled. This allows electrical modification of the reflected wavefront, resulting in a deformable mirror that can be used for wavefront control. Certain applications require wavefront quality in the few-nanometer regime, which is a major challenge for optical fabrication and alignment of mirrors or lenses. The use of a deformable magnetic mirror allows for a device with no moving parts that can modify the phase of incident light over many spatial scales, potentially with higher resolution than current approaches. Current deformable mirrors modify the incident wavefront by using nano-actuation of a substrate to physically bend the mirror to a desired shape. The purpose of the innovation is to modify the incident wavefront for the purpose of correction of fabrication and alignment-induced wavefront errors at the system level. The advanced degree of precision required for some applications such as gravity wave detection (LISA - Laser Interferometer Space Antenna) or planet finding (FKSI - Fourier-Kelvin Stellar Interferometer) requires wavefront control at the limits of the current state of the art. All the steps required to fabricate a magnetic mirror have been demonstrated. The modification is to apply a bias voltage to the dielectric layer so as to change the index of refraction and modify the phase of the reflected radiation. Light is reflected off the device and collected by a phase-sensing interferometer. The interferometer determines the initial wavefront of the device and fore optics. A wavefront correction is calculated, and voltage profile for each nanowire strip is determined. The voltage is applied, modifying the local index of refraction of the dielectric under the nanowire strip. This modifies the phase of the reflected light to allow wavefront correction.

Hagopian, John↗
NASA NTRS2005

Three dimensional interactive display

A three-dimensional (3-D) interactive display and method of forming the same, includes a transparent capaciflector (TC) camera formed on a transparent shield layer on the screen surface. A first dielectric layer is formed on the shield layer. A first wire layer is formed on the first dielectric layer. A second dielectric layer is formed on the first wire layer. A second wire layer is formed on the second dielectric layer. Wires on the first wire layer and second wire layer are grouped into groups of parallel wires with a turnaround at one end of each group and a sensor pad at the opposite end. An operational amplifier is connected to each of the sensor pads and the shield pad biases the pads and receives a signal from connected sensor pads in response to intrusion of a probe. The signal is proportional to probe location with respect to the monitor screen.

Vranish, John M.↗
DOE OSTI2021

Electronic assembly with a direct current bus connection

A folded outer tab comprises a first outer dielectric layer and a second outer dielectric layer that contact or overlie an outer terminal, where the outer terminal is associated with a first polarity of the DC bus. A bent inner tab comprises a first inner dielectric layer and a second inner dielectric layer that contact or overlie an inner terminal, where the inner terminal is associated with a second polarity of the DC bus that is opposite the first polarity. The folded outer tab and the bent inner tab comprise electrically conductive faces, of opposite polarities, formed of exposed portions of the outer terminal and the inner terminal.

Schmit, Christopher J.↗
NASA NTRS2019

Multi-Layer Wireless Sensor Construct for Use at Electrically-Conductive Material Surfaces

A multi-layer wireless sensor construct is provided. The construct includes a first dielectric layer adapted to be attached to a portion of a first surface of an electrically-conductive material. A layer of mu metal is provided on the first dielectric layer. A second dielectric layer is provided on the layer of mu metal. An electrical conductor is provided on the second dielectric layer wherein the second dielectric layer separates the electrical conductor from the layer of mu metal. The electrical conductor has first and second ends and is shaped to form an unconnected open-circuit that, in the presence of a time-varying magnetic field, resonates to generate a harmonic magnetic field response having a frequency, amplitude and bandwidth.

Dudley, Kenneth L.↗
DOE OSTI2021

Metasurface skin cloak

This disclosure provides systems, methods, and devices related to a metasurface skin cloak. In one aspect, a metasurface skin cloak includes a dielectric layer and a plurality of blocks disposed on the dielectric layer. The dielectric layer is disposed over a surface including a feature on the surface. Each block of the plurality of blocks has a shape that is symmetric about two perpendicular axes. The metasurface skin can render the feature on the surface not optically detectable.

Ni, Xingjie↗
NASA NTRS1987

Frequency selective reflection and transmission at a layer composed of a periodic dielectric

The feasibility of using a periodic dielectric layer, composed of alternating bars having dielectric constants epsilon sub 1 and epsilon sub 2, as a frequency selective subreflector in order to permit feed separation in large aperture reflecting antenna systems was examined. For oblique incidence, it is found that total transmission and total reflection can be obtained at different frequencies for proper choices of epsilon sub 1, epsilon 2, and the geometric parameters. The frequencies of total reflection and transmission can be estimated from wave phenomena occurring in a layer of uniform dielectric constant equal to the average for the periodic layers. About some of the frequencies of total transmission, the bandwidth for 90% transmission is found to be 40%. However, the bandwidth for 90% reflection is always found to be much narrower; the greatest value found being 2.5%.

Bertoni, Henry L.↗
DOE OSTI2024

Engineered nanostructured passivated contacts and method of making the same

The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.

Stradins, Pauls↗
NASA NTRS2012

Some Aspects of the Failure Mechanisms in BaTiO3-Based Multilayer Ceramic Capacitors

The objective of this presentation is to gain insight into possible failure mechanisms in BaTiO3-based ceramic capacitors that may be associated with the reliability degradation that accompanies a reduction in dielectric thickness, as reported by Intel Corporation in 2010. The volumetric efficiency (microF/cm3) of a multilayer ceramic capacitor (MLCC) has been shown to not increase limitlessly due to the grain size effect on the dielectric constant of ferroelectric ceramic BaTiO3 material. The reliability of an MLCC has been discussed with respect to its structure. The MLCCs with higher numbers of dielectric layers will pose more challenges for the reliability of dielectric material, which is the case for most base-metal-electrode (BME) capacitors. A number of MLCCs manufactured using both precious-metal-electrode (PME) and BME technology, with 25 V rating and various chip sizes and capacitances, were tested at accelerated stress levels. Most of these MLCCs had a failure behavior with two mixed failure modes: the well-known rapid dielectric wearout, and so-called 'early failures." The two failure modes can be distinguished when the testing data were presented and normalized at use-level using a 2-parameter Weibull plot. The early failures had a slope parameter of Beta >1, indicating that the early failures are not infant mortalities. Early failures are triggered due to external electrical overstress and become dominant as dielectric layer thickness decreases, accompanied by a dramatic reduction in reliability. This indicates that early failures are the main cause of the reliability degradation in MLCCs as dielectric layer thickness decreases. All of the early failures are characterized by an avalanche-like breakdown leakage current. The failures have been attributed to the extrinsic minor construction defects introduced during fabrication of the capacitors. A reliability model including dielectric thickness and extrinsic defect feature size is proposed in this presentation. The model can be used to explain the Intel-reported reliability degradation in MLCCs with respect to the reduction of dielectric thickness. It can also be used to estimate the reliability of a MLCC based on its construction and microstructure parameters such as dielectric thickness, average grain size, and number of dielectric layers. Measures for preventing early failures are also discussed in this document.

Liu, David Donhang↗
NASA NTRS1994

A Novel Transition Between Rectangular Waveguide and Layered Ridge Dielectric Waveguide

A novel transition between rectangular waveguide and layered ridge dielectric waveguide (LRDW) is reported. The transition is also suitable for use with image guide, insulated image guide, dielectric ridge waveguide and other open dielectric waveguides. Both experimental and theoretical data are presented which compare the new transition to three transitions reported in the literature.

Ponchak, George E.↗
DOE OSTI2024

Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field–Effect Transistors

Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy-degenerated poly-domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET-type heterostructure “ferrielectric CuInP 2 S 6 film—2D-MoS 2 single-layer—SiO 2 dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep-slope ferrielectric FETs.

36 MATERIALS SCIENCE↗