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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Cryogenic thermal diode heat pipes

The development of spiral artery cryogenic thermal diode heat pipes was continued. Ethane was the working fluid and stainless steel the heat pipe material in all cases. The major tasks included: (1) building a liquid blockage (blocking orifice) thermal diode suitable for the HEPP space flight experiment; (2) building a liquid trap thermal diode engineering model; (3) retesting the original liquid blockage engineering model, and (4) investigating the startup dynamics of artery cryogenic thermal diodes. An experimental investigation was also conducted into the wetting characteristics of ethane/stainless steel systems using a specially constructed chamber that permitted in situ observations.

Alario, J.↗
NASA NTRS2001

Gap Excitations and Series Loads in Microstrip Lines: Equivalent Network Characterization with Application to THz Circuits

At submillimeter wavelengths typical gap discontinuities in microstrip, CPW lines or at antenna terminals, which might contain diodes or active elements, cannot be viewed as simple quasi statically evaluated lumped elements. Planar Schottky diodes at 2.5 THz, for example, have a footprint that is comparable to a wavelength. Thus, apart from modelling the diodes themselves, the connection with their exciting elements (antennas or microstrip) gives rise to parasitics. Full wave or strictly numeric approaches can be used to account for these parasitics but at the expense of generality of the solution and the CPU time of the calculation. In this paper an equivalent network is derived that accurately accounts for large gap discontinuities (with respect to a wavelength) without suffering from the limitations of available numeric techniques.

Neto, Andrea↗
NASA NTRS1984

A comparison of IMPATT oscillator power and frequency above 100 GHz with results derived from theoretical models

This investigation is concerned with a comparison of measured 117-GHz IMPATT oscillator frequency and output power with results derived from theoretical circuit models. It is pointed out that previous millimeter-wave oscillator models are unsuitable for studying circuit behavior, such as oscillator tuning as a function of waveguide short position or other circuit parameters. In the current study, oscillator circuit modeling techniques, successfully applied at X-band, are applied for the first time to a millimeter-wave IMPATT oscillator circuit. Attention is given to an oscillator circuit description, an IMPATT diode circuit model, a circuit model, and an oscillator analysis.

Bates, B. D.↗
NASA NTRS2001

Modeling of Kink-Shaped Carbon-Nanotube Schottky Diode with Gate Bias Modulation

A model is proposed for the recent gate-voltage (V(sub G)) modulation experiment of a kink-shaped carbon nanotube (NT) Schottky diode. Since larger V(sub G) increases both the forward and the reverse turn-on voltages of the diode in the experiment, we show that: (1) the rectification must occur at the kink where the metallic and the semiconducting NTs meet, and not at the electrode contact, and (2) the semiconducting NT must be n-type. The turn-on voltages are derived analytically as a function of V(sub G) with the electrode contact contribution and a good agreement is obtained with the experimental data.

Yamada, Toshishige↗
NASA NTRS1992

Theoretical model for frequency locking a diode laser with a Faraday cell

A new method was developed for frequency locking a diode lasers, called 'the Faraday anomalous dispersion optical transmitter (FADOT) laser locking', which is much simpler than other known locking schemes. The FADOT laser locking method uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. The FADOT method is vibration insensitive and exhibits minimal thermal expansion effects. The system has a frequency pull in the range of 443.2 GHz (9 A). The method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters.

Wanninger, P.↗
NASA NTRS1995

On the modeling and optimization of Schottky varactor frequency multipliers at submillimeter wavelengths

Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. A millimeter wavelengths the equivalent circuits is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies.

TRT-THEORETICAL↗
NASA NTRS1984

Rate equations analysis of phase-locked semiconductor laser arrays under steady state conditions

Rate equations analysis of phase-locked semiconductor laser arrays has been carried out. It was found that for given (laser) current densities, the photon density distribution in the array elements is that particular one which maximizes the total photon density. The results of this analysis were then combined with the waveguide properties of the laser array waveguide, yielding a basic model of phase-locked diode laser arrays. This model explains the effects of the variation of the current combination through the array elements on its mode structure that were observed recently.

Katz, J.↗
NASA NTRS2005

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W(square root)xHz.

semiconducting↗
NASA NTRS2014

Modeling and Simulation of a 5.8kV SiC PiN Diode for Inductive Pulsed Plasma Thruster Applications

Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.

Toftul, Alexandra↗
NASA NTRS2011

Supersonic Mass Flux Measurements via Tunable Diode Laser Absorption and Non-Uniform Flow Modeling

Measurements of mass flux are obtained in a vitiated supersonic ground test facility using a sensor based on line-of-sight (LOS) diode laser absorption of water vapor. Mass flux is determined from the product of measured velocity and density. The relative Doppler shift of an absorption transition for beams directed upstream and downstream in the flow is used to measure velocity. Temperature is determined from the ratio of absorption signals of two transitions (lambda(sub 1)=1349 nm and lambda(sub 2)=1341.5 nm) and is coupled with a facility pressure measurement to obtain density. The sensor exploits wavelength-modulation spectroscopy with second-harmonic detection (WMS-2f) for large signal-to-noise ratios and normalization with the 1f signal for rejection of non-absorption related transmission fluctuations. The sensor line-of-sight is translated both vertically and horizontally across the test section for spatially-resolved measurements. Time-resolved measurements of mass flux are used to assess the stability of flow conditions produced by the facility. Measurements of mass flux are within 1.5% of the value obtained using a facility predictive code. The distortion of the WMS lineshape caused by boundary layers along the laser line-of-sight is examined and the subsequent effect on the measured velocity is discussed. A method for correcting measured velocities for flow non-uniformities is introduced and application of this correction brings measured velocities within 4 m/s of the predicted value in a 1630 m/s flow.

Chang, Leyen S.↗
NASA NTRS1992

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.↗
NASA NTRS1989

Spike train generation and current-to-frequency conversion in silicon diodes

A device physics model is developed to analyze spontaneous neuron-like spike train generation in current driven silicon p(+)-n-n(+) devices in cryogenic environments. The model is shown to explain the very high dynamic range (0 to the 7th) current-to-frequency conversion and experimental features of the spike train frequency as a function of input current. The devices are interesting components for implementation of parallel asynchronous processing adjacent to cryogenically cooled focal planes because of their extremely low current and power requirements, their electronic simplicity, and their pulse coding capability, and could be used to form the hardware basis for neural networks which employ biologically plausible means of information coding.

Coon, D. D.↗
NASA NTRS2003

Simulation, Model Verification and Controls Development of Brayton Cycle PM Alternator: Testing and Simulation of 2 KW PM Generator with Diode Bridge Output

Professor Stankovic will be developing and refining Simulink based models of the PM alternator and comparing the simulation results with experimental measurements taken from the unit. Her first task is to validate the models using the experimental data. Her next task is to develop alternative control techniques for the application of the Brayton Cycle PM Alternator in a nuclear electric propulsion vehicle. The control techniques will be first simulated using the validated models then tried experimentally with hardware available at NASA. Testing and simulation of a 2KW PM synchronous generator with diode bridge output is described. The parameters of a synchronous PM generator have been measured and used in simulation. Test procedures have been developed to verify the PM generator model with diode bridge output. Experimental and simulation results are in excellent agreement.

Anna V Stankovic↗
NASA NTRS1972

Development of a thermal diode heat pipe for the advanced thermal control flight experiment /ATFE/.

Description of the analysis, design, fabrication, and test of the engineering model of the ATFE diode. Included is a review of several diode concepts that led to selection of the liquid blockage technique for shut-off. The diode is made of stainless steel, 26 in. long, 0.375-in. nominal OD, with self-filling spiral artery wick and ammonia working fluid. In the normal heat pipe mode, at ambient temperatures, the diode capacity is 85 W. For flight, the pipe will deliver 20 W with a 9 F temperature difference between the external evaporator and condenser surfaces. Reverse mode conduction is less than 1.5 W with a 260 F temperature difference.

Swerdling, B.↗