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When subglacial meltwater is discharged into the ocean at the grounding line, it acts as a source of buoyancy, enhancing flow speeds along the ice base that result in higher basal melt rates. The effects of subglacial discharge have been well studied in the context of a Greenland-like, vertical calving front, where Earth's rotation can be neglected. Here we study these effects in the context of Antarctic ice shelves, where rotation is important. We use a numerical model to simulate ocean circulation and basal melting beneath an idealized three-dimensional ice shelf and vary the rate and distribution of subglacial discharge. For channelized discharge, we find that in the rotating case, total melt-flux anomaly increases with two-thirds power of the discharge, in contrast to existing non-rotating results for which the melt-flux anomaly increases with one-third power of the discharge. The higher melt-flux anomaly with discharge is attributed to a more extensive area of the ice-shelf base being exposed to direct high melting by the rising plume as it is deflected due to Earth's rotation and its path is prolonged. For distributed discharge, we find that in both the rotating and the non-rotating cases, the melt-flux anomaly increases with two-thirds power of the discharge. Furthermore, in the rotating case, the addition of channelized, subglacial discharge can produce either a higher or a lower ice-shelf basal melt-flux anomaly than the equivalent amount of distributed discharge, depending on its location along the grounding line relative to the directionality of the Coriolis force. This contrasts with previous results from non-rotating, vertical ice-cliff simulations, where distributed discharge was always found to be more efficient than channelized discharge at enhancing the terminus-averaged melt rate. The implication, based on our idealized simulations, is that melt-rate parameterizations attempting to include subglacial discharge effects that are not geometry- and rotation-aware may produce total melt-flux anomalies that are off by a factor of 2 or more.
In this work, evolution of parameters of nanosecond repetitively pulsed (NRP) discharges in pin-to-pin configuration in air was studied during the transient stage of initial 20 discharge pulses. Gas and plasma parameters in the discharge gap were measured using coherent microwave scattering, optical emission spectroscopy, and laser Rayleigh scattering for NRP discharges at repetition frequencies of 1, 10, and 100 kHz. Memory effects (when perturbations induced by the previous discharge pulse would not decay fully until the subsequent pulse) were detected for the repetition frequencies of 10 and 100 kHz. For 10 kHz NRP discharge, the discharge parameters experienced significant change after the first pulse and continued to substantially fluctuate between subsequent pulses due to rapid evolution of gas density and temperature during the 100 μs inter-pulse time caused by intense redistribution of the flow field in the gap on that time scale. For 100 kHz NRP discharge, the discharge pulse parameters reached a new steady-state at about five pulses after initiation. Further, this new steady-state was associated with well-reproducible parameters between the discharge pulses and substantial reduction in breakdown voltage, discharge pulse energy, and electron number density in comparison to the first discharge pulse. For repetition frequencies 1–100 kHz considered in this work, the memory effects can be likely attributed to the reduction in gas number density and increase in the gas temperature that cannot fully recover to ambient conditions before subsequent discharge pulses.
Charging can occur in space due to plasma and high energy particles. Charging is especially severe in certain earth orbits such as geostationary orbit, medium earth orbit and highly inclined orbit. A spacecraft that travels to other planets such as Jupiter also encounters high level of charging due to Jupiter’s radiation belt. The major concern for spacecraft operation due to charging is the survival of sensitive electrical circuits. Dielectrics and floating metal can charge up and discharge onto interface circuits. The electrical circuits need to be evaluated for survival from the electrostatic-discharge (ESD) threat. Both ESD induced upset and damage need to be assessed. The interface circuits are often located inside a shielded unit in the spacecraft structure or a shielded vault with sufficient radiation shielding to avoid surface and internal charging. The materials external to the highly shielded area can charge up and discharge onto wires that can directly dissipate the ESD onto the interface circuits. Figure 1 shows a possible discharge mechanism onto the interfacing circuits. If the wire has an external shield or a coaxial line, some or most of the discharge can flow on the shield to chassis ground. There is always coupling from external discharge. If the wire has no shield, the discharge flows onto the interface circuit. Fig. 1 Possible discharge paths onto the interface circuits. The purpose of this article is to address how to model the ESD threat to be used as the discharge source onto the interface circuit based on the electron beam test data. Different models are needed for different impedances associated with the interface circuits. Once those models are derived, one needs to analyze the interface circuit with the corresponding model using an electrical simulation tool. Then, the circuit’s front-end components can be assessed for damage and upset. Upset is highly dependent on the circuit operation and system requirements, and thus it is not addressed any further. Damage of electrical parts is often rated under Human-Body-Model (HBM) ESD. One can utilize this industry-wide available information to assess the damage vulnerability due to space discharges. However, the HBM waveform does not always match the discharge waveform. To estimate the damage vulnerability of the circuit and set margin, one needs to compare the equivalent energy delivered to the victim between a HBM discharge and the results from an ESD source model based on actual discharges. This paper presents such a comparison for a few select cases.