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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Radiation Tolerant Interfaces: Influence of Local Stoichiometry at the Misfit Dislocation on Radiation Damage Resistance of Metal/Oxide Interfaces

To understand how variations in interface properties such as misfit-dislocation density and local chemistry affect radiation-induced defect absorption and recombination, we have explored a model system of CrxV1-x alloy epitaxial films deposited on MgO single crystals. By controlling film composition, the lattice mismatch with MgO was adjusted so that the misfit-dislocation density varies at the interface. These interfaces were exposed to irradiation and in situ results show that the film with a semi-coherent interface (Cr) withstands irradiation while V film, which has similar semi-coherent interface like Cr, showed the largest damage. Theoretical calculations indicate that, unlike at metal/metal interfaces, the misfit dislocation density does not dominate radiation damage tolerance at metal/oxide interfaces. Rather, the stoichiometry, and the precise location of the misfit-dislocation density relative to the interface, drives defect behavior. Together, these results demonstrate the sensitivity of defect recombination to interfacial chemistry and provide new avenues for engineering radiation-tolerant nanomaterials.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2019

Molecular dynamics discovery of an extraordinary ionic migration mechanism in dislocation-containing TlBr crystals

TlBr can surpass CZT as the leading semiconductor for γ- and X-radiation detection. Unfortunately, the optimum properties of TlBr quickly decay when an operating electrical field is applied. Quantum mechanical studies indicated that if this property degradation comes from the conventional mechanism of ionic migration of vacancies, then an unrealistically high vacancy concentration is required to account for the rapid aging of TlBr seen in experiments. Here, we have applied large scale molecular dynamics simulations to study the effects of dislocations on ionic migration of TlBr crystals under electrical fields. We found that electrical fields can drive the motion of edge dislocations in both slip and climb directions. These combined motions eject enormous vacancies in the dislocation trail. Both dislocation motion and a high vacancy concentration can account for the rapid aging of the TlBr detectors. These findings suggest that strengthening methods to pin dislocations should be explored to increase the lifetimes of TlBr crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

The Scattering of Phonons by Infinitely Long Quantum Dislocations Segments and the Generation of Thermal Transport Anisotropy in a Solid Threaded by Many Parallel Dislocations

A canonical quantization procedure is applied to the interaction of elastic waves—phonons—with infinitely long dislocations that can oscillate about an equilibrium, straight line, configuration. The interaction is implemented through the well-known Peach–Koehler force. For small dislocation excursions away from the equilibrium position, the quantum theory can be solved to all orders in the coupling constant. We study in detail the quantum excitations of the dislocation line and its interactions with phonons. The consequences for the drag on a dislocation caused by the phonon wind are pointed out. We compute the cross-section for phonons incident on the dislocation lines for an arbitrary angle of incidence. The consequences for thermal transport are explored, and we compare our results, involving a dynamic dislocation, with those of Klemens and Carruthers, involving a static dislocation. In our case, the relaxation time is inversely proportional to frequency, rather than directly proportional to frequency. As a consequence, the thermal transport anisotropy generated on a material by the presence of a highly-oriented array of dislocations is considerably more sensitive to the frequency of each propagating mode, and, therefore, to the temperature of the material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Enhanced mobility of dislocation network nodes and its effect on dislocation multiplication and strain hardening

Understanding plastic deformation of crystals in terms of the fundamental physics of dislocations has remained a grand challenge in materials science for decades. To overcome this, the Discrete Dislocation Dynamics (DDD) method has been developed, but its lack of atomistic resolution leaves open the possibility that certain key mechanisms may be overlooked. Here, by comparing large-scale Molecular Dynamics (MD) with DDD simulations performed under identical conditions we uncover significant discrepancies in the predicted strength and microstructure evolution in BCC crystals under high-strain rate conditions. These are traced to unexpected behaviors of dislocation network nodes forming at dislocation intersections, that can move in ways not previously anticipated as revealed by MD. Once these newfound freedoms of nodal motion are incorporated, DDD simulations begin to closely match plastic evolution observed in MD. This additional mechanism of motion whereby non-screw dislocations can change their glide plane profoundly affects fundamental processes of dislocation multiplication, recovery and storage that define strength of metals.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dislocation nano-hydrides in nickel: Nucleation, evolution and effects on dislocation behaviors

Nano-hydrides have been predicted to precipitate at the core of edge dislocations in the Ni-H system, a mechanism that may promote hydrogen embrittlement. However, nano-hydride nucleation, growth, and effects on dislocation behavior have seldom been explored. This work combines molecular dynamics grand canonical Monte Carlo (MD-GCMC) simulations and continuum modeling to uncover a wide range of phenomena linked to dislocation nano-hydrides. Simulations reveal that nano-hydrides can be stabilized at dislocation cores with all character angles, including screw segments, due to the hydrostatic stresses around the cores of the Shockley partials. Nano-hydride nucleation takes place in these regions, and growth is dictated by the character angle θ of the perfect dislocation. The equilibrium stacking fault width d eq varies dynamically to increase the local hydrostatic stress field and facilitate the formation of the nano-hydride, forming a constriction-like feature and leading to three distinct behaviors: d eq decreases for θ > 30°, d eq remains unchanged for θ = 30°, and d eq increases for θ < 30°. Remote hydrostatic and Escaig stresses are also shown to influence the nucleation stage, implying stress concentrations such as those ahead of crack tips may facilitate nano-hydride precipitation. Moreover, we identify a new hydrogen-induced 60° dislocation reaction that emits a Shockley partial on a conjugate plane, with potential implications for twin nucleation. Testable predictions from this study are then used to reinterpret previous results from the literature. In conclusion, these findings provide a comprehensive framework to assess nano-hydride formation and evolution at dislocations in nickel and other face-centered cubic metals, with important implications to hydrogen embrittlement.

Dislocations↗
DOE OSTI2019

Solute-dislocation interaction in Mg from first-principles: and twinning dislocations with flexible boundary conditions

We relax the cores of $\langle c+a \rangle$ edge and screw dislocations, and $(10\overline{1}2)$ and $(10\overline{1}1)$ twinning dislocations in Mg using first-principles calculations with flexible boundary conditions (FBC). FBC couple highly distorted cores to a harmonic lattice through lattice Green functions (LGF), allowing dislocations to relax as isolated defects. Unlike previous FBC calculations using bulk LGFs, we use LGFs specifically for dislocated geometries. The optimized geometries provide sites for computing solute-dislocation interactions via direct substitution, as well as local strain and slip for input to computationally efficient geometric solute interaction models. The interactions are inputs for solid-solution strengthening models. We compute interactions between Al, Ca, Mn, Sn, and Zn and the dislocations, and predict corresponding changes in stress for dislocation motion. We compare the strengthening of each of these non-basal deformation modes to basal strengthening and examine implications for ductility in Mg alloys. Funding from DOE-USAMP Cooperative Agreement Number DE-EE0007756.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Dislocation density-based plasticity model from massive discrete dislocation dynamics database

In this work, we present a dislocation density-based strain hardening model for single crystal copper through a systematic coarse-graining analysis of more than 200 discrete dislocation dynamics (DDD) simulations of plastic deformation under uniaxial tension. The proposed constitutive model has two components: a generalized Taylor relation connecting resolved shear stresses to dislocation densities on individual slip systems, and a generalized Kocks-Mecking model for dislocation multiplication. The DDD data strongly suggests a logarithmic dependence of flow stress on the plastic shear strain rate on each slip system, and, equivalently, an exponential dependence of the plastic shear strain rate on the resolved shear stress. Hence the proposed generalized Taylor relation subsumes the Orowan relation for plastic flow. The DDD data also calls for a correction to the Kocks-Mecking model of dislocation multiplication to account for the increase of dislocation density on slip systems with negligible plastic shear strain rate. This is accomplished by allowing the multiplication rate on each slip system to include contributions from the plastic strain rates of the two coplanar slip systems. The resulting constitutive model successfully captures the strain hardening rate dependence on the loading orientation as predicted by the DDD simulations, which is also consistent with existing experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Coupled effect of Cr and Al on interactions between a prismatic interstitial dislocation loop and an edge dislocation line in Fe-Cr-Al alloy

Segregation of alloying elements to a prismatic dislocation loop under irradiation is an important phenomenon in understanding the role of loops in radiation effects in alloys. In this work, various segregation sequences of Cr and Al atoms to a $\langle$100$\rangle$ and a 1/2 $\langle$111$\rangle$ prismatic dislocation loop in a Fe-Cr-Al alloy are explored using molecular dynamics method and ab initio energy calculation. Here, the results reveal that Cr can readily segregate to the loops while Al atoms cannot by themselves, but the segregated Cr atoms are able to promote Al segregation at the loops, defined as a coupled segregation of Cr and Al. After interacting with Cr and Al, a previously mobile 1/2 $\langle$111$\rangle$ loop becomes sessile. Al segregation through the coupled segregation process can further affect the pinning behavior of a dislocation loop to an edge dislocation motion. By varying the Al fraction in the segregated solutes, a nonlinear dependence of the pinning effect on dislocation motion is determined. At lower fractions, the pinning strength increases with the increasing Al fraction until Al fraction reaches a critical value of about 19%, above which the pinning strength decreases with further increase of Al fraction. All these results suggest that, in addition to the effect of Al on the surface resistance to oxidation, Al effect on the dislocation loop behavior is important to optimize the composition of Fe-Cr-Al alloys for their applications in accident tolerant fuel concepts.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A phase field dislocation dynamics model for a bicrystal interface system: An investigation into dislocation slip transmission across cube-on-cube interfaces

In this study, we present a phase field dislocation dynamics formulation designed to treat a system comprised of two materials differing in moduli and lattice parameters that meet at a common interface. We apply the model to calculate the critical stress τ crit required to transmit a perfect dislocation across the bimaterial interface with a cube-on-cube orientation relationship. The calculation of τ crit accounts for the effects of: 1) the lattice mismatch (misfit or coherency stresses), 2) the elastic moduli mismatch (Koehler forces or image stresses), and 3) the formation of the residual dislocation in the interface. Our results show that the value of τ crit associated with the transmission of a dislocation from material 1 to material 2 is not the same as that from material 2 to material 1. Dislocation transmission from the material with the lower shear modulus and larger lattice parameter tends to be easier than the reverse and this apparent asymmetry in τ crit generally increases with increases in either lattice or moduli mismatch or both. In efforts to clarify the roles of lattice and moduli mismatch, we construct an analytical model for τcrit based on the formation energy of the residual dislocation. We show that path dependence in this energetic barrier can explain the asymmetry seen in the calculated τ crit values.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Analytic model of the remobilization of pinned glide dislocations: Including dislocation drag from phonon wind

Here, we discuss the effect of a non-constant dislocation drag coefficient on the very high strain rate regime within an analytic model describing mobile-immobile dislocation intersections applicable to fcc polycrystals. Based on previous work on dislocation drag, we estimate its temperature and pressure dependence and its effects on stress–strain rate relations. In the high temperature regime, we show that drag can remain the dominating effect even down to intermediate strain rates. We also discuss the consequences of having a limiting dislocation velocity, a feature which is typically predicted by analytic models of dislocation drag, but which is somewhat under debate because a number of MD simulations predict supersonic dislocations.

42 ENGINEERING↗
DOE OSTI2022

Disclination-dislocation based model for grain boundary stress field evolution due to slip transmission history and influence on subsequent dislocation transmission

This work demonstrates how the structure of a grain boundary (GB) and its evolution due to slip transmission history influences subsequent dislocation transmission. First, a model for the evolution of stress fields within grain boundaries that accounts for the effects of coherent dislocation transmission is introduced. Starting with a disclination-based construct of GBs at minimum energy (equilibrium), the model describes the evolution of the GB stress field to a state characteristic of excess energy (non-equilibrium) due to the incorporation of residual Burgers vector content following sequential slip transmission events. Several essential features of this model are verified via molecular dynamics simulations of lattice dislocation absorption. Second, this model is implemented into a discrete dislocation dynamics (DDD) code and simulations are performed to understand the influence of Non-equilibrium GB stress fields, conditioned by the slip transmission history, on subsequent dislocation transmission. DDD simulations reveal that the critical resolved stress necessary for slip propagation can be reduced by with continued absorption of residual dislocation content. Moreover, DDD simulations prove that a comprehensive consideration of both the binding and driving stresses, and the evolution of the transmission configuration is necessary to quantify the influence of the mechanical state of the GB on slip propagation. In general, this work provides important insights into the role of GB structure evolution, conditioned by prior deformation history, on intergranular plasticity.

42 ENGINEERING↗
DOE OSTI2019

Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single dislocation sensitivity via noise reduction

High resolution electron backscatter diffraction (HREBSD), an SEM-based diffraction technique, may be used to measure the lattice distortion of a crystalline material and to infer the geometrically necessary dislocation content. Uncertainty in the image correlation process used to compare diffraction patterns leads to an uneven distribution of measurement noise in terms of the lattice distortion, which results in erroneous identification of dislocation type and density. This work presents a method of reducing noise in HREBSD dislocation measurements by removing the effect of the most problematic components of the measured distortion. The method is then validated by comparing with TEM analysis of dislocation pile-ups near a twin boundary in austenitic stainless steel and with ECCI analysis near a nano-indentation on a tantalum oligocrystal. Finally, the HREBSD dislocation microscopy technique is able to resolve individual dislocations visible in TEM and ECCI and correctly identify their Burgers vectors.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Large plasticity in magnesium mediated by pyramidal dislocations

Lightweight magnesium alloys are attractive as structural materials for improving energy efficiency in applications such as weight reduction of transportation vehicles. One major obstacle for widespread applications is the limited ductility of magnesium, which has been attributed to $\langle$c+a$\rangle$ dislocations failing to accommodate plastic strain. We demonstrate, using in situ transmission electron microscope mechanical testing, that $\langle$c+a$\rangle$ dislocations of various characters can accommodate considerable plasticity through gliding on pyramidal planes. We found that submicrometer-size magnesium samples exhibit high plasticity that is far greater than for their bulk counterparts. Small crystal size usually brings high stress, which in turn activates more $\langle$c+a$\rangle$ dislocations in magnesium to accommodate plasticity, leading to both high strength and good plasticity.

Science & Technology - Other Topics↗
DOE OSTI2019

On the measurement of dislocations and dislocation substructures using EBSD and HRSD techniques

The accumulation of the dislocations and development of dislocation structures in plastically deformed Ni201 is examined using dedicated analyses of Electron Back-Scatter Diffraction (EBSD) acquired orientation maps, and High-Resolution Synchrotron Diffraction (HRSD) acquired patterns. The results show that the minimum detectable microstructure-averaged (bulk) total dislocation density ($ρ_T$) measured via HRSD is approximately 1E13 m -2 , while the minimum GND density ($ρ_G$) measured via EBSD is approximately 2E12 m -2 - the EBSD technique being more sensitive at low plastic strain. This highlights complementarity of the two techniques when attempting to quantify amount of plastic deformation (damage) in a material via a measurement of present dislocations and their structures. Furthermore, a relationship between EBSD-measured $ρ_G$ and the size of HRSD-measured Coherently Scattering Domains (CSDs) has been mathematically derived - this allows for an estimation of the size of CSDs from EBSD-acquired orientation maps, and conversely an estimation of $ρ_G$ from HRSD-measured size of CSDs. The measured evolution of ($ρ_T$), and $ρ_G$ is compared with plasticity theory models - the current results suggest that Ashby's single-slip model underestimates the amount of ONDs ($ρ_G$), while Taylor's model is correctly predicting the total amount of dislocation ($ρ_T$) present in the material as a function of imparted plastic strain.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

Synchrotron X-ray Topography is a powerful technique to study defects structures particularly dislocation configurations in single crystals. Complementing this technique with geometrical and contrast analysis can enhance the efficiency of quantitatively characterizing defects. In this study, the use of Synchrotron White Beam X-ray Topography (SWBXT) to determine the line directions of threading dislocations in 4H–SiC axial slices (sample cut parallel to the growth axis from the boule) is demonstrated. This technique is based on the fact that the projected line directions of dislocations on different reflections are different. Another technique also discussed is the determination of the absolute Burgers vectors of threading mixed dislocations (TMDs) using Synchrotron Monochromatic Beam X-ray Topography (SMBXT). This technique utilizes the fact that the contrast from TMDs varies on SMBXT images as their Burgers vectors change. By comparing observed contrast with the contrast from threading dislocations provided by Ray Tracing Simulations, the Burgers vectors can be determined. Thereafter the distribution of TMDs with different Burgers vectors across the wafer is mapped and investigated.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗