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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

AXEAP (ARGONNE X-RAY EMISSION PACKAGE)

Argonne X-ray Emission Package (AXEAP), a singular purpose software package for processing X-ray emission (XES) images collected with a 2-dimensional position sensitive pixel array detector, has been developed. AXEAP can rapidly convert XES image files into a spectral form by applying parallel computation and unsupervised machine learning to compute vast amount of image data. Special focus has been placed on designing user-friendly-interface for processing multiple edges, non-resonant and resonant x-ray emission image analysis, in order to make data processing quick and easy. AXEAP is free software and is written in MATLAB, armed with powerful libraries and toolboxes. The software runs on all common operating systems such as Linux, Window, and Mac.

SUN, CHENGJUN↗
DOE OSTI2020

Reduction of CO 2 Emissions Through Lightweight Body Panels (Project Final Report)

Lightweight construction is an integral part of Volkswagen’s overall strategy of reducing CO 2 emissions. Due to its low cost, steel is the most commonly used material for automotive exterior body panels today. Unfortunately, steel has a high density, resulting in a relatively low specific strength. Glass fiber based sheet molding compounds (SMC) provide high properties in combination with lower density. The high specific strength of SMC offers an enormous lightweight potential. To unlock the full potential of SMC materials in combination with cutting edge manufacturing processes, Volkswagen Group of America worked together with IACMI (Institute for Advanced Composites Manufacturing Innovation) and the academic partners: University of Tennessee Knoxville, Purdue University and Michigan State University; as well as the industry partners: Ashland, IDI, Owens Corning and Continental Structural Plastics. Leveraging the expertise of all project partners, reaching over the entire supply chain the project demonstrated the potential of these materials. This report will highlight the major steps in the development process on the way to technology readiness for SMC using the example of the Volkswagen Atlas Liftgate. Over the 36-month period of the project, the work focused on three R&D areas: material development, design and simulation, and development of the manufacturing process. Material selection included alternative fibers and resin systems, and accounted for material availability, properties, and cost-efficiency. The work undertaken in the field of design and simulation has pushed the envelope of short fiber reinforced thermoset molding compound process simulation. Design iterations were virtually tested, while the final design was used to validate the simulation software against physical parts. Manufacturing development used cutting-edge technology, while experts along the supply chain were working together to ensure the best possible results. In the final stage of the project, liftgates were molded, trimmed, bonded, painted and assembled before exhaustive testing. The result is an e-coat (electrophoretic dip coating) capable Class-A SMC liftgate, which is ready for high-volume production, and can be used as a technology demonstrator. The prototypes manufactured in the scope of this work have exhibited a mass reduction for the Volkswagen Atlas liftgate of up to 35% compared to the series production steel version, without a degradation of the functionalities.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications

Group-IV alloy GeSn is a promising material for electronic and optoelectronic applications due to its compatibility with both Si substrates and established Si fabrication processes. This study focuses on polycrystalline GeSn (10% Sn), which offers a cost-effective, large-area, and versatile alternative to epitaxial GeSn. We demonstrate ambipolar transport behavior in polycrystalline GeSn thin film transistors, achieving electron and hole field-effect mobilities reaching up to 0.05 cm 2 /Vs and 2.05 cm 2 /Vs, respectively. Through temperature-dependent analysis, we elucidate the underlying mechanism of this phenomenon, which we attribute to quantum tunneling between the Schottky barrier contact and the channel, as well as potential barriers between the grain boundaries of this polycrystalline film, thereby advancing the understanding of polycrystalline GeSn's electrical properties. Furthermore, this work highlights the potential of ambipolar transport as a technique to employ towards the development of GeSn complementary metal-oxide-semiconductor field-effect transistors, promising to simplify and reduce the cost of GeSn manufacturing processes for edge computing and sensing applications.

42 ENGINEERING↗
DOE OSTI2023

Current UAS Capabilities for Geospatial Spectral Solutions

Unmanned aerial systems (UAS) are playing an increasingly pivotal role in advancing the remote collection of data. The various datasets collected by these cutting-edge systems provide near-real-time information and help inform end users on everything from disaster recovery efforts to monitoring atmospheric constituents. This chapter focuses on how the collection of imagery has progressed over time, including the pivotal role UAS play in building large-scale datasets driving data analysis. The authors report the findings of a 2018–2021 survey of the fields that use UAS, the UAS platforms most commonly used, and the sensor components users select to outfit their UAS. The chapter will also discuss the range of platforms currently available, with a specific focus on issues including battery life, data downlinks, data processing times, edge computing, and availability of new sensors. The authors will also discuss the future direction of UAS platforms as well as many of the problems associated with the high spatial and temporal resolution of modern geospatial datasets.

Cotten, David↗
DOE OSTI2020

Single electron–hole pair sensitive silicon detector with surface event discrimination

Here, we demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of $\pm50$ V, resulting in a measured charge resolution of 0.06 electron-hole pairs. The high aluminum coverage ($\sim$70%) of this device allows for the discrimination of surface events and separation of events occurring near the center of the detector from those near the edge. We use this discrimination ability to show that dark events seen in previous detectors of a similar design are likely dominated by charge leakage along the side wall of the device. We saw only a small reduction in dark event rate with this biasing scheme, further suggesting that sidewall and edge-dominated processes are responsible for the majority of these events.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Two-stage crash process in resistive drift ballooning mode driven ELM crash

We report a two-stage crash process in edge localized mode (ELM) driven by resistive drift-ballooning modes (RDBMs) numerically simulated in a full annular torus domain with a scale-separated four-field reduced MHD (RMHD) model using the BOUT++ framework. In the early nonlinear phase, the small first crash is triggered by linearly unstable RDBMs, and m/n=2/1 magnetic islands are nonlinearly excited by nonlinear coupling of RDBMs as well as their higher harmonics. Here, m is the poloidal mode number, n is the toroidal mode number, the q = 2 rational surface exists near the pressure gradient peak, and q is the safety factor. Simultaneously, middle-n RDBM turbulence develops but is poloidally localized around X-points of the magnetic islands, leading to the small energy loss. The second large crash occurs in the late nonlinear phase. Higher harmonics of m/n=2/1 magnetic islands well develop around the q = 2 surface via nonlinear coupling and make the magnetic field stochastic by magnetic island overlapping. Turbulence heat transport develops at X-points of higher harmonics of m/n=2/1 magnetic islands, resulting in the turbulence spreading in the poloidal direction. The large second crash is triggered when the turbulence covers the whole poloidal region so that the magnetic island generation and magnetic field stochastization before the large crash can be interpreted as ELM precursors. It is concluded that the ELM trigger is attributed to the turbulent spreading in the poloidal direction in synchronization with the magnetic field stochastization and the crash is driven by E × B convection rather than the conventional Rechester–Rosenbluth anomalous electron heat transport.

Seto, H. (ORCID:0000000259278643)↗
DOE OSTI2020

Photoabsorption, photoionization, and Auger processes at the carbon K edge in C H 3 I

The dynamics of photoabsorption, photoionization, and the associated Auger decay have been investigated at the carbon K edge in methyl iodide (CH 3 I) using linearly polarized synchrotron radiation. Ion yield measurements were used to investigate transitions in the pre-edge region due to excitations into either unoccupied valence or Rydberg states. The assignment of these transitions was achieved through comparison with theoretical x-ray absorption spectra calculated using time-dependent density functional theory, within the Tamm-Dancoff approximation. Several of the Rydberg states belonging to series converging onto the C1s ionization limit exhibit significant vibrational structure that is also interpreted using theoretical calculations. The C1s in CH 3 I photoelectron spectrum was measured, and the observed vibrational structure was assigned with the aid of theoretical predictions. Polarization dependent, resonantly excited, valence shell photoelectron spectra were recorded at photon energies coinciding with the C1s → σ*, C1s → 6sa1 and C1s → 6pe transitions in CH 3 I , thereby allowing photoelectron angular distributions to be determined. The nonresonantly excited C(KVV) Auger electron spectrum was measured and some of the features observed at high kinetic energies were attributed to transitions into valence orbitals possessing significant iodine character. The contributions of participator and spectator Auger decay to the resonantly excited photoelectron spectra have been assessed. The influence of participator decay appears minor whereas spectator decay results in the enhanced population of satellite states.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Meta-Learning Enhanced Physics-Informed Graph Attention Convolutional Network for Distribution Power System State Estimation

Promptly perceiving distribution system states is challenged by frequent topology changes and uncertain power injections. To address these issues, a Meta-learning enhanced physics-informed graph attention convolutional network (Meta-PIGACN) model is proposed to handle topological variability in distribution system state estimation (DSSE). Specifically, physics information is integrated into the graph convolutional network, enabling a physics-informed edge-weighting process that incorporates physical information to control the aggregation of neighboring nodes. Besides, the graph attention mechanism automatically adjusts the importance of different neighboring nodes, allowing the capture and preservation of inherent system features across varying topologies, thereby improving state estimation accuracy. Furthermore, meta-learning is proposed to acquire empirical knowledge across multiple topologies so that the model can rapidly adapt to new configurations through iterative gradient descent updates even in large-scale systems. In conclusion, the simulation results based on the 33/118/1746-node distribution systems show the high accuracy and efficiency of the proposed model.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Multisensor Agile Adaptive Sampling (MAAS): A Methodology to Collect Radar Observations of Convective Cell Life Cycle

Abstract Multisensor Agile Adaptive Sampling (MAAS), a smart sensing framework, was adapted to increase the likelihood of observing the vertical structure (with little to no gaps), spatial variability (at subkilometer scale), and temporal evolution (at ∼2-min resolution) of convective cells. This adaptation of MAAS guided two mechanically scanning C-band radars (CSAPR2 and CHIVO) by automatically analyzing the latest NEXRAD data to identify, characterize, track, and nowcast the location of all convective cells forming in the Houston domain. MAAS used either a list of predetermined rules or real-time user input to select a convective cell to be tracked and sampled by the C-band radars. The CSAPR2 tracking radar was first tasked to collect three sector plan position indicator (PPI) scans toward the selected cell. Edge computer processing of the PPI scans was used to identify additional targets within the selected cell. In less than 2 min, both the CSAPR2 and CHIVO radars were able to collect bundles of three to six range–height indicator (RHI) scans toward different targets of interest within the selected cell. Bundles were successively collected along the path of cell advection for as long as the cell met a predetermined set of criteria. Between 1 June and 30 September 2022 over 315 000 vertical cross-section observations were collected by the C-band radars through ∼1300 unique isolated convective cells, most of which were observed for over 15 min of their life cycle. To the best of our knowledge, this dataset, collected primarily through automatic means, constitutes the largest dataset of its kind.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2025

Emerging applications: Neuromorphic computing and reservoir computing

The emergence of doped hafnium oxide (HfO 2 )-based ferroelectric films has enabled highly scalable and silicon-compatible ferroelectric devices, opening new frontiers in neuromorphic and reservoir computing. Among these, ferroelectric field-effect transistors (FeFETs) are particularly promising due to their analog memory characteristics and unique polarization dynamics. These properties make FeFETs ideal candidates for artificial synapses in neuromorphic architectures, supporting deep neural networks and spiking neural networks based on leaky-integrate-and-fire (LIF) mechanisms. Beyond neuromorphic computing, FeFETs also play a crucial role in physical reservoir computing, leveraging their intrinsic nonlinear and history-dependent behavior for efficient real-time learning. This approach offers significant advantages for time-series processing and edge artificial intelligence (AI) applications, addressing the growing need for energy-efficient computing. As a result, this article explores the principles, key demonstrations, and future potential of FeFET-based neuromorphic and reservoir computing, highlighting their impact on next-generation AI hardware.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fascinating physics at the edge of magnetic fusion devices

Abstract The physics of the processes at the edge of magnetic fusion devices is multifaceted and exhibits complex, nonlinear synergistic effects. Even though this region occupies only a small portion of the whole device, it plays a crucial role in overall plasma confinement, heat exhaust, and plasma–wall interactions. The latter affects not only the performance but also the lifetime of plasma-facing components and therefore remains an outstanding challenge for future fusion reactors. At the edge of fusion devices, researchers are dealing with phenomena including classical and anomalous plasma transport, atomic physics effects, and physics of plasma-facing material under strong irradiation by particle and energy fluxes. The diversity of edge physics makes it particularly attractive for young scientists. Working in this field, they can find endless possibilities to demonstrate their talents and creativity. This short review describes just some of the basic scrape-off layer and divertor plasma phenomena including divertor plasma detachment, intermittent bursts of anomalous cross-field plasma transport, plasma–material interactions, and dust in fusion plasmas, which are of particular interest in relation to fusion reactors.

Physics↗
DOE OSTI2022

The study of contact properties in edge-contacted graphene–aluminum Josephson junctions

Transparent contact interfaces in superconductor–graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge contact fabrication process on the transparency of the superconducting aluminum–graphene junction. We show significant improvement in the transparency of our superconductor–graphene junctions by promoting the chemical component of the edge contact etch process. Our results compare favorably with state-of-the-art graphene Josephson junctions. The findings of our study contribute to advancing the fabrication knowledge of edge-contacted superconductor–graphene junctions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Mesocrystallizing Nanograins for Enhanced Li + Storage

Morphology and crystallinity of electrode materials have a major effect on their charge carrier storage properties when applied in rechargeable batteries. While nanosizing electrode particles (with larger surface area) and maintaining electrode integrity are both good for performance enhancement, they seem to contradict each other and can be hardly well-balanced. Herein, we designed electrode particles consisting of numerous nanograins with uniform crystalline orientation to guarantee both high surface area and high structural integrity, allowing the significant improvement of Li + storage kinetics and performance. Applying this “mesocrystallizing” strategy to a NiCo 2 O 4 -based anode, resulting in various degrees of pseudocapacitance response, the long-term cyclability and rate performance of this material have been largely enhanced. Impressively, the mesocrystalline NiCo 2 O 4 electrode exhibits a high reversible capacity of 1403 mAh g -1 after 200 cycles at 1.6 A g -1 (a rate of 1.8 C). The growth mechanism of mesocrystalline materials with different morphologies is identified to be a topotactic strctural transition process featuring a gradual edge-to-core corrasion process. This work presents an important synthetic clue to balance the morpholgy and crystallinity of battery electrode materials for their perforamnce optimization and is expected to inspire future structural design for battery materials beyond the one prototyped here.

25 ENERGY STORAGE↗
DOE OSTI2024

Edge treatment for spurious mode suppression in thin-film lithium niobate resonators

Abstract Thin-film lithium niobate is an attractive material for RF acoustic devices because of its high electromechanical coupling. However, due to the large coupling and the high anisotropy, thin-film lithium niobate resonators are prone to accidental resonances called spurious modes. These modes compromise the frequency response of the resonators, limiting their use in filter and oscillator applications. In this work, we present a novel method of spurious mode suppression through a special edge treatment etch process. Two thin-film lithium niobate resonators were fabricated, one with smooth sidewalls and one with the edge treatment. It was found that the edge-treated resonators show a weaker spurious mode response. This is potentially a new way to mitigate spurious resonances, a major issue in lithium niobate Lamb wave devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics

Al 0.6 Ga 0.4 N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10 −9 A cm −2 . This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10 5 (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W −1 at a wavelength of 250 nm.

Jeong, Hoon [Department of Electronic Engineering ↗