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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Motorola and National Semiconductor 54HC00 and 54HC74 microcircuits were evaluated using CO-60 to determine their total dose radiation hardness. The devices were found to be radiation soft failing parametrically between 5 and 10 K rads and functionally between 20 and 40 K rads. The failures were bias dependent, relatively insensitive to dose rate, and only annealed moderately when left unbiased at room temperature.
The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect SET system error rates in a radiation environment. If the transients are broadened by TID, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.
A simple model for the soft error rate for dynamic metal-oxide-semiconductor random access memories due to normal galactic radiation was devised and then used to calculate the rate of decrease of the single-event-upset rate with total radiation dose. The computation shows that the decrease in the soft error rate is less than 10 percent per day if the shielding is 0.5 g/sq cm and the spacecraft is in a geosynchronous orbit. The decrease is considerably less in a polar orbiting device.
Ataxia-telangiectasia (A-T) is a radiation-sensitive genetic condition. AT-heterozygous human mammary epithelial cells (HMEC) were irradiated using a Cs137 source in order to compare cell cycle, apoptosis, and marker expression responses across 3 radiation doses. No differences in cell cycle and apoptosis were found with any of the radiation doses used (30, 60, and 90 rads) compared with the unirradiated control (0 rad). At the same doses, however, differences were found in marker expression, such as keratin 18 (kl8), keratin 14 (k14), insulin-like growth factor I receptor (IGF-IR), and connexin 43 (cx43). This may indicate that radiation sensitivity in the heterozygous state may be initiated through signal transduction responses.
This paper presents the results of measurements performed on two different flash memory types, NOR and NAND technologies.
Abstract not provided.
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Poster showing TID data on AFRL Ga2O3 MOSFETs, the mechanisms behind the effects, and some simulations in TCAD
The opportunity to compare cosmic radiation effects caused during long and short duration exposure flights in biological objects are limited until now, and data obtained so far are very rare and insufficient. Because of the very long exposure of the experiment during the Long Duration Exposure Facility (LDEF) mission (approximately 2000 days) structural changes of the hardware material can be expected which will influence its biocompatibility and, thus, will interact with the radiobiological effects. The aim of the experiment flown on LDEF was a detailed investigation of biological effects caused by cosmic radiation especially of particles of high atomic number Z and high energy. The flight hardware consisted of standard BIOSTACK containers; in these containers a special sandwich construction consisted of visual plastic detectors with seed rsp. spore layers interlocked.
The development of military and space electronics technology has traditionally been heavily influenced by the commercial semiconductor industry. The development of MOS technology, and particularly CMOS technology, as dominant commercial technologies has occurred entirely within the lifetime of the NSREC. For this reason, it is not surprising that the study of radiation interactions with MOS materials, devices and circuits has been a major theme of this conference for most of its history. The basic radiation problem in a MOS transistor is illustrated. The application of an appropriate gate voltage causes a conducting channel to form between the source and drain, so that current flows when the device is turned on. In Fig. lb, the effect of ionizing radiation is illustrated. Radiation-induced trapped charge has built up in the gate oxide, which causes a shift in the threshold voltage (that is, a change in the voltage which must be applied to turn the device on). If this shift is large enough, the device cannot be turned off, even at zero volts applied, and the device is said to have failed by going depletion mode.
The operation and efficiency of optocouplers depend on a number of different factors, and the way that these factors are degraded by radiation must be properly understood in order to apply these devices in space systems.
This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.
Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.
The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.
A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
This summary will be submitted for review for the 2025 HEART conference.
The effect of very low dose rates and equivalence of high-temperature irradiation are investigated for several device types that are sensitive to enhanced low dose-rate damage. New results are included at 0.001 rad(si)/s.
Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.