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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Advanced electrical power, distribution and control for the Space Transportation System

High frequency power distribution and management is a technology ready state of development. As such, a system employs the fewest power conversion steps, and employs zero current switching for those steps. It results in the most efficiency, and lowest total parts system count when equivalent systems are compared. The operating voltage and frequency are application specific trade off parameters. However, a 20 kHz Hertz system is suitable for wide range systems.

Hansen, Irving G.↗
NASA NTRS1991

An autonomous fault detection, isolation, and recovery system for a 20-kHz electric power distribution test bed

Future space explorations will require long term human presence in space. Space environments that provide working and living quarters for manned missions are becoming increasingly larger and more sophisticated. Monitor and control of the space environment subsystems by expert system software, which emulate human reasoning processes, could maintain the health of the subsystems and help reduce the human workload. The autonomous power expert (APEX) system was developed to emulate a human expert's reasoning processes used to diagnose fault conditions in the domain of space power distribution. APEX is a fault detection, isolation, and recovery (FDIR) system, capable of autonomous monitoring and control of the power distribution system. APEX consists of a knowledge base, a data base, an inference engine, and various support and interface software. APEX provides the user with an easy-to-use interactive interface. When a fault is detected, APEX will inform the user of the detection. The user can direct APEX to isolate the probable cause of the fault. Once a fault has been isolated, the user can ask APEX to justify its fault isolation and to recommend actions to correct the fault. APEX implementation and capabilities are discussed.

Quinn, Todd M.↗
NASA NTRS1987

Electric power distribution and load transfer system

A power distribution system includes a plurality of power sources and load transfer units including transistors and diodes connected in series and leading to a common power output, each of the transistors being controller switchable subject to voltage levels of the respective input and output sides of said transistors, and the voltage and current level of said common power output. The system is part of an interconnection scheme in which all but one of the power sources is connected to a single load transfer unit, enabling the survival of at least a single power source with the failure of one of the load transfer units.

Bradford, Michael P.↗
NASA NTRS1989

Electric power distribution and load transfer system

A power distribution system includes a plurality of power sources and load transfer units including transistors and diodes connected in series and leading to a common power output, each of the transistors being controller switchable subject to voltage levels of the respective input and output sides of said transistors, and the voltage and current level of said common power output. The system is part of an interconnection scheme in which all but one of the power sources is connected to a single load transfer unit, enabling the survival of at least a single power source with the failure of one of the load transfer units.

Bradford, Michael P.↗
NASA NTRS2001

Silicon Carbide Solar Cells Investigated

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Bailey, Sheila G.↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS2004

Reproducible Growth of High-Quality Cubic-SiC Layers

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1993

Model-based reasoning for power system management using KATE and the SSM/PMAD

The overall goal of this research effort has been the development of a software system which automates tasks related to monitoring and controlling electrical power distribution in spacecraft electrical power systems. The resulting software system is called the Intelligent Power Controller (IPC). The specific tasks performed by the IPC include continuous monitoring of the flow of power from a source to a set of loads, fast detection of anomalous behavior indicating a fault to one of the components of the distribution systems, generation of diagnosis (explanation) of anomalous behavior, isolation of faulty object from remainder of system, and maintenance of flow of power to critical loads and systems (e.g. life-support) despite fault conditions being present (recovery). The IPC system has evolved out of KATE (Knowledge-based Autonomous Test Engineer), developed at NASA-KSC. KATE consists of a set of software tools for developing and applying structure and behavior models to monitoring, diagnostic, and control applications.

Morris, Robert A.↗
NASA NTRS1972

Space vehicle electrical power processing distribution and control study. Volume 1: Summary

A concept for the processing, distribution, and control of electric power for manned space vehicles and future aircraft is presented. Emphasis is placed on the requirements of the space station and space shuttle configurations. The systems involved are referred to as the processing distribution and control system (PDCS), electrical power system (EPS), and electric power generation system (EPGS).

Krausz, A.↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1980

Electric power processing, distribution, management and energy storage

Power distribution subsystems are required for three elements of the SPS program: (1) orbiting satellite, (2) ground rectenna, and (3) Electric Orbiting Transfer Vehicle (EOTV). Power distribution subsystems receive electrical power from the energy conversion subsystem and provide the power busses rotary power transfer devices, switchgear, power processing, energy storage, and power management required to deliver control, high voltage plasma interactions, electric thruster interactions, and spacecraft charging of the SPS and the EOTV are also included as part of the power distribution subsystem design.

Giudici, R. J.↗
NASA NTRS2013

Revolutionary Aeropropulsion Concept for Sustainable Aviation: Turboelectric Distributed Propulsion

In response to growing aviation demands and concerns about the environment and energy usage, a team at NASA proposed and examined a revolutionary aeropropulsion concept, a turboelectric distributed propulsion system, which employs multiple electric motor-driven propulsors that are distributed on a large transport vehicle. The power to drive these electric propulsors is generated by separately located gas-turbine-driven electric generators on the airframe. This arrangement enables the use of many small-distributed propulsors, allowing a very high effective bypass ratio, while retaining the superior efficiency of large core engines, which are physically separated but connected to the propulsors through electric power lines. Because of the physical separation of propulsors from power generating devices, a new class of vehicles with unprecedented performance employing such revolutionary propulsion system is possible in vehicle design. One such vehicle currently being investigated by NASA is called the "N3-X" that uses a hybrid-wing-body for an airframe and superconducting generators, motors, and transmission lines for its propulsion system. On the N3-X these new degrees of design freedom are used (1) to place two large turboshaft engines driving generators in freestream conditions to minimize total pressure losses and (2) to embed a broad continuous array of 14 motor-driven fans on the upper surface of the aircraft near the trailing edge of the hybrid-wing-body airframe to maximize propulsive efficiency by ingesting thick airframe boundary layer flow. Through a system analysis in engine cycle and weight estimation, it was determined that the N3-X would be able to achieve a reduction of 70% or 72% (depending on the cooling system) in energy usage relative to the reference aircraft, a Boeing 777-200LR. Since the high-power electric system is used in its propulsion system, a study of the electric power distribution system was performed to identify critical dynamic and safety issues. This paper presents some of the features and issues associated with the turboelectric distributed propulsion system and summarizes the recent study results, including the high electric power distribution, in the analysis of the N3-X vehicle.

Kim, Hyun Dae↗
NASA NTRS1987

Mathematical model for the dc-ac inverter for the Space Shuttle

The reader is informed of what was done for the mathematical modeling of the dc-ac inverter for the Space Shuttle. The mathematical modeling of the dc-ac inverter is an essential element in the modeling of the electrical power distribution system of the Space Shuttle. The electrical power distribution system which is present on the Space Shuttle is made up to 3 strings each having a fuel cell which provides dc to those systems which require dc, and the inverters which convert the dc to ac for those elements which require ac. The inverters are units which are 2 wire structures for the main dc inputs and 2 wire structures for the ac output. When 3 are connected together a 4 wire wye connection results on the ac side. The method of modeling is performed by using a Least Squares curve fitting method. A computer program is presented for implementation of the model along with graphs and tables to demonstrate the accuracy of the model.

Berry, Frederick C.↗
NASA NTRS2011

Selected Lessons Learned in Space Shuttle Orbiter Propulsion and Power Subsystems

Over its 30 years of space flight history, plus the nearly 10 years of design, development test and evaluation, the Space Shuttle Orbiter is full of lessons learned in all of its numerous and complex subsystems. In the current paper, only selected lessons learned in the areas of the Orbiter propulsion and power subsystems will be described. The particular Orbiter subsystems include: Auxiliary Power Unit (APU), Hydraulics and Water Spray Boiler (WSB), Mechanical Flight Controls, Main Propulsion System (MPS), Fuel Cells and Power Reactant and Storage Devices (PRSD), Orbital Maneuvering System (OMS), Reaction Control System (RCS), Electrical Power Distribution (EPDC), electrical wiring and pyrotechnics. Given the complexity and extensive history of each of these subsystems, and the limited scope of this paper, it is impossible to include most of the lessons learned; instead the attempt will be to present a selected few or key lessons, in the judgment of the authors. Each subsystem is presented separate, beginning with an overview of the hardware and their function, a short description of a few historical problems and their lessons, followed by a more comprehensive table listing of the major subsystem problems and lessons. These tables serve as a quick reference for lessons learned in each subsystem. In addition, this paper will establish common lessons across subsystems as well as concentrate on those lessons which are deemed to have the highest applicability to future space flight programs.

Hernandez, Francisco J.↗
NASA NTRS1995

Description of a MIL-STD-1553B Data Bus Ada Driver for the LeRC EPS Testbed

This document describes the software designed to provide communication between control computers in the NASA Lewis Research Center Electrical Power System Testbed using MIL-STD-1553B. The software drivers are coded in the Ada programming language and were developed on a MSDOS-based computer workstation. The Electrical Power System (EPS) Testbed is a reduced-scale prototype space station electrical power system. The power system manages and distributes electrical power from the sources (batteries or photovoltaic arrays) to the end-user loads. The electrical system primary operates at 120 volts DC, and the secondary system operates at 28 volts DC. The devices which direct the flow of electrical power are controlled by a network of six control computers. Data and control messages are passed between the computers using the MIL-STD-1553B network. One of the computers, the Power Management Controller (PMC), controls the primary power distribution and another, the Load Management Controller (LMC), controls the secondary power distribution. Each of these computers communicates with two other computers which act as subsidiary controllers. These subsidiary controllers are, in turn, connected to the devices which directly control the flow of electrical power.

Mackin, Michael A.↗