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Research into the properties of narrow band gap materials during the period 15 Jun. to 15 Dec. 1991 is discussed. Abstracts and bibliographies from papers presented during this period are reported. Graphs are provided.
Results of tests designed to compare the charging properties of spacecraft material under a monoenergetic beam and under a continuously distributed beam are summarized. In the test setup the electron source was mounted in the top of a cylindrical vacuum chamber. A sheet of 5-mil-thick Kapton was placed on an insulated metal substrate at the bottom of the vacuum chamber. The dc current arriving on the substrate was measured and a field meter measured the potential of the test sample. A retarding potential analyzer measured the energy spectrum of the incident electron beam. With the monoenergetic beam, the sample charged to 12 kV and electrical discharges occurred. With the multi-energy spectra the samples charged to only 6 kV and 4 kV, and no discharger were observed. In these experiments, no effort was made to duplicate the spectra occurring in space. The tests were intended to simply to compare spacecraft material charging properties using monoenergetic and continuous multi-energy beams.
The surface of a material is textured and by exposing the surface to pulses from an ultrafast laser. The laser treatment causes pillars to form on the treated surface. These pillars provide for greater light absorption. Texturing and crystallization can be carried out as a single step process. The crystallization of the material provides for higher electric conductivity and changes in optical and electronic properties of the material. The method may be performed in vacuum or a gaseous environment. The gaseous environment may aid in texturing and/or modifying physical and chemical properties of the surfaces. This method may be used on various material surfaces, such as semiconductors, metals and their alloys, ceramics, polymers, glasses, composites, as well as crystalline, nanocrystalline, polycrystalline, microcrystalline, and amorphous phases.
SiC as a highly promising semiconducting material has received increasing attention in the last decade. The impurities such as oxygen and hydrogen have a great effect in electronic properties of semiconducting materials. In this study, the FTIR spectra were measured at room temperature (25 C) and low temperature (-70 C) for an n-type SiC substrate, a p-type epitaxial layer SiC, and patterned Ta on a p-type epitaxial layer SiC sample. The oxygen related IR peaks were measured for all three samples at room and low temperatures. The peak at 1105 cm(exp -1) is the result of a substitutional carbon and a interstitial oxygen in SiC. The concentration of the impurity oxygen increases in the SiC epitaxial layer during the CVD and electron beam processes. For the n-type SiC substrate, this peak does not appear. The peak at 905 cm(exp -1) exists in the IR spectra only for two epitaxial layer on p-type SiC substrate samples. This peak is related to oxygen vacancy centers in SiC, which are introduced in the CVD epitaxial growth process. At low temperature, the peak at 1105 cm(exp -1) shifts down and the peak at 905 cm(exp -1) shifts up for the epitaxial layer SiC samples. It can be explained that, at low temperatures, the stress increases due to the distorted bonds. The study shows that FTIR is a very effective method to evaluate low concentration impurities in SiC.
Carbon nanotube material having an outer diameter less than 10 nm and a number of walls less than ten are disclosed. Also disclosed are an electron field emission device including a substrate, an optionally layer of adhesion-promoting layer, and a layer of electron field emission material. The electron field emission material includes a carbon nanotube having a number of concentric graphene shells per tube of from two to ten, an outer diameter from 2 to 8 nm, and a nanotube length greater than 0.1 microns. One method to fabricate carbon nanotubes includes the steps of (a) producing a catalyst containing Fe and Mo supported on MgO powder, (b) using a mixture of hydrogen and carbon containing gas as precursors, and (c) heating the catalyst to a temperature above 950.degree. C. to produce a carbon nanotube. Another method of fabricating an electron field emission cathode includes the steps of (a) synthesizing electron field emission materials containing carbon nanotubes with a number of concentric graphene shells per tube from two to ten, an outer diameter of from 2 to 8 nm, and a length greater than 0.1 microns, (b) dispersing the electron field emission material in a suitable solvent, (c) depositing the electron field emission materials onto a substrate, and (d) annealing the substrate.
Researchers from NASA and Oak Ridge National Laboratory are evaluating a series of electron beam curable composites for application in reusable launch vehicle airframe and propulsion systems. Objectives are to develop electron beam curable composites that are useful at cryogenic to elevated temperatures (-217 C to 200 C), validate key mechanical properties of these composites, and demonstrate cost-saving fabrication methods at the subcomponent level. Electron beam curing of polymer matrix composites is an enabling capability for production of aerospace structures in a non-autoclave process. Payoffs of this technology will be fabrication of composite structures at room temperature, reduced tooling cost and cure time, and improvements in component durability. This presentation covers the results of material property evaluations for electron beam-cured composites made with either unidirectional tape or woven fabric architectures. Resin systems have been evaluated for performance in ambient, cryogenic, and elevated temperature conditions. Results for electron beam composites and similar composites cured in conventional processes are reviewed for comparison. Fabrication demonstrations were also performed for electron beam-cured composite airframe and propulsion piping subcomponents. These parts have been built to validate manufacturing methods with electron beam composite materials, to evaluate electron beam curing processing parameters, and to demonstrate lightweight, low-cost tooling options.
The hot workability of polycrystalline silicon was studied. Uniaxail stress-strain curves are given for strain rates in the range of .0001 to .1/sec and temperatures from 1100 to 1380 C. At the highest strain rates at 1380 C axial strains in excess of 20% were easily obtainable without cracking. After deformations of 36%, recrystallization was completed within 0.1 hr at 1380 C. When the recrystallization was complete, there was still a small volume fraction of unrecyrstallized material which appeared very stable and may degrade the electronic properties of the bulk materials. Texture measurements showed that the as-produced vapor deposited polycrystalline rods have a 110 fiber texture with the 110 direction parallel to the growth direction and no preferred orientation about this axis. Upon axial compression perpendicular to the growth direction, the former 110 fiber axis changed to 111 and the compression axis became 110 . Recrystallization changed the texture to 110 along the former fiber axis and to 100 along the compression axis.
Since their discovery in 1991, carbon nanotubes have been the subject of intense research interest based on early predictions of their unique mechanical, electronic, and chemical properties. Materials with the predicted unique properties of carbon nanotubes are of great interest for use in future generations of aerospace vehicles. For their structural properties, carbon nanotubes could be used as reinforcing fibers in ultralight multifunctional composites. For their electronic properties, carbon nanotubes offer the potential of very high-speed, low-power computing elements, high-density data storage, and unique sensors. In a continuing effort to model and predict the properties of carbon nanotubes, Ames accomplished three significant results during FY99. First, accurate values of the nanomechanics and plasticity of carbon nanotubes based on quantum molecular dynamics simulations were computed. Second, the concept of mechanical deformation catalyzed-kinky-chemistry as a means to control local chemistry of nanotubes was discovered. Third, the ease of nano-indentation of silicon surfaces with carbon nanotubes was established. The elastic response and plastic failure mechanisms of single-wall nanotubes were investigated by means of quantum molecular dynamics simulations.
The ultimate objective of the thin-film program at NASA GRC is development of a 20 percent AM0 thin-film device technology with high power/weight ratio. Several approaches are outlined to improve overall device efficiency and power/weight ratio. One approach involves the use of very lightweight flexible substrates such as polyimides (i.e., Kapton(Trademark)) or metal foil. Also, a compound semiconductor tandem device structure that can meet this objective is proposed and simulated using Analysis of Microelectronic and Photonic Structures (AMPS). AMPS modeling of current devices in tandem format indicate that AM0 efficiencies near 20 percent can be achieved. And with improvements in materials, efficiencies approaching 25 percent are achievable. Several important technical issues need to be resolved to realize these complex devices: development of a wide bandgap material with good electronic properties, development of transparent contacts, and targeting a 2-terminal device structure (with more complicated processing and tunnel junction) or 4-terminal device. Recent progress in the NASA GRC program is outlined.
Increasing interest in environmental geochemistry has led to the recognition that crystals with sizes in the nanometer range (e.g., colloids and nanoscale precipitates) and poorly crystalline compounds (e.g., ferrihydrites) may comprise the majority of reactive mineral surface area near the Earth s surface. When the diameters of individual particles are in the range of 100 nm or less, the surface energy contribution to the free energy modifies phase stability. This results in stabilization of polymorphs not normally encountered in the macrocrystal domain. These phases potentially have very different surface-site geometries, adsorptive properties, and growth mechanisms, and exhibit size-dependent kinetic behavior. Thus nanophases dramatically modify the physical and chemical properties of soils and sediments. In a more general sense, the characteristics of nanocrystals are of intense technological interest because small particle size confers novel chemical, optical, and electronic properties. Thus, nanocrystalline materials are finding applications as catalytic substrates, gas phase separation materials, and even more importantly in the field of medicine. This is an opportune time for mineral physicists working on nanocrystalline materials to develop collaborative efforts with materials scientists, chemists, and others working on nanophase materials of technological interest (e.g., for magnetic memories). Our objective in this study was to synthesize submicron (<200 nm) magnetite and to study their thermal and particle size properties.
Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.
Microelectromechanical systems (MEMS) embodies the integration of sensors, actuators, and electronics on a single substrate using integrated circuit fabrication techniques and compatible bulk and surface micromachining processes. Silicon and its derivatives form the material base for the MEMS technology. MEMS devices, including microsensors and microactuators, are attractive because they can be made small (characteristic dimension about 100 microns), be produced in large numbers with uniform performance, include electronics for high performance and sophisticated functionality, and be inexpensive. For aerodynamic measurements, it is preferred that sensors be small so as to approximate measurement at a point, and in fact, MEMS pressure sensors, wall shear-stress sensors, heat flux sensors and micromachined hot wires are nearing application. For the envisioned application to wind tunnel models, MEMS sensors can be placed on the surface or in very shallow grooves. MEMS devices have often been fabricated on stiff, flat silicon substrates, about 0.5 mm thick, and therefore were not easily mounted on curved surfaces. However, flexible substrates are now available and heat-flux sensor arrays have been wrapped around a curved turbine blade. Electrical leads can also be built into the flexible substrate. Thus MEMS instrumented wind tunnel models do not require deep spanwise grooves for tubes and leads that compromise the strength of conventionally instrumented models. With MEMS, even the electrical leads can potentially be eliminated if telemetry of the signals to an appropriate receiver can be implemented. While semiconductor silicon is well known for its electronic properties, it is also an excellent mechanical material for MEMS applications. However, silicon electronics are limited to operations below about 200 C, and silicon's mechanical properties start to diminish above 400 C. In recent years, silicon carbide (SiC) has emerged as the leading material candidate for applications in high temperature environments and can be used for high-temperature MEMS applications. With SiC, diodes and more complex electronics have been shown to operate to about 600 C, while the mechanical properties of SiC are maintained to much higher temperatures. Even when MEMS devices show benefits in the laboratory, there are many packaging challenges for any aeronautics application. Incorporating MEMS into these applications requires new approaches to packaging that goes beyond traditional integrated circuit (IC) packaging technologies. MEMS must interact mechanically, as well as electrically with their environment, making most traditional chip packaging and mounting techniques inadequate. Wind tunnels operate over wide temperature ranges in an environment that is far from being a 'clean-room.' In flight, aircraft are exposed to natural elements (e.g. rain, sun, ice, insects and dirt) and operational interferences(e.g. cleaning and deicing fluids, and maintenance crews). In propulsion systems applications, MEMS devices will have to operate in environments containing gases with very high temperatures, abrasive particles and combustion products. Hence deployment and packaging that maintains the integrity of the MEMS system is crucial. This paper presents an overview of MEMS fabrication and materials, descriptions of available sensors with more details on those being developed in our laboratories, and a discussion of sensor deployment options for wind tunnel and flight applications.
Single-wall carbon nanotubes (SWNTs) are very interesting materials because of their morphology, electronic and mechanical properties. Its morphology (high length-to-diameter ratio) and electronic properties suggest potential application of SWNTs as anode material for lithium ion secondary batteries. The introduction of SWNTs on these types of sources systems will improve their performance, efficiency, and capacity to store energy. A purification method has been applied for the removal of iron and amorphous carbon from the nanotubes. Unpurified and purified SWNTs were characterized by transmission electron microscopy (TEM), and thermogravimetric analysis (TGA). In order to attach carbon nanotubes on platinum electrode surfaces, a self-assembled monolayer (SAM) of 4-aminothiophenol (4-ATP) was deposited over the electrodes. The amino-terminated SAM obtained was characterized by cyclic voltammetry, X-ray photoelectron spectroscopy (XPS), and Fourier-transforms infrared (FTIR) spectroscopy. Carbon nanotubes were deposited over the amino-terminated SAM by an amide bond formed between SAM amino groups and carboxylic acid groups at the open ends of the carbon nanotubes.This deposition was characterized using Raman spectroscopy and Scanning Electron microscopy (SEM).
Physical, electrical, and mechanical property tests at temperatures between -125 and 125 deg C of dielectric materials for electronic packaging
Microcellular nanocomposite foams and sandwich structures have been created to have excellent electrical conductivity and radiation-resistant properties using a new method that does not involve or release any toxicity. The nanocomposite structures have been scaled up in size to 12 X 12 in. (30 X 30 cm) for components fabrication. These sandwich materials were fabricated mainly from PE, CNF, and carbon fibers. Test results indicate that they have very good compression and compression-after-impact properties, excellent electrical conductivity, and superior space environment durability. Compression tests show that 1000 ESH (equivalent Sun hours) of UV exposure has no effect on the structural properties of the sandwich structures. The structures are considerably lighter than aluminum alloy (= 36 percent lighter), which translates to 36 percent weight savings of the electronic enclosure and its housing. The good mechanical properties of the materials may enable the electronic housing to be fabricated with a thinner structure that further reduces the weight. There was no difficulty in machining the sandwich specimens into electronic enclosure housing.
The Center for Information and Numerical Data Analysis and Synthesis, (CINDAS), measures and maintains databases on thermophysical, thermoradiative, mechanical, optical, electronic, ablation, and physical properties of materials. Emphasis is on aerospace structural materials especially composites and on infrared detector/sensor materials. Within CINDAS, the Department of Defense sponsors at Purdue several centers: the High Temperature Material Information Analysis Center (HTMIAC), the Ceramics Information Analysis Center (CIAC) and the Metals Information Analysis Center (MIAC). The responsibilities of CINDAS are extremely broad encompassing basic and applied research, measurement of the properties of thin wires and thin foils as well as bulk materials, acquisition and search of world-wide literature, critical evaluation of data, generation of estimated values to fill data voids, investigation of constitutive, structural, processing, environmental, and rapid heating and loading effects, and dissemination of data. Liquids, gases, molten materials and solids are all considered. The responsibility of maintaining widely used databases includes data evaluation, analysis, correlation, and synthesis. Material property data recorded on the literature are often conflicting, diverging, and subject to large uncertainties. It is admittedly difficult to accurately measure materials properties. Systematic and random errors both enter. Some errors result from lack of characterization of the material itself (impurity effects). In some cases assumed boundary conditions corresponding to a theoretical model are not obtained in the experiments. Stray heat flows and losses must be accounted for. Some experimental methods are inappropriate and in other cases appropriate methods are carried out with poor technique. Conflicts in data may be resolved by curve fitting of the data to theoretical or empirical models or correlation in terms of various affecting parameters. Reasons (e.g. phase transitions) must be found for unusual dependence or any anomaly. Such critical evaluation involves knowledge of theory, experience in measurement, familiarity with metallurgy (microstructural behavior) and not inconsiderable judgment. An examination of typical data compiled and analyzed by CINDAS shows that the thermal conductivity of a material reported in the literature may vary by a factor of two of more; the range of reported values increases as temperature increases reflecting the difficulty of high temperature measurements. Often only estimates of melt behavior are available, despite the importance of melt properties in modeling, welding, or other solidification processes. There may be only a few measurements available for properties such as kinematic viscosity, even for widely used materials such as stainless steel. In the face of such a paucity of existing data and in a national environment where too few new data are being generated it is nonetheless the responsibility of CINDAS to select and disseminate recommended values of a wide variety of thermophysical properties.
When dispersed or mixed immiscibles are solidified on earth, a large amount of separation of the constituents takes place due to differences in densities. However, when the immiscibles are dispersed and solidified in zero-gravity, density separation does not occur, and unique composite solids can be formed with many new and promising electrical properties. By measuring the electrical resistivity and superconducting critical temperature of zero-g processed Ga-Bi samples, it has been found that the electrical properties of such materials are entirely different from the basic constituents and the ground control samples. The finest dispersions are obtained only in a low-gravity environment. Our results indicate that space-processed immiscible materials may form an entirely new class of electronic materials. The interesting electrical properties of directionally solidified Al-Cu eutectic, a two-component alloy consisting of Al and Al2Cu which was processed on Skylab (M566) are briefly reviewed. The electrical resistivity of directionally solidified eutectics with a lamellar structure are highly anisotropic and have been studied both experimentally and theoretically. The local resistivity of the space-processed samples are compared to a ground control sample and to the expected theoretical results.
Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.