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Compilation of information on design procedures, electrical properties, and fabrication. Guide provides information on design procedures; magnetic and insulating material electrical properties; impregnating, encapsulating and processing techniques.
Photovoltaic applications of perovskite semiconductor material systems have generated considerable interest in part because of predictions that primary defect energy levels reside outside the bandgap. We present experimental evidence that this enabling material property is present in the halide-lead perovskite, CH3NH3PbI3 (MAPbI3), consistent with theoretical predictions. By performing X-ray photoemission spectroscopy, we induce and track dynamic chemical and electronic transformations in the perovskite. These data show compositional changes that begin immediately with exposure to X-ray irradiation, whereas the predominant electronic structure of the thin film on compact TiO2 appears tolerant to the formation of compensating defect pairs of VI and VMA and for a large range of I/Pb ratios. Changing film composition is correlated with a shift of the valence-band maximum only as the halide-lead ratio drops below 2.5. This delay is attributed to the invariance of MAPbI3 electronic structure to distributed defects that can significantly transform the electronic density of states only when in high concentrations.
Graphene based electronic devices due to its unique properties has transformed electronics. A Graphene Field Effect Transistor (GNRFET) model is simulated in Virtual Nano Lab (VNL) and the calculations are based on density functional theory (DFT). Simulations were performed on this pristine GNRFET model and the transmission spectrum was observed. The graph obtained showed a uniform energy gap of +1 to −1eV and the highest transmission peak at −1.75 eV. To this pristine model of GNRFET, doping was introduced and its effect was seen on the Fermi level obtained in the transmission spectrum. Boron as a dopant was used which showed variations in both the transmission peaks and the energy gap. In this model, first the single boron was substituted in place of carbon and Fermi level showed an energy gap of 1.5 to −0.5eV with the highest transmission peak at −1.3 eV. In another variation in the model, two carbon atoms were replaced by two boron atoms and Fermi level shifted from 2 to 0.25eV. In this observation, the highest transmission peak was observed at −1(approx.). The use of nanoelectronic devices have opened many areas of applications as GFET is an excellent building block for electronic circuits, and is being used in applications such as high-performance frequency doublers and mixers, digital modulators, phase detectors, optoelectronics and spintronics.
Quasi–two-dimensional transition metal dichalcogenides exhibit dramatic properties that may transform electronic and photonic devices. We report on how the anomalously large magnetoresistance (MR) observed under high magnetic field in MoTe 2 , a type II Weyl semimetal, can be reversibly controlled under tensile strain. The MR is enhanced by as much as ~30% at low temperatures and high magnetic fields when uniaxial strain is applied along the a crystallographic direction and reduced by about the same amount when strain is applied along the b direction. We show that the large in-plane electric anisotropy is coupled with the structural transition from the 1T' monoclinic to the T d orthorhombic Weyl phase. A shift of the T d -1T' phase boundary is achieved by minimal tensile strain. The sensitivity of the MR to tensile strain suggests the possibility of a nontrivial spin-orbital texture of the electron and hole pockets in the vicinity of Weyl points. Our ab initio calculations show a significant orbital mixing on the Fermi surface, which is modified by the tensile strains.
Here, in this study, we utilize an in situ Fourier transform infrared (FTIR) spectroscopy chamber equipped with an electron flood gun to comprehensively investigate the electron-induced chemical transformations in advanced inorganic–organic hybrid resist thin films. The characteristics of the electron gun were assessed, showing a detectable current decrease with increasing Faraday cup bias voltage, confirming that the electron energies impacting the sample were within the expected range. This unique FTIR system was applied to study two hybrid resist thin-film systems, Al–HQ and Zn–HQ, both exhibiting saturation growth characteristics at 150 °C. Results revealed that Al–HQ demonstrated superior electron sensitivity compared to Zn–HQ at energies ≤ 100 eV. Chemical changes observed were consistent with previous findings, underscoring the potential of this methodology to elucidate exposure mechanisms. This research contributes to the fundamental understanding necessary for the development of advanced resist materials for the next-generation nanolithography applications.
A robust approach for real-time analysis of the scanning transmission electron microscopy (STEM) data streams, based on ensemble learning and iterative training (ELIT) of deep convolutional neural networks, is implemented on an operational microscope, enabling the exploration of the dynamics of specific atomic configurations under electron beam irradiation via an automated experiment in STEM. Combined with beam control, this approach allows studying beam effects on selected atomic groups and chemical bonds in a fully automated mode. Here, in this study, we demonstrate atomically precise engineering of single vacancy lines in transition metal dichalcogenides and the creation and identification of topological defects in graphene. The ELIT-based approach facilitates direct on-the-fly analysis of the STEM data and engenders real-time feedback schemes for probing electron beam chemistry, atomic manipulation, and atom by atom assembly.
The rapid advancements in low-power portable/wearable electronic devices require concurrent development of technologies that can provide power without the need for bulky, heavy battery storage. Electronic ratchets, asymmetric transistor-based devices that can convert AC signals or electronic noise into DC power, have been proposed as one solution to this growing need. Here, the recent demonstration of conjugated polymer-based electronic ratchets offers a route toward lightweight, flexible power sources for portable applications. Here we demonstrate the fabrication of the first electronic ratchets where the active channel component consists of semiconducting single-walled carbon nanotubes (s-SWCNTs), which can transform electronic noise or AC signals to a stable DC current with higher output power (up to ca. 14 mW for a chemically doped device) than their polymer-based analogs. We also show that patterning of the dopant profile in the s-SWCNT channel enables reasonable power conversion performance (ca. 3.5 mW) with improved stability relative to homogeneously doped devices. Our findings demonstrate the promise for s-SWCNT electronic ratchets as energy harvesting devices for portable, low-power applications.
Abstract not provided
Surface reconstruction of complex metal oxides refers to the alterations of the topmost catalyst surface, relative to the bulk structure, following exposure to pretreatment or reaction conditions during heterogeneous catalysis. (1) This structural and electronic transformation may involve (1) changes of the exposed crystallographic facets, (2) changes in chemical composition, such as the enrichment of specific elements, and, (3) morphological variations, including surface roughness and defects (Scheme 1). Beyond relaxation, surface reconstruction here also encompasses disruptions to the periodicity of the sublayers and changes to its stoichiometry. This change significantly influences the chemical properties of the catalyst surface, such as redox sites, (2) acid/base pairs, hydroxyl groups, (3) and surface defects. Surface reconstruction occurs due to the thermodynamic drive to lower the surface energy of the catalyst under the surrounding environment (e.g., temperature, chemical potential of species present). In addition to the treatment or reaction conditions, the extent of reconstruction also depends on the elements in the metal oxide structure. For instance, annealing ABO 3 perovskites (SrTiO 3 , BaTiO 3 , and BaZrO 3 ) at high temperatures (500 °C) in O 2 has a very different impact on the A/B ratio at the surface (ranging from 0.9 to 2.5), depending on the identity of A and B. (4) Metal oxide surface reconstruction under an electric field and exposure to acidic and alkaline media has recently gained increased attention in electrocatalysis, such as in the oxygen evolution reaction (OER); (5,6) however, in this Viewpoint we focus on the impact of surface reconstruction on thermal catalysis, a critical enduring research theme with ongoing challenges. Here, we start showcasing approaches to characterize surface reconstruction at the topmost surface layer, such as low-energy ion scattering (LEIS), discussing advantages and limitations. Next, we connect characterization of surface reconstruction to site-specific kinetic analysis, enabled via steady-state isotopic transient kinetic analysis (SSITKA), and we express our viewpoint on building structure–performance relationships by deeply understanding reconstructed surfaces. Later, we comment on the potential of tuning surface reconstruction to enhance catalytic performance. Finally, we explore the interplay between surface reconstruction and the “intelligent behavior”.
Due to its element and site specificity, inner-shell photoelectron spectroscopy is a widely used technique to probe the chemical structure of matter. Here, we show that time-resolved inner-shell photoelectron spectroscopy can be employed to observe ultrafast chemical reactions and the electronic response to the nuclear motion with high sensitivity. The ultraviolet dissociation of iodomethane (CH 3 I) is investigated by ionization above the iodine 4d edge, using time-resolved inner-shell photoelectron and photoion spectroscopy. The dynamics observed in the photoelectron spectra appear earlier and are faster than those seen in the iodine fragments. Finally, the experimental results are interpreted using crystal-field and spin-orbit configuration interaction calculations, and demonstrate that time-resolved inner-shell photoelectron spectroscopy is a powerful tool to directly track ultrafast structural and electronic transformations in gas-phase molecules.
The reported findings herein are a result of a collaboration between the groups of Claudia Turro at The Ohio State University (DE-SC0010542) and Kim R. Dunbar at Texas A&M University (DE-SC0010721). The Turro and Dunbar groups jointly discovered that cationic d 7 –d 7 Rh 2 (II,II) complexes bridged by electron-donating formamidinate (form) ligands possess redox-active excited states that are relatively long-lived and can engage in charge transfer reactions. As part of the present grant we designed new complexes that exhibit strong absorption from the UV to ~800 nm. The Rh 2 (II,II) complexes under investigation are poised to undergo catalytic reduction of substrates because they are robust to changes in metal oxidation state, the two metals and the two diimine ligands, together with the non-innocent bridges, can be used to store redox equivalents, making these complexes capable of coupling one-electron events with multi-electron transformations. We discovered the electrocatalytic reduction of H + and CO 2 by complexes that are able to electrocatalytically reduce H + to H 2 with high turnover frequencies (TOFs) and overpotentials, η, of ~0.5 V,8 as well as to reduce CO 2 to HCOOH. We now have experimental evidence that both the production of H 2 from H + and HCOOH. The molecular catalysts are stable after the acid and/or CO 2 is consumed since electrocatalysis is restored at the same rate upon the addition of substrate to the cell.8,9 Moreover, we showed that the catalysis is not a result of a decomposition product deposited on the electrode, since placing an electrode from an active electrocatalytic solution into one that does not contain catalyst completely shuts down the reactivity. We are currently exploring the reactivity of these complexes in hydride transfer reactions with other substrates and in the presence of CO 2 and reducing agents, as well as attempting to grow single crystals for x-ray diffraction.
This presentation focuses on the challenge of integrating AI-driven data centers with the power grid at scale. It examines the AI data center capacity challenge and the role of new Medium Voltage Direct Current (MVDC) and other grid-enhancing technologies in enabling efficient and reliable power delivery. The session will highlight the National Laboratory of the Rockies' ARIES capabilities and planning tools, along with collaborative examples involving Verrus, Compass, and Schneider through the Agora test bed for grid-friendly data center evaluations, and ON. Energy for UPS evaluation. It will showcase the NLR Stable Grid Platform for studying oscillations caused by large-scale data centers, along with planning tools to assess grid security and reliability. Additionally, the presentation covers reconductoring strategies to increase grid capacity and explores innovative data center architectures, including the Advanced DC Architectures with Power-electronic Transformers (ADAPT) platform, which enables testing of complete DC architectures for data centers.
Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.
Data bases built from the source literature are plagued by problems of data quality. Unless the data acquisition is done by experts, working slowly, the data base may contain so much garbage that true signals and patterns cannot be detected. On the other hand, high quality data bases develop so slowly that satisfactory statistical analysis may never be possible due to the small sample sizes. Results of a test are presented of the opposite strategy: rapid data acquisition by non-experts with minimal control on data quality. A published list of 186 species and genera of fossil invertibrates of the latest Cretaceous Age (Maestrichtian) were located through a random search of the paleobiological and geological literature. The geographic location for each faunal list was then transformed electronically to Maestrichtian latitude and longitude and the lists were further digested to identify the genera occurring in each ten-degree, latitude-longitude block. The geographical lists were clustered using the Otsuka similarity coefficient and a standard unweight-pair-group method. The resulting clusters are remarkably consistent geographically, indicating that a strong biogeographic signal is visible despite low-quality data. A further test evaluated the geographic pattern of end-Cretaceaous extinctions. All genera in the data base were compared with Sepkoski's compendium of time ranges of genera to determine which of the reported genera survived the Cretaceous mass extinction. In turn, extinction rates for the ten-degree, latitude-longitude blocks were mapped. The resulting distribution is readily interpretable as a robust pattern of the geography of the mass extinction. The study demonstrates that a low-quality data base, built rapidly, can provide a basis for meaningful analysis of past biotic events.
Omniview, a motionless, noiseless, exceptionally versatile camera was developed for NASA as a receiving device for guiding space robots. The system can see in one direction and provide as many as four views simultaneously. Developed by Omniview, Inc. (formerly TRI) under a NASA Small Business Innovation Research (SBIR) grant, the system's image transformation electronics produce a real-time image from anywhere within a hemispherical field. Lens distortion is removed, and a corrected "flat" view appears on a monitor. Key elements are a high resolution charge coupled device (CCD), image correction circuitry and a microcomputer for image processing. The system can be adapted to existing installations. Applications include security and surveillance, teleconferencing, imaging, virtual reality, broadcast video and military operations. Omniview technology is now called IPIX. The company was founded in 1986 as TeleRobotics International, became Omniview in 1995, and changed its name to Interactive Pictures Corporation in 1997.
In extreme ultraviolet (EUV) photoresist exposure, the primary and secondary electrons drive chemistry rather than the EUV photons themselves. These electrons have a wide range of energies below approximately 80 eV, which are capable of complex network of reactions during exposure. To better understand the ability of electrons of different energies within the EUV primary and secondary electron range, we want to characterize and compare the chemistry induced in pure polymer films by direct exposure to electrons. Thin films of poly(tert-butyl methacrylate), poly(methyl methacrylate), and poly(4-hydroxystyrene) were exposed to a 20 to 80 eV electron beam. Outgassing during exposure was characterized in-situ using a quadrupole residual gas analyzer. The thickness changes were measured using ellipsometry and chemical bond structure data were collected using Fourier-transform infrared spectroscopy (FTIR) after exposure to compare different exposure conditions. Poly(4-hydroxystyrene) demonstrated stability during electron exposures. Exposures of the other two materials led to outgassing of protecting groups, the intensity of which decayed in time. Outgassing, FTIR, and thickness loss data exhibited approximately linear relationships to each other.
The kinetics of the phase transformation of thallium and its dilute alloys were investigated using XRD and calorimetry. Pure thallium exhibits a beta(bcc) to alpha(hcp) phase transformation on cooling at 508 K. With alloying additions, the crystal structure for each phase does not change, although the size of the unit cell increases. The enthalpy and the temperature of phase transformation of each alloy have been determined. The chemical free energy change associated with the phase transformation of each alloy was calculated. The valence electrons make an outstanding contribution to the chemical free energy change required for the phase change.
The rapid advancement and stringent requirements of extreme ultraviolet (EUV) lithography technology necessitate the development of advanced photoresist systems for next-generation microelectronics. Recent studies have demonstrated that inorganic-based hybrid photoresists offer notable improvements in EUV sensitivity, etch resistance, and greater insusceptibility to pattern collapse compared to their purely organic counterparts. However, variations in the synthesis/coating approaches and chemistry of inorganic–organic photoresists can result in distinct exposure mechanisms. In this work, an Al-based hybrid thin film resist system synthesized via molecular (atomic) layer deposition (MLD or MALD) is explored, focusing on its electron-beam and EUV patterning mechanisms. The Al-based hybrid thin films are deposited using trimethylaluminum (TMA) and the organic precursor hydroquinone, exhibiting a saturated growth rate within the temperature range of 150–200°C. In diluted tetramethylammonium hydroxide (TMAH)-based developer solutions, the electron-irradiated Al-based hybrid thin film system behaves as a negative tone resist, achieving a sensitivity of 10.4 mC/cm 2 at 0.1 kV electron beam lithography (EBL). Chemical changes induced by electron exposure are also analyzed in this study using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and a unique infrared spectroscopy setup, revealing the potential cross-linking pathways. To further correlate the electron-induced chemical transformations with those mediated by EUV irradiations, a combination of X-ray photoemission electron microscopy/low-energy electron microscopy (XPEEM/LEEM) system is also employed. In conclusion, this study provides critical insights into the mechanisms underlying solubility switching and contributes to the design of advanced resist materials for EUV lithography.