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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
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NASA NTRS1985

Electricity from photovoltaic solar cells. Flat-Plate Solar Array Project of the US Department of Energy's National Photovoltaics Program: 10 years of progress

The objectives were to develop the flat-plate photovoltaic (PV) array technologies required for large-scale terrestrial use late in the 1980s and in the 1990s; advance crystalline silicon PV technologies; develop the technologies required to convert thin-film PV research results into viable module and array technology; and to stimulate transfer of knowledge of advanced PV materials, solar cells, modules, and arrays to the PV community. Progress reached on attaining these goals, along with future recommendations are discussed.

Christensen, Elmer↗
NASA NTRS1985

A summary report on the Flat-Plate Solar Array Project Workshop on Transparent Conducting Polymers

The proceedings and technical discussions of a workshop on Transparent Conducting Polymers (TCP) for solar cell applications are reported. This is in support of the Device Research Task of the Flat-Flate Solar Array Project. The workshop took place on January 11 and 12, 1985, in Santa Barbara, California. Participants included university and industry researchers. The discussions focused on the electronic and optical properties of TCP, and on experimental issues and problems that should be addressed for high-efficiency solar cell application.

Kachare, R.↗
NASA NTRS1981

Flat-plate solar array project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The engineering design, fabrication, assembly, operation, economic analysis, and process support research and development for an Experimental Process System Development Unit for producing semiconductor-grade silicon using the slane-to-silicon process are reported. The design activity was completed. About 95% of purchased equipment was received. The draft of the operations manual was about 50% complete and the design of the free-space system continued. The system using silicon power transfer, melting, and shotting on a psuedocontinuous basis was demonstrated.

Source record↗
NASA NTRS1982

Flat-plate solar array project. Task 1: Silicon material. Investigation of the hydrochlorination of SiC14

A two inch diameter stainless steel reactor was designed and built to operate at pressures up to 500 psig for the experimental studies on the hydrochlorination of SiCl4 and metallurgical grade (m.g.) silicon metal to SiHCl3. In order to clearly see the effect of pressure, the experiments were carried out at low reactor pressures of 73 psig and 150 psig, respectively. A large pressure effect on the hydrochlorination reaction was observed between the results of the low pressure experiments and the results of the high pressure experiments. In general, higher pressure produces a higher conversion of SiHCl3, but at a lower reaction rate. The effect of temperature on the reaction rate was studied at 73 psig. Higher reaction temperature gave a higher conversion and a higher reaction rate. Samples of the materials used to construct the hydrochlorination reactor were prepared for corrosion tests.

Mui, J. Y. P.↗
NASA NTRS1982

Summary of flat-plate solar array project documentation. Abstracts of published documents, 1975 to June 1982

Technologies that will enable the private sector to manufacture and widely use photovoltaic systems for the generation of electricity in residential, commercial, industrial, and government applications at a cost per watt that is competitive with other means is investigated. Silicon refinement processes, advanced silicon sheet growth techniques, solar cell development, encapsulation, automated fabrication process technology, advanced module/array design, and module/array test and evaluation techniques are developed.

Source record↗
NASA NTRS1983

Flat-plate solar array project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The process technology for the manufacture of semiconductor-grade silicon in a large commercial plant by 1986, at a price less than $14 per kilogram of silicon based on 1975 dollars is discussed. The engineering design, installation, checkout, and operation of an Experimental Process System Development unit was discussed. Quality control of scaling-up the process and an economic analysis of product and production costs are discussed.

Source record↗
NASA NTRS1984

Flat-plate solar array project process development area, process research of non-CZ silicon material

The program is designed to investigate the fabrication of solar cells on N-type base material by a simultaneous diffusion of N-type and P-type dopants to form an P(+)NN(+) structure. The results of simultaneous diffusion experiments are being compared to cells fabricated using sequential diffusion of dopants into N-base material in the same resistivity range. The process used for the fabrication of the simultaneously diffused P(+)NN(+) cells follows the standard Westinghouse baseline sequence for P-base material except that the two diffusion processes (boron and phosphorus) are replaced by a single diffusion step. All experiments are carried out on N-type dendritic web grown in the Westinghouse pre-pilot facility. The resistivities vary from 0.5 (UC OMEGA)cm to 5 (UC OMEGA)cm. The dopant sources used for both the simultaneous and sequential diffusion experiments are commercial metallorganic solutions with phosphorus or boron components. After these liquids are applied to the web surface, they are baked to form a hard glass which acts as a diffusion source at elevated temperatures. In experiments performed thus far, cells produced in sequential diffusion tests have properties essentially equal to the baseline N(+)PP(+) cells. However, the simultaneous diffusions have produced cells with much lower IV characteristics mainly due to cross-doping of the sources at the diffusion temperature. This cross-doping is due to the high vapor pressure phosphorus (applied as a metallorganic to the back surface) diffusion through the SiO2 mask and then acting as a diffusant source for the front surface.

Campbell, R. B.↗
NASA NTRS1985

Intermediate load modules for test and evaluation: Flat-Plate Solar Array Project

Two versions of a 36 stainless steel solar module were built. The first version was built as a commercial module for marine applications and was purchased for evaluation by JPL. Design deficiencies were identified as a result of the evaluation. The second version was built and the improvements that resulted from design changes are described. Assembly problems, electrical performance, and qualification test results are provided.

Bower, M. J.↗
NASA NTRS1985

Proceedings of the Flat-plate Solar Array Project Research Forum on High-efficiency Crystalline Silicon Solar Cells

The high-efficiency crystalline silicon solar cells research forum addressed high-efficiency concepts, surface-interface effects, bulk effects, modeling and device processing. The topics were arranged into six interactive sessions, which focused on the state-of-the-art of device structures, identification of barriers to achieve high-efficiency cells and potential ways to overcome these barriers.

Kachare, R.↗
NASA NTRS1985

Flat-plate solar array project process development area process research of non-CZ silicon material

Three sets of samples were laser processed and then cell processed. The laser processing was carried out on P-type and N-type web at laser power levels from 0.5 joule/sq cm to 2.5 joule/sq cm. Six different liquid dopants were tested (3 phosphorus dopants, 2 boron dopants, 1 aluminum dopant). The laser processed web strips were fabricated into solar cells immediately after laser processing and after various annealing cycles. Spreading resistance measurements made on a number of these samples indicate that the N(+)P (phosphorus doped) junction is approx. 0.2 micrometers deep and suitable for solar cells. However, the P(+)N (or P(+)P) junction is very shallow ( 0.1 micrometers) with a low surface concentration and resulting high resistance. Due to this effect, the fabricated cells are of low efficiency. The maximum efficiency attained was 9.6% on P-type web after a 700 C anneal. The main reason for the low efficiency was a high series resistance in the cell due to a high resistance back contact.

Source record↗
NASA NTRS1986

Flat-plate solar array project process development area: Process research of non-CZ silicon material

Several different techniques to simultaneously diffuse the front and back junctions in dendritic web silicon were investigated. A successful simultaneous diffusion reduces the cost of the solar cell by reducing the number of processing steps, the amount of capital equipment, and the labor cost. The three techniques studied were: (1) simultaneous diffusion at standard temperatures and times using a tube type diffusion furnace or a belt furnace; (2) diffusion using excimer laser drive-in; and (3) simultaneous diffusion at high temperature and short times using a pulse of high intensity light as the heat source. The use of an excimer laser and high temperature short time diffusion experiment were both more successful than the diffusion at standard temperature and times. The three techniques are described in detail and a cost analysis of the more successful techniques is provided.

Campbell, R. B.↗
NASA NTRS1981

Flat-plate solar-array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The engineering design, fabrication, assembly, operation, economic analysis, and process support R and D for an Experimental Process System Development Unit (EPSDU) are reported. About 95% of purchased equipment is received and will be reshipped to the West Coast location. The Data Collection System is completed. In the area of melting/consolidation, to the system using silicon powder transfer, melting and shotting on a pseudocontinuous basis is demonstrated. It is proposed to continue the very promising fluid bed work.

Source record↗
NASA NTRS1981

The 19th Project Integration Meeting

The Flat-Plate Solar Array Project is described. Project analysis and integration is discussed. Technology research in silicon material, large-area silicon sheet and environmental isolation; cell and module formation; engineering sciences, and module performance and failure analysis. It includes a report on, and copies of visual presentations made at, the 19th Project Integration Meeting held at Pasadena, California, on November 11, 1981.

Mcdonald, R. R.↗
NASA NTRS1983

Proceedings of the 21st Project Integration Meeting

Progress made by the Flat Plate Solar Array Project during the period April 1982 to January 1983 is described. Reports on polysilicon refining, thin film solar cell and module technology development, central station electric utility activities, silicon sheet growth and characteristics, advanced photovoltaic materials, cell and processes research, module technology, environmental isolation, engineering sciences, module performance and failure analysis and project analysis and integration are included.

Source record↗
NASA NTRS1984

Proceedings of the 24th Project Integration Meeting

Progress made by the Flat-Plate Solar Array Project is described. Reports on silicon sheet growth and characterization, silicon material, process development, high-efficiency cells, environmental isolation, engineering sciences, and reliability physics are presented along with copies of visual presentations made at the 24th Project Integration Meeting.

Tustin, D.↗