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Development of a 2K x 2K GaAs QWIP Focal Plane Array

We are developing the next generation of GaAs Quantum Well Infrared Photodetector (QWIP) focal plane arrays (FPAs) in preparation for future NASA space-borne Earth observing missions. It is anticipated that these missions will require both wider ground spatial coverage as well as higher ground imaging resolution. In order to demonstrate our capability in meeting these future goals we have taken a two-tiered approach in the next stage of advanced QWIP focal plane array development. We will describe our progress in the development of a 512 x 3,200 (512 x 3K) array format for this next generation thermal imaging array for the NASA Landsat project. However, there currently is no existing readout integrated circuit (ROIC) for this format array.so to demonstrate the ability to scale-up an existing ROIC we developed a 1,920 x 2,048 (2K x 2K) array and it hybridized to a Raytheon SB419 CTIA readout integrated circuit that was scaled up from their existing 512 x 640 SB339 ROIC. Two versions of the 512 x 3K QWIP array were fabricated to accommodate a future design scale-up of both the Indigo 9803 ROIC based on a 25 micron pixel dimension and a scale up of the Indigo 9705 ROIC based on a 30 micron pixel dimension. Neither readout for the 512 x 3K has yet to be developed but we have fabricated both versions of the array. We describe the design, development and test results of this effort as well as the specific applications these FPAs are intended to address.

Jhabvala, M.

High Sensitivity Long-Wavelength Infrared QWIP Focal Plane Array Based Instrument for Remote Sensing of Icy Satellites

GaAs based Quantum Well Infrared Photodetector (QWIP) technology has shown remarkable success in advancing low cost, highly uniform, high-operability, large format multi-color focal plane arrays. QWIPs afford greater flexibility than the usual extrinsically doped semiconductor IR detectors. The wavelength of the peak response and cutoff can be continuously tailored over a range wide enough to enable light detection at any wavelength range between 6 and 20 micron. The spectral band-width of these detectors can be tuned from narrow (Deltalambda/lambda is approximately 10%) to wide (Deltalambda/lambda is approximately 40%) allowing various applications. Furthermore, QWIPs offer low cost per pixel and highly uniform large format focal plane arrays due to mature GaAs/AlGaAs growth and processing technologies. The other advantages of GaAs/AlGaAs based QWIPS are higher yield, lower l/f noise and radiation hardness (1.5 Mrad). In this presentation, we will discuss our recent demonstrations of 640x512 pixel narrow-band, broad-band, multi-band focal plane arrays, and the current status of the development of 1024x1024 pixel long-wavelength infrared QWIP focal plane arrays.

Gunapala, S.

Curved-Focal-Plane Arrays Using Deformed-Membrane Photodetectors

A versatile and simple approach to the design and fabrication of curved-focal-plane arrays of silicon-based photodetectors is being developed. This approach is an alternative to the one described in "Curved Focal-Plane Arrays Using Back- Illuminated High-Purity Photodetectors" (NPO-30566), NASA Tech Briefs, Vol. 27, No. 10 (October 2003), page 10a. As in the cited prior article, the basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (in this case, an array of photodetectors) conform to a curved focal surface, instead of designing the optics to project an image onto a flat focal surface. There is biological precedent for curved-focal-surface designs: retinas - the image sensors in eyes - conform to the naturally curved focal surfaces of eye lenses. The present approach is applicable to both front-side- and back-side-illuminated, membrane photodetector arrays and is being demonstrated on charge-coupled devices (CCDs). The very-large scale integrated (VLSI) circuitry of such a CCD or other array is fabricated on the front side of a silicon substrate, then the CCD substrate is attached temporarily to a second substrate for mechanical support, then material is removed from the back to obtain the CCD membrane, which typically has a thickness between 10 and 20 m. In the case of a CCD designed to operate in back-surface illumination, delta doping can be performed after thinning to enhance the sensitivity. This approach is independent of the design and method of fabrication of the front-side VLSI circuitry and does not involve any processing of a curved silicon substrate. In this approach, a third substrate would be prepared by polishing one of its surfaces to a required focal-surface curvature. A CCD membrane fabricated as described above would be pressed against, deformed into conformity with, and bonded to, the curved surface. The technique used to press and bond the CCD membrane would depend on the nature of the supporting material (see figure). For example, if the third substrate were made of quartz frit, the substrate would be prepared by suffusing it with epoxy. Then one would take advantage of the porosity of the frit by applying a partial vacuum to the opposite surface of the frit, causing atmospheric pressure to push the CCD membrane against the curved surface. The curing of the epoxy would bond the CCD membrane to the curved surface. Alternatively, if the third substrate were made of a nonporous material, the curved substrate surface would be prepared by coating it with a wax or an uncured epoxy. The CCD membrane would be pressed against the coated, curved surface by use of a suitably pressurized balloon. The CCD membrane would then become bonded to the curved surface by curing of the epoxy or freezing of the wax.

Nikzad, Shouleh

Mercury cadmium telluride short- and medium-wavelength infrared staring focal plane arrays

Short and medium IR wavelength 64 x 64 hybrid focal plane arrays (FPAs) have been developed using sapphire-grown HgCdTe. The short wavelength arrays were developed for a prototype airborne imaging spectrometer, while those of medium wavelength are suitable for tactical missile seekers and strategic surveillance systems. Attention is presently given to results obtained for these FPAs' current-voltage characteristics, as well as for their characterization at different temperatures. The detector arrays were also mated to a multiplexer and characterized under different operating conditions. The unit cell size used is 52 x 52 microns.

Vural, Kadri

Coherent Optical Focal Plane Array Receiver for PPM Signals: Investigation and Applications

The performance of a coherent optical focal plane array receiver for PPM signals under atmospheric turbulence is investigated and applications of this system are addressed. The experimental demonstration of this project has already been explained in previous publications [1]. This article shows a more exhaustive analysis of the expressions needed to obtain the Bit Error Rate (BER) for the real system under study in the laboratory. Selected experimental results of this system are described and compared with theoretical BER expressions, and array combining gains are presented. Receiver sensitivity in terms of photons per bit (PPB) is examined; BER results are shown as a function of signal to noise ratios, (SNR), as well as a function of photons per symbol, and photons per bit.

shot noise limited

HgCdTe infrared focal plane arrays for imaging spectrometer applications

It is pointed out that the development of two-dimensional infrared focal plane arrays (FPAs) offers new alternatives in imaging and remote sensing. Attention is given to an imaging spectrometer which represents a new concept exploiting two-dimensional arrays. This instrument is to be used for the remote sensing of the earth on the basis of a utilization of reflected sunlight in both the visible (VIS) and short wavelength infrared (SWIR). The imaging spectrometer concept is to make it possible to obtain contiguous spectral coverage at high resolution without having to use increasingly complex scanners. The concept utilizes a prism spectrometer to disperse the image of the slit across the area arrays in the focal plane. The focal plane consists of silicon CCDs for the VIS and near infrared portions of the spectrum and HgCdTe hybrid arrays for the SWIR.

Rode, J. P.

Mid-Wave and Long-Wave Infrared Dualband Megapixel QWIP Focal Plane Array

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based quantum well infrared photodetector (QWIP) focal planes and a 320x256 pixel dual-band pixel co-registered simultaneous QWIP focal plane array have been demonstrated as pathfinders. In this paper, we discuss the development of 1024x1024 MWIR/LWIR dual-band pixel co-registered simultaneous QWIP focal plane array.

Gunapala, S. D.

T2SL meta-surfaced digital focal plane arrays for earth remote sensing applications

Long-wavelength infrared (LWIR) focal plane arrays (FPAs) needed for Earth Science imaging, spectral imaging, and sounding applications have always been among the most challenging in infrared photodetector technology due to the rigorous material growth, device design and fabrication demands. Future small satellite missions will present even more challenges for LWIR FPAs, as operating temperature must be increased so that cooler (and radiator) volume, mass, and power can be reduced.

Hill, Cory

Multi-Color Megapixel QWIP focal plane arrays for remote sensing

In this paper, we will discuss the performance in terms of quantum efficiency, NEAT, uniformity, operability, and modulation transfer functions of the 1024x1024 pixel arrays and the progress of dualband QWIP focal plane array development work.

infixed imaging

Short wavelength 128 by 128 focal plane arrays for remote sensing applications

Short-wavelength (1-2.5-micron) 128x128 focal plane arrays have been fabricated and demonstrated with high pixel yields and dark-current-limited performance. The detector material is HgCdTe grown by LPE on a sapphire substrate which yields high-performance uniform detectors. The detector arrays were characterized at temperatures of 80-150 K; the peak quantum efficiency at 2.4 microns is 80 percent. The multiplexer is a Reticon FET switch with output amplifiers. It is noted that the long-term goal of this project is to develop a 150x1000 mosaicked focal plane for use in the HIRIS instrument on the Earth Observing System.

Bothwell, Mary

320 x 256 Complementary Barrier Infrared Detector Focal Plane Array for Long-Wave Infrared Imaging

A 320 x 256 Complementary Barrier Infrared (CBIRD) focal plane array for long-wavelength infrared (LWIR) imaging is reported. The arrays were grown by molecular beam expitaxy (MBE) with a 300 period 1.9 um thick absorber. The mean dark current density of 2.2 x 10-4 A/cm2 was measured at an operating bias of 128 mV with a long wavelength cutoff of 8.8 ?m observed at 50% of the peak. The maximum quantum efficiency was 54% measured at 5.6 ?m. Operating at T = 80K, the array yielded an 81% fill factor with 97% operability. Good imagery with a mean noise equivalent different temperature (NE?T) of 18.6 mK and a mean detectivity of D* = 1.3 x 1011 cm-Hz1/2/W was achieved. The substrate was thinned using mechanical lapping and neither an AR coating nor a passivation layer was applied. This article provides the details of the fabrication process for achieving low-dark current LWIR CBIRD arrays. Discussion for an effective hard mask for excellent pattern transfer is given and appropriate mounting techniques for good thermal contact during the dry etching process is described. The challenges and differences between etching large 200 ?m test diodes and small 28 ?m FPA pixels are given.

Focal Plane Arrays (FPA)

Design of the focal plane array assembly for the Mars Observer/Visual and Infrared Mapping Spectrometer (MO/VIMS)

A unique focal plane array (FPA) assembly combining both electronic and optical components in a single hermetically sealed hybrid package has been designed to meet the performance requirements imposed on the focal plane assembly in the Visual and Infrared Mapping Spectrometer (VIMS) for the Mars Observer (MO) mission. Inside the FPA package is a configuration of three multiplexed linear arrays containing 320 detector elements, a combination of Si and InSb, allowing continuous spectral coverage from 0.35 to 5.14 microns. An optical subassembly consisting of two spectral order-sorting filters with intrinsic field-of-view apertures requiring critical optical alignment is also internal to the hybrid. Several engineering issues arose during the MO/VIMS FPA development phase which had challenging design ramifications. FPA performance requirements, design approach, and critical issues are discussed.

Niblack, Curtiss A.

High performance GaSb/InAs superlattice long-wave infrared focal plane array

We describe the demonstration of a ¼ VGA format long-wavelength infrared focal plane array based on an InAs/GaSb superlattice absorber surrounded by an electron-blocking and a hole-blocking unipolar barrier. An 8.8 μm cutoff focal plane without antireflection coating based on this complementary barrier infrared detector design has yielded noise equivalent differential temperature of 18.6 mK at operating temperature of 80K, with 300 K background and f/2 cold-stop.

Mumolo, J. M.

Large Format Multicolor QWIP Focal Plane Arrays

Mid-wave infrared (MWIR) and long-wave infrared (LWIR) multicolor focal plane array (FPA) cameras are essential for many DoD and NASA applications including Earth and planetary remote sensing. In this paper we summarize our recent development of large format multicolor QWIP FPA that cover MWIR and LWIR bands.

infrared detectors

640 X 512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays

A 640 512 pixel, long-wavelength cutoff, narrowband(delta lambda/lambda ~ 10%) quantum-well infrared photodetector(QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4??m spectral region, and a broadband (delta lambda/lambda ~ 42%)QWIP FPA having a 15.4 m cutoff have been demonstrated. In this paper, we discuss the electrical and optical characterization of these FPAs, and their performance. In addition, we discuss the development of a very sensitive (NEDT ~ 10.6 mK) 640 X 512 pixel thermal imaging camera having a 9 lambda m cutoff.

broadband