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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Effect of aerodynamic and angle-of-attack uncertainties on the May 1979 entry flight control system of the Space Shuttle from Mach 8 to 1.5

A six degree of freedom simulation analysis was performed for the space shuttle orbiter during entry from Mach 8 to Mach 1.5 with realistic off nominal conditions by using the flight control systems defined by the shuttle contractor. The off nominal conditions included aerodynamic uncertainties in extrapolating from wind tunnel derived characteristics to full scale flight characteristics, uncertainties in the estimates of the reaction control system interaction with the orbiter aerodynamics, an error in deriving the angle of attack from onboard instrumentation, the failure of two of the four reaction control system thrusters on each side, and a lateral center of gravity offset coupled with vehicle and flow asymmetries. With combinations of these off nominal conditions, the flight control system performed satisfactorily. At low hypersonic speeds, a few cases exhibited unacceptable performances when errors in deriving the angle of attack from the onboard instrumentation were modeled. The orbiter was unable to maintain lateral trim for some cases between Mach 5 and Mach 2 and exhibited limit cycle tendencies or residual roll oscillations between Mach 3 and Mach 1. Piloting techniques and changes in some gains and switching times in the flight control system are suggested to help alleviate these problems.

Stone, H. W.↗

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗

Site diversity for satellite earth terminals and measurements at 28 GHz

This paper reviews site diversity concepts and models and presents the results of a site diversity experiment, in which radiometers were used to measure attenuation on earth-space paths, performed at Columbus, Ohio, for a period of one year. Attenuation statistics are presented first in the form of the joint probability density function of attenuation at the two sites. From these are derived the cumulative two-dimensional distribution of attenuation at both sites, the cumulative distribution of attenuation at each site, the effective cumulative distribution of attenuation for a diversity system that always switches to the better of two signals, and the effective cumulative distribution of attenuation for a system with maximal-ratio signal combining. The switched-system diversity gain is compared with Hodge's predictive model, and the diversity improvement is compared with Boithias' model. Fade-duration and interfade-interval statistics are also presented for each site and for systems that employ switching and maximal-ratio combining. Rain-rate and interrainfall interval statistics are also included.

Lin, Kuan-Ting↗

Circuit Stops Prelasing In A Q-Switched Laser

Protective shutdown circuit stops prelasing in Q-switched laser operating at pulse-repetition rate of about 10 Hz. During normal operation, Q-switch prevents emission of light from laser cavity during application of Q-switch-trigger pulse. When circuit detects prelasing, it triggers relay turning off laser power supply. Circuit integrated into almost any Q-switched-laser system, provided one gains access to laser light, Q-switch-trigger pulse, and safety-interlock line of laser power supply.

Lockard, George E.↗

Light-detection electronics for a Raman lidar

A light-detection system for an optical radar, or lidar, unit to be used for remote temperature and composition measurements was designed, built, and bench tested. This detection system processes three return signal wavelengths: two Raman wavelengths, and the Rayleigh-Mie wavelength at 694.3 nanometers. Means of coping with photomultiplier tube instabilities and limitations are discussed. Circuits for gain control, ranging, and digitizing are included. The phototube gains can be switched fully on in 80 meters (450 nsec) or off in 30 meters (200 nsec) of range. The range circuit processes signals from 0.1 to 2 kilometers, with an estimated range resolution of less than 5 meters.

Leser, R. J.↗

Comparison of Nd 1.06 and 1.33 micron operation in various hosts

Performances of Nd in various hosts including Nd:YAG, Nd:YLF, Nd:BEL, and Nd:Cr:GSGG were characterized and compared for operation on the nominal 1.06 micron and 1.33 micron transitions. Comparison included continuous mode operation, normal mode operation, Q-switched operation, and gain measurements. Continuous lasing of Nd:Cr:GSGG under lamp pumping is reported for what may be the first time. Characterization included operation with different mirror reflectivities to obtain the internal losses, measurement of the upper laser level lifetime, measurement of the beam quality of the lasers operating under nominally similar circumstances, and measurement of the wavelength. These measurements should provide a comparison of the various Nd hosts under similar circumstances for a wide variety of operational modes and at both wavelengths of interest.

Barnes, Norman P.↗

The NASA Spacecraft Transponding Modem

A new deep space transponder is being developed by the Jet Propulsion Laboratory for NASA. The Spacecraft Transponding Modem (STM) implements the standard transponder functions and the channel service functions that have previously resided in spacecraft Command/Data Subsystems. The STM uses custom ASICs, MMICs, and MCMs to reduce the active device parts count to 70, mass to I kg, and volume to 524 cc. The first STMs will be flown on missions launching in the 2003 time frame. The STM tracks an X-band uplink signal and provides both X-band and Ka-band downlinks, either coherent or non-coherent with the uplink. A NASA standard Command Detector Unit is integrated into the STM, along with a codeblock processor and a hardware command decoder. The decoded command codeblocks are output to the spacecraft command/data subsystem. Virtual Channel 0 (VC-0) (hardware) commands are processed and output as critical controller (CRC) commands. Downlink telemetry is received from the spacecraft data subsystem as telemetry frames. The STM provides the following downlink coding options: the standard CCSDS (7-1/2) convolutional coding, ReedSolomon coding with interleave depths one and five, (15-1/6) convolutional coding, and Turbo coding with rates 1/3 and 1/6. The downlink symbol rates can be linearly ramped to match the G/T curve of the receiving station, providing up to a 1 dB increase in data return. Data rates range from 5 bits per second (bps) to 24 Mbps, with three modulation modes provided: modulated subcarrier (3 different frequencies provided), biphase-L modulated direct on carrier, and Offset QPSK. Also, the capability to generate one of four non-harmonically related telemetry beacon tones is provided, to allow for a simple spacecraft status monitoring scheme for cruise phases of missions. Three ranging modes are provided: standard turn around ranging, regenerative pseudo-noise (PN) ranging, and Differential One-way Ranging (DOR) tones. The regenerative ranging provides the capability of increasing the ground received ranging SNR by up to 30 dB. Two different avionics interfaces to the command/data subsystem's data bus are provided: a MIL STD 1553B bus or an industry standard PCI interface. Digital interfaces provide the capability to control antenna selection (e.g., switching between high gain and low gain antennas) and antenna pointing (for future steered Ka-band antennas).

Berner, Jeff B.↗

Low-cost, lightweight RF transfer switch

Low cost miniature DPDT "half-size-crystal-can" relay serves as RF transfer switch for 1.0-W S-band signals. Switch can be used in miniature communication equipment operations at vhf-to-microwave frequencies. Device presents principal gains over conventional RF switches on space saving, and weight and cost reduction.

Olsson, D. L.↗

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗

Preliminary results of a quantitative comparison of the spectral signatures of Landsat Thematic Mapper (TM) and Modular Optoelectronic Multispectral Scanner (MOMS).

Operationally acquired Thematic Mapper and experimental MOMS-01 data are evaluated quantitatively concerning the systems spectral response and performance for geoscientific applications. Results show the two instruments to be similar in the spectral bands compared. Although the MOMS scanner has a smaller IFOV, it has a lower modulation transfer function performance for small, low contrast features as compared to Thematic Mapper. This deficiency does not only occur when MOMS was switched to the low gain mode. It is due to the CD arrays used (ITEK CCPD 1728).

Bodechtel, J.↗

Switching State-Feedback LPV Control with Uncertain Scheduling Parameters

This paper presents a new method to design Robust Switching State-Feedback Gain-Scheduling (RSSFGS) controllers for Linear Parameter Varying (LPV) systems with uncertain scheduling parameters. The domain of scheduling parameters are divided into several overlapped subregions to undergo hysteresis switching among a family of simultaneously designed LPV controllers over the corresponding subregion with the guaranteed H-infinity performance. The synthesis conditions are given in terms of Parameterized Linear Matrix Inequalities that guarantee both stability and performance at each subregion and associated switching surfaces. The switching stability is ensured by descent parameter-dependent Lyapunov function on switching surfaces. By solving the optimization problem, RSSFGS controller can be obtained for each subregion. A numerical example is given to illustrate the effectiveness of the proposed approach over the non-switching controllers.

Switching LPV control↗

Gain and energy storage in holmium YLF

It is demonstrated that Q-switched holmium lasers are capable of high-gain and high-energy operation at 300 K. Small-signal gain coefficients of 0.50 and 0.12/cm have been measured in YLF and YAG, respectively. Small-signal gains of 0.50/cm are comparable to those achievable in Nd:YAG and are not typical of low-gain materials. This large gain in the Ho:YLF material is made possible by operating the amplifier in the ground state depletion mode. The amplifier performance data and associated analysis presented demonstrate that efficient energy storage is possible with very high excited state ion densities of the Ho 5I7 upper laser level. This is an important result since upconversion can limit the 5I7 population. Although upconversion was still present in this experiment, it was possible to achieve efficient energy storage, demonstrating that the problem is manageable even at high excitation densities in YLF.

Storm, Mark E.↗

Development and fabrication of an augmented power transistor

The development of device design and processing techniques for the fabrication of an augmented power transistor capable of fast switching and high voltage power conversion is discussed. The major device goals sustaining voltages in the range of 800 to 1000 V at 80 A and 50 A, respectively, at a gain of 14. The transistor switching rise and fall times were both to have been less than 0.5 microseconds. The development of a passivating glass technique to shield the device high voltage junction from moisture and ionic contaminants is discussed as well as the development of an isolated package that separates the thermal and electrical interfaces. A new method was found to alloy the transistors to the molybdenum disc at a relatively low temperature. The measured electrical performance compares well with the predicted optimum design specified in the original proposed design. A 40 mm diameter transistor was fabricated with seven times the emitter area of the earlier 23 mm diameter device.

Geisler, M. J.↗

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗

The NASA satellite communication 20 x 20 matrix switches

The characteristics of two matrix switches designed for high capacity satellite communications systems are described. The switches provide routing between 20 input and 20 output ports at an IF frequency during TDMA operations. Switching speeds of 10 nsec are projected for dual gate GaAs FETs. The two designs differed in the coupling configurations, bandwidth (2.69-1.2 GHz), off-state isolation (-54 to -40 dB), switching speeds (16-37 nsec), and gain ripple (5.3-2.2 dB). Both designs achieved a 2 nsec reconfiguration rate. Further development is required to reduce the ripple effects and attain the potential 2 nsec switching speed offered by the GaAs FETs.

Saunders, A. L.↗

New secondary batteries utilizing electronically conductive polymer cathodes

The objectives are to optimize the transport rates in electronically conductive polypyrrole films by controlling the morphology of the film and to assess the utility of these films as cathodes in a lithium/polypyrrole secondary battery. During this research period, a better understanding was gained of the fundamental electrochemical switching processes within the polypyrrole film. Three publications were submitted based on the work completed.

Martin, Charles R.↗