Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition
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Chen Chen↗
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Controlling surface adatom kinetics for improved structural and optical properties of high indium content aluminum indium nitride
A non-traditional, for AlInN, method of controlling adatom kinetics and a low temperature growth condition were employed to improve the quality of high indium content aluminum indium nitride films. Metal-rich surfaces were used to enhance adatom mobility and compensate for the low growth temperature (Tsub ≤ 400 °C) effect of reducing surface diffusion lengths. The metal-rich approach resulted in 12 times lower x-ray diffraction full-width at half-maximum rocking curve figures of merit when compared to literature. In addition to promising photoluminescence emission, these results indicate improved structural quality over other reported approaches. AlInN films with ∼70% indium content were characterized via x-ray diffraction, atomic force microscopy, and photoluminescence spectroscopy with each technique indicating an optimal growth temperature of 350 °C. Al0.3In0.7N grown above 400 °C exhibited phase separation and a reduction in quality, while samples grown colder were predominantly single-phase and displayed improved photoluminescence at ∼1.45 eV. The photoluminescence spectra suggest emission from quantum wire-like structures with dimensions ranging from 15 to 18 nm. These low-temperature, metal-rich findings for high indium content AlInN are promising for future long-wavelength III-nitride optical devices.
Engel, Zachary (ORCID:0000000205021981)↗
Mid-Infrared Photoluminescence from Tellurium Thin Films
Tellurium is an elemental semiconductor with a 0.34 eV optical band gap, showing promise for mid-infrared (MIR) optoelectronics including light-emitting diodes. However, quantitative measurement of the tellurium luminescence efficiency has not yet been investigated, and growing optically active films remain challenging. Here, we demonstrate the low-temperature growth of bright tellurium thin films by using physical vapor transport. The sample morphology is controlled by varying the growth temperature, yielding continuous thin films, microparticles, or nanowires. Additionally, we demonstrated patterned growth by using a seed layer for selective nucleation. Quantitative photoluminescence measurements at room temperature reveal an internal quantum yield of 2.0% at 0.34 eV for the as-grown tellurium films, comparable to the best-reported efficiencies of III-V and II-VI compound semiconductors with similar band gaps. Furthermore, we demonstrate band-gap tunability with Te-Se alloys, where up to 20% selenium incorporation gradually blue-shifts the band gap to 0.55 eV. The work demonstrates the potential use of tellurium for efficient MIR devices.
Wang, Shu↗
Material growth and characterization for solid state devices
During this period InGaAs and InGaAsP were grown on (100)InP by liquid phase electroepitaxy (LPEE). Results of the epitaxial growth of InGaAs on sputtered quartz masked substrates are presented. The resulting surface morphology can be related to the current density distribution near the edges of a masked pattern. The quaternary InGaAs was grown with compositions corresponding to 1.3 micron and 1.5 micron emission wavelengths. Growth rates were found to be linearly dependent upon current density, and a strong dependence upon composition was noted. These compositions lie in the miscibility gap region of the alloy phase diagram at the 645 C growth temperature. Growths were performed at 685 C to avoid the miscibility gap. Epilayers were characterized by photoluminescence, X-ray diffraction, secondary ion mass spectrometry, and Hall effect measurements. Aluminum oxide was deposited on silicon and InGaAs substrates for the characterization of this material as an insulator in a field effect transistor structure. It was determined that the results did not warrant further work with the deposition from an aluminum isopropoxide source. A metallographic vapor phase epitaxy system installation is nearing completion for use in hybrid III-V semiconductor epilayer growths.
Collis, Ward J.↗
Elevated temperature crack growth
The objective of the Elevated Temperature Crack Growth Project is to evaluate proposed nonlinear fracture mechanics methods for application to combustor liners of aircraft gas turbine engines. During the first year of this program, proposed path-independent (P-I) integrals were reviewed for such applications. Several P-I integrals were implemented into a finite-element postprocessor which was developed and verified as part of the work. Alloy 718 was selected as the analog material for use in the forthcoming experimental work. A buttonhead, single-edge notch specimen was designed and verified for use in elevated-temperature strain control testing with significant inelastic strains. A crack mouth opening displacement measurement device was developed for further use.
Yau, J. F.↗
Elevated temperature crack growth
The objective of the Elevated Temperature Crack Growth Program is to evaluate proposed nonlinear fracture mechanics methods for application to hot section components of aircraft gas turbine engines. Progress during the past year included linear-elastic fracture mechanics data reduction on nonlinear crack growth rate data on Alloy 718. The bulk of the analytical work centered on thermal gradient problems and proposed fracture mechanics parameters. Good correlation of thermal gradient experimental displacement data and finite element prediction was obtained.
Malik, S. N.↗
Temperature-dependent growth of hexagonal and monoclinic gallium sulfide films by pulsed-laser deposition
We demonstrate the selective, pulsed-laser deposition of hexagonal GaS and monoclinic Ga2S3 films on sapphire substrates from a single Ga 2 S 3 target in high-vacuum conditions. Growth at substrate temperatures below 550 °C causes GaS film formation, which indicates non-stoichiometric transfer from the target to the film. Surprisingly, stoichiometric transfer occurs at substrate temperatures above 650 °C with monoclinic Ga 2 S 3 as the preferred, higher S-content phase. Through a series of growth and annealing experiments, we show that GaS nucleation under S-deficient conditions leads to the preferred growth of this layered, hexagonal phase below 550 °C. Furthermore, GaS films annealed above 650 °C under high vacuum are transformed to Ga 2 S 3 , reflecting the greater stability of the monoclinic phase. By first growing Ga 2 S 3 at a higher temperature and subsequently growing GaS at a lower temperature, we can fabricate GaS/Ga 2 S 3 heterostructures in a single growth process.
36 MATERIALS SCIENCE↗
Low temperature CVD growth of WSe 2 enabled by moisture-assisted defects in the precursor powder
Two-dimensional transition metal dichalcogenides (TMDs) have been proposed for a wide variety of applications, such as neuromorphic computing, flexible field effect transistors, photonics, and solar cells, among others. However, for most of these applications to be feasible, it is necessary to integrate these materials with the current existing silicon technology. Although chemical vapor deposition is a promising method for the growth of high-quality and large-area TMD crystals, the high temperatures necessary for the growth make this technique incompatible with the processes used in the semiconductor industry. Herein, we demonstrate the possibility of low-temperature growth of TMDs, using tungsten selenide (WSe 2 ) as a model, by simply using moisture-assisted defective tungsten oxide (WO 3 ) precursor powders during the growth of these materials. Density functional theory calculations reveal the mechanism by which moisture promotes the defect formation on the precursor crystal structure and how it dictates the reduction of the temperature of the growth. The results were compared with the standard growth at high temperatures and with a precursor mixture with alkali salts to show the high quality of the WSe 2 grown at temperatures as low as 550 °C. To conclude, the work improves the understanding of nucleation and growth mechanisms of WSe 2 at low temperatures and provides a useful strategy for the growth of TMDs at temperatures required for the back-end-of-line compatibility with current silicon technology.
2D materials↗
Magnetic transition behavior in epitaxial Fe 47 Rh 47 Pd 6 films
The properties of Fe–Rh–Pd epitaxial thin films grown on MgO(001) were studied as a function of growth temperature. Films grown above 400°C exhibit a first-order antiferromagnetic to ferromagnetic magnetic phase transition with a transition temperature that decreases as the growth temperature is increased. The chemical order parameter computed from the ratio of intensities of the (001) and (002) diffraction peaks is nearly independent of the growth temperature, while the lattice constants change slightly. A comparison of our structural, magnetic, and electrical transport results with first-principle-based calculations as well as literature results indicates that the transition temperature of Fe–Rh-based alloy films depends sensitively on the lattice parameters and is of electronic origin. The transition temperature and its width can be tuned over a wide range by controlling the crystal structure via growth conditions or postdeposition annealing.
36 MATERIALS SCIENCE↗
Temperature Affects Fatty Acids In Methylococcus Capsulatus
According to report, temperature of growth of thermotolerant, methane-oxidizing bacterium Methylococcus capsulatus (Bath) affects both proportion of monounsaturated fatty acids and cis/trans ratio of these acids in cell membrane. Because suboptimum growth temperature is potential stress factor, it may be possible to use such cis/trans ratios as indices of stresses upon methane-oxidizing microbial communities. Research in microbiology of methanotrophs increasing because of possible commercial exploitation of these organisms as biocatalysts or as sources of useful polymers; knowledge of effect of temperature on ability of methanotrophs to utilize methane useful in optimization of conditions of growth.
Jahnke, Linda L.↗
Ellipsometric study of cubic SiC
Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.
Alterovitz, Samuel A.↗
Acclimation of leaf respiration consistent with optimal photosynthetic capacity
Abstract Plant respiration is an important contributor to the proposed positive global carbon‐cycle feedback to climate change. However, as a major component, leaf mitochondrial (‘dark’) respiration ( R d ) differs among species adapted to contrasting environments and is known to acclimate to sustained changes in temperature. No accepted theory explains these phenomena or predicts its magnitude. Here we propose that the acclimation of R d follows an optimal behaviour related to the need to maintain long‐term average photosynthetic capacity ( V cmax ) so that available environmental resources can be most efficiently used for photosynthesis. To test this hypothesis, we extend photosynthetic co‐ordination theory to predict the acclimation of R d to growth temperature via a link to V cmax , and compare predictions to a global set of measurements from 112 sites spanning all terrestrial biomes. This extended co‐ordination theory predicts that field‐measured R d and V cmax accessed at growth temperature ( R d,tg and V cmax,tg ) should increase by 3.7% and 5.5% per degree increase in growth temperature. These acclimated responses to growth temperature are less steep than the corresponding instantaneous responses, which increase 8.1% and 9.9% per degree of measurement temperature for R d and V cmax respectively. Data‐fitted responses proof indistinguishable from the values predicted by our theory, and smaller than the instantaneous responses. Theory and data are also shown to agree that the basal rates of both R d and V cmax assessed at 25°C ( R d,25 and V cmax,25 ) decline by ~4.4% per degree increase in growth temperature. These results provide a parsimonious general theory for R d acclimation to temperature that is simpler—and potentially more reliable—than the plant functional type‐based leaf respiration schemes currently employed in most ecosystem and land‐surface models.
Wang, Han↗
Harnessing Chemical Short‐Range Disorder to Improve Lithium Retention in Epitaxial LLTO Solid‐Electrolyte Thin Films
Lithium lanthanum titanate Li 3x La 2/3-x TiO 3 (LLTO) is a promising perovskite-based solid-state electrolyte for next-generation lithium-ion batteries, but controlling crystallinity and Li stoichiometry in thin-film form is challenging because high growth temperatures are required to achieve good crystallinity while Li remains strongly volatile. Here, we systematically investigate the effect of substrate temperature on epitaxial LLTO thin films grown by pulsed laser deposition. We identify a narrow growth window (750–800°C) in which LLTO films grow as c-axis oriented with atomically flat surfaces. Lower growth temperatures (<750°C) stabilize laterally extended, chemically disordered stripe domains that coexist with ordered LLTO regions, whereas higher temperatures (≥825°C) suppress these defects but promote island morphologies and Al/Ti interdiffusion. While spectroscopy measurements show that Ti remains in the 4+ oxidation state and Li is globally deficient for all films, our depth-resolved time-of-flight secondary ion mass spectrometry studies reveal that the 700°C film retains the highest Li content across its thickness. These results clarify how growth temperature controls crystallinity, chemical short-range disorder, and Li retention, and highlight moderate growth temperatures (∼700°C) as a route to mitigate Li loss in epitaxial solid-electrolyte films.
chemical short-range disorder↗
Hexagonal boron nitride: Epitaxial growth and device applications
As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.
42 ENGINEERING↗
Room temperature crack growth rates and -20 deg F fracture toughness of welded 1 1/4 inch A-285 steel plate
Data are presented which were developed in support of a structural assessment of NASA-LEWIS' 10-foot by 10-foot supersonic wind tunnel, critical portions of which are fabricated from rolled and welded 1 1/4 inch thick A-285 steel plate. Test material was flame cut from the tunnel wall and included longitudinal and circumferential weld joints. Parent metal, welds, and weld heat affected zone were tested. Tensile strength and fracture toughness were determined at -20 F, the estimated lowest tunnel operating temperature. Crack growth rates were measured at room temperature, where growth rates in service are expected to be highest.
Shannon, J. L., Jr.↗
Elevated temperature crack growth
Alloy 718 crack growth experiments were conducted to assess the ability of the selected path-independent (P-I) integrals to describe the elevated temperature crack growth behavior. These tests were performed on single edge notch (SEN) specimens under displacement control with multiple extensometers to monitor the specimen and crack mouth opening displacement (CMOD). The displacements in these tests were sufficiently high to induce bulk cyclic inelastic deformation of the specimen. Under these conditions, the linear elastic fracture mechanics (LEFM) parameter K does not correlate the crack growth data. The experimentally measured displacement gradients at the end of specimen gage length were used as the boundary conditions in elastic-plastic finite element method (FEM) analyses. These analyses were performed with a node release approach using CYANIDE, a GEAE FEM code, which included a gap element which is capable of efficiently simulating crack closure. Excellent correlation was obtained between the experimentally measured and predicted variation of stress and CMOD with crack length and the stress-CMOD loops for Alloy 718 tests conducted at 538 C. This confirmed the accuracy of the FEM crack growth simulation approach. The experimentally measured crack growth rate data correlated well the selected P-I integrals. These investigations have produced significant progress in developing P-I integrals as non-linear fracture mechanics parameters. The results suggest that this methodology has the potential of accurately describing elevated temperature crack growth behavior under the combined influence of thermal cycling and bulk elastic-inelastic deformation states.
Kim, K. S.↗
Elevated temperature crack growth in aluminum alloys: Tensile deformation of 2618 and FVS0812 aluminum alloys
Understanding the damage tolerance of aluminum alloys at elevated temperatures is essential for safe applications of advanced materials. The objective of this project is to investigate the time dependent subcritical cracking behavior of powder metallurgy FVS0812 and ingot metallurgy 2618 aluminum alloys at elevated temperatures. The fracture mechanics approach was applied. Sidegrooved compact tension specimens were tested at 175, 250, and 316 C under constant load. Subcritical crack growth occurred in each alloy at applied stress intensity levels (K) of between about 14 and 25 MPa/m, well below K (sub IC). Measured load, crack opening displacement and displacement rate, and crack length and growth rate (da/dt) were analyzed with several continuum fracture parameters including, the C-integral, C (sub t), and K. Elevated temperature growth rate data suggest that K is a controlling parameter during time dependent cracking. For FVS0812, da/dt is highest at 175 C when rates are expressed as a function of K. While crack growth rate is not controlled by C (sub t) at 175 C, da/dt appears to better correlate with C (sub t) at higher temperatures. Creep brittle cracking at intermediate temperatures, and perhaps related to strain aging, is augmented by time dependent transient creep plasticity at higher temperatures. The C (sub t) analysis is, however, complicated by the necessity to measure small differences in the elastic crack growth and creep contributions to the crack opening displacement rate. A microstructural study indicates that 2618 and FVS0812 are likely to be creep brittle materials, consistent with the results obtained from the fracture mechanics study. Time dependent crack growth of 2618 at 175 C is characterized by mixed transgranular and intergranular fracture. Delamination along the ribbon powder particle boundaries occurs in FVS0812 at all temperatures. The fracture mode of FVS0812 changes with temperature. At 175 C, it is characterized as dimpled rupture, and at 316 C as mixed matrix superplastic rupture and matrix-dipersoid debonding.
Leng, Yang↗
Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon
An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.
Molecular beam epitaxy↗