Pressure-induced cation and vacancy disorder-order transition and near-zero τ f in deficient hexagonal perovskite Ba 8 ZnTa 6 O 24 dielectrics
Pressure applications can enable the tuning of atomic/defect ordering and provide access to new functional materials. Here, in this study, we report that pressure-induced structural transformation featuring disorder-order transition of both cations and vacancies in the 8-layer deficient hexagonal perovskite tantalate dielectrics Ba 8 ZnTa 6 O 24 , which transformed the structure from twin to shift and remarkably lowered the temperature coefficient of resonant frequency τ f down to near zero (∼0.56 ppm/°C) from 38 ppm/°C for the twinned precursor. The atomic scale STEM-HAADF and EDS results confirm the ordering of Zn in the Ta host at the nanometer scale in the shifted material featuring well-ordered Ba 8 ZnTa 6 O 24 slabs intergrown with Ba 3 ZnTa 2 O 9 and Ba 5 Ta 4 O 15 monolayers and anti-phase grain boundaries as planar defects. The pressure-induced twin-shift structural transformation of Ba 8 ZnTa 6 O 24 features the rare constant concentration of the hexagonal stacked layers, which is allowed by the vacancy ordering at the central layers of face-shared octahedral (FSO) trimers avoiding the FSO B-B repulsion, and remarkably the faster cationic ordering kinetics compared with the 2:1 ordered complex perovskites. Although the inclusion of numerous planar defects and the oxidizable atomic defects led to significant p-type conduction and inhomogeneous electrical microstructures, resulting in an extraordinarily high extrinsic dielectric loss for the high-pressure shifted Ba 8 ZnTa 6 O 24 pellet, the intrinsically near-zero τ f could make the shifted Ba 8 ZnTa 6 O 24 perovskite an ideal microwave dielectric resonator candidate if the defects could be eliminated.