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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗
NASA NTRS1989

Low-Inductance Capacitor For Low Temperatures

Planar capacitor made on epoxy/fiberglass printed-circuit board. Planar design and flat copper plates ensure low inductance and low series resistance. Planar construction minimized effects of thermal contraction, and epoxy/fiberglass substrate ensured high breakdown voltage. Design is simple, and this type of capacitor easy for any printed-circuit-board facility to fabricate. Design suitable for any small-capacitance, high-voltage capacitor, whether operating at low or high temperature.

Rhodes, David B.↗
NASA NTRSDate not supplied

Characterizing Electrical Arc Behavior in Ion Engines

Gridded ion engines represent a class of electric thrusters characterized by high propulsive efficiency and high total impulse capabilities. These engines operate by applying high voltage to multi-aperture electrodes, thereby electrostatically accelerating plasma to generate thrust. Within the course of normal operations, periodic occurrences of high voltage breakdowns manifest within the thruster. These breakdowns constitute an inherent aspect of operation, with observations indicating a diminishing frequency and total count over the thruster's operational lifespan. To safeguard the propulsion system during such occurrences, the power processing unit (PPU) employs an automated arc extinction sequence, termed "recycle," which is triggered upon detection of an over-current condition. The initial phase of this sequence involves momentarily deactivating the high voltage and reducing the discharge current to a predetermined level, minimizing plasma impingement as the ion beam is defocused. The high voltage is subsequently reapplied, and the discharge current is returned to its nominal value. The entire sequence typically spans approximately 800 milliseconds. Throughout a recycle event, the propulsion system experiences various current and voltage transients as the arc current traverses the system and different power supplies are toggled on and off.

electric propulsion↗
NASA NTRS1987

Gigarad-tolerant power switches and memory elements

A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.

Joyner, W. T.↗
NASA NTRS2007

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Evans, Laura J.↗
NASA NTRS2008

High Temperature Electronics for Intelligent Harsh Environment Sensors

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Evans, Laura J.↗
NASA NTRS1974

High-voltage distributors

Two distributors reduce high-voltage breakdowns and corona discharges. Both distributors are constructed to prevent air traps and facilitate servicing without soldering. Occurrence of coronas is also minimized due to smooth surfaces of device.

Mcchesney, J. F., Jr.↗
NASA NTRS1984

Hollow cathode apparatus

A hollow cathode apparatus is described, which can be rapidly and reliably started. An ignitor positioned upstream from the hollow cathode, generates a puff of plasma that flows with the primary gas to be ionized through the cathode. The plasma puff creates a high voltage breakdown between the downstream end of the cathode and a keeper electrode, to heat the cathode to an electron-emitting temperature.

Aston, G.↗
NASA NTRS1986

Investigation of a repetitive pulsed electrothermal thruster

A pulsed electrothermal (PET) thruster with 1000:1 ratio nozzle is tested in a repetitive mode on water propellant. The thruster is driven by a 60J pulse forming network at repetition rates up to 10 Hz (600W). The pulse forming network has a .31 ohm impedance, well matched to the capillary discharge resistance of .40 ohm, and is directly coupled to the thruster electrodes without a switch. The discharge is initiated by high voltage breakdown, typically at 2500V, through the water vapor in the interelectrode gap. Water is injected as a jet through a .37 mm orifice on the thruster axis. Thruster voltage, current and impulse bit are recorded for several seconds at various power supply currents. Thruster to power ratio is typically T/P = .07 N/kW. Tank background pressure precludes direct measurement of exhaust velocity which is inferred from calculated pressure and temperature in the discharge to be about 14 km/sec. Efficiency, based on this velocity and measured T/P is .54 + or - .07. Thruster ablation is zero at the throat and becomes measurable further upstream, indicating that radiative ablation is occurring late in the pulse.

Burton, R. L.↗
NASA NTRS1990

The effects of extraterrestrial environments on high voltage distribution

The problems encountered in the transmission of high-power (kilowatts to megawatts) in extraterrestrial environments are reviewed. A summary of the work at Auburn University in the study of these problems is presented. These studies include high-voltage breakdown in the space environment as influenced by gas contamination and thermal stress, the modeling of lunar transmission lines, particle contamination, and material degradation by the hypervelocity impact of microparticles.

Gordon, Lloyd B.↗
NASA NTRS1990

Effect of structure and morphology on thermal and electrical properties of polycarbonate film capacitors

Research is reported to identify polycarbonate (PC) film characteristics and fabrication procedures which extend the reliable performance range of PC capacitors to 125 C without derating, and establish quality control techniques and transfer technology to US PC film manufacturers. The approach chosen to solve these problems was to develop techniques for fabricating biaxially oriented (BX) 2 microns or thinner PC film with a low dissipation factor up to 140 C; isotropic dimensional stability; high crystallinity; and high voltage breakdown strength. The PC film structure and morphology was then correlated to thermal and electrical capacitor behavior. Analytical techniques were developed to monitor film quality during capacitor fabrication, and as a result, excellent performance was demonstrated during initial capacitor testing.

Yen, S. P. S.↗
NASA NTRS1996

Megavolt, Multigigawatt Pulsed Plasma Switch

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Lee, Ja H.↗
NASA NTRS1969

Proceedings of the Second Workshop on Voltage Breakdown in Electronic Equipment at Low Air Pressure

The Second Workshop on Voltage Breakdown in Electronic Equipment at Low Air Pressure was sponsored by the Jet Propulsion Laboratory, Pasadena, California. It has been three and one-half years since the convening of the first workshop on voltage breakdown. In this interval, gains are evidenced in the progress and sophistication in solving voltage breakdown problems affecting electronic equip­ment operating at high altitudes or other low air pressure environments. Although space applications predominate the area of concern, other projects such as the SST are becoming increasingly involved with voltage breakdown. High-voltage breakdown in spacecraft continues; however, the incidences of occurrence appear to have decreased in spite of an increase in the number of missions flown. This, it is felt, is due to many project managers now requiring all equipment with voltage in excess of 270-V peak to be designed to operate in the critical pressure region without damage, even though its normal functional environment is sea level pressure and the hard vacuum of space. In addition, designers are becoming more aware of the principle of good high-voltage design by selecting void-free components, proper spacing of conductors, isolating high-­voltage circuitry from lower voltage areas, etc. The consensus seems to be that the slight increase in cost to achieve a provable corona-free design is more than offset by the increase in confidence that the equipment will survive accidental loss of vacuum during high-vacuum tests, inadvertent turn on while passing through the critical air-pressure region of earth after launch or outgassing in flight pressurizing the enclosure into the critical pressure region.

E. R. Bunker, Jr.↗
NASA NTRS1979

A study of the deposition of carbide coatings on graphite fibers

The chemical vapor deposition of boron carbide and silicon carbide on graphite fibers to increase their electrical resistance was studied. Silicon carbide coatings were applied without degradation of the mechanical properties of the filaments. These coatings typically added 1000 ohms to the resistance of a filament as measured between two mercury pools. When SiC-coated filaments were oxidized by refluxing in boiling phosphoric acid, average resistance increased by an additional 1000 ohms; in addition resistance increases as high as 150 K ohms and breakdown voltages as high as 17 volts were noted. Data on boron carbide coatings indicated that such coatings would not be effective in increasing resistance, and would degrade the mechanical properties.

Suplinskas, R. J.↗