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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Electrode Erosion and Prefire Studies Towards Fusion Scale Pulsed Power

This study presents a comprehensive investigation of electrode erosion and discharge behavior in spark gap switches over long switching cycle lifetimes. Brass, copper–tungsten (CuW), and stainless steel electrodes are tested under controlled conditions to quantify material degradation, debris accumulation, and changes in breakdown voltage. High-resolution imaging and statistical analysis of spark channel locations and gap breakdown voltages reveal how surface evolution influences long-term performance and reliability. These results provide essential data for lifetime modeling and inform design strategies for pulsed power systems in emerging applications such as private sector fusion energy and large-scale facilities like Sandia’s Z Machine and proposed ZX upgrades, where high repetition reliability and predictable behavior are critical.

electrical breakdown↗
DOE OSTI2023

20-kV GaN Switch Technology Demonstrated in High-Efficiency Medium-Voltage Power Module

GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Analysis of humidity sensitivity of silicon strip sensors for ATLAS upgrade tracker, pre- and post-irradiation

During the prototyping phase of the new ATLAS Inner-Tracker (ITk) strip sensors, a degradation of the device breakdown voltage at high humidity was observed. Although the degradation was temporary, showing a fast recovery in dry conditions, the study of the influence of humidity on the sensor performance was critical to establish counter-measures and handling protocols during production testing in order to ensure the proper performance of the upgraded detector. The work presented here has the objective to study for the first time the breakdown voltage deterioration in presence of ambient humidity of ATLAS ITk production-layout strip sensors with different surface properties, before and after proton, neutron and gamma irradiations. A study of the humidity sensitivity of miniature ATLAS ITk strip sensors, before and after proton irradiations, is also presented to compare the sensitivity of devices with different sizes. The sensors were also exposed for several days to high humidity with the aim to recreate and evaluate the influence of the detector integration environment expected during the Large Hadron Collider (LHC) Long Shutdown 3 (LS3) in 2026, where the sensors will be exposed to ambient humidity for prolonged times.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Diffusion of acceptor dopants in monoclinic 𝛽−Ga 2⁢ O 3

𝛽−Ga 2 ⁢O 3 is a promising material for next-generation power electronics because of its ultrawide band gap and high critical breakdown voltage. However, realizing its full potential requires precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the diffusion behavior of eight potential deep-level substitutional acceptors (Au, Ca, Co, Cu, Fe, Mg, Mn, and Ni) in 𝛽−Ga 2 ⁢O 3 . We consider two key diffusion mechanisms: (i) interstitial diffusion under nonequilibrium conditions relevant to ion implantation, and (ii) trap-limited diffusion (TLD) under near-equilibrium thermal annealing conditions. Our results reveal a strong diffusion anisotropy along the 𝑏 and 𝑐 axes, with dopant behavior governed by competition between diffusion and incorporation (or dissociation) activation energies. Under interstitial diffusion, Ca$^{2+}_{i}$ and Mg$^{2+}_{i}$ show the most favorable combination of low migration and incorporation barriers, making them promising candidates for efficient doping along the 𝑏 and 𝑐 axes, respectively. In contrast, Au$^{+}_{i}$ diffuses readily, but exhibits an incorporation barrier that exceeds 5 eV, rendering it ineffective as a dopant. From a thermal stability perspective, Co$^{2+}_{i}$ shows poor activation but high diffusion barriers, which may suppress undesirable migration at elevated temperatures. Under trap-limited diffusion, the dissociation of dopant-host complexes controls mobility. Mg$^{2+}_{i}$ again emerges as a leading candidate, exhibiting the lowest dissociation barriers along both axes, whereas Co$^{2+}_{i}$ and Fe$^{2+}_{i}$ display the highest barriers, suggesting improved dopant retention under thermal stress. In conclusion, our findings guide dopant selection by balancing activation and thermal stability, essential for robust semi-insulating substrates.

Defects↗
DOE OSTI2024

Design, characterization and installation of the NEXT-100 cathode and electroluminescence regions

NEXT-100 is currently being constructed at the Laboratorio Subterráneo de Canfranc in the Spanish Pyrenees and will search for neutrinoless double beta decay using a high-pressure gaseous time projection chamber (TPC) with 100 kg of xenon. Charge amplification is carried out via electroluminescence (EL) which is the process of accelerating electrons in a high electric field region causing secondary scintillation of the medium proportional to the initial charge. The NEXT-100 EL and cathode regions are made from tensioned hexagonal meshes of 1 m diameter. This paper describes the design, characterization, and installation of these parts for NEXT-100. Simulations of the electric field are performed to model the drift and amplification of ionization electrons produced in the detector under various EL region alignments and rotations. Measurements of the electrostatic breakdown voltage in air characterize performance under high voltage conditions and identify breakdown points. Furthermore, the electrostatic deflection of the mesh is quantified and fit to a first-principles mechanical model. Measurements were performed with both a standalone test EL region and with the NEXT-100 EL region before its installation in the detector. Finally, we describe the parts as installed in NEXT-100, following their deployment in Summer 2023.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Humidity sensitivity of large area silicon sensors: Study and implications

The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. Here we present an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

MAGNETICALLY SUSPENDED CANNED ROTOR PUMPS FOR THE INTEGRAL MOLTEN SALT REACTOR

This project developed a molten salt pump design for small modular reactors, concentrated solar, and Gen IV nuclear reactors with a magnetically levitated rotor that can operate at temperatures of up to 700 °C. This eliminates the need for rotating seals and roller element bearings which require maintenance and are prone to failure. The pump design is also more compact than existing molten salt pump designs which require long shafts to thermally isolate the electric motor. The aims of the project are to: 1) design and test the molten salt pump, 2) develop and test a high temperature position sensor needed for magnetic bearing control, and 3) develop and test high temperature coil fabrication methods for electric motor and magnetic bearing fabrication. To develop the high temperature coils, conductor materials were analyzed for oxidation, diffusion, cladding, and resistivity. Of the candidate conductor materials that met the requirements, silver was chosen. The long-term impact of radiation on silver resistivity was analyzed by developing a model of a generic molten salt fast reactor to model the conductor irradiation in worst case scenarios. The analysis showed that increased resistivity due to transmutation of silver decreases exponentially with the reactor reflector thickness. Different electrical insulation materials were tested and the final high temperature coils developed were able to withstand conductor to ground voltages up to 1800 V before insulation breakdown. Magnetic bearings require high-precision high-speed measurements of the rotor position to operate. Current commercial position sensors can only operate up to 550 °C so a novel position sensor was developed that can operate up to 800 °C. These sensors were also designed to measure the position of the metallic rotor through a thin metallic corrosion barrier that protects that coils, insulation, and magnetic cores so that the salt containment barrier does not have any penetrations. The high-temperature sensor was tested and had comparable performance to commercially available inductive position sensors. The sensor design and signal processing has led to several invention disclosures. The magnetically levitated molten salt pump design was completed and analyzed. The chloride salt test loop at Oak Ridge National Laboratory was chosen to test the pump and the pump hydraulics and power were designed for the test loop flow and pressure requirements. Classes of motor designs that do not utilize permanent magnetic were considered for the high-temperature motor. After extensive analysis of their performance, a synchronous reluctance motor was chosen for the pump. The design was refined and analyzed to optimize performance. The magnetic bearings were designed to meet the force and frequency requirements necessary to levitate the rotor and reject disturbances from rotor imbalance, motor forces, and hydraulic forces. Compliant mounts for the position sensors were designed that would not damage the ceramic sensor components and maintain sensor alignment over a wide temperature range. A thermal hydraulic analysis of the molten salt coolant flow used to cool the rotor and stator was performed to ensure that the maximum temperature in the rotor and stator will not exceed 725 °C. The corrosion barrier and casing were designed to maintain the salt fluid boundary by using compliant features to absorb large expansion mismatches due to different coefficients of thermal expansion (CTE). Finally, the salt drain and fill systems were designed along with the pump support structure, integration with the test loop, and thermal insulation and heating. Corrosion barrier fabrication experiments were performed to assess using laser cladding to apply a sub-millimeter corrosion barrier to the surface of a Fe-Co-V magnetic core material. The cladding method showed minimal mixing between materials at their interface and withstood temperature cycling without damage to the cladding. The technology commercialization is focused on the high-temperature position sensors and there has been significant interest from the nuclear industry in utilizing these sensors along with some interest from the aerospace industry. The project also led to a research collaboration with a fusion energy industrial partner to study barriers to scaling the pump design from the kW size to the MW size. This research collaboration will also study methods to create high-temperature coils that have conductor to ground breakdown voltages above 5 kV. The successful development of high-temperature electromagnetic coils and high-temperature position sensors greatly increases the temperature limits for electromagnetic devices that don’t rely on permanent magnets. This includes electric motors, magnetic bearings, linear actuators, rotary position and velocity sensing, actuated valves, and generators to name a few. This will fill a current need in molten salt reactors, concentrated solar, and fusion energy for these critical peripheral devices needed for practical reactor designs that do not currently have commercial solutions.

Hines, J Wesley↗
DOE OSTI2020

Fast rise breakdown in dielectric filled air gap for surge protection

Electric discharge across an air gap can be self-healing, providing a unique capability for repetitive, fast, high-voltage/current switching applications through arc conduction. Furthermore, incorporating dielectric granules in the air gap stimulates gas ionization, which lowers the breakdown voltage and narrows breakdown voltage distribution, thereby enabling engineered surge protection from multiple lightning strikes on aerospace vehicles and sensitive solid-state electronics in critical systems. This study investigates the effect of the permittivity of dielectric granules, gap filling, surface roughness, and metal work function on fast-rising, high-voltage breakdowns. In addition to the air gap width, these factors play important roles in gas ionization, field concentration, and initiation of electrical discharge and arcing. Therefore, they could potentially be used to control and narrow operational breakdown voltages for practical applications. Additionally, a modified Langevin–Debye model is developed to correlate the breakdown voltage and the permittivity of the dielectric filler. These investigations identify and highlight key underpinning mechanisms governing the gas discharge behavior across a dielectric filled air gap during voltage surge events.

42 ENGINEERING↗
DOE OSTI2021

Hybrid BaTiO 3 /SiN x /AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance

In this Letter, we demonstrate hybrid GaN lateral Schottky barrier diodes with enhanced breakdown characteristics and a low turn-on voltage. These diodes incorporate a lateral Schottky barrier in combination with a high permittivity material beneath the field plate, enabling high average breakdown fields and a low turn-on voltage. Average electric fields up to 2.38 MV/cm were achieved for devices with an anode–cathode spacing of 4 μm, while maintaining with a turn-on voltage of 0.48 V. In contrast, SiN x /AlGaN/GaN control lateral Schottky diodes displayed an average breakdown field of ~0.7 MV/cm for devices with similar dimensions with a turn-on voltage of 0.46 V. The use of a high-permittivity dielectric can more effectively utilize the high breakdown fields in wide bandgap materials by proper management of the electric field. This demonstration provides an innovative way to integrate high-permittivity materials with GaN lateral devices for improved breakdown and resistance characteristics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

GaN MOCVD Growth on Native substrates for High Voltage (15-20 KV) Vertical Power Devices

This project aims to develop metalorganic chemical vapor deposition (MOCVD) homoepitaxy of GaN on native substrates with fast growth rate (15-20 μm/hr), low background doping (low-10 15 cm -3 ) and smooth surface morphology via comprehensive understanding of the crystal growth process including high quality GaN substrate development and surface preparation, impurity and native defects control, and their impacts on the breakdown field. The team successfully developed a new growth process by introducing the laser-assisted MOCVD (LA-MOCVD) process to address the limited growth rates of GaN in the traditional MOCVD process. Specifically, the use of the CO2 laser with lasing wavelength of 9.219 μm, the strong coupling between the laser beam with the ammonia (GaN MOCVD precursor) leads to efficient decomposition of NH3 which significantly increases the effective group V/III molar ratio and thus suppresses C impurity incorporation in MOCVD GaN. The reduction in C incorporation in LA-MOCVD GaN is especially prominent when the GaN growth rate is fast (> 10 μm/hr), which allows to develop thick GaN films with high crystalline quality and low controllable doping needed for vertical high power device applications. The results of this project lead to the demonstration of vertical GaN PN diodes with record breakdown voltage of ~ 8kV with high Baliga’s figure of merit.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Study of dielectric breakdown in liquid xenon with XeBrA: The xenon breakdown apparatus

Maintaining the electric fields necessary for the current generation of noble liquid time projection chambers (TPCs), with drift lengths exceeding 1 m, requires a large negative voltage applied to their cathode. Delivering such high voltage is associated with an elevated risk of electrostatic discharge and electroluminescence, which would be detrimental to the performance of the experiment. The Xenon Breakdown Apparatus (XeBrA) is a 5-l, high voltage test chamber built to investigate the contributing factors to electrical breakdown in noble liquids. Here, in this work, we present the main findings after conducting scans over stressed electrode areas, surface finish, pressure, and high voltage ramp speed in the medium of liquid xenon. Area scaling and surface finish were observed to be the dominant factors affecting breakdown, whereas no significant changes were observed with varying pressure or ramp speed. A general rise in both the anode current and photon rate was observed in the last 30 s, leading up to a breakdown, with a marked increase in the last couple of seconds. In addition, the position of breakdowns was reconstructed with a system of high-speed cameras and a moderate correlation with the Fowler–Nordheim field emission model was found. Tentative evidence for bubble nucleation being the originating mechanism of breakdown in the liquid was also observed. We deem the results presented in this work to be of particular interest for the design of future, large TPCs, and practical recommendations are provided.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2020

AMPPED LDRD: Advanced Models of the Physics & Phenomena of Electrical Discharge.

This Laboratory Directed Research and Development (LDRD) project aimed at addressing an unmet need for physics-based models that enable prediction of electrical breakdown in the presence of high voltage gradients and real-world environments. This project focused on understanding coupled plasma-surface feedback phenomena critical to electrical discharge processes and design of breakdown voltages, breakdown times, and breakdown paths. New secondary electron emission and coupled plasma-surface measurement methods and models were developed. Highly reproducible discharge experiments were developed to provide current-voltage data as a function of time, and methods were developed to condition electrodes for predictable discharge. To assess plasma-surface feedback mechanisms, new surface physics capabilities, including measurement systems for local and global photoemission yield and ion-induced secondary electron emission yield were developed. Discharge models were developed to incorporate these yields for predicting discharge behavior to understand influence of surface physics on discharge current and time evolution, and methods to accelerate these simulations were demonstrated. A key finding was that the initiation process of a non-vacuum discharge appears highly dependent on photoemission at the cathode. Advanced diagnostics were developed, including spatial electrical field imaging, spectroscopy of plasmas, and high-speed imaging of discharge event s in metal and dielectric environments. These diagnostics and improved electrical models are a step toward enabling quantitative design margins, assurance of safety architectures, and implementation of novel materials and technologies for wide ranging energy and electronics applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage ( BV ) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Physics↗
DOE OSTI2025

Voltage breakdown analyses in anion exchange membrane water electrolysis – the contributions of catalyst layer resistance on overall overpotentials

Despite many recent advances, overpotentials remain high for anion exchange membrane water electrolyzers (AEMWEs). Voltage breakdown analyses (VBA) can help decouple the origins of overpotentials and facilitate design decisions to improve cell performance, but studies investigating how to adapt and apply VBA to AEMWEs are lacking. Specifically, catalyst layer resistances and their contributions to overpotentials are not consistently quantified in water electrolysis and are rarely quantified for AEMWEs. This work presents a systematic methodology for VBA tailored to AEMWEs, including an approach to Tafel analysis in the absence of a reference electrode and under conditions where both the oxygen evolution reaction and hydrogen evolution reaction exhibit significant overpotentials. Catalyst layer resistance contributions are diagnosed via changes in the catalyst layer thickness, transport layer porosity, ionomer content, and electrolyte concentration. In this study, we explain discrepancies between inherent catalytic kinetics and device level performance and identify catalyst layer design strategies to reduce catalyst layer resistances.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Uncovering microstructure and composition susceptibility of high permittivity ceramic granules to plasma-induced arc breakdown

Effective diversion of surge currents is vital to prevent unwanted damage to sensitive electronics. Among the most successful and efficient strategies relies on a dielectric stimulated arc breakdown mechanism with high permittivity ceramic granules in a spark-gap geometry. Although generally regarded as a self-healing process, substantial energy deposition may occur that, over time, diminishes the ability to withstand repeated electrical assaults. We investigate the susceptibility of lead–magnesium–niobate–lead titanate (PMN–PT) granule microstructure and composition changes following many exposures to high voltage impulses resulting in arc breakdown. Scanning electron microscopy and energy-dispersive spectroscopy mapping reveal a broad range of thermal and mechanical defects entailing thermal reduction of constituent PMN–PT metal ions and recasting due to rapid eruption of volatile species. Additionally, evidence of local melting and microcracking are apparent that can have deleterious impact on the proper function of the granules, namely, the ability to concentrate electric fields across air gaps to establish and sustain discharge pathways. We propose that the localized nature of damage and stochasticity associated with the dielectric stimulated breakdown mechanism may allow granules to maintain functionality provided no permanent conduction paths are established.

36 MATERIALS SCIENCE↗