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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗
NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗
DOE OSTI2021

Electron-impact ionization of the Pb atom

Electron-impact ionization cross sections are calculated for the ground configuration of the Pb atom. Time-dependent close-coupling cross sections for the direct ionization of the 6 s and 6 p subshells leading to single ionization are calculated with and without a polarization potential. Configuration-average distorted-wave cross sections for the direct ionization of the 6 s and 6 p subshells leading to single ionization are also calculated with and without a polarization potential. We find the time-dependent close-coupling cross sections using a polarization potential to be in good agreement with convergent-close-coupling cross sections using a polarization potential. The total direct ionization cross sections are compared to two sets of experimental measurements. The differences between the direct ionization cross sections and the experimental measurements are mainly due to indirect ionization cross sections coming from the 6 s 2 6 p 2 → 6 s 6 p 3 excitation followed by autoionization..

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS1977

Angular distribution of Auger electrons due to 3d-shell impact ionization of krypton

Cross sections for electron impact ionization of krypton due to ejection of a 3d-shell electron have been calculated using screened hydrogenic and Hartree-Slater wavefunctions for the target atom. While the total ionization cross sections in the two approximations are within 10% of each other, the Auger electron angular distribution, related to cross sections for specific magnetic quantum numbers of the 3d electrons, are widely different in the two approximations. The angular distribution due to the Hartree-Slater approximation is in excellent agreement with measurement. The physical reason for the discrepancies in the two approximations is explained.

Omidvar, K.↗
NASA NTRS1995

Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation

The hole initiated impact ionization rate in bulk silicon and GaAs is calculated using a numerical formulation of the impact ionization transition rate incorporated into an ensemble Monte Carlo simulation. The transition rate is calculated from Fermi's golden rule using a two-body screened Coulomb interaction including a wavevector dependent dielectric function. It is found that the effective threshold for hole initiated ionization is relatively soft in both materials, that the split-off band dominates the ionization process in GaAs. and that no clear dominance by any one band is observed in silicon, though the rate out of the light hole band is greatest.

Oguzman, Ismail H.↗
DOE OSTI2020

Ultra‐Steep Slope Impact Ionization Transistors Based on Graphene/InAs Heterostructures

With the continued scaling of transistors, there is a growing trend for developing steep slope transistors with subthreshold swing (SS) below Boltzmann limitation ( k T/ q ). To this end, impact ionization metal oxide semiconductor (I‐MOS) transistors are attractive for a unique combination of high ON‐state current density, small hysteresis, and ultra‐steep SS slope. However, the performance of I‐MOS is generally limited by the relatively thick depletion region and large operation voltage required for the activation of impact ionization (typically >5 V). Herein, a high‐performance I‐MOS is constructed by van der Waals integrating single‐crystal InAs film with graphene. Due to the low bandgap of InAs as well as the semi‐metallic nature of graphene, the InAs/graphene I‐MOS demonstrates a low operation voltage of 1.5 V, high ON‐state current of 230 μA μm −1 , steep SS <0.6 mV dec −1 , and large ON–OFF ratio >10 6 at temperature below 200 K. Furthermore, a negative transconductance and steep current oscillation is observed in the subthreshold regime, and a device working mechanism is proposed for this novel phenomenon. This study not only pushes the performance limit of I‐MOS but also defines a general pathway to van der Waals heterostructures between conventional III–V compound semiconductors and novel 2D materials for unconventional device functions.

Liu, Yuan↗
NASA NTRS1974

The energy distribution cross section in threshold electron-atom impact ionization

The flatness of the energy differential cross section in impact ionization is derived analytically in the Wannier theory. However it is shown that the Wannier zone is confined to a region of the order E/5 is less than or equal to epsilon is less than or equal to 4E/5, where E is the available energy and epsilon is the energy of the electrons. By contrasting the known results of photoionization and photodetachment, one can cogently argue that in the complementary region where electrons share their energy very unequally the cross section rises to a value independent of E, and that this region determines the form of the threshold law.

Temkin, A.↗
NASA NTRS1990

Impact ionization in the base of a hot-electron AlSb/InAs bipolar transistor

The operation of a new AlSb/InAs heterojunction bipolar transistor is studied. The electrons are injected into a p-InAs base across the AlSb/InAs heterojunction. The conduction-band discontinuity at this heterojunction is sufficiently large so that energy of the electrons injected into InAs exceeds the threshold for generating electron-hole pairs by impact ionization. The observed incremental common base current at zero collector-base bias decreases and becomes negative as the emitter current is increased, thus providing direct evidence for impact ionization entirely by band-edge discontinuities.

Vengurlekar, Arvind S.↗
DOE OSTI2020

Measuring the impact ionization and charge trapping probabilities in SuperCDMS HVeV phonon sensing detectors

A 0.93 g 1×1×0.4 cm 3 SuperCDMS silicon HVeV detector operated at 30 mK was illuminated by 1.91 eV photons using a room temperature pulsed laser coupled to the cryostat via fiber optic. In this work, the detector’s response under a variety of specific operating conditions was used to study the detector leakage current, charge trapping, and impact ionization in the high-purity Si substrate. The measured probabilities for a charge carrier in the detector to undergo charge trapping (0.713±0.093%) or cause impact ionization (1.576±0.110%) were found to be nearly independent of bias polarity and charge-carrier type (electron or hole) for substrate biases of ±140 V.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Electron-impact ionization from excited states method

We present a distorted-wave with exchange (DWE) formulation for computing electron-impact ionization (EII) cross sections within the recently developed excited states method (ESM) for plasmas. The ESM provides a self-consistent quantum-mechanical description of both bound and continuum electronic states in dense plasmas, incorporating finite-temperature and screening effects absent in isolated-atom approaches. Using this framework, we calculate EII cross sections for lithium across a wide range of temperatures and densities. We show that the ESM reproduces the isolated-atom limit at low densities while capturing strong plasma effects, such as pressure ionization and shape resonances, at solid density. Comparisons with isolated-atom DWE and average-atom (AA) calculations reveal that, although AA cross sections can approximate configuration average behavior, the ESM provides more accurate, state-resolved answers. In conclusion, these results demonstrate that the ESM allows one to obtain rate coefficients for collisional-radiative modeling of plasmas out of local thermodynamical equilibrium.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1987

Parametrization of electron impact ionization cross sections for CO, CO2, NH3 and SO2

The electron impact ionization and dissociative ionization cross section data of CO, CO2, CH4, NH3, and SO2, measured in the laboratory, were parameterized utilizing an empirical formula based on the Born approximation. For this purpose an chi squared minimization technique was employed which provided an excellent fit to the experimental data.

Srivastava, Santosh K.↗
NASA NTRS1973

Optical potential approach to the electron-atom impact ionization threshold problem

The problem of the threshold law for electron-atom impact ionization is reconsidered as an extrapolation of inelastic cross sections through the ionization threshold. The cross sections are evaluated from a distorted wave matrix element, the final state of which describes the scattering from the Nth excited state of the target atom. The actual calculation is carried for the e-H system, and a model is introduced which is shown to preserve the essential properties of the problem while at the same time reducing the dimensionability of the Schrodinger equation. Nevertheless, the scattering equation is still very complex. It is dominated by the optical potential which is expanded in terms of eigen-spectrum of QHQ. It is shown by actual calculation that the lower eigenvalues of this spectrum descend below the relevant inelastic thresholds; it follows rigorously that the optical potential contains repulsive terms. Analytical solutions of the final state wave function are obtained with several approximations of the optical potential.

Temkin, A.↗
NASA NTRS1981

Impact ionization in Ga/1-x/Al/x/Sb - An alternative interpretation

The existence of the recently proposed resonance impact ionization process in gallium aluminum antimonide is questioned. An alternative interpretation of the data originally used to support the claim for a resonant process is presented which invokes only conventional, well-established processes.

Kasemset, D.↗
NASA NTRS1986

Impact ionization across the conduction-band-edge discontinuity of quantum-well heterostructures

Impact ionization across the band-edge discontinuity of quantum-well heterostructures is studied theoretically. A heterolayer structure of alternating Al(x)Ga(1-x)As and GaAs layers is considered where the GaAs layers are heavily doped with donors. Thus a large number of electrons is confined to the quantum-well region. Incident electrons are heated up by applied electric fields and collide with the electrons confined in the well regions. Both the ionization rate as a function of the incident energy, and average ionization rates are computed. Device applications of such multiple quantum-well structures and the possibility of a complete analog to the conventional photomultiplier are discussed.

Chuang, S. L.↗
NASA NTRS1984

Mass spectrometric determination of partial and total electron impact ionization cross sections of SO2 from threshold up to 200 eV

The partial and total ionization cross section for the formation of O(+), S(+), SO(+) and SO2(+) from the impact ionization of SO2 are reported, extending the electron impact energies to 200 eV. The relative flow technique is used to determine the cross section values. The threshold potentials for the products are 23.5 eV for O(+), 16.5 eV for S(+), 16.5 eV for SO(+), and 12.5 eV for SO2(+). Good agreement with the literature is found for SO(+) and SO2(+).

Orient, O. J.↗