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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers

Lasers based on AlGaAs/InGaAs/GaAs heterostructures operating in the spectral range of 1.0 − 1.1 μm are investigated in order to optimise cladding layers. The effect of the thickness and composition of the cladding layers on the leakage of radiation from the laser waveguide is analysed. It is shown that for cladding thicknesses of 0.86 − 1.24 μm, it almost does not affect the output optical power. The effect of the crystal length and reflectivity of the laser mirrors on the leaky wave is demonstrated. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids

Heavy-metal-free III–V colloidal quantum dots (CQDs) show promise in optoelectronics: Recent advancements in the synthesis of large-diameter indium arsenide (InAs) CQDs provide access to short-wave infrared (IR) wavelengths for three-dimensional ranging and imaging. In early studies, however, we were unable to achieve a rectifying photodiode using CQDs and molybdenum oxide/polymer hole transport layers, as the shallow valence bandedge (5.0 eV) was misaligned with the ionization potentials of the widely used transport layers. This occurred when increasing CQD diameter to decrease the bandgap below 1.1 eV. Here, we develop a rectifying junction among InAs CQD layers, where we use molecular surface modifiers to tune the energy levels of InAs CQDs electrostatically. Previously developed bifunctional dithiol ligands, established for II-VI and IV-VI CQDs, exhibit slow reaction kinetics with III-V surfaces, causing the exchange to fail. Here, we study carboxylate and thiolate binding groups, united with electron-donating free end groups, that shift upward the valence bandedge of InAs CQDs, producing valence band energies as shallow as 4.8 eV. Photophysical studies combined with density functional theory show that carboxylate-based passivants participate in strong bidentate bridging with both In and As on the CQD surface. The tuned CQD layer incorporated into a photodiode structure achieves improved performance with EQE (external quantum efficiency) of 35% (>1 μm) and dark current density < 400 nA cm -2 , a >25% increase in EQE and >90% reduced dark current density compared to the reference device. This work represents an advance over previous III-V CQD short-wavelength IR photodetectors (EQE < 5%, dark current > 10,000 nA cm -2 ).

36 MATERIALS SCIENCE↗
DOE OSTI2020

Long interior carrier lifetime in selective-area InAs nanowires on silicon

Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pump-probe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns , 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm · s - 1 . Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Enhanced radiative and thermal properties from surface encapsulation of InAs nanowires

In this work, photoluminescence (PL), quantum efficiency and carrier dynamics are investigated in indium arsenide (InAs) nanowires (NWs) with various surface treatments, including a molecular beam epitaxy (MBE)-grown semiconductor shell passivation, sulfur-passivation, alumina (Al 2 O 3 ) coating by atomic layer deposition (ALD) and polydimethylsiloxane (PDMS) spin-coating. The ALD-dielectric layer-coated InAs core-shell NWs show a maximum 13-fold increase in PL intensity. In contrast to the previous reports, this enhancement is found to be due to increased radiative rate from an enhanced Purcell factor, better thermal conductance and higher carrier injection within the NWs instead of improved surface quality. Numeric simulations confirm the experimentally observed increased radiative rate. Further improvements are suggested with even thicker capped InAs NWs. Carrier lifetime in surface-treated NWs is extended and shows long-term stability, critical for practical devices.

36 MATERIALS SCIENCE↗
NASA NTRS1974

The optics and calibration of the Venus solar flux radiometer

The described instrument is to measure the net solar radiation as a function of altitude as the probe descends through the Venus atmosphere. The data are to provide a basis for the study of the mechanisms which are responsible for the high surface temperature of the planet Venus. The instrument consists of two separate sections, including an optical head and an electronics package. The radiance is measured with silicon and indium arsenide detectors. Details of radiometer design are discussed along with the characteristics of the optical system and the detectors. Angular and radiometric calibration procedures are also considered.

Palmer, J. M.↗
NASA NTRS1980

The 3-5 semiconductor solid solution single crystal growth

Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

Gertner, E. R.↗
NASA NTRS1982

Integrated Submillimeter-Wave Mixer

Indium arsenide Schottky-Barrier diodes in gallium antimonide substrate mix submillimeter waves, producing much lower frequency output. Integrated diode array has relatively-high signal-to-noise ratio and wide frequency band. Operates at moderate cryogenic temperatures (100 K).

Maserjian, J.↗
NASA NTRS1989

Pulsed Molecular Beams For Growth Of InAs On GaAs

Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

Grunthaner, Frank J.↗
NASA NTRS1993

Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs polycrystals in a crucible are doubly sealed in two quartz tubes for safety. The GHF consists of two zones, namely, high temperature and low temperature zones, which results in a large temperature gradient at the interface. Crystal growth is performed by moving the furnace (i.e. the temperature profile) from the left to right at a definite rate. Thus, we will grow crystals both on Earth and in space under the same conditions. As previously described, it is possible to obtain good quality crystals which are homogeneous in composition both macroscopically and microscopically due to the lack of convection in space. We are planning to study the effects of convection on crystal growth from a melt by comparing and characterizing the properties of crystals grown on Earth with those grown in space.

Tatsumi, Masami↗
NASA NTRS2001

Development of Numerical Models for Performance Predictions of Single-Photon Avalanche Photodetectors (SPAP) for the 2-Micron Regime

Field dependent drift velocity results are presented for electron transport in bulk Indium Arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 microns region of interest for atmospheric remote sensing applications. The dark current response was also evaluated. The role of the various components has been analyzed. For shorter devices, the tunneling component is shown to dominate at low temperatures. Finally, possible structures for enhanced photodetection are proposed for future research.

Joshi, Ravindra P.↗
NASA NTRS2015

Nanowire Photovoltaic Devices

Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

Forbes, David↗
DOE OSTI2024

Edge majorana quasiparticles and qubits

Various embodiments described herein provide for a topological quantum computer that uses edge Majorana quasi-particles to form qubits. An inverted Indium Arsenide (InAs) and Gallium Antimonide (GaSb) heterostructure is disclosed that is a quantum spin Hall insulator. A layer of aluminum can be deposited over a nanotube that is placed across the layers of the heterostructure. Once the nanotube is removed, and a gate is formed on the heterostructure and the heterostructure is cooled so that the aluminum becomes superconducting, helical edge states are formed at the junction of the super conducting aluminum, the InAs, and the GaSb which creates a Majorana zero modes (MZMs) at zero magnetic field. The MZMs can be used to construct a topological qubit for fault-resistant topological quantum computation.

Pan, Wei↗
NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗
NASA NTRS1990

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

Michael, Sherif↗
DOE OSTI2020

Quantum dot polarisation converter in an optomechanical cavity

We propose a scheme of a quantum photon polarisation converter, which is based on controlled electron – photon – phonon transitions in a hybrid semiconductor nanostructure. This structure consists of a GaAs/InAs quantum dot (QD) that has a parallelepiped shape and contains a single electron, and an optomechanical microcavity (MC) based on a photonic crystal (PC) that supports two orthogonally polarised photonic modes and one mechanical (phonon) mode. Within the framework of the microscopic theory, the QD and MC performance characteristics are found. Populations of states of the system as functions of time and its parameters are calculated. The principal possibility of photon polarisation conversion using transitions in a five-level resonance scheme for coherent (single-photon) and steady-state (subphoton) regimes is shown. The MC optical and mechanical spectra are simulated, and the PC structure parameters are selected to ensure the efficient operation of the converter. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Second-harmonic generation in zinc blende crystals under combined action of femtosecond optical and strong terahertz fields

The influence of a short intense (with an electric field strength up to 250 kV cm{sup −1}) terahertz (THz) pulse on the generation of second harmonic (SH) of Ti : sapphire laser radiation in crystals of zinc blende type (InAs and GaAs), characterised by nonzero bulk quadratic susceptibility, is investigated. It is experimentally shown for InAs(100) that, in the case of s-polarised first and second harmonics, an application of s-polarised THz field changes significantly the SH signal. The THz field-induced azimuthal dependence of the SH signal is in good agreement with the results of theoretical calculation within a phenomenological approach. The dependence of the SH signal on the delay time between the optical and THz pulses is investigated. This dependence for the GaAs crystal repeats the envelope of the THz pulse intensity, whereas in the case of InAs crystal there is a significant discrepancy, caused by the nonlinear dynamics of strong THz field in InAs. (nonlinear optical phenomena)

36 MATERIALS SCIENCE↗
NASA NTRS2004

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Wilt, David M.↗
NASA NTRS1997

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

Wilt, David M.↗