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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

The role of weak interlayer coupling in the spin-reorientation of perpendicular ultrathin Co-Fe-B/MgO-based heterostructures

Ultrathin magnetic tunneling structures implicate fundamental interlayer exchange coupling between magnetic layers. Here, we describe its important role in the spin-reorientation transition of weakly coupled perpendicular ultrathin Ta/Co-Fe-B/MgO/Co-Fe-B/Ta heterostructures. Near the spin-reorientation, the domain structure is quite sensitive to weak interlayer exchange coupling. Antiferromagnetic coupling stabilizes homogeneous perpendicular magnetization at the remanence, whereas ferromagnetic coupling favors in-/out-of-plane stripe domains. Close to the spin-reorientation transition, even the subtle changes of interlayer exchange coupling can lead to reversible switching between stable in- and out-of-plane states. Our results suggest that this multi-stability caused by the interplay of perpendicular anisotropy and weak interlayer coupling can be utilized in perpendicular spin torque devices operating under reduced spin currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Magnetic properties and interlayer coupling of epitaxial Co/Cu films on Si

Thin films of Co and Co/Cu/Co trilayers with wedged Cu interlayers were grown epitaxially on Cu buffer layers on hydrogen passivated Si(001) wafers. We find that single Co layers have a well-defined four-fold anisotropy but with smaller in-plane anisotropies than observed in Co grown on Cu crystals. Ruderman–Kittel–Kasuya–Yosida (RKKY) interlayer coupling is observed in one Co/Cu/Co sample which is the smoothest of the films as measured by atomic force microscopy. Some of the films also form a dot-like structure on the surface. Intermixing at elevated temperatures between the Cu buffer and Si limits the ability to form flat surfaces to promote RKKY coupling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene graphene and graphene substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe 2 Nanostructures

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Wavelength-dependent optical enhancement of superconducting interlayer coupling in La 1.885 Ba 0.115 CuO 4

We analyze the pump wavelength dependence for the photo-induced enhancement of interlayer coupling in La 1.885 Ba 0.115 CuO 4 , which is promoted by optical melting of the stripe order. In the equilibrium superconducting state (T < TC = 13 K), in which stripes and superconductivity coexist, time-domain THz spectroscopy reveals a photo-induced blue-shift of the Josephson Plasma Resonance after excitation with optical pulses polarized perpendicular to the CuO2 planes. In the striped, non-superconducting state (TC < T < TSO ≃ 40 K) a transient plasma resonance similar to that seen below TC appears from a featureless equilibrium reflectivity. Most strikingly, both these effects become stronger upon tuning of the pump wavelength from the mid-infrared to the visible, underscoring an unconventional competition between stripe order and superconductivity, which occurs on energy scales far above the ordering temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Interlayer coupling in two-dimensional MoS 2 and phosphorene bilayers: Benchmark quantum Monte Carlo study of interaction energies and quasiparticle band gaps

Using high-accuracy many-body quantum Monte Carlo (QMC) methods, we study the effect of interlayer coupling on the properties of two-dimensional freestanding bilayers (BLs) of MoS 2 and phosphorene. The properties of the two BL-materials are very different and largely determined by the interlayer interaction, which is purely van der Waals in MoS 2 and partially electronic/chemical in phosphorene, resulting in a modest layer-dependent property modulation in MoS 2 and strong modulation in phosphorene. Multireference and symmetry considerations are used to construct state-of-the-art accuracy QMC trial wave functions. We determine the quasiparticle band gaps for both materials, $Δ^{\textrm{qp}}_{Γ→\textrm{K}}$ = 2.45 ± 0.05 eV in BL-MoS 2 and $Δ^{\textrm{qp}}_{Γ→Γ}$=1.59 ±0.1eV in BL-phosphorene. In conclusion, these benchmark band-gap values make it possible to consolidate the interpretation of the widely scattered experimental and theory data.

Huang, Yongda [Slovak Academy of Sciences (SAS), B↗
DOE OSTI2018

Interlayer Couplings Mediated by Antiferromagnetic Magnons

Collinear antiferromagnets (AFs) support two degenerate magnon excitations carrying opposite spin polarizations, by which magnons can function as electrons in various spin-related phenomena. In an insulating ferromagnet(F)/AF/F trilayer, we explore the magnon-mediated interlayer coupling by calculating the magnon thermal energy in the AF as a function of the orientations of the Fs. Furthermore, the effect manifests as an interlayer exchange interaction and a perpendicular magnetic anisotropy; they both depend on temperature and the AF thickness. In particular, the exchange interaction turns out to be antiferromagnetic at low temperatures and ferromagnetic at high temperatures, whose magnitude can be 10–100 μeV for nanoscale separations, allowing experimental verification.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Enhanced Interlayer Coupling and Excitons in Twin-Stacked Two-Dimensional Magnetic CrSBr Bilayers

The degree of electronic coupling between individual layers in van der Waals heterostructures offers a route to engineer their magnetic, electronic, and optical functionalities. Using state-of-the-art first-principles calculations, in this work, we demonstrate that the electronic coupling between two monolayers of CrSBr─an anisotropic two-dimensional magnetic semiconductor─is highly nonlinear and nonmonotonic with respect to their relative twist angle, exhibiting a pronounced maximum at the twin-stacking configuration. The coupling strength scales with both the degree of overlap of Br orbitals adjacent to the van der Waals gap and the cosine of half of the interlayer spin angle. This enhanced interlayer electronic coupling leads to excitons delocalized across the two layers, with a polarization dependence that reflects the interlayer spin alignment. Our results reveal a sensitive interplay among twist angle, magnetism, and excitonic properties in twin-stacked CrSBr bilayers, suggesting twin stacking as an effective means for engineering interlayer coupling.

2D materials↗
DOE OSTI2016

Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus

The recent renaissance of black phosphorus (BP) as a two-dimensional (2D) layered material has generated tremendous interest, but its unique structural characters underlying many of its outstanding properties still need elucidation. Here we report Raman measurements that reveal an ultralow-frequency collective compression mode (CCM) in BP, which is unprecedented among similar 2D layered materials. This novel CCM indicates an unusually strong interlayer coupling, and this result is quantitatively supported by a phonon frequency analysis and first-principles calculations. Moreover, the CCM and another branch of low-frequency Raman modes shift sensitively with changing number of layers, allowing an accurate determination of the thickness up to tens of atomic layers, which is considerably higher than previously achieved by using high-frequency Raman modes. Lastly, these findings offer fundamental insights and practical tools for further exploration of BP as a highly promising new 2D semiconductor.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Effects of Interlayer Coupling on Hot-Carrier Dynamics in Graphene-Derived van der Waals Heterostructures

Graphene exhibits promise as a plasmonic material with high mode confinement that could enable efficient hot carrier extraction. The lifetimes and mean free paths of energetic carriers have been investigated in free-standing graphene, graphite, and a heterostructure consisting of alternating graphene and hexagonal boron nitride layers using ab initio calculations of electron–electron and electron–phonon scattering in these materials. It is found that the extremely high lifetimes (3 ps) of low-energy carriers near the Dirac point in graphene, which are a 100 times larger than that in noble metals, are reduced by an order of magnitude due to interlayer coupling in graphite, but enhanced in the heterostructure due to phonon mode clamping. However, these lifetimes drop precipitously with increasing carrier energy and are smaller than those in noble metals at energies exceeding 0.5 eV. By analyzing the contribution of different scattering mechanisms and interlayer interactions, desirable spacer layer characteristics—high dielectric constant and heavy atoms—that could pave the way for plasmonic heterostructures with improved hot carrier transport have been identified.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Low temperature magnetic phase transition and interlayer coupling in double-wall carbon nanotubes

The magnetic properties of double wall carbon nanotubes (DWCNTs) were investigated using electron spin resonance (ESR) spectroscopy. An asymmetric resonance line of low intensity was identified and analyzed by the superimposition of a narrow and a broad metallic lineshape, attributed to the distinct contributions of defect spins located on the inner and outer DWCNTs shells. The spin susceptibilities of both ESR components revealed a ferromagnetic phase transition at low temperatures (T < 10 K) with small variation in the corresponding Curie-Weiss temperatures, approaching closely that of metallic single wall carbon nanotubes. Interlayer coupling between the DWCNT layers is suggested to effectively reduce the difference between the transition temperatures for the inner and outer shells and enhance spin-spin interactions between defect spins via the RKKY-type interaction of localized spins with conduction electrons.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Role of weak interlayer coupling in ultrafast exciton-exciton annihilation in two-dimensional rhenium dichalcogenides

Strong interactions between excitons are a characteristic feature of two-dimensional (2D) semiconductors, determining important excitonic properties, such as exciton lifetime, coherence, and photon-emission efficiency. Rhenium disulfide (ReS 2 ), a member of the 2D transition-metal dichalcogenide (TMD) family, has recently attracted great attention due to its unique excitons that exhibit excellent polarization selectivity and coherence features. However, an in-depth understanding of exciton-exciton interactions in ReS 2 is still lacking. In this work, we used ultrafast pump-probe spectroscopy to study exciton-exciton interactions in monolayer (1L), bilayer (2L), and triple layer ReS 2 . Additionally, we directly measure the rate of exciton-exciton annihilation, a representative Auger-type interaction between excitons. It decreases with increasing layer number, as observed in other 2D TMDs. However, while other TMDs exhibit a sharp weakening of exciton-exciton annihilation between 1L and 2L, such behavior was not observed in ReS 2 . We attribute this distinct feature in ReS 2 to the relatively weak interlayer coupling, which prohibits a substantial change in the electronic structure when the thickness varies. This work not only highlights the unique excitonic properties of ReS 2 but also provides novel insight into the thickness dependence of exciton-exciton interactions in 2D systems.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Stacking-dependent interlayer coupling in trilayer MoS 2 with broken inversion symmetry

The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS 2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin–orbit coupling (SOC) and interlayer coupling in different structural symmetries. Lastly, such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS 2 blocks.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Unusual Magnetic Hysteresis and Transition between Vortex and Double Pole States Arising from Interlayer Coupling in Diamond-Shaped Nanostructures

Controlling the magnetic ground states at the nanoscale is a long-standing basic research problem and an important issue in magnetic storage technologies. Here, we designed a nanostructured material that exhibits very unusual hysteresis loops due to a transition between vortex and double pole states. Arrays of 700 nm diamond-shaped nanodots consisting of Py(30 nm)/Ru(t Ru )/Py(30 nm) (Py, permalloy (Ni 80 Fe 20 )) trilayers were fabricated by interference lithography and e-beam evaporation. We show that varying the Ru interlayer spacer thickness (t Ru ) governs the interaction between the Py layers. We found this interaction mainly mediated by two mechanisms: magnetostatic interaction that favors antiparallel (antiferromagnetic, AFM) alignment of the Py layers and exchange interaction that oscillates between ferromagnetic (FM) and AFM couplings. For a certain range of Ru thicknesses, FM coupling dominates and forms magnetic vortices in the upper and lower Py layers. For Ru thicknesses at which AFM coupling dominates, the magnetic state in remanence is a double pole structure. Our results showed that the interlayer exchange coupling interaction remains finite even at 4 nm Ru thickness. Furthermore, the magnetic states in remanence, observed by magnetic force microscopy (MFM), are in good agreement with corresponding hysteresis loops obtained by the magneto-optic Kerr effect (MOKE) and micromagnetic simulations.

interlayer exchange interaction↗
DOE OSTI2015

Interlayer coupling effects on Schottky barrier in the arsenene-graphene van der Waals heterostructures

The electronic characteristics of arsenene-graphene van der Waals (vdW) heterostructures are studied by using first-principles methods. The results show that a linear Dirac-like dispersion relation around the Fermi level can be quite well preserved in the vdW heterostructures. Moreover, the p-type Schottky barrier (0.18 eV) to n-type Schottky barrier (0.31 eV) transition occurs when the interlayer distance increases from 2.8 to 4.5 Å, which indicates that the Schottky barrier can be tuned effectively by the interlayer distance in the vdW heterostructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Quasi-two-dimensional ferromagnetism and anisotropic interlayer couplings in the magnetic topological insulator MnBi 2 Te 4

MnBi 2 Te 4 (MBT) is a promising van der Waals layered antiferromagnetic (AFM) topological insulator that combines a topologically nontrivial inverted Bi-Te band gap with ferromagnetic (FM) layers of Mn ions. Here, the inelastic neutron scattering on single crystals reported here describes rather complex magnetism in MBT. The magnetic anisotropy that controls the bulk and surface magnetic field response of MBT is found to have contributions from both single-ion and interlayer two-ion terms. A description of the quasi-two-dimensional intralayer FM spin waves requires long-range, competing FM and AFM interactions and anomalous damping. While this might suggest carrier-mediated magnetic coupling, abinitio calculations in insulating MBT also find long-range interactions, and classical spin dynamics simulations suggest that magnetic vacancies are at least partially responsible for observations of anomalous damping near the zone boundary.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Quantum Spin Hall Edge States and Interlayer Coupling in Twisted Bilayer WTe 2

The quantum spin Hall (QSH) effect, characterized by topologically protected spin-polarized edge states, was recently demonstrated in monolayers of the transition metal dichalcogenide (TMD) WTe 2 . However, the robustness of this topological protection remains largely unexplored in van der Waals heterostructures containing one or more layers of a QSH insulator. Here, we use scanning tunneling microscopy and spectroscopy (STM/STS) to explore the topological nature of twisted bilayer (tBL) WTe 2 . Furthermore, at the tBL edges, we observe the characteristic spectroscopic signatures of the QSH edge states. For small twist angles, a rectangular moiré pattern develops, which results in local modifications of the band structure. Using first-principles calculations, we quantify the interactions in tBL WTe 2 and its topological edge states as a function of interlayer distance and conclude that it is possible to engineer the topology of WTe 2 bilayers via the twist angle as well as interlayer interactions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Interlayer Coupling Controlled Ordering and Phases in Polar Vortex Superlattices

The recent discovery of polar topological structures has opened the door for exciting physics and emergent properties. There is, however, little methodology to engineer stability and ordering in these systems, properties of interest for engineering emergent functionalities. Notably, when the surface area is extended to arbitrary thicknesses, the topological polar texture becomes unstable. Here we show that this instability of the phase is due to electrical coupling between successive layers. We demonstrate that this electrical coupling is indicative of an effective screening length in the dielectric, similar to the conductor–ferroelectric interface. Controlling the electrostatics of the superlattice interfaces, the system can be tuned between a pure topological vortex state and a mixed classical-topological phase. This coupling also enables engineering coherency among the vortices, not only tuning the bulk phase diagram but also enabling the emergence of a 3D lattice of polar textures.

3D ordering↗