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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Thin film charged particle detectors

Silicon tracking detectors have grown to cover larger surface areas up to hundreds of square meters, and are even taking over other sub-detectors, such as calorimeters. However, further improvements in tracking detector performance are more likely to arise from the ability to make a low mass detector comprised of a high ratio of active sensor to inactive materials, where dead materials include electrical services, cooling, mechanical supports, etc. In addition, the cost and time to build these detectors is currently large. Therefore, advancements in the fundamental technology of tracking detectors may need to look at a more transformative approach that enables extremely large area coverage with minimal dead material and is easier and faster to build. The advancement of thin film fabrication techniques has the potential to revolutionize the next-to-next generation of particle detector experiments. Some thin film deposition techniques have already been developed and widely used in the industry to make LED screens for TVs and monitors. If large area thin film detectors on the order of several square meters can be fabricated with similar performance as current silicon technologies, they could be used in future particle physics experiments. This paper aims to review the key fundamental performance criteria of existing silicon detectors and past research to use thin films and other semi-conductor materials as particle detectors in order to explore the important considerations and challenges to pursue thin film detectors.

Solid state detectors↗
DOE OSTI2021

Optimization Of In-field Alpha Spectrometry For Uranium Enrichment Determination In Uranium Hexafluoride

In response to needs identified by the International Atomic Energy Agency (IAEA) research is underway to develop In-Field Alpha Spectrometry (IFAS) as a method to allow IAEA safeguards inspectors to collect samples of uranium hexafluoride (UF6) at processing facilities to assess and verify uranium enrichment. For sample collection, the IFAS method uses Single-Use Destructive Assay (SUDA) samplers, which contain thin zeolite coatings that trap UF6 gas and convert it to the safer, more stable form uranyl fluoride (as a dihydrate, UO2F2·2H2O). For alpha spectrometry, the IFAS instrument employs a large area silicon semiconductor transducer to detect and record alpha particle energy-deposition events. Over the past year optimization work has significantly increased the diameter of useful SUDA samples (from 12.7 mm to 48 mm), improved the manufacturability and reproducibility of SUDA samples, increased the area of the IFAS alpha spectrometer sensor from 1.2 cm to 3.1 cm, and improved source positioning within the IFAS. This paper will report on this optimization work, its impacts on IFAS performance, and future plans for IFAS miniaturization, improvements, and testing.

Chichester, David↗
DOE OSTI2021

Optimization of In-Field Alpha Spectrometry for Uranium Enrichment Determination in Uranium Hexafluoride

In response to needs identified by the International Atomic Energy Agency (IAEA) research is underway to develop In-Field Alpha Spectrometry (IFAS) as a method to allow IAEA safeguards inspectors to collect samples of uranium hexafluoride (UF6) at processing facilities to assess and verify uranium enrichment. For sample collection, the IFAS method uses Single-Use Destructive Assay (SUDA) samplers, which contain thin zeolite coatings that trap UF6 gas and convert it to the safer, more stable form uranyl fluoride (UO2F2). For alpha spectrometry, the IFAS instrument employs a large area silicon semiconductor transducer to detect and record alpha particle energy-deposition events. Over the past year optimization work has significantly increased the diameter of useful SUDA samples (from 12.7 mm to 48 mm), improved the manufacturability and reproducibility of SUDA samples, increased the area of the IFAS alpha spectrometer sensor from 1.2 cm to 3.1 cm, and improved source positioning within the IFAS. This paper will report on this optimization work, its impacts on IFAS performance, and future plans for IFAS miniaturization, improvements, and testing.

46 - INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AN↗
DOE OSTI2025

The ATLAS Inner Tracker Strip Detector System for the Phase-II Large Hadron Collider Upgrade

ATLAS is currently preparing for the HL-LHC upgrade, with an all-silicon Inner Tracker (ITk) that will replace the current Inner Detector. The ITk will feature a pixel detector surrounded by a strip detector, with the strip system consisting of four barrel layers and 12 endcap disks. After successful completion of a large-scale prototyping program, final design reviews have been completed in key areas, such as sensors, modules, front-end electronics, and ASICs. We present an overview of the strip system and highlight the final design choices of sensors, modules, and ASICs. We summarize the results achieved during prototyping and the current status of production and pre-production on various detector components, with an emphasis on QA and QC procedures.

Duden, Emily (ORCID:0000000290929344)↗
NASA NTRS1993

Chemical Vapor Deposition Of Silicon Carbide

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Powell, J. Anthony↗
DOE OSTI2024

Setups for eliminating static charge of the ATLAS18 strip sensors

Abstract Construction of the new all-silicon Inner Tracker (ITk), developed by the ATLAS collaboration to beable to track charged particles produced at the High-Luminosity LHC, started in 2020 and is expected tocontinue till 2028. The ITk detector will include 18,000 highly segmented and radiation hard n+-in-psilicon strip sensors (ATLAS18), which are being manufactured by Hamamatsu Photonics. Mechanical and electrical characteristics of produced sensors are measured upon their delivery at several institutes participating in a complex Quality Control (QC) program. The QC tests performed on each individual sensor check the overall integrity and quality of the sensor.During the QC testing of ATLAS18 strip sensors, an increased number of sensors thatfailed the electrical tests was observed. In particular, IV measurements indicated an early breakdown,while large areas containing several tens or hundreds of neighbouring strips with low interstrip isolationwere identified by the Full strip tests, and leakage current instabilities were measured in a long-term leakage current stability setup. Moreover, a high surface electrostatic charge reaching a level of several hundreds of volts per inch was measured on a large number of sensors and on the plastic sheets, whichmechanically protect these sensors in their paper envelopes. Accumulated data indicates a clearcorrelation between observed electrical failures and the sensor charge-up.To mitigate the above-described issues, the QC testing sites significantly modified the sensor handlingprocedures and introduced sensor recovery techniques based on irradiation of the sensor surface with UVlight or application of intensive flows of ionized gas. In this presentation, we will describe the setupsimplemented by the QC testing sites to treat silicon strip sensors affected by static charge andevaluate the effectiveness of these setups in terms of improvement of the sensor performance.

Instruments & Instrumentation↗
DOE OSTI2022

Front-End Design for SiPM-Based Monolithic Neutron Double Scatter Imagers

Neutron double scatter imaging exploits the kinematics of neutron elastic scattering to enable emission imaging of neutron sources. Due to the relatively low coincidence detection efficiency of fast neutrons in organic scintillator arrays, imaging efficiency for double scatter cameras can also be low. One method to realize significant gains in neutron coincidence detection efficiency is to develop neutron double scatter detectors which employ monolithic blocks of organic scintillator, instrumented with photosensor arrays on multiple faces to enable 3D position and multi-interaction time pickoff. Silicon photomultipliers (SiPMs) have several advantageous characteristics for this approach, including high photon detection efficiency (PDE), good single photon time resolution (SPTR), high gain that translates to single photon counting capabilities, and ability to be tiled into large arrays with high packing fraction and photosensitive area fill factor. However, they also have a tradeoff in high uncorrelated and correlated noise rates (dark counts from thermionic emissions and optical photon crosstalk generated during avalanche) which may complicate event positioning algorithms. We have evaluated the noise characteristics and SPTR of Hamamatsu S13360-6075 SiPMs with low noise, fast electronic readout for integration into a monolithic neutron scatter camera prototype. The sensors and electronic readout were implemented in a small-scale prototype detector in order to estimate expected noise performance for a monolithic neutron scatter camera and perform proof-of-concept measurements for scintillation photon counting and three-dimensional event positioning.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Development of a large array of Silicon Drift Detectors for high-rate synchrotron fluorescence spectroscopy

An array of small-area Silicon Drift Detectors (SDD), named Hera, has been developed at Brookhaven National Laboratory (BNL) in the past few years. Its primary application is high-rate spectroscopy at synchrotrons. Each SDD pixel is a 1 mm × 1 mm square to match the footprint of the original diode-based pixel detector called Maia, which was developed for the same application. The replacement of the diode with an SDD allows for better energy resolution at short shaping times and an increased stability of the detector. 32, 96, and 384-channel arrays were designed and fabricated and achieved a Full Width Half Maximum (FWHM) as low as 176 eV at 5.9 keV with peaking time of 1 μs at -13°C. The sensor design, simulation, fabrication, its readout system, and its spectroscopic performance are reported.

47 OTHER INSTRUMENTATION↗
NASA NTRS1998

Carbon Nanotube Based Nano-Electro-Mechanical Systems (NEMS)

Carbon nanotubes (CNT) enable nanoelectromechanical systems (NEMS) because of their inherent nanostructure, intrinsic electric conductivity and mechanical resilience. The collaborative work between Stanford (experiment) and NASA Ames (theory and simulation) has made progress in two types of CNT based NEMS for nanoelectronics and sensor applications. The CNT tipped scanning probe microscopy (SPM) is a NEMS in which CNT tips are used for nanoscale probing, imaging and manipulating. It showed great improvement in probing surfaces and biological systems over conventional tips. We have recently applied it to write (lithography) and read (image) uniform SiO2 lines on large Si surface area at speed up to 0.5 mm per s. Preliminary work using approximately 10 nm multiwall nanotube tips produced approximately 10 nm structures and showed that the CNT tips didn't wear down when crashed as conventional tips often do. This presents a solution to the long standing tip-wear problem in SPM nanolithography. We have also explored potential of CNT tips in imaging DNA in water. Preliminary experiment using 10 nm CNT tips reached 5 nm resolution. The 1 nm nanolithography and 1 nm DNA imaging can be expected by using approximately 1 nm CNT tips. In contrast to CNT tipped SPM, we also fabricated CNT devices on silicon wafer in which CNTs connect patterned metallic lines on SiO2/Si by a simple chemical vapor deposition process. Using conventional lithography for silicon wafer, we have been able to obtain CNT based transistors and sensors. Investigations of the CNT NEMS as physical, biological and chemical sensors are in progress and will be discussed.

Han, Jie↗
NASA NTRS1979

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Fiegl, G.↗
NASA NTRS1979

Charge injection device as a candidate sensor for stellar tracking

Charge transfer devices (CTDs) are superior to the image dissector as stellar tracking sensors, considering their low voltage requirements, insensitivity to magnetic fields, good linearity, and low weight and power. An analysis of one type of CTD, called the charge injection device (CID), revealed an X-Y addressing capability which provides exceptional flexibility in array readout and results in enhanced S/N capability, a surface channel device which produces a larger dynamic range of operation, and exceptional and unique tolerance to optical overloads. A 128 row by 128 column CID array processed on silicon was evaluated in a cooled breadboard camera, and measured results indicate projected performance parameters of a large area CID array as follows: 20 micron square sensing site, noise not greater than 25 carriers per pixel, quantum yield of approximately 40% from 0.4 to 1.0 micron, and cooling requirements on the order of 0 degrees C.

Jones, C. S., Jr.↗
DOE OSTI2026

On-chip probabilistic inference for charged-particle tracking at the sensor edge

Modern scientific instruments operate under increasingly extreme constraints on bandwidth, latency, and power. Inference at the sensor edge determines experimental data collection efficiency by deciding which information to save for further analysis. Particle tracking detectors at the Large Hadron Collider exemplify this challenge: pixelated silicon sensors generate rich spatiotemporal ionization patterns, yet most of this information is discarded due to data-rate limitations. Concurrently, advancements in co-design tools provide rapid turn-around for incorporating machine learning into application-specific integrated circuits, motivating designs for particle detectors with new integrated technologies. We demonstrate that neural networks embedded in the front-end electronics can infer charged-particle kinematic parameters from a single silicon layer. We regress hit positions and incident angles with calibrated uncertainties, while satisfying stringent constraints on numerical precision, latency, and silicon area. Our results establish a path toward probabilistic inference directly at the edge, opening new opportunities for intelligent sensing in high-rate scientific instruments.

Das, Arghya Ranjan [Purdue U.] (ORCID:000000018451↗
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2005

Nanostructure Engineered Chemical Sensors for Hazardous Gas and Vapor Detection

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs) and metal oxides nanowires or nanobelts, on a pair of interdigitated electrodes (IDE) processed with a silicon based microfabrication and micromachining technique. The IDE fingers were fabricated using thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to hazardous gases and vapors, such as acetone, benzene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing in our sensor platform can be understood by electron modulation between the nanostructure engineered device and gas molecules. As a result of the electron modulation, the conductance of nanodevice will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost.

Li, Jing↗
DOE OSTI2022

Investigation of signal characteristics and charge sharing in AC-LGADs with laser and test beam measurements

AC-LGADs, also referred to as resistive silicon detectors, are a recent development of low-gain avalanche detectors (LGADs), based on a sensor design where the multiplication layer and n + contact are continuous, and only the metal layer is patterned. In AC-LGADs, the signal is capacitively coupled from the continuous, resistive n + layer over a dielectric to the metal electrodes. Therefore, the spatial resolution is not only influenced by the electrode pitch, but also the relative size of the metal electrodes. Signal propagation between the metallized areas and charge sharing between electrodes plays a larger role in these detectors than in conventional silicon sensors read out in DC mode. AC-LGADs from two manufacturers were studied in beam tests and with infrared laser scans. The impact of n + layer resistivity and metal electrode pitch on the charge sharing and achievable position resolution is shown. For strips with 100 μm pitch, a resolution of ¡ 5 μm can be reached. Additionally, the charge sharing between neighboring strips is investigated in more detail, indicating the induction of signal charge and subsequent re-sharing over the n + layer. Furthermore, an approach to identify signal sharing over large distances is presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Specifications and pre-production of n + -in-p large-format strip sensors fabricated in 6-inch silicon wafers, ATLAS18, for the Inner Tracker of the ATLAS Detector for High-Luminosity Large Hadron Collider

Abstract The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n + -strips, so-called n + -in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 × 9.8 cm 2 , geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures.

Instruments & Instrumentation↗
NASA NTRS2009

Carbon Nanotube Based Chemical Sensors for Space and Terrestrial Applications

A nanosensor technology has been developed using nanostructures, such as single walled carbon nanotubes (SWNTs), on a pair of interdigitated electrodes (IDE) processed with a silicon-based microfabrication and micromachining technique. The IDE fingers were fabricated using photolithography and thin film metallization techniques. Both in-situ growth of nanostructure materials and casting of the nanostructure dispersions were used to make chemical sensing devices. These sensors have been exposed to nitrogen dioxide, acetone, benzene, nitrotoluene, chlorine, and ammonia in the concentration range of ppm to ppb at room temperature. The electronic molecular sensing of carbon nanotubes in our sensor platform can be understood by intra- and inter-tube electron modulation in terms of charge transfer mechanisms. As a result of the charge transfer, the conductance of p-type or hole-richer SWNTs in air will change. Due to the large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors potentially can offer higher sensitivity, lower power consumption and better robustness than the state-of-the-art systems, which make them more attractive for defense and space applications. Combined with MEMS technology, light weight and compact size sensors can be made in wafer scale with low cost. Additionally, a wireless capability of such a sensor chip can be used for networked mobile and fixed-site detection and warning systems for military bases, facilities and battlefield areas.

Li, Jing↗
DOE OSTI2024

Large Area Transfer of Bismuth‐Based Layered Oxide Thin Films Using a Flexible Polymer Transfer Method

Magnetic and ferroelectric oxide thin films have long been studied for their applications in electronics, optics, and sensors. The properties of these oxide thin films are highly dependent on the film growth quality and conditions. To maximize the film quality, epitaxial oxide thin films are frequently grown on single-crystal oxide substrates such as strontium titanate (SrTiO 3 ) and lanthanum aluminate (LaAlO 3 ) to satisfy lattice matching and minimize defect formation. However, these single-crystal oxide substrates cannot readily be used in practical applications due to their high cost, limited availability, and small wafer sizes. One leading solution to this challenge is film transfer. In this demonstration, a material from a new class of multiferroic oxides is selected, namely bismuth-based layered oxides, for the transfer. A water-soluble sacrificial layer of Sr 3 Al 2 O 6 is inserted between the oxide substrate and the film, enabling the release of the film from the original substrate onto a polymer support layer. The films are transferred onto new substrates of silicon and lithium niobate (LiNbO 3 ) and the polymer layer is removed. These substrates allow for the future design of electronic and optical devices as well as sensors using this new group of multiferroic layered oxide films.

36 MATERIALS SCIENCE↗