RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100)
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Lewis, B. F.↗
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Residual strains from lattice-generated stochastic nonlinear acoustic radiation fields in solids
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Cantrell, John H.↗
Nucleation, growth, and strain relaxation of lattice-mismatched 3-5 semiconductor epitaxial layers
We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111)B GaAs substrates. The InAs epilayer/GaAs substrate combination has been chosen because the lattice-mismatch is severe (approximately 7.2 percent), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites instead of the more common In(x)Ga(1-x)As alloy we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters - susceptor temperature, Thin flux, and AsH3 flux - have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approximately 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer/substrate interface.
Welser, R. E.↗
Nucleation, Growth, and Strain Relaxation of Lattice-Mismatched III-V Semiconductor Epitaxial Layers
We have investigated the early stages of evolution of highly strained 2-D InAs layers and 3-D InAs islands grown by metal-organic chemical vapor deposition (MOCVD) on (100) and (111) B GaAs substrates. The InAs epilayer / GaAs substrate combination has been chosen because the lattice-mismatch is severe (approx. 7.20%), yet these materials are otherwise very similar. By examining InAs-on-GaAs composites Instead of the more common In(x)Ga(1-x)As alloy, we remove an additional degree of freedom (x) and thereby simplify data interpretation. A matrix of experiments is described in which the MOCVD growth parameters -- susceptor temperature, TMIn flux, and AsH3 flux -- have been varied over a wide range. Scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and electron microprobe analysis have been employed to observe the thin film surface morphology. In the case of 3-D growth, we have extracted activation energies and power-dependent exponents that characterize the nucleation process. As a consequence, optimized growth conditions have been identified for depositing approx. 250 A thick (100) and (111)B oriented InAs layers with relatively smooth surfaces. Together with preliminary data on the strain relaxation of these layers, the above results on the evolution of thin InAs films indicate that the (111)B orientation is particularly promising for yielding lattice-mismatched films that are fully relaxed with only misfit dislocations at the epilayer / substrate interface.
Welser, R. E.↗
Dot-in-Well Quantum-Dot Infrared Photodetectors
Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.
Gunapala, Sarath↗
Protein Crystals Grow Purer in Space: Physics of Phenomena
This presentation will summarize the quantitative experimental and theoretical results obtained by B.R. Thomas, P.G. Vekilov, D.C. Carter, A.M. Holmes, W.K. Widierow and the Author, the team with expertise in physics, biochemistry, crystallography and engineering. Impurities inhomogeneously trapped by a growing crystal - e.g., producing sectorial structure and/or striations - may induce macroscopic internal stress in it if an impurity molecule has slightly (less than 10%) different shape or volume than the regular one(s) they replace. We tested for the first time plasticity and measured Young modulus E of the triclinic, not cross-linked lysozyme by triple point bending technique. Triclinic lysozyme crystals are purely elastic with E similar or equal to 1/5 (raised dot) 10 (exp 9) partial derivative yn/sq cm. The strength limit, sigma (sub c) similar or equal to 10 (exp -3)E similar or equal to Epsilon (sub c), where sigma (sub c) and epsilon (sub c) are critical stress and strain, respectively. Scaling E and sigma (sub c) with the lattice spacing suggests similar binding stiffness in inorganic and biomolecular crystals. The inhomogeneous internal stress may be resolved in these brittle crystals either by cracking or by creation of misoriented mosaic blocks during, not after growth. If each impurity molecule induces in the lattice elementary strain epsilon (sub 0) similar or equal to 3 (raised dot) 10 (exp -2) (this is maximal elementary strain that can arise at the supersaturation DELTA mu/kT similar or equal to 2 and macroscopic molecular concentration difference between subsequent macrolayers or growth sectors is partial derivativeC similar or equal to 5 (raised dot) 10 (exp -3), the internal strain epsilon similar or equal to epsilon (sub 0) partial derivative C similar or equal to 10 (exp -4). Mosaic misorientation resolving such strain is approximately 30 arcsec. Tenfold increase of impurity concentration may cause cracking. Estimates of stress in an isometric sectorial crystal show that lysozyme crystals can tolerate the stress till the size of 0.5mm. Dissolving mosaic lysozyme crystal shows that the mosaicity, indeed, is absent below that size.
Chernov, Alex A.↗
Energetics of interstitial molecule formation in alkali halides- Cl2 in NaCl
Interstitial Cl molecule formation in NaCl lattice, computing strain field and energetics by energy minimization technique based on point ion lattice model
Greene, A. C.↗
General method for calculating derivatives of the lattice electrostatic energy.
A method for calculating the derivatives of lattice electrostatic strain energy is proposed. It offers a computation procedure that is more general, concise, and systematic than any of the procedures previously used by Fuchs (1936), Cousins (1967), and Suzuki et al. (1968). The method can also easily be extended to fourth- and higher-order derivatives without undue difficulty.
Macdonald, D. E.↗
Frequency-dependent characteristics and trap studies of lattice-matched (x = 0.53) and strained (x greater than 0.53) In(0.52)Al(0.48)As/In(x)Ga(1-x)As HEMT's
The low-frequency characteristics of InAlAs/In(x)Ga(1-x)As high-electron-mobility transistors (HEMTs) are studied, and trap densities are evaluated. The HEMTs' transconductance g(m) and output resistance R(ds) dispersion are smallest for 60 percent indium (In) content and largest for 53 percent In. The maximum dispersion for the 53 percent In sample is about 6 percent for g(m) and about 13.3 percent for R(ds), corresponding to lower values than observed in MESFETs. The R(ds) dispersion characteristics are weaker than in AlGaAs/GaAs HEMTs and manifest themselves primarily up to 100 kHz. An analysis of the dispersion results indicates that, unlike in the case of MESFETs, the channel region under the gate rather than the access regions is responsible for the dispersion. Interface state densities were extracted by the AC conductance method and were found to follow the same trend as the g(m) and R(ds) dispersion.
Ng, Geok-Ing↗
Quantum well, beam deflecting surface emitting lasers
This invention relates to surface emitting semiconductor lasers (SELs), with integrated 45 deg. beam deflectors. A SEL is formed on a wafer including vertical mirrors and 45 deg. beam deflectors formed in grooves by tilted ion beam etching. A SEL is a lattice matched, or unstrained, AlGaAs/GaAs GRINSCH SQW SEL. An alternate embodiment is shown, in which a SEL is lattice mismatched, strained or pseudomorphic, or InGaAs/AlGaAs GRINSCH SQW SEL which emits radiation at a wavelength to which its substrate is transparent. Both SELs exhibit high output power, low threshold current density, and relatively high efficiency, and each are processing compatible with conventional large scale integration technology. Such SELs may be fabricated in large numbers from single wafers. The novel features of this invention include the use of tilted ion beam etching to form a pair of grooves each including vertical mirrors and 45 deg. beam deflectors. The embodiment provides substantial circuit design flexibility because radiation may be coupled both up and/or down through the substrate.
Kim, Jae H.↗
Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy
This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the "step-free surface heteroepitaxy" process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.
Neudeck, Philip G.↗
Transmission Electron Microscope Measures Lattice Parameters
Convergent-beam microdiffraction (CBM) in thermionic-emission transmission electron microscope (TEM) is technique for measuring lattice parameters of nanometer-sized specimens of crystalline materials. Lattice parameters determined by use of CBM accurate to within few parts in thousand. Technique developed especially for use in quantifying lattice parameters, and thus strains, in epitaxial mismatched-crystal-lattice multilayer structures in multiple-quantum-well and other advanced semiconductor electronic devices. Ability to determine strains in indivdual layers contributes to understanding of novel electronic behaviors of devices.
Pike, William T.↗
Optical Measurement System for Strain Field Ahead of a Crack Tip for Lattice Structures
The aim of the ARAMADAS project is to automate the construction of cuboctahedral lattice structures. Lattice materials are appealing for aerospace applications due to their strength and stiffness at ultra-light densities. However, in order for any material to be realistically considered for such environments, it must also be damage tolerant. The ability of a material to absorb damage is characterized by its fracture toughness, which remains poorly characterized for lattice materials. Consequently, the objective of this research is to develop an optical measurement system to experimentally validate the strain field ahead of a crack tip in architecture lattice materials. Although the ability to predict the strain field ahead of a crack tip has been investigated for continuum materials, such behaviour of three-dimensional architectures is under-investigated. As such, we will use a custom optical measurement system to track deformation of the voxels in a side-cracked plate fracture specimen. The system shall use 3D pose estimation, stereo imaging, and possibly color tracking, in combination with optical flow algorithms, to compute information regarding the three-dimensional movement movement of the lattice nodes during mechanical testing. Bench top experiments will validate the optical measurement system and characterize precision. Additionally, the effect of multiple cameras on precision, as well as system scalability will be investigated. Final results will compare measured lattice deformation with finite element predictions.
Lennig, Miriam↗
Ellipsometric study of Si(0.5)Ge(0.5)/Si strained-layer superlattices
An ellipsometric study of two Si(0.5)Ge(0.5)/Si strained-layer super lattices grown by MBE at low temperature (500 C) is presented, and results are compared with x ray diffraction (XRD) estimates. Excellent agreement is obtained between target values, XRD, and ellipsometry when one of two available Si(x)Ge(1-x) databases is used. It is shown that ellipsometry can be used to nondestructively determine the number of superlattice periods, layer thicknesses, Si(x)Ge(1-x) composition, and oxide thickness without resorting to additional sources of information. It was also noted that we do not observe any strain effect on the E(sub 1) critical point.
Sieg, R. M.↗
Ellipsometric study of InGaAs MODFET material
In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.
Alterovitz, S. A.↗
Crystal regularity with high-resolution synchrotron X-radiation diffraction imaging
New, high-resolution sources of X-radiation such as monochromatic synchrotron radiation beams with subarcsec divergence allow observation of regularities in a range of crystals with sufficient clarity for comprehensive analyses, whose results can deepen understanding of the nature of various crystal irregularities, their sources, and their effects on device performance. An account is presented of the results thus achievable with irregularities encountered in lattice orientation and strain, grain and subgrain boundaries, dislocations, domain boundaries, additional phases, and surface scratches. Significant achievements to date encompass the observation of critical anomalies in lead tin telluride, the reconciliation of disparate observations of GaAs, the determination of the performance effects of irregularities in mercuric iodide, and the characterization of the origins of crystal growth in bismuth silicon oxide.
Steiner, Bruce↗
Method of Generating X-Ray Diffraction Data for Integral Detection of Twin Defects in Super-Hetero-Epitaxial Materials
A method provides X-ray diffraction (XRD) data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symme try belonging to different space groups. The material is mounted in a n X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Omega is set equal to (Theta(sub B)-Beta) where The ta(sub B) is a Bragg angle for a designated crystal plane of the allo y that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and Beta is the angle between the designate d crystal plane and a { 111 } crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (Theta(su b B)+Beta). The material can be rotated through an angle of azimuthal rotation Phi about the axis aligned with the material. Using the det ector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.
Park, Yeonjoon↗
Recent Results from Epitaxial Growth on Step Free 4H-SiC Mesas
This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.
Neudeck, Philip G.↗