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Results for “layered 2D materials”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Evaluating the exfoliation of two-dimensional materials with a Green's function surface model

Previous methods for the evaluation of the exfoliation of two-dimensional (2D) layered materials have drawbacks in computational efficiency and are unable to describe cases with semi-infinite substrates. Based on a Green's function surface (GFS) model, here we develop an approach to efficiently determine the tendency of exfoliation of 2D materials from their bulk crystals or semi-infinite substrates. By constructing appropriate surface configurations, we may calculate the exfoliation energy more precisely and quickly than the traditional way with the slab model. Furthermore, the GFS approach can provide angle-resolved photoemission spectroscopy of surface systems for direct comparison with experimental data. In this work, our findings indicate that the GFS approach is powerful for studies of 2D materials and various surface problems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Develop On-Demand nanoplasmonic Device Concepts in a Semiconductor Compatible Hybrid System. Final Report

This report summarizes the research activities supported by the U.S. Department of Energy grant DE-SC-0010399. The goal of this project is to is to develop an on-demand nanoplasmonic platform that combines emerging oxide nanoelectronics with a low-loss semiconductor-friendly plasmonic materials. Toward this goal, several unique heterostructures formed between complex oxides and 2D layered materials have been developed. Based on these material systems, a set of atomic force microscope (AFM) based techniques have been developed that can allow long-living and reversible material phase transitions to be manipulated in nanoscale at room temperature. Using such technique and through interface coupling, we can effectively tune the plasmon propagations in unconventional plasmonic materials such as graphene and VO 2 . In addition, we also discovered a plethora of novel interface enabled electro-optic effects, including the spatial modulation of light using 2DEG, a giant programmable photothermoelectric effects at room temperature, a light induced superconducting transition, and a tunable giant third order optical nonlinearities. These major results are outlined in this report, along with lists of project participants and products.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX 2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2/MoS2), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. Our results motivate further research in the understanding and applications of defects in 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electrostatic gating and intercalation in 2D materials

The doping or the alteration of crystals with guest species to obtain desired properties has long been a research frontier in materials science. However, the closely packed lattice structure in many crystals has limited the applicability of this strategy. The advent of 2D layered materials has led to revitalized interest in utilizing this approach through two important strategies, gating and intercalation, offering reversible modulation of the properties of the host material without breaking chemical bonds. In addition, these dynamically tunable techniques have enabled the synthesis of new hybrid materials. Here, we review how interactions between guest species and host 2D materials can tune the physics and chemistry of materials and discuss their remarkable potential for creating artificial materials and architectures beyond the reach of conventional methods.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Design of Atomic Ordering in Mo 2 Nb 2 C 3 T x MXenes for Hydrogen Evolution Electrocatalysis

The need for novel materials for energy storage and generation calls for chemical control at the atomic scale in nanomaterials. Ordered double-transition-metal MXenes expanded the chemical diversity of the family of atomically layered 2D materials since their discovery in 2015. However, atomistic tunability of ordered MXenes to achieve ideal composition-property relationships has not been yet possible. In this study, we demonstrate the synthesis of Mo 2+α Nb 2-α AlC 3 MAX phases (0 ≤ α ≤ 0.3) and confirm the preferential ordering behavior of Mo and Nb in the outer and inner M layers, respectively, using density functional theory, Rietveld refinement, and electron microscopy methods. We also synthesize their 2D derivative Mo 2+α Nb 2-α C 3 T x MXenes and exemplify the effect of preferential ordering on their hydrogen evolution reaction electrocatalytic behavior. In conclusion, this study seeks to inspire further exploration of the ordered double-transition-metal MXene family and contribute composition-behavior tools toward application-driven design of 2D materials.

2D materials↗
DOE OSTI2023

Colossal Optical Anisotropy from Atomic-Scale Modulations

Materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g., in wave plates, polarizing beam splitters, etc.), nonlinear optics, micromanipulation, and as a platform for unconventional light–matter coupling, such as hyperbolic phonon polaritons. Layered 2D materials can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optical axis is out of the plane of the layers and the layers are weakly attached. This work demonstrates that a bulk crystal with subtle periodic modulations in its structure—Sr 9/8 TiS 3 —is transparent and positive-uniaxial, with extraordinary index n e = 4.5 and ordinary index n o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS 3 , results in the formation of TiS 6 trigonal-prismatic units that break the chains of face-sharing TiS 6 octahedra in SrTiS 3 into periodic blocks of five TiS 6 octahedral units. The additional electrons introduced by the excess Sr form highly oriented electron clouds, which selectively boost the extraordinary index n e and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

2D material-based layer transfer: Challenges and opportunities

For future of electronics such as bioelectronics, 3D integrated electronics, and bendable electronics, needs for flexibility and stackability of electronic products have substantially grown up. However, conventional wafer-based single-crystalline semiconductors cannot catch up with such trends because they are bound to the thick rigid wafers such that they are neither flexible nor stackable. Although polymer-based organic electronic materials are more compatible as they are mechanically complaint and less costly than inorganic counterparts, their electronic/photonic performance is substantially inferior to that of single-crystalline inorganic materials. For the past few decades, many different strategies to mitigate such performance-mechanical compliance dilemma by developing methods to obtain cheap, flexible, stackable, single-crystalline inorganic systems. In today’s talk, I will discuss about various strategies to realize such a dream electronic system and how these strategies unlock new ways of manufacturing advanced electronic systems. One of the most promising approaches is to fabricate freestanding ultrathin membranes from existing functional material wafers by peeling the active layers from the top. I will overview all freestanding membrane methods and especially dive deeply into 2D materials-based layer transfer (2DLT) technique that has been recently emerging as one of the very promising options. In the 2DLT process, one can produce single-crystalline freestanding membranes from 3D materials by performing remote epitaxy or van der Waals epitaxy on 2D materials followed by peeling active single-crystalline films from the 2D materials. I will discuss about the challenges and opportunities of this technology. In addition, I will present unprecedented artificial heterostructures that can be enabled by stacking those freestanding 3D material membranes.

Kim, Jeehwan↗
DOE OSTI2022

2D Oxides Realized via Confinement Heteroepitaxy

Novel confinement techniques facilitate the formation of non-layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO x , InO x , SnO x ) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO x with non-periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO 2 and bilayer Ga 2 O 3 with ferroelectric wurtzite structure(FE-WZ') can then be formed via subsequent high-temperature O 2 annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga 2 O 3 ) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β-Ga 2 O 3 (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. Furthermore, the study presented here is foundational for development of atomic-scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices.

2D gallium oxides↗
DOE OSTI2026

Lattice-Mismatched van der Waals Epitaxy and Photoluminescence of Two-Dimensional GaxIn1-xSe Alloys on Si(111)

GaxIn1-xSe (GIS) alloys are two-dimensional (2D) layered materials with band gaps and lattice parameters of interest for many energy and electronic applications. They can be fabricated using van der Waals epitaxy, which is an emerging technique that offers unprecedented opportunities for 2D optoelectronic devices and epitaxy processes. This work has demonstrated van der Waals epitaxy of GIS alloys for the first time. Films with x compositions of 0, 0.062, 0.164, 0.680, 0.894, and 1 and tunable lattice constants were grown on Si(111) substrates, and characterized by X-ray diffraction pole figure and transmission electron microscope analysis. In spite of the lattice mismatches (InSe is 4.1% too large and GaSe is 2.8% too small), these alloys grow epitaxially, with Si(111) || GIS(001) and Si[1-10] || GIS[100] orientation. Photoluminescence was used to measure tunable band gaps in the absorber-relevant 1.3-2.0 eV range as a function of x composition and showed GIS did not degrade after capping with Se and prolonged storage. Therefore, GIS alloys exhibit a technologically advantageous combination of tunable band gap and photoluminescence with relaxed lattice parameter and rotational registry with the substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-efficiency and durable optoelectronic devices using layered 2D perovskites

A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.

14 SOLAR ENERGY↗
DOE OSTI2023

Room-Temperature, Current-Induced Magnetization Self-Switching in A Van Der Waals Ferromagnet

2D layered materials with broken inversion symmetry are being extensively pursued as spin source layers to realize high-efficiency magnetic switching. Such low-symmetry layered systems are, however, scarce. In addition, most layered magnets with perpendicular magnetic anisotropy show a low Curie temperature. Here, in this study, the experimental observation of spin–orbit torque magnetization self-switching at room temperature in a layered polar ferromagnetic metal, Fe 2.5 Co 2.5 GeTe 2 is reported. The spin–orbit torque is generated from the broken inversion symmetry along the c-axis of the crystal. These results provide a direct pathway toward applicable 2D spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Physics Discovery in Nanoplasmonic Systems via Autonomous Experiments in Scanning Transmission Electron Microscopy

Abstract Physics‐driven discovery in an autonomous experiment has emerged as a dream application of machine learning in physical sciences. Here, this work develops and experimentally implements a deep kernel learning (DKL) workflow combining the correlative prediction of the target functional response and its uncertainty from the structure, and physics‐based selection of acquisition function, which autonomously guides the navigation of the image space. Compared to classical Bayesian optimization (BO) methods, this approach allows to capture the complex spatial features present in the images of realistic materials, and dynamically learn structure–property relationships. In combination with the flexible scalarizer function that allows to ascribe the degree of physical interest to predicted spectra, this enables physical discovery in automated experiment. Here, this approach is illustrated for nanoplasmonic studies of nanoparticles and experimentally implemented in a truly autonomous fashion for bulk‐ and edge plasmon discovery in MnPS 3 , a lesser‐known beam‐sensitive layered 2D material. This approach is universal, can be directly used as‐is with any specimen, and is expected to be applicable to any probe‐based microscopic techniques including other STEM modalities, scanning probe microscopies, chemical, and optical imaging.

42 ENGINEERING↗
DOE OSTI2022

Moiré engineering in van der Waals heterostructures

Isolated atomic planes can be assembled into a multilayer van der Waals (vdW) heterostructure in a precisely chosen sequence. These heterostructures feature moiré patterns if the constituent 2D material layers are stacked in an incommensurable way, due to a lattice mismatch or twist. This design-by-stacking has opened up the promising area of moiré engineering, a term that can be understood in two different perspectives, namely, (i) structural—engineering a moiré pattern by introducing twist, relative strain, or defects that affect the commensurability of the layers and (ii) functional—exploiting a moiré pattern to find and tune resulting physical properties of a vdW heterostructure. The latter meaning, referring to the application of a moiré pattern, is seen in the literature in the specific context of the observation of correlated electronic states and unconventional superconductivity in twisted bilayer graphene. The former meaning, referring to the design of the moiré pattern itself, is present in the literature but less commonly discussed or less understood. The underlying link between these two perspectives lies in the deformation field of the moiré superlattice. In this Perspective, we describe a path from designing a moiré pattern to employing the moiré pattern to tune physical properties of a vdW heterostructure. We also discuss the concept of moiré engineering in the context of twistronics, strain engineering, and defect engineering in vdW heterostructures. Although twistronics is always associated with moiré superlattices, strain and defect engineering are often not. Here, in this work, we demonstrate how strain and defect engineering can be understood within the context of moiré engineering. Adopting this perspective, we note that moiré engineering creates a compelling opportunity to design and develop multiscale electronic devices.

2D materials↗
DOE OSTI2023

Strain–Activated Stimulated Emission from Multilayer MoSe 2 in a Narrow Operation Window

Herein, photoluminescence (PL) and fluorescence lifetime imaging (FLIM) in multilayer MoSe 2 are studied. Strain-activated stimulated emission via defect levels in multilayer MoSe 2 under laser excitation is observed, for the first time in defects of transition metal dichalcogenides. The stimulated emission is indicated by a threshold behavior of PL emission intensity with respect to laser intensity, strong polarization effects, achieved population inversion with a difference in lifetimes of two competing excited states, and localization of the stimulated emission zone as observed in FLIM. Here, the presented results not only demonstrate strain-activated stimulated emission and highlight the necessity of strain engineering in tailoring 2D layered materials for optoelectronic applications, but also shed light on the design of stimulated emission in transition metal dichalcogenide's defects to tailor for potential single-photon emission behavior.

enhanced emission↗
DOE OSTI2021

Electronic Structure and Stacking Arrangement of Tungsten Disulfide at the Gold Contact

There is an intensive effort to control the nature of attractive interactions between ultrathin semiconductors and metals and to understand its impact on the electronic properties at the junction. In this work, we present a photoelectron spectroscopy study on the interface between WS 2 films and gold, with a focus on the occupied electronic states near the Brillouin zone center (i.e., the Γ point). To delineate the spectra of WS 2 supported on crystalline Au from the suspended WS 2 , we employ a microscopy approach and a tailored sample structure, in which the WS 2 /Au junction forms a semi-epitaxial relationship and is adjacent to suspended WS 2 regions. The photoelectron spectra, as a function of WS 2 thickness, display the expected splitting of the highest occupied states at the Γ point. In multilayer WS 2 , we discovered variations in the electronic states that spatially align with the crystalline grains of underlying Au. Corroborated by density functional theory calculations, we attribute the electronic structure variations to stacking variations within the WS 2 films. We propose that strong interactions exerted by Au grains cause slippage of the interfacing WS 2 layer with respect to the rest of the WS 2 film. Our findings illustrate that the electronic properties of transition metal dichalcogenides, and more generally 2D layered materials, are physically altered by the interactions with the interfacing materials, in addition to the electron screening and defects that have been widely considered.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Pressure-induced suppression of charge density phases across the entire rare-earth tritellurides by optical spectroscopy

The rare-earth tritellurides (RTe 3 ) are a distinct class of 2D layered materials that recently gained significant attention due to hosting such quantum collective phenomena as superconductivity or charge density waves (CDWs). Many members of this van der Waals (vdW) family crystals exhibit CDW behavior at room temperature, i.e., RTe 3 compound where R = La, Ce, Pr, Nd, Sm, Gd, and Tb. Here, our systematic studies establish the CDW properties of RTe 3 when the vdW spacing/interaction strength between adjacent RTe 3 layers is engineered under extreme hydrostatic pressures. Using a non-destructive spectroscopy technique, pressure-dependent Raman studies first establish the pressure coefficients of phonon and CDW amplitude modes for a variety of RTe 3 materials, including LaTe 3 , CeTe 3 , PrTe 3 , NdTe 3 , SmTe 3 , GdTe 3 , and TbTe 3 . Results further show that the CDW phase is eventually suppressed at high pressures when the interlayer spacing is reduced and interaction strength is increased. Comparison between different RTe 3 materials shows that LaTe 3 with the largest thermodynamic equilibrium interlayer spacing (smallest chemical pressure) exhibits the most stable CDW phases at high pressures. In contrast, CDW phases in late RTe 3 systems with the largest internal chemical pressures are suppressed easily with applied pressure. Overall results provide comprehensive insights into the CDW response of the entire RTe 3 series under extreme pressures, offering an understanding of CDW formation/engineering in a unique class of vdW RTe 3 material systems.

36 MATERIALS SCIENCE↗