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Etch Profile Simulation Using Level Set Methods

Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

Hwang, Helen H.↗

Two-phase Flow Regime Transition Study using Level-Set Method

In Boiling Water Reactors (BWRs) the coolant exiting the core often has void fractions as high as 50%, resulting in high gas volume fraction two-phase flow regimes, such as annular or churn-turbulent flow. As the coolant boils along the subchannels it will experience flow regime transitions from bubbly to slug, slug to churn, and, finally, churn to annular. While these transition points are known to occur as a higher void develops along the flow path, the driving physics of the transition phenomenon is not well understood. Currently, experiment based correlations are the most reliable method for predicting where in the core the flow regime transitions will occur. However, experimentally, it's ever difficult to observe the details of the two-phase flow at prototypical pressures/temperatures, or, as with high fidelity experiments, the conditions differ from those in a reactor. Being able to predict these flow regime transitions is critical to safe and efficient reactor operations as well as maintaining fuel rod integrity by avoiding dryout. The characterization of flow regimes has been extensively studied, producing a wide set of flow regime maps based on characteristic parameters such as vapor and liquid superficial velocity, time dependent pressure drop, interfacial area density, etc. While these studies are useful in predicting the flow regime for certain geometry and flow conditions, they do not provide a universal predictive capability for any geometry under any conditions. Additionally, it is difficult to achieve reactor realistic pressure and temperature conditions in experiments. Direct Numerical Simulation (DNS) coupled with Interface Tracking Methods (ITMs) becomes advantageous in this case because the simulations are not limited by the material properties or to the real world conditions. DNS allows for analysis of flows that would be impossible to achieve, or observe in detail, experimentally. The finite element based DNS code, PHASTA (parallel, hierarchic, higher-order accurate, adaptive, stabilized transient analysis flow solver), used in this work utilizes the level set ITM and has been previously shown to properly resolve bubbly, slug, and annular flows, but not transitions between the two-phase flow regimes. The present work uses PHASTA to analyze flow in a pipe for various void fractions and superficial velocities. Flow regime transitions were induced to demonstrate the transient behavior of this phenomenon. With the unique advanced analysis capabilities developed in PHASTA that allow for individual bubble tracking, it becomes possible to extract new localized information about the flow behavior that is currently not attainable from experiments. The potential of this capability is to uncover the underlying physics of the flow regime transition phenomenon. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗