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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

High Order Anchoring and Reinitialization of Level Set Function for Simulating Interface Motion

A second order interface anchoring method has been developed and used with fast sweeping algorithm for reinitialization of a level set function. The algebraic anchoring formulation ensures that the location of the actual interface is preserved, leading to better mass conservation property. It also provides high order accurate algebraic constraint for solving the Eikonal equation on a finite difference grid. Geometric properties of the interface such as surface normal and curvature are subsequently computed from the reinitialized distance function. Various analytical functions for modeling distortion in level set field are considered and accuracy of reinitialization is evaluated using first and second order anchoring schemes. It is also shown that accurate computation of interface curvature requires a high order anchor in addition to a high order fast sweeping method. Mass conservation property of reinitialization is also analyzed by considering test problems from literature including the classic Rider–Kothe single vortex problem. The formulation is suitable for efficient parallelization for both distributed memory and on-node shared memory parallel systems. In conclusion, scalability and performance of the reinitialization scheme on multiple architectures are demonstrated.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Two Dimensional Topology Optimization of Heat Exchangers with the Density and Level-Set Methods

We design heat exchangers using two topology optimization approaches: the density, i.e. volume fraction and level set methods. Our goal is to maximize the heat exchange between two fluids in separate channels while constraining the pressure drop across each channel. The heat exchanger is modeled with a coupled thermal-flow formulation. The flow is governed by an isothermal and incompressible Stokes-Brinkman equation and the heat transfer is governed by a convection-diffusion equation with high Peclet number. We solve one set of Stokes-Brinkman equations per fluid. Each Brinkman term in the flow equation serves to model the other phase as a solid, thereby preventing mixing. We first represent the solid and fluid phases using a volume fraction variable and apply a SIMP-like penalization in the Brinkman term to drive the optimization to a discrete design. The cost and constraint function derivatives are automatically calculated with the library pyadjoint and the optimization is performed by the Method of Moving Asymptotes. In a second optimization formulation, we use the level set approach to define the interface that separates the two fluids. Pyadjoint calculates the shape derivatives of the cost and constraint functions and the Hamilton-Jacobi advects the interface, allowing for topological changes. We present results in two dimensions and discuss the advantages and disadvantages of each approach.

42 ENGINEERING↗
DOE OSTI2026

An efficient level set method for tracking many materials

Here, we present an efficient level set method to track an arbitrary number of materials. The algorithm is optimal in the sense that it only needs to store a single unsigned distance-like function and a single integer indicator function, independent of the number of materials or distinct regions being tracked. Furthermore, for smooth velocity fields and smooth interface shape, arbitrarily high order solutions can be demonstrated. For interfaces that are or become kinked, the solution is limited to second-order convergence rates in the L 1 norm and first-order in the L ∞ norm.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2006

Numerical Schemes for the Hamilton-Jacobi and Level Set Equations on Triangulated Domains

Borrowing from techniques developed for conservation law equations, we have developed both monotone and higher order accurate numerical schemes which discretize the Hamilton-Jacobi and level set equations on triangulated domains. The use of unstructured meshes containing triangles (2D) and tetrahedra (3D) easily accommodates mesh adaptation to resolve disparate level set feature scales with a minimal number of solution unknowns. The minisymposium talk will discuss these algorithmic developments and present sample calculations using our adaptive triangulation algorithm applied to various moving interface problems such as etching, deposition, and curvature flow.

Barth, Timothy J.↗
DOE OSTI2020

Level set topology optimization in Firedrake

Lestofire is an academic software for the automated design of engineering components. It finds the optimal geometry of a system to minimize a given cost function while constrained by a given set of physics equations. Using a level set function to describe the geometry, lestofire uses shapes derivative to evolve the system until its optimal shape. It leverages the compilation of variational forms in Firedrake (https://www.firedrakeproject.org/) and the automated calculation of shape derivatives via pyadjoint (http://www.dolfin-adjoint.or/en/latest/) to allow fast prototyping of different physics, cost functions and design parametrizations.

Salazar De Troya, Miguel↗
NASA NTRS1998

Simulation of Etching Profiles Using Level Sets

Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)

Hwang, Helen↗
NASA NTRS1997

Etch Profile Simulation Using Level Set Methods

Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

Hwang, Helen H.↗
NASA NTRS1998

Profile Evolution Simulation in Etching Systems Using Level Set Methods

Semiconductor device profiles are determined by the characteristics of both etching and deposition processes. In particular, a highly anisotropic etch is required to achieve vertical sidewalls. However, etching is comprised of both anisotropic and isotropic components, due to ion and neutral fluxes, respectively. In Ar/Cl2 plasmas, for example, neutral chlorine reacts with the Si surfaces to form silicon chlorides. These compounds are then removed by the impinging ion fluxes. Hence the directionality of the ions (and thus the ion angular distribution function, or IAD), as well as the relative fluxes of neutrals and ions determines the amount of undercutting. One method of modeling device profile evolution is to simulate the moving solid-gas interface between the semiconductor and the plasma as a string of nodes. The velocity of each node is calculated and then the nodes are advanced accordingly. Although this technique appears to be relatively straightforward, extensive looping schemes are required at the profile corners. An alternate method is to use level set theory, which involves embedding the location of the interface in a field variable. The normal speed is calculated at each mesh point, and the field variable is updated. The profile comers are more accurately modeled as the need for looping algorithms is eliminated. The model we have developed is a 2-D Level Set Profile Evolution Simulation (LSPES). The LSPES calculates etch rates of a substrate in low pressure plasmas due to the incident ion and neutral fluxes. For a Si substrate in an Ar/C12 gas mixture, for example, the predictions of the LSPES are identical to those from a string evolution model for high neutral fluxes and two different ion angular distributions.(2) In the figure shown, the relative neutral to ion flux in the bulk plasma is 100 to 1. For a moderately isotropic ion angular distribution function as shown in the cases in the left hand column, both the LSPES (top row) and rude's string method (bottom row) predict tapered profiles. The LSPES uses an AD with a FWHM = 13.5 degrees, and rude's model uses a ratio of sheath voltage to ion temperature of 50. The more anisotropic IADs produce profiles with more vertical sidewalls and a wider bottom surface, as shown in the right hand column. Here, the LSPES has an AD with a FWHM = 2 degrees, and rude's model uses a ratio of 500 of sheath voltage to ion temperature. The agreement between the LSPES and rude's model is excellent in both cases. We will present etching profiles generated by the LSPES, including calculations of the re-emitted fluxes of both neutrals and ions off of the profile walls. In addition, we will show the effect of geometric structures (overhangs, etc.) on the etching profiles. Other physical aspects, such as surface diffusion, will also be included in the model.

Hwang, Helen H.↗
DOE OSTI2017

Coalescence Prevention Algorithm for Level Set Method

An algorithm to prevent or delay bubble coalescence for the level set (LS) method is presented. This novel algorithm uses the LS method field to detect when bubbles are in close proximity, indicating a potential coalescence event, and applies a repellent force to simulate the unresolved liquid drainage force. The model is introduced by locally modifying the surface tension force near the liquid film drainage area. The algorithm can also simulate the liquid drainage time of the thin film by controlling the length of time the increased surface tension has been applied. Thus, a new method of modeling bubble coalescence has been developed. Several test cases were designed to demonstrate the capabilities of the algorithm. The simulations, including a mesh study, confirmed the abilities to identify and prevent coalescence as well as implement the time tracking portion, with an additional 10–25% computational cost. Ongoing tests aim to verify the algorithm's functionality for simulations with different flow conditions, a ranging number of bubbles, and both structured and unstructured computational mesh types. Specifically, a bubble rising toward a free surface provides a test of performance and demonstrates the ability to consistently prevent coalescence. In addition, a two bubble case and a seven bubble case provide a more complex demonstration of how the algorithm performs for larger simulations. These cases are compared to much more expensive simulations capable of resolving the liquid film drainage (through very high local mesh resolution) to investigate how the algorithm replicates the liquid film drainage process.

Engineering↗
DOE OSTI2017

Functional level-set derivative for a polymer self consistent field theory Hamiltonian

We derive functional level-set derivatives for the Hamiltonian arising in self-consistent field theory, which are required to solve free boundary problems in the self-assembly of polymeric systems such as block copolymer melts. In particular, we consider Dirichlet, Neumann and Robin boundary conditions. We provide numerical examples that illustrate how these shape derivatives can be used to find equilibrium and metastable structures of block copolymer melts with a free surface in both two and three spatial dimensions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2019

Level Set Topology Optimization of Load Carrying Heat Dissipation Devices

In this paper, we introduce a level set method topology optimization method of structures subjected to coupled mechanical and thermal loads. Different examples considering compliance minimization and stress minimization under temperature and volume constraints, and mass minimization under stress and temperature constraints, are presented. The p-norm of the stress field and temperature field is used to approximate the maximum stress and temperature, respectively. The developed method is applied in the design of an L-bracket and a battery package. The results show that designs obtained by ignoring the thermal or structural constraints can result in high values of temperature or stress, respectively.

Kambampati, Sandilya↗
DOE OSTI2022

A level set approach for the computational study of a yield stress fluid filling a thin mold

Many important engineering and scientific applications such as cement slurries, foams, crude oil, and granular avalanches involve the concept of yield stress. Therefore, modeling yield stress fluids in different flow configurations, including the accurate prediction of the yield surface, is important. In this paper, we present a computational model based on the finite element method to study the flow of yield stress fluids in a thin mold and compare the results with data from flow visualization experiments. Here, we use the level set method to describe the interface between the filling fluid and air. We use polypropylene glycol as a model Newtonian fluid and Carbopol for the model yield stress fluid, as the Carbopol solution demonstrates yielding without thixotropy. To describe the yielding and shear-thinning behavior, we use a generalized Newtonian constitutive equation with a Bingham–Carreau–Yasuda form. We compare the results obtained from the mold filling experiments with the results from the three-dimensional (3D) model and from a reduced-order Hele-Shaw (HS) model that is two-dimensional, including the effect of shear-thinning along the thin direction only approximately. We show that both the 3D and the HS model can capture the experimental meniscus shape reasonably well for all the fluids considered at three different flow rates. This indicates that the shape evolution is insensitive to the dimensionality of the model. However, the viscosity and yield surfaces predicted by the 3D and HS models are different. The HS model underestimates the high viscosity and unyielded regions compared to the estimation by the 3D model.

42 ENGINEERING↗
NASA NTRS1997

Numerical Schemes for the Hamilton-Jacobi and Level Set Equations on Triangulated Domains

Borrowing from techniques developed for conservation law equations, numerical schemes which discretize the Hamilton-Jacobi (H-J), level set, and Eikonal equations on triangulated domains are presented. The first scheme is a provably monotone discretization for certain forms of the H-J equations. Unfortunately, the basic scheme lacks proper Lipschitz continuity of the numerical Hamiltonian. By employing a virtual edge flipping technique, Lipschitz continuity of the numerical flux is restored on acute triangulations. Next, schemes are introduced and developed based on the weaker concept of positive coefficient approximations for homogeneous Hamiltonians. These schemes possess a discrete maximum principle on arbitrary triangulations and naturally exhibit proper Lipschitz continuity of the numerical Hamiltonian. Finally, a class of Petrov-Galerkin approximations are considered. These schemes are stabilized via a least-squares bilinear form. The Petrov-Galerkin schemes do not possess a discrete maximum principle but generalize to high order accuracy.

Barth, Timothy J.↗
DOE OSTI2017

Stochastic level-set method for shape optimisation

We present a new method for stochastic shape optimisation of engineering structures. The method generalises an existing deterministic scheme, in which the structure is represented and evolved by a level-set method coupled with mathematical programming. The stochastic element of the algorithm is built on the methods of statistical mechanics and is designed so that the system explores a Boltzmann–Gibbs distribution of structures. In non-convex optimisation problems, the deterministic algorithm can get trapped in local optima: the stochastic generalisation enables sampling of multiple local optima, which aids the search for the globally-optimal structure. The method is demonstrated for several simple geometrical problems, and a proof-of-principle calculation is shown for a simple engineering structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Data-Driven Computation of Probabilistic Marching Cubes for Efficient Visualization of Level-Set Uncertainty

Uncertainty visualization is an important emerging research area. Being able to visualize data uncertainty can help scientists improve trust in analysis and decision-making. However, visualizing uncertainty can add computational overhead, which can hinder the efficiency of analysis. In this paper, we propose novel data-driven techniques to reduce the computational requirements of the probabilistic marching cubes (PMC) algorithm. PMC is an uncertainty visualization technique that studies how uncertainty in data affects level-set positions. However, the algorithm relies on expensive Monte Carlo (MC) sampling for the multivariate Gaussian uncertainty model because no closed-form solution exists for the integration of multivariate Gaussian. In this work, we propose the eigenvalue decomposition and adaptive probability model techniques that reduce the amount of MC sampling in the original PMC algorithm and hence speed up the computations. Our proposed methods produce results that show negligible differences compared with the original PMC algorithm demonstrated through metrics, including root mean squared error, maximum error, and difference images. We demonstrate the performance and accuracy evaluations of our data-driven methods through experiments on synthetic and real datasets.

Athawale, Tushar↗
DOE OSTI2019

Level-set Modeling Simulations of Chemical Vapor Infiltration for Ceramic Matrix Composites Manufacturing

Silicon-carbide (SiC) reinforced ceramic matrix composites (CMCs) are a key enabling technology to reduce fuel consumption and emissions of gas turbine engines. In one manufacturing approach, chemical vapor infiltration (CVI) is limited to only coating SiC fibers. The preform is then fabricated using a lay-up of basic plys or 2-D woven sheets composed of the precoated fibers. At the other extreme, CVI is used to completely densify a 3-D woven preform shaped almost like the gas turbine component itself. The latter approach is more suitable for highly engineered components which sit directly in the gas path of the engine, for example, a high pressure turbine blade. In this case, the geometry is necessarily complex for aerodynamic, stress, and lifing (multi-physics) requirements. Presently, optimizing the CVI-dominated manufacturing approach is largely by trial-and-error. In this work, a first-principles modeling of CVI is performed to realize optimization of SiC/SiC CMC manufacturing. The modeling is based on a level-set framework to describe the interface between the vapor and solid phases. A finite-difference numerical scheme using an immersed boundary method is developed for fixed, structured meshes. Massively parallel direct numerical simulations (DNS) of CVI through fiber-woven geometries are performed using one-step chemistry, and over a range of Thiele moduli. Illustrative applications of the resulting large DNS data sets are given, including the development of fiber-weave specific infiltration models and structure functions for mean-field (porous media) Computational Fluid Dynamics (CFD) simulations of CVI.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Measuring the Error in Approximating the Sub-Level Set Topology of Sampled Scalar Data

This paper studies here the influence of the definition of neighborhoods and methods used for creating point connectivity on topological analysis of scalar functions. It is assumed that a scalar function is known only at a finite set of points with associated function values. In order to utilize topological approaches to analyze the scalar-valued point set, it is necessary to choose point neighborhoods and, usually, point connectivity to meaningfully determine critical-point behavior for the point set. Two distances are used to measure the difference in topology when different point neighborhoods and means to define connectivity are used: (i) the bottleneck distance for persistence diagrams and (ii) the distance between merge trees. Usually, these distances define how different scalar functions are with respect to their topology. These measures, when properly adapted to point sets coupled with a definition of neighborhood and connectivity, make it possible to understand how topological characteristics depend on connectivity. Noise is another aspect considered. Five types of neighborhoods and connectivity are discussed: (i) the Delaunay triangulation; (ii) the relative neighborhood graph; (iii) the Gabriel graph; (iv) the k-nearest-neighbor (KNN) neighborhood; and (v) the Vietoris–Rips complex. It is discussed in detail how topological characterizations depend on the chosen connectivity.

97 MATHEMATICS AND COMPUTING↗