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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Synergetic Effect of Aluminum Oxide and Organic Halide Salts on Two‐Dimensional Perovskite Layer Formation and Stability Enhancement of Perovskite Solar Cells

Long-chain organic halide salts are widely used in perovskite-based optoelectronic devices for surface passivation owing to their capability to interact with the surface defects of perovskites. Here, aluminum oxide (AlO x ) is introduced via atomic layer deposition onto octylammonium iodide (OAI) to exploit the benefits of organic halide salts without generating undesired defects. The devices incorporating AlO x on OAI-treated perovskite (OAI/AlO x ) show enhancement in both device performance and photo-stability compared to those with only treatment. A diffusion of aluminum from AlO x into the perovskite through surface characterization contributes to a uniform photo-generated carrier transport in both the surface and the bulk of the perovskite absorber. In addition, it is revealed that light-induced two-dimensional perovskite formation on OAI/AlO x . This may be ascribed to preventing the loss of OA cations due to the presence of AlO x , leading to a decrease in the number of iodine anions which suppresses the light-induced degradation of corresponding devices. Consequently, the devices show over 24% efficiency and retain their efficiency over 1000 hours under continuous light illumination.

14 SOLAR ENERGY↗
DOE OSTI2021

Influence of the Bulk Resistivity on Silicon Heterojunction Solar Cells and Module Reliability

Recent developments in industry on surface passivation open the possibility of using less doped substrates in silicon solar cells. In this report we investigate how the bulk resistivity affects the performance of silicon cells and the reliability of modules. Herein, n- and p-type silicon heterojunction cells with bulk resistivities between 3 and 15 000 Ωcm are studied. We measure the current–voltage characteristics of n-type cells across the resistivity range, and we find comparable responses to illumination intensities between 0.1 and 1 suns. The cells with bulk resistivities over 1000 Ωcm show breakdown voltages larger than -1000 V, almost two orders of magnitude higher than in typical commercial cells. Although modules have bypass-diodes to prevent cells from going into breakdown, higher breakdown voltages can improve the reliability of modules in case of bypass-diode failure and reduce the module cost by easing the number of bypass-diodes required. Finally, the cells have been submitted to light soaking. The float-zone p-type cells with bulk resistivities over 10 000 Ωcm are less sensitive to light-induced degradation than cells with bulk resistivities below 10 Ωcm. The former show to recover few hours after light soaking, while the latter recover only after dark annealing.

14 SOLAR ENERGY↗
DOE OSTI2024

In-Situ Luminescence Imaging of Perovskite Solar Cells Demonstrates Increasing Spatial Nonuniformity Upon Light-Soaking Degradation

In this work we investigate degradation rates of triplecation mixed-halide perovskite p-i-n solar cells. We present an accelerated stress testing procedure using periodic blue light-soaking at elevated temperatures until devices reach ~80% of their initial efficiency. We track light-induced degradation via in-situ: photoluminescence (PL), current-voltage (I-V) curves, and transient photovoltage. Devices underwent 165 hours of light bias at 65degrees C. Results suggest that spatial uniformity in PL intensity decreases as device degradation increases. This investigation lays the groundwork to address the current gap in understanding the interplay between device performance and the evolution of macroscopic features in perovskite solar cells. Thus, we believe spatial characterization techniques will play a crucial role in the commercialization of perovskite solar cells.

imaging↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2022

PV Lifetime Project (2021 NREL Annual Report)

DOE's PV Lifetime project was initiated in 2016 with the goal of accurately characterizing the early-life evolution of photovoltaic (PV) field performance. Different PV cell and module technologies result in different initial performance loss rates due to effects like light-induced degradation (LID) and light & elevated temperature-induced degradation (LeTID). To accurately characterize the initial field performance loss requires the use of high-accuracy indoor IV curve measurements at standard test conditions. Therefore, PV modules involved in this study are removed from the field once or twice per year and brought indoors for measurement. Current samples deployed and monitored in this way include Jinko Solar (2016), Trina Solar (2016), Hanwha Q-Cells (2017), Panasonic (2018), LG (2018), Canadian Solar (2018), Mission Solar (2019). More recently, modules from Sunpreme (2019), and LONGi (2020) have been deployed but not yet analyzed. Overall annual performance loss rates are as follows: our first modules to be deployed (Jinko and Trina) have annual median performance loss rate between -0.4%/yr and -0.9%/yr, mainly concentrated in the first year. The QCells mono-PERC and multi-PERC modules have an annual degradation rate of -0.76%/yr and -0.69%/yr respectively, also concentrated in the first year of operation. Panasonic and LG modules displayed negligible performance loss in the past two years, at 0.1%/yr and -0.0%/yr respectively. They also were the only modules with initial IV curve measurements consistently above the nameplate rating. Possibly relatedly, these are also the only two N-type silicon module types analyzed so far. Canadian Solar multi-PERC modules demonstrated a -1.3%/yr degradation rate which actually accelerated in the past year, so this will be a module type to monitor in future years. Mission Solar modules exhibited strong recoverable performance loss, consistent with LeTID susceptibility. (The same is true for the Jinko JKM260 module type). Annual performance loss actually showed improvement in time at +0.3%/yr after 2 years in the field, although the module initially was measured at 3% below nameplate rating. These modules could therefore be experiencing a form of post-LeTID recovery. Initial measurements have been conducted on the next two module types - Sunpreme n-HIT and LONGi bifacial mono-PERC. We will report on initial year-1 performance change for these modules in the next PV Lifetime annual report. For the remaining modules, an additional year of field exposure will provide greater certainty in annual degradation rates, particularly for those with degradation concentrated in the initial year of field deployment.

14 SOLAR ENERGY↗
DOE OSTI2022

Hydrogen Transport from Dielectrics to poly-Si/SiOx Passivating Contacts Measured by Mass Spectrometry and Vibrational Spectroscopy

We demonstrate the relationship between Si solar cell passivation and hydrogen content of various passivating films, including hydrogenated amorphous silicon (a-Si:H), aluminum oxide (Al2O3), silicon nitride (SiNx) and combinations thereof. Through isotopic studies using quadrupole mass spectrometry (QMS), Fourier transform infrared spectroscopy (FTIR), and Raman spectroscopy, we determine how hydrogen content and stability within each type of film relates to final passivation quality of solar cell test structures. Si solar cells using polycrystalline silicon on silicon oxide (poly-Si/SiOx) passivating contacts are at the forefront of Si solar cell research and emerging as top performers within industrial production. Performance of passivating contact Si solar cells is largely determined by a parameter known as the open-circuit voltage Voc, which directly relates to material quality within the bulk of the device and at surfaces. High Voc is achieved when defects within the bulk crystalline silicon (c-Si) and at interfaces are passivated, preventing them from acting as charge carrier recombination centers. One of the most important means of passivating defects within Si solar cells is via hydrogenation, injecting the cells with large amounts of H to satisfy dangling bonds in the bulk and at interfaces. Hydrogen is especially important in deactivating a prevalent defect in industrial p-type devices which leads to decreased device performance over long-term exposure to light, called light-induced degradation (LID). Some of the most common materials used to supply H to devices are a-Si:H, Al2O3, and SiNx, which can contain very large amounts of H. Upon annealing at elevated temperatures, the hydrogen becomes mobile enough to find and disable defect sites. However, too much hydrogen can also be problematic, sometimes leading to an effect called light and elevated temperature induced degradation (LeTID). It has been shown that these films passivate the interfaces of poly-Si passivating contacts differently, leading to differing performance. Though Al2O3 is a well-defined dielectric material, SiNx can have many different values of x depending on precursor gases and deposition conditions. We observe different FTIR and Raman spectra from different SiNx over a range of x values films to determine the bonding environments within them and further correlate the relative concentrations of Si, N, and H to the stability of H within SiNx and the passivation performance of each film. Because deuterium is chemically identical to hydrogen within these systems, but gives different signals in FTIR and Raman spectroscopy as well as in QMS, isotopic substitution can be used as an excellent tool to probe the H within films. In addition to measuring the H and D bonding within films using FTIR and Raman spectroscopy, we will use such isotopic experiments to observe H and D movement out of these hydrogenating films at elevated temperatures using QMS to determine the stability of H bonding within such systems. With these films characterized based on elemental composition, we will relate such measurements to passivation quality of these films and combinations thereof on poly-Si/SiOx contact structures using quasi-steady state photoconductance decay measurements to obtain implied open-circuit voltage (iVoc) and saturation current density J0 values. Such investigations into the performance of different passivating films and film stacks will lead to greater understanding of dielectrics in semiconductor devices, further improvements in passivated contact design, and eventually, greater proliferation of renewable solar energy worldwide.

Al2O3↗
DOE OSTI2023

Understanding Microscopic Mechanisms of LeTID and LID and their Unifying Features by Electron Paramagnetic Resonance

LID degradation involves not only creation of ~ 10^12 cm^-3 recombination centers, but also ~ 10^16 cm^-3 shallow negative-U traps. In Ga-doped Si, LID EPR defects don't appear, but some traps are still created. LeTID: Si DB and H-hyperfine EPR signatures. We postulate that the defect responsible for LeTID is a partially hydrogenated (multivacancy) with a Si dangling bond and H in the vicinity. O involvement is possible yet unclear. We prove that H is related to the structure of the LeTID defect with isotope experiments and its EPR signal is comparable and linear with the Si DB signal upon LeTID degradation. Working on simulating these results with DFT to obtain more detailed defect structure.

Cz Si↗
DOE OSTI2021

Atomic structure of light-induced efficiency-degrading defects in boron-doped Czochralski silicon solar cells

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime of boron-doped Cz Si decreases upon exposure to light due to B–O-related defects, which reduce the performance of ~10 9 solar modules worldwide. Using electron paramagnetic resonance (EPR), we have identified the spin-active paramagnetic signatures of this phenomenon and gained insights into its microscopic mechanism. We found a distinct defect signature, which diminished when the degraded sample was annealed. The second signature, a broad magnetic field spectrum, due to the unionized B acceptors, was present in the annealed state but vanished upon light exposure. These observations show that, on degradation, nearly all the ~10 16 cm –3 B atoms in Cz Si complexed with interstitial O atoms, whereas only ~10 12 cm –3 of these complexes created defects that were recombination-active. The formation rate of these recombination-active defects correlated with the decay of the minority carrier lifetime. Furthermore, the line shape parameters linked these defects to both B and O impurities in Cz Si.

14 SOLAR ENERGY↗
DOE OSTI2021

Electron Paramagentic Resonance Investigation of Mechanism of Light- and Elevated-Temperature-Induced Degradation in Ga-doped Cz Si

We report on the electron paramagnetic resonance (EPR) spectra recorded at 6 K for Ga-doped Czochralski (Cz) Si in the initial stages of light- and elevated-temperature-induced degradation (LeTID). We show that the narrow-range EPR spectrum depends on the duration of simultaneous heat and light exposure. After prolonged LeTID, the EPR intensity increases at ~334 mT. The EPR signature at ~334 mT is characteristic of Si dangling bonds, and the increase in the dangling bond density can be attributed to the bulk and not the surface. Additionally, we show that the inverse of the minority carrier lifetime in Ga-doped Cz Si samples, measured by quasi-steady-state photoconductance (QSSPC) decay, correlates with the increase in the intensity of the Si dangling bond signal measured by EPR. Based on these observations, we put forth a hypothesis connecting H to LeTID and the corresponding defect structure.

Cz Si↗
DOE OSTI2022

Co-flow injection for serial crystallography at X-ray free-electron lasers

Serial femtosecond crystallography (SFX) is a powerful technique that exploits X-ray free-electron lasers to determine the structure of macromolecules at room temperature. Despite the impressive exposition of structural details with this novel crystallographic approach, the methods currently available to introduce crystals into the path of the X-ray beam sometimes exhibit serious drawbacks. Samples requiring liquid injection of crystal slurries consume large quantities of crystals (at times up to a gram of protein per data set), may not be compatible with vacuum configurations on beamlines or provide a high background due to additional sheathing liquids present during the injection. Proposed and characterized here is the use of an immiscible inert oil phase to supplement the flow of sample in a hybrid microfluidic 3D-printed co-flow device. Co-flow generation is reported with sample and oil phases flowing in parallel, resulting in stable injection conditions for two different resin materials experimentally. A numerical model is presented that adequately predicts these flow-rate conditions. The co-flow generating devices reduce crystal clogging effects, have the potential to conserve protein crystal samples up to 95% and will allow degradation-free light-induced time-resolved SFX.

3D printing↗
DOE OSTI2025

Field Testing of PID-p Susceptible Bifacial PERC Modules: Impact of Light, Voltage and Module History ​

This work investigates the potential induced degradation-polarization (PID-p) of bifacial passivated emitter and rear contact (PERC) modules installed in the field at the Florida Solar Energy Center. 22 modules were stressed over 1 year under various voltage (-1500V, -3500, +1500V) and mounting configurations (close to ground, 2 meters from ground, close to roof). The positively stressed modules were anticipated to have experiences PID-p on their front side. However, no degradation was observed, as the light-induced recovery effect effectively counteracted the degradation. The negatively stressed modules experienced Pmax drops during 2 weeks before stabilizing at 5-6% loss. I-V and EL characteristics suggest a PID-p degradation on the rear side. Lower degradation rates are observed with lower voltage and when the mounting configuration allows more albedo light on the rear side to compensate for the degradation. PID-p is observed to stabilize at similar level for the voltage and mounting configuration tested with slightly lower Pmax in winter. EL imaging reveals that cells are not degrading at the same rate across a module. Some cells get darker and then brighter which corresponds to the silicon/passivation interface going through depletion and then inversion when enough positive charges are accumulated. After full light-recovery, the modules were tested again along with 22 brand-new ones to assess the impact of the module history. Results confirmed the trends observed in the first year with PID-p occurring at voltage as low as -600V and recovered modules degrading faster than brand-new ones.

14 SOLAR ENERGY↗
DOE OSTI2023

Trends in Light and Temperature Sensitivity Recommendations among Licensed Biotechnology Drug Products

Inherent structural and functional properties of biotechnology-derived therapeutic biologics make them susceptible to light- and temperature-induced degradation and consequently can influence their quality. Photosensitivity of therapeutic proteins continues to be examined, but the commonalities and trends of storage conditions and information about light and temperature sensitivity among currently licensed therapeutic proteins has not been previously surveyed. Using a comprehensive and relational database approach, we conducted a scientific survey of all licensed biotechnology-derived drug products with the goal of providing evidence-based information about recommended storage conditions of formulations sorted by light- and temperature-related attributes as described for each product at licensure. We report the prevalence of indications for light and temperature sensitivity in formulations categorized by their presentation type, number of doses, container type, dosage form and active molecule type. We also report the storage temperature range across formulations and diluents for reconstitution and dilution. Formulations with excipients that potentially facilitate light-induced and thermal degradation were also noted. The result of our analysis indicates that light and temperature sensitivity are prevalent across therapeutic protein formulations. However, when a formulation is reconstituted or diluted, both light and temperature sensitivity are less clear. In addition, light and temperature sensitivity are more well defined in liquid formulations than lyophilized powder formulations, and more well defined in products manufactured in autoinjectors, prefilled-syringes, and pens than products in vials. Overall, our report provides a data-driven summary of storage conditions among therapeutic protein formulations to support the development of future biologic drug products.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1986

Reliability of photovoltaic modules

In order to assess the reliability of photovoltaic modules, four categories of known array failure and degradation mechanisms are discussed, and target reliability allocations have been developed within each category based on the available technology and the life-cycle-cost requirements of future large-scale terrestrial applications. Cell-level failure mechanisms associated with open-circuiting or short-circuiting of individual solar cells generally arise from cell cracking or the fatigue of cell-to-cell interconnects. Power degradation mechanisms considered include gradual power loss in cells, light-induced effects, and module optical degradation. Module-level failure mechanisms and life-limiting wear-out mechanisms are also explored.

Ross, R. G., Jr.↗
DOE OSTI2022

Copper Outdiffusion from Copper-Plated Solar Cell Contacts during Damp Heat Exposure

Plated copper (Cu) contacts for silicon (Si) solar cells are an attractive alternative material to conventional screenprinted silver, but there are unresolved questions on the long-term integrity of plated contact structures. Here, in this work, we perform characterization on plated Cu contacts from encapsulated cells that were degraded during extended exposure to damp heat (DH) stress. First, using energy-dispersive X-ray spectroscopy, we find evidence of Cu outdiffusion upward through capping layers made of both tin and silver applied with light-induced plating, resulting in a layer of Cu on the outer contact surface. We hypothesize that if Cu is mobile in the module, it may eventually find some route by which to enter the Si cells where it can degrade performance. Subsequently, in several types of Cu-plated, DH-degraded cells, secondary ion mass spectrometry detects elevated levels of Cu at the Si surface and in the Si cell bulk, which suggests that Cu can indeed migrate from contacts into Si over the course of DH stress.

14 SOLAR ENERGY↗
NASA NTRS2000

Power Systems Evaluated for Solar Electric Propulsion Vehicles

Solar electric propulsion (SEP) mission architectures are applicable to a wide range NASA missions including the robotic exploration of the outer planets in the next decade and the human exploration of Mars within the next 2 decades. SEP enables architectures that are very mass efficient with reasonable power levels (1-MW class) aerobrake and cryogenic upper-stage transportation technologies are utilized. In this architecture, the efficient SEP stage transfers the payload from low Earth orbit (LEO) High Energy Elliptical Parking Orbit (HEEPO) within a period of 6 to 12 months. highthrust, cryogenic upper stage and payload then separate from the SEP vehicle for injection to the planetary target, allowing for fast heliocentric trip times. This mission architecture offers a potential reduction in mass to LEO in comparison to alternative all-chemical nuclear propulsion schemes. Mass reductions may allow launch vehicle downsizing enable missions that would have been grounded because of cost constraints. The preceding figure illustrates a conceptual SEP stage design for a human Mars mission. Researchers at the NASA Glenn Research Center at Lewis Field designed conceptual SEP vehicle, conceived the mission architecture to use this vehicle, and analyzed the vehicle s performance. This SEP stage has a dry mass of 35 metric tons (MT), 40 MT of xenon propellant, and a photovoltaic array that spans 110 m, providing power to a cluster of eight 100-kW Hall thrusters. The stage can transfer an 80-MT payload and upper stage to the desired HEEPO. Preliminary packaging studies show this space-station-class SEP vehicle meets the proposed "Magnum" launch vehicle and volume requirements with considerable margin. An SEP vehicle for outer planetary missions, such as the Europa Mapper Mission, would be dramatically smaller than human Mars mission SEP stage. In this mission architecture, the SEP power system with the payload to provide spacecraft power throughout the mission. Several photovoltaic array design concepts were considered for the SEP vehicle power system for the human mission to Mars. These include a space station derivative, a SCARLET (Solar Concentrator Arrays with Refractive Linear Element Technology) derivative, and a hybrid inflatable-deployable thin polymer membrane array with thin-film solar cells (as shown in the concept illustration). This concept is based on a design developed for the Next Generation Space Telescope Sun shield. The array is divided into 16 independent electrical sections with 500-V, negative-grounded solar cell strings. The power system employs a channelized, 500-Vdc power management and distribution (PMAD) architecture with lithium ion batteries for energy storage for vehicle and payload secondary loads (the high-power Hall thrusters do not operate in eclipse periods). The 500-V PMAD voltage permits "direct-drive" thruster operation, greatly reducing the power processing unit size, complexity, and power loss. Similar power system architecture, designs, and technology are assumed for the Europa Mapper Mission SEP vehicle. The primary exceptions are that the photovoltaic array is assumed to consist of two rectangular wings and that the power system rating is 15 kW in Earth orbit and 200 W at Europa. To size the SEP vehicle power system, a dedicated Fortran code was developed to predict detailed power system performance, mass, and thermal control requirements. This code also modeled all the relevant Earth orbit environments; that is, the particulate radiation, plasma, meteoroids and debris, ultraviolet radiation, contamination, and thermal conditions. Analysis results for the Human Mars Mission SEP vehicle show a power system mass of 9-MT and photovoltaic array area of 5800-square meters for the thin-membrane design concept with CuInS2 thin-film cells. Power processing unit input power for a thin-membrane array design with three-junction, amorphous SiGe solar cells is shown in the graph. Power falls off rapidly inhe first weeks of the mission because of light-induced (Staebler-Wronksi) solar cell losses. During the next 200 days, power decreases steadily as the SEP stage spirals through the proton belts and sustains the bulk of the mission radiation damage. Once the vehicle apogee is above approximately four Earth radii, little additional degradation is incurred. From 400 to 800 days, a 1100-km "parking" orbit is maintained to await the next payload transfer opportunity. This orbit is below the main proton belt, and thus, little radiation dose is accumulated during this time period. During the second LEO-to-HEEPO transfer, power degrades somewhat further, but power requirements are still met. In comparison, the Europa Mapper SEP vehicle power system had a mass of 150 kg and a thin membrane array area of 100 square meters.

Kerslake, Thomas W.↗
DOE OSTI2023

Photo-induced halide redistribution in 2D halide perovskite lateral heterostructures

An improved understanding of the degradation pathways under external stimuli is needed to address stability challenges in two-dimensional (2D) perovskite semiconductor materials. Here, in this study, in situ synchrotron nanoprobe X-ray fluorescence (nano-XRF) is used to investigate the evolution of halide redistribution within various 2D halide perovskite (n = 1–3) lateral heterostructures under ultraviolet (UV) exposure. Further, the results show that iodine (I) experiences a loss in all cases, with the rate of change following the perovskite dimensionality monotonically. In contrast, bromine (Br) is relatively more stable than I in n = 2 and 3 heterostructures, with no significant change in the total Br concentration but a visible amount of Br diffusion to the previously I-rich regime. Combining nano-XRF and X-ray absorption spectroscopy (XAS), we found a reduction of dimensionality in crystals with n > 1 after UV exposure, indicating significant structural reconfiguration beyond ion migration.

2D halide perovskites↗